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DOE OSTI2021

Doping- and Strain-Dependent Electrolyte-Gate-Induced Perovskite to Brownmillerite Transformation in Epitaxial La 1– x Sr x CoO 3–δ Films

Much recent attention has focused on the voltage-driven reversible topotactic transformation between the ferromagnetic metallic perovskite (P) SrCoO 3-δ and oxygen-vacancy-ordered antiferromagnetic insulating brownmillerite (BM) SrCoO 2.5 . This is emerging as a paradigmatic example of the power of electrochemical gating (using, e.g., ionic liquids/gels), the wide modulation of electronic, magnetic, and optical properties generating clear application potential. SrCoO 3 films are challenging with respect to stability, however, and there has been little exploration of alternate compositions. Here, we present the first study of ion-gel-gating-induced P. BM transformations across almost the entire La 1-x SrxCoO 3 phase diagram (0 ≤ x ≤ 0.70), under both tensile and compressive epitaxial strain. Electronic transport, magnetometry, and operando synchrotron X-ray diffraction establish that voltage-induced P → BM transformations are possible at essentially all x, including x ≤ 0.50, where both P and BM phases are highly stable. Under small compressive strain, the transformation threshold voltage decreases from approximately +2.7 V at x = 0 to negligible at x = 0.70. Both larger compressive strain and tensile strain induce further threshold voltage lowering, particularly at low x. The P → BM threshold voltage is thus tunable, via both composition and strain. At x = 0.50, voltage-controlled ferromagnetism, transport, and optical transmittance are then demonstrated, achieving Curie temperature and resistivity modulations of similar to 220 K and at least 5 orders of magnitude, respectively, and enabling estimation of the voltage-dependent Co valence. The results are analyzed in the context of doping- and strain-dependent oxygen vacancy formation energies and diffusion coefficients, establishing that it is thermodynamic factors, not kinetics, that underpin the decrease in the threshold voltage with x, that is, with increasing formal Co valence. These findings substantially advance the practical and mechanistic understanding of this voltage-driven transformation, with fundamental and technological implications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2004

Field Effect Transistor Behavior in Electrospun Polyaniline/Polyethylene Oxide Demonstrated

Novel transistors and logic devices based on nanotechnology concepts are under intense development. The potential for ultra-low-power circuitry makes nanotechnology attractive for applications such as digital electronics and sensors. For NASA applications, nanotechnology offers tremendous opportunities for increased onboard data processing, and thus autonomous decisionmaking ability, and novel sensors that detect and respond to environmental stimuli with little oversight requirements. Polyaniline/polyethylene oxide (PANi/PEO) nanofibers are of interest because they have electrical conductivities that can be changed from insulating to metallic by varying the doping levels and conformations of the polymer chain. At the NASA Glenn Research Center, we have observed field effect transistor (FET) behavior in electrospun PANi/PEO nanofibers doped with camphorsulfonic acid. The nanofibers were deposited onto Au electrodes, which had been prepatterned onto oxidized silicon substrates. The preceding scanning electron image shows the device used in the transistor measurements. Saturation channel currents are observed at surprisingly low source/drain voltages (see the following graph). The hole mobility in the depletion regime is 1.4x10(exp -4)sq cm/V sec, whereas the one-dimensional charge density (at zero gate bias) is calculated to be approximately 1 hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx.10(exp -3) S/cm). Reducing or eliminating the PEO content in the fiber is expected to enhance device parameters. Electrospinning is thus proposed as a simple method of fabricating one-dimensional polymer FET's.

