Thinned Charge Coupled Devices with Flat Focal Planes for UV Imaging
A versatile post-fabrication process to produce thinned, flat, back-illuminated CCDs is being developed at Jet Propulsion Laboratory's Microdevices Laboratory.
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A versatile post-fabrication process to produce thinned, flat, back-illuminated CCDs is being developed at Jet Propulsion Laboratory's Microdevices Laboratory.
Switching and amplifying characteristics of a newly developed two-dimesnional InGaAs Active Pixel Imager Array are presented.
The progress of Jet Propulsion Laboratory in developing gallium arsenide junction field-effect transistors (GaAs JFETs) for application in infrared readout electronics operating below 10 Kelvin is discussed.
In this paper, we report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture, resonator pixel light coupling mechanism, and digital read out integrated circuits (DROICs).
We will report our recent efforts in achieving high performance in Antimonides type-II strained-layer superlattice based infrared photodectors using the barrier infrared detectors.
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