Search NASA⌕ Search

SEARCH · Search NASA

Results for “Indium”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 397 records · Page 22

Defect chemistry and characterization of Hg sub 1x Cd sub x Te

Single crystal samples of undoped and doped Hg sub 1-x Cd sub x Te were annealed at varying temperatures and partial pressures of Hg. Hall effect and mobility measurements were carried out on these samples after quenching to room temperature. Based on the variation of the carrier concentration and the carrier mobility as a function of the partial pressure of Hg temperature, and dopant concentration, defect models were established for the doped and the undoped crystals. These models indicate that the native acceptor defects in both Hg0.8Cd0.2Te and Hg0.6Cd0.4Te doubly ionized and the native donor defects are negligible in concentration, implying that p to n conversion in these alloys occurs due only to residual donors. Incorporation mechanism of copper, indium, iodine, and phosphorus were investigated. A large concentration of indium is found to be paired with the native acceptor defects. Results on crystals doped with phosphorus indicate that phosphorus behaves amphoterically, acting as a donor on Hg lattice sites and as an acceptor intersitially on Te lattice sites. A majority of the phosphorus is found to be present as neutral species formed from the pairing reaction between phosphorus on Hg lattice sites and phosphorus in interstitial sites. Equilibrium constants for the intrinsic excitation reaction, as well as for the incorporation of the different dopants and the native acceptor defects were established.

Vydyanath, H. R.↗

Singlet oxygen generator for a solar powered chemically pumped iodine laser

The potential of solid phase endoperoxides as a means to produce single-delta oxygen in the gas phase in concentrations useful to chemical oxygen-iodine lasers was investigated. The 1,4 - endoperoxide of ethyl 3- (4-methyl - 1-naphthyl) propanoate was deposited over an indium-oxide layer on a glass plate. Single-delta oxygen was released from the endoperoxide upon heating the organic film by means of an electrical discharge through the conductive indium oxide coating. The evolution of singlet-delta oxygen was determined by measuring the dimol emission signal at 634 nm. Comparison of the measured signal with an analytic model leads to two main conclusions: virtually all the oxygen being evolved is in the singlet-delta state and in the gas phase, and there is no significant quenching other than energy pooling on the time scale of the experiment (approximately 10 msec). The use of solid phase endoperoxide as a singlet-delta oxygen generator for an oxygen-iodine laser appears promising.

Busch, G. E.↗

Effect of barrier height on friction behavior of the semiconductors silicon and gallium arsenide in contact with pure metals

Friction experiments were conducted for the semiconductors silicon and gallium arsenide in contact with pure metals. Polycrystalline titanium, tantalum, nickel, palladium, and platinum were made to contact a single crystal silicon (111) surface. Indium, nickel, copper, and silver were made to contact a single crystal gallium arsenide (100) surface. Sliding was conducted both in room air and in a vacuum of 10 to the minus 9th power torr. The friction of semiconductors in contact with metals depended on a Schottky barrier height formed at the metal semiconductor interface. Metals with a higher barrier height on semiconductors gave lower friction. The effect of the barrier height on friction behavior for argon sputtered cleaned surfaces in vacuum was more specific than that for the surfaces containing films in room air. With a silicon surface sliding on titanium, many silicon particles back transferred. In contrast, a large quantity of indium transferred to the gallium arsenide surface.

Mishina, H.↗

Modelling directional solidification

An improved understanding of the phenomena of importance to directional solidification is attempted to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis is now on experimentally determining the influence of convection and freezing rate fluctuations on compositional homogeneity and crystalline perfection. A correlation is sought between heater temperature profiles, buoyancy-driven convection, and doping inhomogeneities using naphthalene doped with anthracene. The influence of spin-up/spin-down is determined on compositional homogeneity and microstructure of indium gallium antimonide. The effect is determined of imposed melting - freezing cycles on indium gallium antimonide. The mechanism behind the increase of grain size caused by using spin-up/spin-down in directional solidification of mercury cadimum telluride is sought.

Wilcox, William R.↗

InP based solar cells for space application: Reduction of external losses

Although InP-based solar cells have considerable potential for space applications, it is necessary to improve efficiencies to around the level of GaAs or Si cells before their excellent radiation resistance can be regarded as a dominant advantage. The authors concentrate on indium-tin-oxide/InP cells, presenting data relating to reduction of the contact resistance of the rear surface metallization, reduction of reflectance losses by choosing indium-tin-oxide deposition conditions to give specific optical properties, and reduction of losses associated with the grid. Simultaneous optimization of all of these has led to improved values of Jsc. For devices of approximately 1 cm2 in area, the largest Jsc achieved to date is 28.1 mA/aq cm (AM1.5, SERI/NASA direct normal spectrum, 25 C, total area, 100 mW/sq cm). For this particular cell, the equivalent AM0 value of Jsc was 34.6 mA/sq cm, which appears to be the largest reported for any InP-based cell.