Mueller, Carl H.↗

NASA NTRS2012

NASA Tech Briefs, February 2012

This issue contains the following briefs: (1) Optical Comb from a Whispering Gallery Mode Resonator for Spectroscopy and Astronomy Instruments Calibration (2) Real-Time Flight Envelope Monitoring System (3) Nemesis Autonomous Test System (4) Mirror Metrology Using Nano-Probe Supports (5) Automated Lab-on-a-Chip Electrophoresis System (6) Techniques for Down-Sampling a Measured Surface Height Map for Model Validation (7) Multi-Component, Multi-Point Interferometric Rayleigh/Mie Doppler Velocimeter (8) Frequency to Voltage Converter Analog Front-End Prototype (9) Dust-Tolerant Intelligent Electrical Connection System (10) Gigabit Ethernet Asynchronous Clock Compensation FIFO (11) High-Speed, Multi-Channel Serial ADC LVDS Interface for Xilinx Virtex-5 FPGA (12) Glovebox for GeoLab Subsystem in HDU1-PEM (13) Modified Process Reduces Porosity when Soldering in Reduced Gravity Environments (14) Use of Functionalized Carbon Nanotubes for Covalent Attachment of Nanotubes to Silicon (15) Flexible Plug Repair for Shuttle Wing Leading Edge (16) Three Dimensionally Interlinked, Dense, Solid Form of Single-Walled CNT Ropes (17) Axel Robotic Platform for Crater and Extreme Terrain Exploration (18) Site Tamper and Material Plow Tool - STAMP (19) Magnetic Interface for Segmented Mirror Assembly (20) Transpiration-Cooled Spacecraft-Insulation-Repair Fasteners (21) Fluorescence-Based Sensor for Monitoring Activation of Lunar Dust (22) Aperture Ion Source (23) Virtual Ultrasound Guidance for Inexperienced Operators (24) Model-Based Fault Diagnosis: Performing Root Cause and Impact Analyses in Real Time (25) Interactive Schematic Integration Within the Propellant System Modeling Environment (26) Magnetic and Electric Field Polarizations of Oblique Magnetospheric Chorus Waves (27) Variable Sampling Mapping.

Source record↗

DOE OSTI2022

Multiple electron beam generation with different energies and comparable currents from a single cathode potential for high power traveling wave tubes (TWTs)

We present a technique for generating multiple electron beams with different energies and comparable currents from a single cathode stalk at a single potential using nested magnetically insulated coaxial diodes (MICDs). The application is for a multi-stream traveling wave tube. Particle-in-cell simulations are performed for an experimental parameter-based geometry where two thin-walled intense relativistic electron beams immersed in a strong uniform magnetic field propagate through a cylindrical vacuum channel. The analytically derived results are obtained by extending Fedosov’s solution for generating a hollow electron beam from an MICD on a cathode stalk in an infinite magnetic field. Two electron beams are generated and accelerated downstream assuming zero initial kinetic energy of the electrons from the cathodes. Results show both electron beam currents ranging from 66 to 2.8 kA with an energy difference ranging from 6% to 27% depending on voltages applied from 100 to 600 kV and the geometry of the two MICDs. An optimal geometry is a crucial factor in achieving the maximum energy difference between the electron beams for comparable currents. The analytical and numerical simulation results show good agreement. We are currently in the process of planning experiments using the electron beam accelerator (SINUS-6 at UNM) to validate the analytical and simulation results.

Islam, K. N. (ORCID:0000000214397710)↗

NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗

NASA NTRS2006

Silicon-Based Optical Modulator with Ferroelectric Layer

According to a proposal, a silicon dioxide layer in a high-speed, low-power, silicon- based electro-optical modulator would be replaced by a layer of lead zirconate titanate or other ferroelectric oxide material. The purpose of this modification is to enhance the power performance and functionality of the modulator. In its unmodified form, the particular silicon- based electro-optical modulator is of an advanced design that overcomes the speed limitation of prior silicon-based electro- optical modulators. Whereas modulation frequencies of such devices had been limited to about 20 MHz, this modulator can operate at modulation frequencies as high as 1 GHz. This modulator can be characterized as a silicon-waveguide-based metal oxide/semiconductor (MOS) capacitor phase shifter in which modulation of the index of refraction in silicon is obtained by exploiting the free-charge-carrier-plasma dispersion effect. As shown in the figure, the modulator includes an n-doped crystalline silicon slab (the silicon layer of a silicon- on-insulator wafer) and a p-doped polycrystalline silicon rib with a gate oxide layer (the aforementioned silicon dioxide layer) sandwiched between them. Under accumulation conditions, the majority charge carriers in the silicon waveguide modify the index of refraction so that a phase shift is induced in the optical mode propagating in the waveguide. The advantage of using an MOS capacitor phase shifter is that it is possible to achieve high modulation speed because there are no slow carrier-generation or -recombination processes involved in the accumulation operation. The main advantage of the proposed substitution of a ferroelectric oxide layer for the silicon dioxide layer would arise from the spontaneous polarization effect of the ferroelectric layer: This spontaneous polarization would maintain accumulation conditions in the absence of applied voltage. Consequently, once the device had been switched to a given optical state, it would remain in that state, even in the absence of applied voltage (in other words, even with power turned off). A secondary advantage is that because the ferroelectric layer would have an index of refraction larger than that of silicon dioxide, there could be some reduction of optical losses attributable to fabrication of the modulator

