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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Phenomena Simulation for Heavy Doping and Surface Recombination Velocity

The theoretical models now available that characterize heavily doped (highly conducting) regions in silicon are survyed. Analytical and numerical approaches that determine the influence of such regions on the conversion efficiency of solar cells are examined. Although dilutely doped silicon is well characterized except for some disagreement about optical absorption coefficients, what exists now for heavily doped silicon and its interplay with adjoining regions is an incomplete theory in which not all contributers to transport, recombination, generation, and trapping are defined. Further, the parameters relating to these mechanisms and their values as determined by experiment are subject to various interpretations. The characterization of heavily doped silicon is treated not as a theory but rather as an imperfectly articulated and incompletely formalized body of experience. This view is intended to help point the way toward the attainment of a more complete of heavily doped silicon and thereby toward more informed designs of solar cells. Because computer programs constitute tools both for design and for estimating performance limits, the review includes some remarks pertinent to existing and developing programs.

Lindholm, F. A.↗
NASA NTRS1984

Recombination-active defects in silicon ribbon and polycrystalline solar cells

This paper reports results from a study of recombination-active structural defects in silicon ribbon and polycrystalline solar cells using the electron beam induced current (EBIC) technique in a scanning electron microscope. It is demonstrated that low temperature EBIC measurements can reveal a range of defects that are not observable at room temperature, including slip dislocations in silicon dendritic web ribbons as well as decorated twin boundaries and dislocation complexes in cast polycrystalline silicon solar cell materials.

Cheng, L. J.↗
NASA NTRS1985

Surface-catalyzed recombination into excited electronic, vibrational, rotational, and kinetic energy states: A review

Laboratory experiments in which recombined CO, CO2, D2O, OH, N2, H2, and O2 molecules desorb from surfaces in excited internal and translational states are briefly reviewed. Unequilibrated distributions predominate from the principally catalytic metal substrates so far investigated. Mean kinetic energies have been observed up to approx. 3x, and in some cases less than, wall-thermal; the velocity distributions generally vary with emission angle, with non-Lambertian particle fluxes. The excitation state populations are found to depend on surface impurities, in an as yet unexplained way.

Kofsky, I. L.↗
NASA NTRS1986

Oxygen recombination in individual pressure vessel nickel-hydrogen batteries

A metal-hydrogen cell is described which avoids damage and retards flooding of the hydrogen electrodes by providing for chemical recombination of oxygen and hydrogen in areas or sites remote from the hydrogen electrodes. In the metal-hydrogen cell, a plurality of electrical cell units are place in a back to back relationship. The cells may be lined with a wick, having one or more catalyzed sites on the inner surface of the cell. Separators disposed between the respective metal and hydrogen electrodes of each cell unit are provided with gas directing notches around their peripheries to facilitate the desired movement of gasses within the metal-hydrogen cell. Any two metal electrodes separated by a gas screen are provided with gas tight sealing means between the electrodes at each aperature. The sealing means may be a fing of rubber or elastomeric material which is somewhat compressible but nonreactive with other materials in the cell.

Smithrick, J. J.↗
NASA NTRS1985

Advanced techniques for the measurement of multiple recombination parameters in solar cells

A survey of bulk recombination measurement techniques was presented. Classical methods were reviewed along with their limiting assumptions and simplifications. A modulated light measurement system was built and showed the large effects of junction capacitance. Techniques for extension of classical methods for measurement of multiparameter multiregression measurements were identified and analyzed.

Newhouse, M.↗
NASA NTRS1986

Measurement of carrier transport and recombination parameter in heavily doped silicon

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Swanson, Richard M.↗
NASA NTRS1987

Recombination imaging of III-V solar cells

An imaging technique based on the radiative recombination of minority carriers in forward-biased solar cells has been developed for characterization of III-V solar cells. When used in mapping whole wafers, it has helped identify three independent loss mechanisms (broken grid lines, shorting defects, and direct-to-indirect bandgap transitions), all of which resulted in lower efficiencies. The imaging has also led to improvements in processing techniques to reduce the occurrence of broken gridlines as well as surface defects. The ability to visualize current mechanisms in solar cells is an intuitive tool which is powerful in its simplicity.