Wu, X.↗

Conceptual design of a lunar base solar power plant lunar base systems study task 3.3

The best available concepts for a 100 kW Solar Lunar Power Plant based on static and dynamic conversion concepts have been examined. The two concepts which emerged for direct comparison yielded a difference in delivered mass of 35 MT, the mass equivalent of 1.4 lander payloads, in favor of the static concept. The technologies considered for the various elements are either state-of-the-art or near-term. Two photovoltaic cell concepts should receive high priority for development: i.e., amorphous silicon and indium phosphide cells. The amorphous silicon, because it can be made so light weight and rugged; and the indium phosphide, because it shows very high efficiency potential and is reportedly not degraded by radiation. Also the amorphous silicon cells may be mounted on flexible backing that may roll up much like a carpet for compact storage, delivery, and ease of deployment at the base. The fuel cell and electrolysis cell technology is quite well along for lunar base applications, and because both the Shuttle and the forthcoming Space Station incorporate these devices, the status quo will be maintained. Early development of emerging improvements should be implemented so that essential life verification test programs may commence.

Source record↗

How successful were the lunar sampling tools: Implications for sampling Mars

Like the Mars Sample Return endeavor, the Apollo lunar-sample program began with definition of strategy for sample collection and of scientific requirements for sampling hardware design. Several lessons can be illustrated by specific tools. The evolution of drive tubes from narrow 2 cm diameter, thick-walled tubes (used on Apollo 11, 12 and 14) to 4 cm diameter, thin-walled tubes used on Apollo 15, 16, and 17) as an example of the improvements made possible during multiple missions. The original Apollo 11 drive tube was designed to work in fluffy soil; thus, only 50 percent of the relatively dense lunar soil was recovered, and the core was distorted. The final configuration resulted in nearly 100 pct recovery with little distortion. The surface samplers (Contact Soil Sampling Devices) were designed to collect the upper 100 micrometer or the upper 1 mm of soil. It was over 2 years after the mission before these particularly specific samplers were opened because interest in them waned. Both core tubes and surface samplers were difficult to open in the laboratory. The Apollo Lunar Sample Return Containers (ALSRCs) were constructed with one indium and 2 Viton seals. They were closed on the lunar surface. Interior container pressures measured upon return to the laboratory indicate that these seals were not reliable in the lunar environment. Also, choice of indium as a sealing material interfered with siderophile analyses of samples.

Allton, J. H.↗

Active spacecraft potential control: An ion emitter experiment

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Riedler, W.↗

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗

Modelling directional solidification

The long range goal is to develop an improved understanding of phenomena of importance to directional solidification, to enable explanation and prediction of differences in behavior between solidification on Earth and in space. Emphasis during the period of this grant was on experimentally determining the influence of convection and freezing rate fluctuations on compositional homogeneity and crystalline perfection in the vertical Bridgman-Stockbarger technique. Heater temperature profiles, buoyancy-driven convection, and doping inhomogeneties were correlated using naphthalene doped with azulene. In addition the influence of spin-up/spin-down on compositional homogeneity and microstructure of indium gallium antimonide and the effect of imposed melting-freezing cycles on indium gallium antimonide are discussed.

Wilcox, William R.↗

Deformation and fracture of thin sheet aluminum-lithium alloys: The effect of cryogenic temperatures

The objective is to characterize the fracture behavior and to define the fracture mechanisms for new Al-Li-Cu alloys, with emphasis on the role of indium additions and cryogenic temperatures. Three alloys were investigated in rolled product form: 2090 baseline and 2090 + indium produced by Reynolds Metals, and commercial AA 2090-T81 produced by Alcoa. The experimental 2090 + In alloy exhibited increases in hardness and ultimate strength, but no change in tensile yield strength, compared to the baseline 2090 composition in the unstretched T6 condition. The reason for this behavior is not understood. Based on hardness and preliminary Kahn Tear fracture experiments, a nominally peak-aged condition was employed for detailed fracture studies. Crack initiation and growth fracture toughness were examined as a function of stress state and microstructure using J(delta a) methods applied to precracked compact tension specimens in the LT orientation. To date, J(delta a) experiments have been limited to 23 C. Alcoa 2090-T81 exhibited the highest toughness regardless of stress state. Fracture was accompanied by extensive delamination associated with high angle grain boundaries normal to the fatigue precrack surface and progressed microscopically by a transgranular shear mechanism. In contrast the two peak-aged Reynolds alloys had lower toughness and fracture was intersubgranular without substantial delamination. The influences of cryogenic temperature, microstructure, boundary precipitate structure, and deformation mode in governing the competing fracture mechanisms will be determined in future experiments. Results contribute to the development of predictive micromechanical models for fracture modes in Al-Li alloys, and to fracture resistant materials.

Wagner, John A.↗

Photovoltaic options for solar electric propulsion

This paper discusses both state-of-the-art and advanced development cell and array technology. Present technology includes rigid, roll-out, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is discussed based on both DOD efforts and NASA work. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency thin radiation resistant cells is examined. This includes gallium arsenide/germanium, indium phosphide, and thin film devices such as copper indium disclenide.