Sheldon, Douglas↗

DOE OSTI2025

Delineating the kinetic limitations of Mn 2+/3+ redox in LiMn x Fe 1−x PO 4 cathodes for lithium-ion batteries

LiMn x Fe 1−x PO 4 (LMFP) cathodes offer higher energy density than LiFePO 4 due to a higher operating voltage. However, the kinetic limitations of the Mn 2+/3+ redox couple in LMFP restrict its practically achievable capacity and hinder the ability to achieve high energy density. While the shortcomings of Mn 2+/3+ redox are recognized, its behavior and the factors that impact it remain to be fully understood. We present here an in-depth kinetics study of LMFP by utilizing novel techniques, such as chronoamperometry and galvanostatic electrochemical impedance spectroscopy. Compared to moderate-Mn LMFP (40–60% Mn), high-Mn LMFP (80% Mn) experiences reduced capacity, poor rate capability, and heightened impedance during Mn 2+/3+ redox. The oxidation of Mn 2+ to Mn 3+ becomes more resistive during charge due to the formation of Jahn–Teller active Mn 3+ and the increasing charge-transfer insulating behavior of Mn x Fe 1−x PO 4 . However, the impedance associated with Mn 3+ to Mn 2+ reduction remains constant during discharge in the entire region. The protracted Mn2+ oxidation in high-Mn LMFP results in excessive impedance compared to that in moderate-Mn LMFP, even at low C-rates and high cycling temperatures. Despite the promise of high energy density, the extreme kinetic limitations inherent to high-Mn LMFP present a barrier.

25 ENERGY STORAGE↗

NASA NTRS2024

AC and DC Fault Management for Megawatt Electrified Aircraft Electrical Powertrains - Task 2: Power Quality Filtering Using Nanocrystalline Soft Magnetic Inductor

The NASA RTAPS program on AC and DC Fault Management for Megawatt Electrified Power Train is a multi-year joint project with Pratt & Whitney (P&W), Collins Aerospace (CA), and RTX Technology Research Center (RTRC). This research program focuses on the high-voltage distribution issues that present a significant technological obstacle in the adoption of Electrified Aviation Propulsion (EAP) systems. One challenge to the adoption of high-voltage distribution systems with power electronic converters is the need for filter elements to limit the generation and propagation of noise, protect the cable systems from premature aging and prevent against excessive heating within subcomponents due to high-frequency induced currents. While increased distribution voltages aide in reducing the cable mass for a fixed power system, the associated mass with the filtering elements for power electronic converter can grow with increasing distribution voltages – thereby mitigating any benefit associated with increasing the distribution system voltage. To enable high-voltage distribution systems with high system specific power densities, new magnetic materials must be developed. Therefore, the second task of the NASA RTAPS program is associated with the design and application of advanced soft magnetic components for Megawatt class electric propulsion systems, specifically the motor drive system. This report covers the collaborative work between NASA Glenn Research Center (GRC), RTRC, P&W and CA in the development of three types of magnetic components over the span of the three-year program. These critical magnetic components are the DC side EMI filter, which limits the propagation of harmful electromagnetic noise to the rise of the distribution system, and the AC side damping with the dv/dt filter, which limits the fast rise time of the power electronic converter output voltage to limit the degradation on the cable/motor insulation systems. Each of these components are investigated from component level design and are optimized at the system level with a combined modelling and testing effort. In the final experimental evaluation of the NASA developed soft magnetic material with a dv/dt filter, a commercial-off-the-shelf (COTS) magnetic core and the GRC magnetic core are optimized and loaded at 320Arms to evaluate their difference in performance. After a run time of 30 minutes in a MW-class motor driver at RTRC, the NASA GRC cores were found to not only offer a lower temperature rise of nearly 25°𝐶, but also a reduction in measured core loss of 25% (12.75W to 9.5W).

