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Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

An increased extraction energy booster complex for the Jefferson Lab electron ion collider

The proposed Jefferson Lab Electron Ion Collider (JLE-IC) envisions an ion complex composed of an ion linac, two booster synchrotrons and a collider ring. The evolv-ing design of the JLEIC booster required an increase in the extraction energy of the booster from 8 to 12.1 GeV kinetic energy, necessitating two machines instead of one. The decision was also made to switch to warm magnets, thus increasing the total radius of the 8 GeV booster. With the second booster being the same size as the collider rings. In this work we present the new designs for JLE-IC?s Low Energy Booster (LEB) and High Energy Boost-er (HEB).

Nissen, Edith↗
DOE OSTI2019

Magnetocaloric refrigerator

The invention is for an apparatus and method for a refrigerator and a heat pump based on the magnetocaloric effect (MCE) offering a simpler, lighter, robust, more compact, environmentally compatible, and energy efficient alternative to traditional vapor-compression devices. The subject magnetocaloric apparatus alternately exposes a suitable magnetocaloric material to strong and weak magnetic field while switching heat to and from the material by a mechanical commutator comprising heat pipe elements. The invention may be practiced with multiple magnetocaloric stages to attain large differences in temperature. Key applications include thermal management of electronics, as well as industrial and home refrigeration, heating, and air conditioning. The invention offers a simpler, lighter, compact, and robust apparatus compared to magnetocaloric devices of prior art. Furthermore, the invention may be run in reverse as a thermodynamic engine, receiving low-level heat and producing mechanical energy.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

CHARGED POINT DEFECTS AND DEFECT COMPLEXES IN PHOSPHORENE AND STRUCTURAL PREDICTION OF TAU-11, A DENSITY FUNCTIONAL THEORY APPROACH

With the advent of powerful computers, first principle calculations have become a robust and reliable tool to complement experiments in the study of materials. First principle calculations such as density functional theory can be used to guide experiments to save time and effort when it comes to new and advanced materials discovery. Study of charge defects in materials and crystal structure prediction are such areas in which density functional theory calculations facilitate the prediction of defect formation energy, charge transition levels and elemental site occupations. Experimentally, studying charge defects requires inferring results from various techniques. Likewise, determining site occupancies for similar elements using experimental techniques is challenging and sometimes impossible. In this work, we study the charged intrinsic and extrinsic defects and defect complexes in phosphorene and determine the site occupancies of Al, Fe and Si in the τ11 phase using density functional theory. In the defect work, we calculate the defect formation energy, charge transition level, binding energies and Stokes shift for vacancy, dopant substitution and dopant-vacancy defect complexes in phosphorene. We found that vacancy defect in phosphorene becomes negatively charged in n-type doping and may passivate the dopants and reduce carrier concentration and mobility. For non-metal dopants in phosphorene, we predict that O, S and Si prefer to form dopant-vacancy complexes removing the vacancy defect states from the band gap. Mn dopant-vacancy defect complex exhibits possibility of switching between two magnetic spin states. Lastly, using density functional theory, we complement the results from neutron powder diffraction to determine the site occupancies of Al and Si in τ11 phase which was used to determine the alloying element to develop a high temperature and low density alloy.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Switchable wavelength-selective and diffuse metamaterial absorber/emitter with a phase transition spacer layer

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO{sub 2}). Perfect absorption peak exists around the wavelength of 5 μm when the excitation of magnetic resonance is supported with the insulating VO{sub 2} spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO{sub 2} that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the design of switchable metamaterials for active control in energy and sensing applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Shuttle-promoted nano-mechanical current switch

We investigate electron shuttling in three-terminal nanoelectromechanical device built on a movable metallic rod oscillating between two drains. The device shows a double-well shaped electromechanical potential tunable by a source-drain bias voltage. Four stationary regimes controllable by the bias are found for this device: (i) single stable fixed point, (ii) two stable fixed points, (iii) two limit cycles, and (iv) single limit cycle. In the presence of perpendicular magnetic field, the Lorentz force makes possible switching from one electromechanical state to another. The mechanism of tunable transitions between various stable regimes based on the interplay between voltage controlled electromechanical instability and magnetically controlled switching is suggested. The switching phenomenon is implemented for achieving both a reliable active current switch and sensoring of small variations of magnetic field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Analysis of single-event upset of magnetic tunnel junction used in spintronic circuits caused by radiation-induced current