Virshup, G. F.↗
NASA NTRS1986

Carrier surface generation and recombination effects in photoconduction of HgI2 single crystals

Dc photoconductivity characteristics of HgI2 single crystals have been measured in the range of 1.75-2.75 eV, using CuI as a transparent electrical contact. Hole and electron photocurrents could be separately measured by applying different voltage polarities to the illuminated electrode. It is shown that charge carrier generation near the surface is highly extrinsic, as displayed by differences in the hole and electron photogeneration spectra. Analysis of the photoconductivity versus voltage characteristics indicates that the hole and electron bulk trapping times satisfy greater than 70 and 3 microsec, respectively. The hole and electron surface recombination velocities were 1.0 x 10 to the 4th cm/s and 8 x 10 to the 5th cm/s, respectively.

Burshtein, Z.↗
NASA NTRS1986

Thermospheric production of O(1S) by dissociative recombination of vibrationally excited O2(+)

High spectral resolution line profiles at 5577 A of the nighttime, F-region O(1S) emission measured by the Fabry-Perot interferometer on board the Dynamics Explorer satellite are analyzed using a continuous O(1S) relaxation model. The model is an improvement over the previous model of Killeen and Hays (1981) in that energy loss via elastic collision is considered in addition to the single collision, excitation exchange thermalization process. The results show that the active channel for O(1S) production is capture into the 1Sigma(+)u repulsive state of O2 and that the main contributor to its production is the dissociative recombination of O2(+) ions in vibrational levels v = 1 and 2 in agreement with the quantal calculations of Guberman (1983).

Yee, Jeng-Hwa↗
NASA NTRS1987

Recombination-line intensities for hydrogenic ions. I - Case B calculations for H I and He II

Assuming Case B of Baker and Menzel (1938), the relative intensities of H I and He II recombination lines are determined for a larger range of temperature and density than previously considered and with the upper principle quantum number up to 50 and the lower number up to 29. Full collisional effects are included, and new collision strengths for the n = 1, 2, and 3 states of He(+) are presented. Case B theory is found to be invalidated for collisional excitation of the n = 3 levels from both n = 1 and n = 2 states under certain conditions which depend upon electron density and the Lyman-alpha escape probability, and the regimes of temperature and density for which Case B is valid are also considered.

Hummer, D. G.↗
NASA NTRS1986

Windows in direct dissociative recombination cross sections

Model potential curves are used to show that large windows are present in direct dissociative-recombination cross sections from excited molecular-ion vibrational levels. The windows are due to the overlap of vibrational wave functions of the repulsive neutral states with the nodes of the ion vibrational wave function.

Guberman, Steven L.↗
NASA NTRS1987

Analysis of the interaction of a laser pulse with a silicon wafer - Determination of bulk lifetime and surface recombination velocity

The decay of excess minority carriers produced in a silicon wafer of thickness d by a laser pulse is analyzed. A comprehensive theory based on this analysis is presented for the determination of bulk lifetime Tau(b) and surface recombination velocity S. It is shown that, starting with an exponential spatial profile, the carrier profile assumes a spatially symmetrical form after approximately one time constant of the fundamental mode of decay. Expressions for the spatial average of the carrier density as a function of time are derived for three temporal laser pulse shapes: impulse, square, and Gaussian. Particular attention is paid to the time constants of the fundamental and higher modes of decay. The ratios of the time constants of the higher modes to the fundamental mode, as well as the time constant of the fundamental mode, are presented over wide ranges of values of S and d. For Sd less than about 40 sq cm/s, a two-wafer method is developed to determine Tau(b) and S; it is also shown that the requirement of d/Tau(b) greater than about 20S is sufficient to adequately guarantee that the asymptotic value of the instantaneous observed lifetime differs from the bulk lifetime by no more than 10 percent.

Luke, Keung L.↗
NASA NTRS1987

The production of O(1S) from dissociative recombination of O2(+)

The first theoretical calculations of the rate coefficient alpha for dissociative recombination of O2(+) leading to O(1S) are reported for a wide range of temperatures. The findings are discussed in terms of the potential energy curves for the ground state of O2(+) and for the dissociative 1Sigma(u) state calculated here. Values of alpha for the equilibrium case in which the electron and vibrational temperatures are identical are shown.