Elecrified Aircraft Propulsion↗

NASA NTRS2005

n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

Wilt, David M.↗

DOE OSTI2022

Fabricating Graphene Oxide/h-BN Metal Insulator Semiconductor Diodes by Nanosecond Laser Irradiation

To employ graphene’s rapid conduction in 2D devices, a heterostructure with a broad bandgap dielectric that is free of traps is required. Within this paradigm, h-BN is a good candidate because of its graphene-like structure and ultrawide bandgap. We show how to make such a heterostructure by irradiating alternating layers of a-C and a-BN film with a nanosecond excimer laser, melting and zone-refining constituent layers in the process. With Raman spectroscopy and ToF-SIMS analyses, we demonstrate this localized zone-refining into phase-pure h-BN and rGO films with distinct Raman vibrational modes and SIMS profile flattening after laser irradiation. Furthermore, in comparing laser-irradiated rGO-Si MS and rGO/h-BN/Si MIS diodes, the MIS diodes exhibit an increased turn-on voltage (4.4 V) and low leakage current. The MIS diode I-V characteristics reveal direct tunneling conduction under low bias and Fowler-Nordheim tunneling in the high-voltage regime, turning the MIS diode ON with improved rectification and current flow. This study sheds light on the nonequilibrium approaches to engineering h-BN and graphene heterostructures for ultrathin field effect transistor device development.

2D materials↗

DOE OSTI2022

Tuning the Porous Structure in PMMA-Templated Mesoporous MoO 2 for Pseudocapacitive Li-Ion Electrodes

MoO 2 is an exciting candidate for next-generation energy storage. It can be used for fast-charging applications in nanoscale form, but its kinetic performance is often limited by insulating MoO 3 surface oxide layers. Here, we developed methods to produce polymer-templated porous MoO 2 powders where electrical conductivity was well-maintained throughout the structure, even in the presence of some surface oxidation. Porosity, pore size, and crystallite size were controlled by varying the amount and size of the colloidal templates and through calcination temperature. The electrochemical performance was correlated with nanoscale structure: samples with high porosity, medium pore sizes, and good crystallinity display optimal rate capabilities, with over 100 mAh g −1 delivered in 3 min and 93% capacity retention after 1000 cycles. Kinetic studies were performed on samples with the largest and smallest crystallite sizes to understand the charge storage mechanism. In the sample with the smallest crystallite size, 85% of the total stored charge was capacitive, compared to 60% for the largest crystallite size. Sloping voltage profiles in materials with smaller domain sizes further suggest suppression of intercalation-induced phase transitions. This work thus provides insights into the mechanisms of charge storage in nanoscale MoO 2 and design parameters for the production of fast charging materials.

25 ENERGY STORAGE↗

NASA NTRS1997

The Charging of Composites in the Space Environment

Deep dielectric charging and subsequent electrostatic discharge in composite materials used on spacecraft have become greater concerns since composite materials are being used more extensively as main structural components. Deep dielectric charging occurs when high energy particles penetrate and deposit themselves in the insulating material of spacecraft components. These deposited particles induce an electric field in the material, which causes the particles to move and thus changes the electric field. The electric field continues to change until a steady state is reached between the incoming particles from the space environment and the particles moving away due to the electric field. An electrostatic discharge occurs when the electric field is greater than the dielectric strength of the composite material. The goal of the current investigation is to investigate deep dielectric charging in composite materials and ascertain what modifications have to be made to the composite properties to alleviate any breakdown issues. A 1-D model was created. The space environment, which is calculated using the Environmental Workbench software, the composite material properties, and the electric field and voltage boundary conditions are input into the model. The output from the model is the charge density, electric field, and voltage distributions as functions of the depth into the material and time. Analysis using the model show that there should be no deep dielectric charging problem with conductive composites such as carbon fiber/epoxy. With insulating materials such as glass fiber/epoxy, Kevlar, and polymers, there is also no concern of deep dielectric charging problems with average day-to-day particle fluxes. However, problems can arise during geomagnetic substorms and solar particle events where particle flux levels increase by several orders of magnitude, and thus increase the electric field in the material by several orders of magnitude. Therefore, the second part of this investigation was an experimental attempt to measure the continuum electrical properties of a carbon fiber/epoxy composite, and to create a composite with tailorable conductivity without affecting its mechanical properties. The measurement of the conductivity and dielectric strength of carbon fiber/epoxy composites showed that these properties are surface layer dominated and difficult to measure. In the second experimental task, the conductivity of a glass fiber/epoxy composite was increased by 3 orders of magnitude, dielectric constant was increased approximately by a factor of 16, with minimal change to the mechanical properties, by adding conductive carbon black to the epoxy.