This paper describes the possibility of a switching upset of a magnetic tunnel junction (MTJ) caused by a terrestrial radiation-induced single-event-upset (SEU) current in spintronic integrated circuits. The current waveforms were simulated by using a 3-D device simulator in a basic circuit including MTJs designed using 90-nm CMOS parameters and design rules. The waveforms have a 400 -μA peak and a 200-ps elapsed time when neutron particles with a linear energy transfer value of 14 MeV cm{sup 2}/mg enter the silicon surface. The authors also found that the SEU current may cause soft errors with a probability of more than 10{sup −12} per event, which was obtained by approximate solution of the ordinary differential equation of switching probability when the intrinsic critical current (I{sub C0}) became less than 30 μA.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Bottom‐Up Synthesis of Metallic CoNi Nanoplatelets with Magnetic Vortex‐Like Spin Configurations

Magnetic nanoplatelets hold significant potential for various technical applications due to their ability to switch between a fully magnetized state with high magnetization and a vortex‐like configuration that eliminates stray fields in the absence of an external field. This study presents the synthesis of uniform CoNi nanoplatelets through the topotactic reduction of metal hydroxides using hydrogen plasma. The reduction process is analyzed via magnetometry, leveraging the transition from paramagnetic hydroxide to ferromagnetic metal. Lorentz transmission electron microscopy and scanning transmission X‐ray microscopy confirm the presence of magnetic vortex‐like structures in isolated Co 0.85 Ni 0.15 nanoplatelets at ambient temperature. Additionally, micromagnetic simulations are conducted to further explore the magnetic properties of the nanoplatelets, revealing the formation of magnetic vortex remanent states at diameters between 200 nm and 1 μm and a thickness of around 12 nm. Notably, structural defects and thickness variations do not directly destabilize the magnetic vortex configurations.

Kräenbring, Mena‐Alexander [Faculty of Physics and↗
DOE OSTI2020

Cost Effective 6.5% Silicon Steel Laminate for Electric Machines

Iowa State University teamed with United Technologies Research Center and the University of Delaware and demonstrated a high switching frequency non-rare earth permanent magnet motor. A prototype motor with 400 Hz switching frequency, dummy MnBi permanent magnet with 8 MGOe energy density, and 6.5%Si steel as the laminate materials was designed, built, and tested. The performance of the prototype met the expectations showing a higher frequency motor enabled by 6.5%Si steel is a viable approach to meet DOE 2022 cost and performance targets for electric vehicle drive. Adoption of 6.5%Si steel will result in 3% improvement in energy conversion efficiency of the soft magnetic materials. In addition, the ability to use non-rare earth magnet for high power density application effectively mitigate the risk of EV traction motor from the rising rare earth price.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Electrical Switching and Imaging of Antiferromagnetic Spins in Perovskite Epitaxial Thin Films

Electrical control of antiferromagnets is essential for the field of antiferromagnetic spintronics that promises ultrafast speed and terahertz dynamics. However, the large family of complex oxide antiferromagnets such as perovskites have been largely unexplored. Here, we demonstrate electrical switching and detection of Néel vector in LaFeO 3 epitaxial thin films with an epitaxy-enabled biaxial anisotropy, of which the switching behavior is understood by comparing to magnetic field controlled spin Hall magnetoresistance measurements. The electrical switching is corroborated by imaging of antiferromagnetic domains using X-ray Magnetic Linear Dichroism Photoemission Electron Microscopy. Electrical switching of 3-nm and 10-nm LaFeO 3 films was achieved over a wide temperature range of 25 to 300 K. This work offers an attractive platform for exploration of antiferromagnetic spintronics and other emerging phenomena such as potential insulating altermagnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Raman spectra and magnetization of all-ferromagnetic superlattices grown on (110) oriented SrTiO{sub 3}

Superlattices consist of two ferromagnets La{sub 0.7}Sr{sub 0.3}MnO{sub 3} (LSMO) and SrRuO{sub 3} (SRO) were grown in (110)-orientation on SrTiO{sub 3} (STO) substrates. The x-ray diffraction and Raman spectra of these superlattices show the presence of in-plane compressive strain and orthorhombic structure of less than 4 u.c. thick LSMO spacer, respectively. Magnetic measurements reveal several features including reduced magnetization, enhanced coercivity, antiferromagnetic coupling, and switching from antiferromagnetic to ferromagnetic coupling with magnetic field orientations. These magnetic properties are explained by the observed orthorhombic structure of spacer LSMO in Raman scattering which occurs due to the modification in the stereochemistry of Mn at the interfaces of SRO and LSMO.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Spin power and efficiency in an Aharnov-Bohm ring with an embedded magnetic impurity quantum dot