Stella, Paul M.↗

Photovoltaic options for solar electric propulsion

During the past decade, a number of advances have occurred in solar cell and array technology. These advances have lead to performance improvement for both conventional space arrays and for advanced technology arrays. Performance enhancements have occurred in power density, specific power, and environmental capability. Both state-of-the-art and advanced development cells and array technology are discussed. Present technology will include rigid, rollout, and foldout flexible substrate designs, with silicon and GaAs solar cells. The use of concentrator array systems is also discussed based on both DOD and NASA efforts. The benefits of advanced lightweight array technology, for both near term and far term utilization, and of advanced high efficiency, thin, radiation resistant cells is examined. This includes gallium arsenide on germaniun substrates, indium phosphide, and thin film devices such as copper indium diselenide.

Stella, Paul M.↗

Effect of metallic coatings on the thermal contact conductance of turned surfaces

An experimental investigation was conducted to determine the degree to which the thermal contact conductance at the interface of contacting Aluminum 6061 T6 surfaces could be enhanced through the use of vapor-deposited metallic coatings. Three different coating materials (lead, tin, and indium) were evaluated using four different thicknesses for each coating material. The results verified the existence of an optimum coating thickness, shown to be in the range of 2.0 to 3.0 microns for indium, 1.5 to 2.5 microns for lead, and 0.2 to 0.5 microns for tin. The enhancement factors for thermal contact conductance were found to be on the order of 700, 400, and 50 percent, respectively. Based upon the experimental data, the hardness of the coating materials appears to be the most significant parameter in ranking the substrate and coating material combinations; however, additional experimental data are needed to substantiate this hypothesis. Finally, it was apparent that the thermal contact conductance enhancement effect was greatest at low contact pressures and decreased significantly with increases in the contact pressure.

Kang, T. K.↗

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.

Tatsumi, Masami↗

Liquid metal drop ejection

The aim of this project was to demonstrate the possibility of ejecting liquid metals using drop on demand printing technology. The plan was to make transducers for operation in the 100 MHz frequency range and to use these transducers to demonstrate the ability to eject drops of liquid metals such as gallium. Two transducers were made by indium bonding piezoelectric lithium niobate to quartz buffer rods. The lithium niobate plates were thinned by mechanical polishing to a thickness of 37 microns for operation at 100 MHz. Hemispherical lenses were polished in the opposite ends of the buffer rods. The lenses, which focus the sound waves in the liquid metal, had an F-number equals 1. A mechanical housing was made to hold the transducers and to allow precise control over the liquid level above the lens. We started by demonstrating the ability to eject drops of water on demand. The drops of water had a diameter of 15 microns which corresponds to the wavelength of the sound wave in the water. A videotape of this ejection was made. We then used a mixture of Gallium and Indium (used to lower the melting temperature of the Gallium) to demonstrate the ejection of liquid metal drops. This proved to be difficult because of the oxide skin which forms on the surface of the liquid. In some instances, we were able to eject metal drops, however, this was not consistent and reproducible. An experiment was set up at NASA-Lewis to stabilize the process of drop on demand liquid metal ejection. The object was to place the transducer and liquid metal in a vacuum station so that no oxide would form on the surface. We were successful in demonstrating that liquid metals could be ejected on demand and that this technology could be used for making sheet metal in space.

Khuri-Yakub, B. T.↗

Modelling of the MEA float zone using accelerometer data

During a floating zone experiment involving the growth of indium on a recent orbiter mission, (STS 32) oscillation of the zone shapes were observed to occur in response to the background acceleration. An understanding of the nature of the response of the zone shape to forced (g-jitter) oscillations and predictions of its impact on future experiments is of great interest not only to the PI's but to other commercial and academic investigators who plan to fly similar experiments in the orbiter and on space station. Motivated by this, a 15 month study was undertaken to analyze the nature of the g-sensitivity of the STS 32 floating zone crystal growth experiment. Numerical models were used to describe the time-dependent free surface motion of the zone as it responds to the spacecraft residual acceleration. Relevant experimental data concerning the acceleration environment was obtained from the Honeywell in Space Accelerometer (HISA) investigators through MSFC's ACAP program and processed and analyzed. For the indium floating zone experiment, a series of calculations were made using time-dependent axial accelerations g(t). The form of g(t) included simple sinusoidal disturbances as well as actual data (subject to appropriate filtering) measured on the STS 32 mission. Focus was on the calculation of the response of the free surface of the zone as well as the internal flows and internal heat transfer. The influence of solidification on the response of the zone shape was also examined but found to be negligible.

Alexander, J. Iwan D.↗

InGaAs PV Device Development for TPV Power Systems

Indium gallium arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2 percent (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8 percent efficiency under a 1500 K blackbody with a projected efficiency of 29.3 percent. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8 percent and 6 percent respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