Guberman, Steven L.↗
NASA NTRS1988

Calculations of rate constants for the three-body recombination of H2 in the presence of H2

A new global potential energy hypersurface for H2 + H2 is constructed and quasiclassical trajectory calculations performed using the resonance complex theory and energy transfer mechanism to estimate the rate of three body recombination over the temperature range 100 to 5000 K. The new potential is a faithful representation of ab initio electron structure calculations, is unchanged under the operation of exchanging H atoms, and reproduces the accurate H3 potential as one H atom is pulled away. Included in the fitting procedure are geometries expected to be important when one H2 is near or above the dissociation limit. The dynamics calculations explicitly include the motion of all four atoms and are performed efficiently using a vectorized variable-stepsize integrator. The predicted rate constants are approximately a factor of two smaller than experimental estimates over a broad temperature range.

Schwenke, David W.↗
NASA NTRS1986

Catalytic recombination of dissociation products with Pt/SnO2 for rare and common isotope long-life, closed-cycle CO2 lasers

This paper reports results on recombination of pulsed CO2 laser dissociation products with Pt/SnO2 catalysts, and supporting studies in a surrogate laboratory catalyst reactor. The closed-cycle, pulsed CO2 laser has been continuously operated for one million pulses with an overall power degradation of less than 5 percent by flowing the laser gas mixture through a 2-percent Pt/SnO2 catalyst bed. In the surrogate laboratory reactor, experiments have been conducted to determine isotopic exchange with the catalyst when using rare-isotope gases. The effects of catalyst pretreatment, sample weight, composition, and temperature on catalyst efficiency have also been determined.

Brown, Kenneth G.↗
NASA NTRS1988

Carbon and helium abundances in Wolf-Rayet WC stars determined from optical recombination lines

Carbon to helium ratios and ionization fractions are derived for 74 WC stars in the Galaxy and the LMC from optically thin recombination lines at visual wavelengths. The range of C/He ratios is 0.13 to 0.79 by number, similar to the ratios calculated by Nugis (1975) and about 20 times greater than the ratios of Smith and Willis (1982). These ratios also agree with the abundances determined in the most recent evolutionary models of massive stars, which include mass loss, convective dredge-up, and new nuclear reaction rates. The range of values found for the C/He ratios implies that the convective cores of WC stars do not occupy a very large mass fraction. The C/He ratio differs within a subtype by a factor of three or less, but the mean tends to increase toward earlier subtypes, although the standard deviation from the mean is large enough to allow the interpretation that the C/He ratio is constant for all WC subtypes.

Torres, Ana V.↗
NASA NTRS1988

The sensitivity of gas-phase models of dense interstellar clouds to changes in dissociative recombination branching ratios

The approach of Bates to the determination of neutral product branching ratios in ion-electron dissociative recombination reactions has been utilized in conjunction with quantum chemical techniques to redetermine branching ratios for a wide variety of important reactions of this class in dense interstellar clouds. The branching ratios have then been used in a pseudo time-dependent model calculation of the gas phase chemistry of a dark cloud resembling TMC-1 and the results compared with an analogous model containing previously used branching ratios. In general, the changes in branching ratios lead to stronger effects on calculated molecular abundances at steady state than at earlier times and often lead to reductions in the calculated abundances of complex molecules. However, at the so-called 'early time' when complex molecule synthesis is most efficient, the abundances of complex molecules are hardly affected by the newly used branching ratios.

Millar, T. J.↗
NASA NTRS1988

The excitation of the O(1S) state by the dissociative recombination of O2(+) ions - Electron temperature dependence

The rate coefficient for the excitation of the O(1S) state due to the dissociative recombination of O2(+) (v of not greater than 3) ions has been determined as a function of the electron temperature from 300-3500 K. In agreement with the work of Guberman (1987), the results suggest that the absolute magnitude of alpha(1S) is nearly the same for a wide variety of O2(+) vibrational distributions over the electron temperature range normally encountered in the nocturnal F-region. It is noted that previous studies which modeled 5577-A airglow data using a fixed value for f(1S) may be misleading.

Zipf, Edward C.↗