Czepiela, Steven A.↗

NASA NTRS2009

Evaluation of an Interferometric Sensor for In-Space Detection of Gas Leaks

Space mission planning often involves long-term storage of volatile liquids or high-pressure gases. These may include cryogenic fuels and oxidizers, high-pressure gases, and life-support-critical consumables. The risk associated with the storage of fluids and gases in space systems has long been an issue and the ability to retain these fluids is often tied to mission success. A leak in the storage or distribution system can cause many different problems, including a simple, but mission endangering, loss of inventory or, in severe cases, unbalanced thrust loads on a flight vehicle. Cryogenic propellants are especially difficult to store, especially over a long duration. The propellant can boil off and be lost through the insulating walls of the tank or simple thermal cycling of the fittings, valves, and propellant feed lines may unseat seals allowing the fluid to escape. Current NASA missions call for long-duration in-space storage of propellants, oxidizers, and life support supplies. Leaks of a scale detectable through a pressure drop in the storage tank are often catastrophic and have long been the focus of ground-based mitigation efforts where redundant systems are often employed. However, there is presently no technology available for detecting and monitoring low-level, but still mission-endangering, gas leaks in space. Standard in-space gas detection methods either have a very limited pressure range over which they operate effectively or are limited to certain gases. Mass spectrometer systems are able to perform the detection tasks, but their size, mass and use of high voltage, which could potentially lead to an arc that ignites a combustible propellent, severely limit their usefulness in a space system. In this paper, we present results from testing of the light-based interferometric gas monitoring and leak detection sensor shown in Fig. 1. The output of the sensor is an interference fringe pattern that is a function of the gas density, and commensurate index of refraction, in the sample region. Changes in the density of gas cause the interference fringes to move across a photodiode detector, providing a temporal history of the leak. The sensor is fiber coupled and constructed from solid optics, allowing for placement almost anywhere on the spacecraft. It is also advantageous in that it consumes very little power and does not introduce an ignition source. Data are presented demonstrating the capability of the sensor to measure density variations in different gas species. In addition, the transient response of the sensor in vacuum is demonstrated. These data extend and improve upon the results previously presented by the authors in Ref. [1].

Polzin, Kurt A.↗

DOE OSTI2023

Prediction of Breakdown in Air and Solid Dielectrics: A Complete Plasma Model from Discharge Initiation to Flashover (Final Technical Report)

A major challenge for most of the technologies of today, and the technologies of the future, is the compact and reliable design of electrical insulation systems for their electrical components. Although controlled low-temperature plasmas (LTPs) or non-thermal plasmas in air at atmospheric pressure are of interest for a wide range of technologies, the appearance of such discharges is considered highly undesirable in insulation systems because they are precursors of a breakdown or flashover, where complete insulation failure takes place. For non-thermal plasmas, often only one mechanism, or the transition from one discharge mechanism to another, has typically been studied to date. On the other hand, in the case of thermal plasma applications, the conditions following the occurrence of an electric arc or flashover have always been considered. Here, there is a big technical gap: there is no paper describing a complete plasma model simulating all discharge mechanisms and their transitions from discharge initiation to electrical arc and flashover. To address this gap, a complete plasma model for both thermal and non-thermal plasmas should be developed using a hydrodynamic approach. The project aimed to build the model. The work has the potential to address industrial applications and is of great importance to higher voltage systems.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS1994

