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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Azimuth correlator for real-time synthetic aperture radar image processing

An azimuth correlator architecture is defined wherein a number of serial range-line buffer memories are cascaded such that the output stages of all buffer memories together form a complete and unique range bin in the azimuthal dimension at any given time. A range bin is automatically read out of the last stages of the registers in parallel on a range line sample-by-sample basis for subsequent range migration correction and correlation. Range migration correction is performed on the range bins by effectively varying the length of a delay register at the output of each range-line buffer memory. The corrected range bin output from the delay registers is then correlated with a Doppler reference function to form an image element on a real-time basis.

Arens, W. E.↗
NASA NTRS1992

The changing nature of spacecraft operations: From the Vikings of the 1970's to the great observatories of the 1990's and beyond

Four trends in spacecraft flight operations are discussed which will reduce overall program costs. These trends are the use of high-speed, highly reliable data communications systems for distributing operations functions to more convenient and cost-effective sites; the improved capability for remote operation of sensors; a continued rapid increase in memory and processing speed of flight qualified computer chips; and increasingly capable ground-based hardware and software systems, notably those augmented by artificial intelligence functions. Changes reflected by these trends are reviewed starting from the NASA Viking missions of the early 70s, when mission control was conducted at one location using expensive and cumbersome mainframe computers and communications equipment. In the 1980s, powerful desktop computers and modems enabled the Magellan project team to operate the spacecraft remotely. In the 1990s, the Hubble Space Telescope project uses multiple color screens and automated sequencing software on small computers. Given a projection of current capabilities, future control centers will be even more cost-effective.

Ledbetter, Kenneth W.↗
NASA NTRS2008

Disabling CNT Electronic Devices by Use of Electron Beams

Bombardment with tightly focused electron beams has been suggested as a means of electrically disabling selected individual carbon-nanotubes (CNTs) in electronic devices. Evidence in support of the suggestion was obtained in an experiment in which a CNT field-effect transistor was disabled (see figure) by focusing a 1-keV electron beam on a CNT that served as the active channel of a field-effect transistor (FET). Such bombardment could be useful in the manufacture of nonvolatile-memory circuits containing CNT FETs. Ultimately, in order to obtain the best electronic performances in CNT FETs and other electronic devices, it will be necessary to fabricate the devices such that each one contains only a single CNT as an active element. At present, this is difficult because there is no way to grow a single CNT at a specific location and with a specific orientation. Instead, the common practice is to build CNTs into electronic devices by relying on spatial distribution to bridge contacts. This practice results in some devices containing no CNTs and some devices containing more than one CNT. Thus, CNT FETs have statistically distributed electronic characteristics (including switching voltages, gains, and mixtures of metallic and semiconducting CNTs). According to the suggestion, by using a 1-keV electron beam (e.g., a beam from a scanning electron microscope), a particular nanotube could be rendered electrically dysfunctional. This procedure could be repeated as many times as necessary on different CNTs in a device until all of the excess CNTs in the device had been disabled, leaving only one CNT as an active element (e.g., as FET channel). The physical mechanism through which a CNT becomes electrically disabled is not yet understood. On one hand, data in the literature show that electron kinetic energy >86 keV is needed to cause displacement damage in a CNT. On the other hand, inasmuch as a 1-keV beam focused on a small spot (typically a few tens of nanometers wide) deposits a significant amount of energy in a small volume, the energy density may suffice to thermally induce structural and/or electronic changes that disable the CNT. Research may be warranted to investigate this effect in detail.