Spin thermoelectric effects in an Aharnov-Bohm ring with a magnetic impurity quantum dot (QD) are theoretically investigated by using the nonequilibrium Green's function method. It is found that due to the exchange coupling between the impurity and the electrons in QD, spin output power, and efficiency can be significant and be further modulated by the gate voltage. The spin thermoelectric effect can be modulated effectively by adjusting the Rashba spin-orbit interaction (RSOI) and the magnetic flux. The spin power and efficiency show zigzag oscillations, and thus spin thermoelectric effect can be switched by adjusting the magnetic flux phase factor and RSOI ones. In addition, the spin efficiency can be significantly enhanced by the coexistence of the RSOI and the magnetic flux, and the maximal value of normalized spin efficiency η{sub max}/η{sub C} = 0.35 is obtained. Our results show that such a QD ring device may be used as a manipulative spin thermoelectric generator.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Role of element-specific damping in ultrafast, helicity-independent, all-optical switching dynamics in amorphous (Gd,Tb)Co thin films

Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (a-) rare earth-transition metal (a-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic a-Gd 22-x Tb x Co 78 thin films, from x=0 to 18, and elucidate the role of Gd in HI-AOS in a-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower damping on the RE sublattice arising from the small spin-orbit coupling of Gd (with L=0) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing a-Gd 10 Tb 12 Co 78 leads to slower dynamics which we argue is due to an increase in damping. These simulations strongly indicate that accounting for element-specific damping is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element-specific damping of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

First-principles insight into all-optical spin switching in the half-metallic Heusler ferrimagnet Mn 2 RuGa

All-optical spin switching (AOS) represents a new frontier in magnetic storage technology—spin manipulation without a magnetic field—but its underlying working principle is not well understood. Many AOS ferrimagnets such as GdFeCo are amorphous and renders the high-level first-principles study unfeasible. The crystalline half-metallic Heusler Mn 2 RuGa presents an opportunity. Here we carry out hitherto the comprehensive density functional investigation into the material properties of Mn 2 RuGa, and introduce two concepts—the spin anchor site and the optical active site—as two pillars for AOS in ferrimagnets. In Mn 2 RuGa, Mn(4a) serves as the spin anchor site, whose band is below the Fermi level and has a strong spin moment, while Mn(4c) is the optical active site whose band crosses the Fermi level. Our magneto-optical Kerr spectrum and band structure calculation jointly reveal that the delicate competition between the Ru-4d and Ga-4p states is responsible for the creation of these two sites. Furthermore these two sites found here not only present a unified picture for both Mn 2 RuGa and GdFeCo, but also open the door for future applications. Specifically, we propose a Mn 2 Ru x Ga-based magnetic tunnel junction where a single laser pulse can control magnetoresistance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

A Unified Wireless Charger, On-Board Charger, and Auxiliary Power Module for Electric Vehicle Charging Systems

This paper proposes a unified electric vehicle (EV) charging architecture that integrates wireless power transfer (WPT), an on-board charger (OBC), and an auxiliary power module (APM) within a single architecture. By sharing a multi-functional magnetic structure and active switch bridges, the proposed topology eliminates additional transformers and converter stages, reducing hardware complexity and improving power density. A multipurpose magnetic design achieves magnetic decoupling among the WPT, OBC, and APM functions while maintaining the required coupling for each mode. Through electrical reconfiguration, the WPT operates as an LCC-S converter, whereas the OBC and APM operate as dual-active-bridge (DAB) converters. The system supports multiple operating modes, including simultaneous high-voltage and lowvoltage battery charging. Finite-element and circuit simulations verify the magnetic characteristics and system operation, demonstrating the feasibility of the proposed unified architecture for EV charging applications.

Jo, Cheolhui [ORNL] (ORCID:0000000322692434)↗
DOE OSTI2016

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La 0.7 Ca 0.3 MnO 3 /PrBa 2 Cu 3 O 7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Carrier-dependent magnetic anisotropy of Gd-adsorbed graphene

Using first-principles calculation based on density functional theory, we study the magnetic anisotropy of Gd-adsorbed graphene and its dependence on carrier accumulation. We show that carrier accumulation not only impacts the magnitude of magnetic anisotropy but also switches its sign. Hole accumulation enhances the perpendicular anisotropy up to ∼16 meV per Gd atom, while electron accumulation switches the anisotropy from perpendicular to in-plane direction. Moreover, we find that the first order perturbation of spin-orbit coupling interaction induces a pseudo-gap at Γ for the perpendicular magnetization, which leads to the the anomalous magnetic anisotropy for the neutral composite. Our findings pave the way for magneto-electric materials based on rare-earth-decorated graphene for voltage-controlled spintronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