P/N In(Al) GaAs Multijunction Laser Power Converters

Eight In(Al)GaAs P/N junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approx. 0.4 V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converter (LPC) chip. This is the first report of a multijunction LPC for the 1.3 to 1.5 microns wavelength range. This wavelength range is optimum for laser power transmission over low- loss single-mode silica optical fiber, and is also useful with high efficiency 1.315 microns iodine lasers in free-space power transmission. Advantages of multijunction LPC designs include the need for less circuitry for power reconditioning and the potential for lower I(exp 2)R power loss. As an example, these LPCs have a responsivity of approx.1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cM short-circuit current at approx. 0.4 V open-circuit voltage. One disadvantage is the large current would lead to a large 1(exp 2)R loss which would lower the fill factor so that 40 wattS/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approx. 3 V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the 1(exp 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPCs) were made in two different compositions of the ln(x)Al(y)Ga(l-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPCs had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 microns power conversion efficiencies were approx. 22%. One key advantage of multijunction LPCs is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.

Wojtczuk, Steven↗

DOE OSTI2023

Investigation of SF6 Alternatives in Spark Gap Switches for GWP Reduction

This primary purpose of this project was to evaluate alternative gas mixtures to sulfur hexafluoride (SF6) developed for high voltage power delivery applications for use in high voltage spark gap switches. These SF6 alternatives lower global warming potential emissions and enable improvements to the pressure-voltage design space. A combined experimental, computational, and theoretical study was used to quantify the impact of persistent breakdown products on the breakdown distribution of SF6-replacement gas mixtures. Viable SF6 replacements suitable for use in spark gap switches were studied to enable performance and agility improvements for next-generation pulsed power research relevant to national security missions. Experimental campaign included establishing parameters of switch gases as function of concentration. Various concentrations and pressures were tested for trends in breakdown voltage, repeatability, and durability, and breakdown constituents. A zero-dimensional plasma global model was used to simulate the plasma arc decay and recombination process in spark-gap switches relevant to the Z machine. Finally, a complete and consistent set of electron-neutral collision cross-sections for the novel insulating gas C4F7N is reported.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS1995

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗

NASA NTRS1999

The Conductor-Dielectric Junctions in a Low Density Plasma

A conductor-dielectric junction exposed to the space environment is a frequent spacecraft design feature. Due to spacecraft charging and/or solar array operation, the conductor can acquire a high potential with respect to the surrounding plasma. If this potential is positive the insulators adjacent to exposed conductors can collect current as if they were conductors themselves. This phenomenon, called snapover, results in a substantial increase in current collection, and may even result in a glow discharge if the potential is high enough. If a conductor has a negative potential, arcing can occur at the site of a junction. Both of these phenomena negatively affect spacecraft operation. To prevent negative consequences, the physical mechanisms of snapover and arc inception require investigation. In this paper, results are presented of an experimental and theoretical study of snapover, glow discharge, and arc phenomena for different materials immersed in argon or xenon plasmas. The effect of snapover is investigated for several metal-dielectric junctions: copper-teflon, copper-Kapton, copper-glass, aluminum-teflon, aluminum-Kapton, steel-teflon, anodized aluminum with pinholes, and copper-ceramics. I-V curves are measured and snapover inception voltages, essential parameters (increase in current and collection area due to secondary electrons), and glow discharge inception thresholds are determined. Optical spectra are obtained for glow discharges in both argon and xenon plasmas. These spectra provide information regarding atomic species entrapped in the glow region. Some spectral lines can be used to estimate plasma parameters in the discharge area. A video-camera and linear array were used to confirm that snapover inception is accompanied by very low intensity visible light emission. This result seems to be important for the estimate of the light pollution around spacecraft. Optical spectra (wavelengths 380-650 nm) of arcs are also obtained on a negatively biased chromic acid anodized aluminum plate immersed in low density argon and xenon plasmas. Analysis of these spectra confirms our earlier findings that aluminum atoms are ejected from the arc site. Moreover, it is found that chromium atoms are also quite abundant in the arc plasma. It is believed that the latter results contribute considerably to the understanding of processes of plasma contamination caused by arcing.

Vayner, Boris↗