Petkov, Mihail↗
NASA NTRS2008

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. This investigation extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional improvement in the work output of the material, which has a stress-free Af of 113 oC, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted in the aforementioned alloy at various stress levels from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 oC. The data indicated that the amount of applied stress influenced the transformation strain available in the system, as would be expected. However, the maximum temperature reached during the thermal excursion also plays a role in determining the transformation strain, with the maximum transformation strain being developed by thermal cycling to 290 oC. In situ, neutron diffraction showed that the differences in transformation strain were related to differences in martensite texture within the microstructure when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗
NASA NTRS2011

Effect of Upper-Cycle Temperature on the Load-Biased, Strain-Temperature Response of NiTi

Over the past decade, interest in shape memory alloy based actuators has increased as the primary benefits of these solid-state devices have become more apparent. However, much is still unknown about the characteristic behavior of these materials when used in actuator applications. Recently we have shown that the maximum temperature reached during thermal cycling under isobaric conditions could significantly affect the observed mechanical response of NiTi (55 wt% Ni), especially the amount of transformation strain available for actuation and thus work output. The investigation we report here extends that original work to ascertain whether further increases in the upper-cycle temperature would produce additional changes in the work output of the material, which has a stress-free austenite finish temperature of 113 C, and to determine the optimum cyclic conditions. Thus, isobaric, thermal-cycle experiments were conducted on the aforementioned alloy at various stresses from 50-300 MPa using upper-cycle temperatures of 165, 200, 230, 260, 290, 320 and 350 C. The data indicated that the amount of applied stress influenced the transformation strain, as would be expected. However, the maximum temperature reached during the thermal excursion also plays an equally significant role in determining the transformation strain, with the maximum transformation strain observed during thermal cycling to 290 C. In situ neutron diffraction at stress and temperature showed that the differences in transformation strain were mostly related to changes in martensite texture when cycling to different upper-cycle temperatures. Hence, understanding this effect is important to optimizing the operation of SMA-based actuators and could lead to new methods for processing and training shape memory alloys for optimal performance.

Padula, Santo, II↗
NASA NTRS1994

Perceptual Repetition Blindness Effects

The phenomenon of repetition blindness (RB) may reveal a new limitation on human perceptual processing. Recently, however, researchers have attributed RB to post-perceptual processes such as memory retrieval and/or reporting biases. The standard rapid serial visual presentation (RSVP) paradigm used in most RB studies is, indeed, open to such objections. Here we investigate RB using a "single-frame" paradigm introduced by Johnston and Hale (1984) in which memory demands are minimal. Subjects made only a single judgement about whether one masked target word was the same or different than a post-target probe. Confidence ratings permitted use of signal detection methods to assess sensitivity and bias effects. In the critical condition for RB a precue of the post-target word was provided prior to the target stimulus (identity precue), so that the required judgement amounted to whether the target did or did not repeat the precue word. In control treatments, the precue was either an unrelated word or a dummy.

Hochhaus, Larry↗
NASA NTRS1990

Multiprocessor architecture: Synthesis and evaluation

Multiprocessor computed architecture evaluation for structural computations is the focus of the research effort described. Results obtained are expected to lead to more efficient use of existing architectures and to suggest designs for new, application specific, architectures. The brief descriptions given outline a number of related efforts directed toward this purpose. The difficulty is analyzing an existing architecture or in designing a new computer architecture lies in the fact that the performance of a particular architecture, within the context of a given application, is determined by a number of factors. These include, but are not limited to, the efficiency of the computation algorithm, the programming language and support environment, the quality of the program written in the programming language, the multiplicity of the processing elements, the characteristics of the individual processing elements, the interconnection network connecting processors and non-local memories, and the shared memory organization covering the spectrum from no shared memory (all local memory) to one global access memory. These performance determiners may be loosely classified as being software or hardware related. This distinction is not clear or even appropriate in many cases. The effect of the choice of algorithm is ignored by assuming that the algorithm is specified as given. Effort directed toward the removal of the effect of the programming language and program resulted in the design of a high-level parallel programming language. Two characteristics of the fundamental structure of the architecture (memory organization and interconnection network) are examined.

Standley, Hilda M.↗
NASA NTRS1991

Parallel computation of aerodynamic influence coefficients for aeroelastic analysis on a transputer network

Aeroelastic analysis is mult-disciplinary and computationally expensive. Hence, it can greatly benefit from parallel processing. As part of an effort to develop an aeroelastic analysis capability on a distributed-memory transputer network, a parallel algorithm for the computation of aerodynamic influence coefficients is implemented on a network of 32 transputers. The aerodynamic influence coefficients are calculated using a three-dimensional unsteady aerodynamic model and a panel discretization. Efficiencies up to 85 percent are demonstrated using 32 processors. The effects of subtask ordering, problem size and network topology are presented. A comparison to results on a shared-memory computer indicates that higher speedup is achieved on the distributed-memory system.

Janetzke, D. C.↗
NASA NTRS1995

The Impact on Space Radiation Requirements and Effects on ASIMS

The evolution of highly miniaturized electronic and mechanical systems will be accompanied by new problems and issues regarding the radiation response of these systems in the space environment. In this paper we discuss some of the more prominent radiation problems brought about by miniaturization. For example, autonomous micro-spacecraft will require large amounts of high density memory, most likely in the form of stacked, multichip modules of DRAM's, that must tolerate the radiation environment. However, advanced DRAM's (16 to 256 Mbit) are quite susceptible to radiation, particularly single event effects, and even exhibit new radiation phenomena that were not a problem for older, less dense memory chips. Another important trend in micro-spacecraft electronics is toward the use of low-voltage microelectronic systems that consume less power. However, the reduction in operating voltage also caries with it an increased susceptibility to radiation. In the case of application specific integrated microcircuits (ASIM's), advanced devices of this type, such as high density field programmable gate arrays (FPGA's) exhibit new single event effects (SEE), such as single particle reprogramming of anti-fuse links. New advanced bipolar circuits have been shown recently to degrade more rapidly in the low dose rate space environment than in the typical laboratory total dose radiation test used to qualify such devices. Thus total dose testing of these parts is no longer an appropriately conservative measure to be used for hardness assurance. We also note that the functionality of micromechanical Si-based devices may be altered due to the radiation-induced deposition of charge in the oxide passivation layers.

Barnes, C.↗
NASA NTRS1987

Rare-earth substitution in (BiYCa)3(FeSiGe)5O12 bubble films

The substitution of Y by Sm, Tb, Gd, and Ho in (BiYCa)3 FeSiGe)5O12 bubble garnet is shown to have large effects on the growth-induced anisotropy (GIA). The presently accepted film composition intended for 6-or 8-micron-period bubble memory devices demands partial substitution of Y by Gd and Ho. However, comparing films grown under the same growth conditions, it is observed that YGdHoBilG films posess less (GIA) than their Gd, Ho-free counterparts. Thus, to satisfy (GIA) requirements, the supercooling during growth must be increased by 20 K to 80 K with undesirable effects on defect densities. A new film composition containing Sm, Tb, and Gd has been formulated to satisfy all known material property specifications for 6- or 8-micron-period memory devices. It can be grown with only 45-50 K supercooling.

Luther, L. C.↗
NASA NTRS1982

Application of digital image analysis techniques to antimisting fuel spray characterization

Pulsed ruby laser sheet illumination of the spray is used for the initial recording of data on very-high-resolution photographic film. The digitization of mosaic elements is effected with a vidicon and video digitizer whose output is stored in computer RAM memory for processing. Highly nonspherical elements and a broad range of drop diameters (8-2000 microns) resulting from the unusual rheological properties of the fuel-additive system are accommodated by the device configuration and algorithms. It is found that the generation of two-dimensional images by means of scattered light also eliminates errors resulting from variations in the index of refraction and from the submicron scattering sites that are often present within the modified fuel. No a priori information on the drop size distribution or on the system response to various drop sizes is required.

Fleeter, R.↗
NASA NTRS1990

Environment induced anomalies on the TDRS and the role of spacecraft charging

The NASA Tracking and Data Relay Satellites (TDRS) have experienced several classes of anomalies that appear to be related to the natural environment. The most serious of these have been anomalies in the Attitude Control System control processor electronics which resulted in check sum errors that were ultimately traced to high-energy, particle-induced single event upsets in the RAM memory. Three other types of anomalies on TDRS have also been correlated with environmental effects. This paper briefly documents the occurrences of these anomalies and describes the nature of each. These events are correlated with various environmental factors. For all cases, there appears to be a causal relationship between spacecraft charging events and the engineering anomalies.

Garrett, H. B.↗
NASA NTRS1939

Surface heat-transfer coefficients of finned cylinders

An investigation to determine and correlate the experimental surface heat-transfer coefficients of finned cylinders with different air-stream cooling arrangements was conducted at the Langley Memorial Aeronautical Laboratory from 1932 to 1938. The investigation covered the determination of the effect of fin width, fin space, fin thickness, and cylinder diameter on the heat transfer. Wind-tunnel tests were made in the free air stream with and without baffles and also with various devices for creating a turbulent air stream. Tests were also made with blower.

Ellerbrock, Herman H , Jr↗
NASA NTRS1994

Nonvolatile GaAs Random-Access Memory

Proposed random-access integrated-circuit electronic memory offers nonvolatile magnetic storage. Bits stored magnetically and read out with Hall-effect sensors. Advantages include short reading and writing times and high degree of immunity to both single-event upsets and permanent damage by ionizing radiation. Use of same basic material for both transistors and sensors simplifies fabrication process, with consequent benefits in increased yield and reduced cost.

Katti, Romney R.↗
NASA NTRS2014

Single-Event Effect Response of a Commercial ReRAM

We show heavy ion test results of a commercial production-level ReRAM. The memory array is robust to bit upsets. However the ReRAM system is vulnerable to SEFIs due to upsets in peripheral circuits, including the sense amplifier.

commercial-off-the-shelf (COT)↗
NASA NTRS2001

Updated Electronic Testbed System

As we continue to advance in exploring space frontiers, technology must also advance. The need for faster data recovery and data processing is crucial. In this, the less equipment used, and lighter that equipment is, the better. Because integrated circuits become more sensitive in high altitude, experimental verification and quantification is required. The Center for Applied Radiation Research (CARR) at Prairie View A&M University was awarded a grant by NASA to participate in the NASA ER-2 Flight Program, the APEX balloon flight program, and the Student Launch Program. These programs are to test anomalous errors in integrated circuits due to single event effects (SEE). CARR had already begun experiments characterizing the SEE behavior of high speed and high density SRAM's. The research center built a error testing system using a PC-104 computer unit, an Iomega Zip drive for storage, a test board with the components under test, and a latchup detection and reset unit. A test program was written to continuously monitor a stored data pattern in the SRAM chip and record errors. The devices under test were eight 4Mbit memory chips totaling 4Mbytes of memory. CARR was successful at obtaining data using the Electronic TestBed System (EBS) in various NASA ER-2 test flights. These series of high altitude flights of up to 70,000 feet, were effective at yielding the conditions which single event effects usually occur. However, the data received from the series of flights indicated one error per twenty-four hours. Because flight test time is very expensive, the initial design proved not to be cost effective. The need for orders of magnitude with more memory became essential. Therefore, a project which could test more memory within a given time was created. The goal of this project was not only to test more memory within a given time, but also to have a system with a faster processing speed, and which used less peripherals. This paper will describe procedures used to build an updated Electronic Testbed System.

Brewer, Kevin L.↗
NASA NTRS2006

Radiation Tolerant Intelligent Memory Stack (RTIMS)

The Radiation Tolerant Intelligent Memory Stack (RTIMS), suitable for both geostationary and low earth orbit missions, has been developed. The memory module is fully functional and undergoing environmental and radiation characterization. A self-contained flight-like module is expected to be completed in 2006. RTIMS provides reconfigurable circuitry and 2 gigabits of error corrected or 1 gigabit of triple redundant digital memory in a small package. RTIMS utilizes circuit stacking of heterogeneous components and radiation shielding technologies. A reprogrammable field programmable gate array (FPGA), six synchronous dynamic random access memories, linear regulator, and the radiation mitigation circuitries are stacked into a module of 42.7mm x 42.7mm x 13.00mm. Triple module redundancy, current limiting, configuration scrubbing, and single event function interrupt detection are employed to mitigate radiation effects. The mitigation techniques significantly simplify system design. RTIMS is well suited for deployment in real-time data processing, reconfigurable computing, and memory intensive applications.

Ng, Tak-kwong↗