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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Ultra-thin, light-trapping silicon solar cells

Design concepts for ultra-thin (2 to 10 microns) high efficiency single-crystal silicon cells are discussed. Light trapping allows more light to be absorbed at a given thickness, or allows thinner cells of a given Jsc. Extremely thin cells require low surface recombination velocity at both surfaces, including the ohmic contacts. Reduction of surface recombination by growth of heterojunctions of ZnS and GaP on Si has been demonstrated. The effects of these improvements on AM0 efficiency is shown. The peak efficiency increases, and the optimum thickness decreases. Cells under 10 microns thickness can retain almost optimum power. The increase of absorptance due to light trapping is considered. This is not a problem if the light-trapping cells are sufficiently thin. Ultra-thin cells have high radiation tolerance. A 2 microns thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50 microns thick coverglass, the thin cells had specific power after irradiation over ten times higher than the baseline design.

Landis, Geoffrey A.↗
NASA NTRS1989

The GaAs solar cells with V-grooved emitters

Geometrically structured surfaces have become increasingly important to solar cell efficiency improvements and radiation tolerance. Gallium arsenide solar cells with a V-grooved front surface which demonstrate improved optical coupling and higher short-circuit current compared to planar cells were fabricated. GaAs homojunction cells were fabricated by organometallic chemical vapor deposition (OMCVD) on an n+ substrate. The V-grooves were formed on the surface with an anisotropic etch, and an n-type buffer and p-type emitter were grown by OMCVD, followed by ohmic contacts. Reflectivity measurements show significantly lower reflectance for the microgrooved cell compared to the planar structure. The short circuit current of the V-grooved solar cell is consistently higher than that of the planar controls.

Bailey, Sheila G.↗
NASA NTRS1989

On-orbit results of the LIPS 3/InP homojunction solar cell experiment

The flight performance of NASA Lewis Research Center's indium phosphide homojunction solar cell module on the LIPS 3 satellite is presented. A module of four n+p cells was fabricated and has been on-orbit on the LIPS 3 spacecraft since 1987. The experimental objective is the measurement of InP cell performance in the natural radiation environment of the 1100 kilometer altitude, 60 deg inclination, circular orbit. Flight data from the first year is near expected values, with no degradation in short-circuit current. The temperature dependence of current-voltage parameters is included along with the laboratory radiation tolerance studies necessary for normalization and analysis of the data. Details of the cell structure and flight module design are also discussed.

Brinker, David J.↗
NASA NTRS1989

Advances in thin-film solar cells for lightweight space photovoltaic power

The development of photovoltaic arrays beyond the next generation is discussed with attention given to the potentials of thin-film polycrystalline and amorphous cells. Of particular importance is the efficiency (the fraction of incident solar energy converted to electricity) and specific power (power to weight ratio). It is found that the radiation tolerance of thin-film materials is far greater than that of single crystal materials. CuInSe2 shows no degradation when exposed to 1-MeV electrons.

Landis, Geoffrey A.↗
NASA NTRS1988

Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+ InP solar cells on incident intensities up to 200 AM0 and temperatures up to 100 deg C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 deg C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 deg C. With efficiencies near 22 percent at 80 deg C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.

Goradia, Chandra↗
NASA NTRS1988

Thin, light-trapping silicon solar cells for space

Ultrathin silicon solar cells with high efficiency and radiation tolerance can be made by incorporating light-trapping and heterojunction surface passivation. Calculations show that a 2-micron-thick light-trapping cell remains over 18 percent efficient after the equivalent of 20 years in geosynchronous orbit. Including a 50-micron coverglass, the thin cells had, after irradiation, a specific power over ten times higher than that of the baseline design.

Landis, Geoffrey A.↗
NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗
NASA NTRS1991

Annealing characteristics of irradiated hydrogenated amorphous silicon solar cells

It was shown that 1 MeV proton irradiation with fluences of 1.25E14 and 1.25E15/sq cm reduces the normalized I(sub SC) of a-Si:H solar cell. Solar cells recently fabricated showed superior radiation tolerance compared with cells fabricated four years ago; the improvement is probably due to the fact that the new cells are thinner and fabricated from improved materials. Room temperature annealing was observed for the first time in both new and old cells. New cells anneal at a faster rate than old cells for the same fluence. From the annealing work it is apparent that there are at least two types of defects and/or annealing mechanisms. One cell had improved I-V characteristics following irradiation as compared to the virgin cell. The work shows that the photothermal deflection spectroscopy (PDS) and annealing measurements may be used to predict the qualitative behavior of a-Si:H solar cells. It was anticipated that the modeling work will quantitatively link thin film measurements with solar cell properties. Quantitative predictions of the operation of a-Si:H solar cells in a space environment will require a knowledge of the defect creation mechanisms, defect structures, role of defects on degradation, and defect passivation and annealing mechanisms. The engineering data and knowledge base for justifying space flight testing of a-Si:H alloy based solar cells is being developed.

Payson, J. S.↗
NASA NTRS1990

Synthesis and structures of metal chalcogenide precursors

The reactivity of early transition metal sandwich complexes with sulfur-rich molecules such as dithiocarboxylic acids was studied. Researchers recently initiated work on precursors to CuInSe2 and related chalcopyrite semiconductors. Th every high radiation tolerance and the high absorption coefficient of CuInSe2 makes this material extremely attractive for lightweight space solar cells. Their general approach in early transition metal chemistry, the reaction of low-valent metal complexes or metal powders with sulfur and selenium rich compounds, was extended to the synthesis of chalcopyrite precursors. Here, the researchers describe synthesis, structures, and and routes to single molecule precursors to metal chalcogenides.

Hepp, Aloysius F.↗
NASA NTRS1990

Optimal design study of high efficiency indium phosphide space solar cells

Recently indium phosphide solar cells have achieved beginning of life AMO efficiencies in excess of 19 pct. at 25 C. The high efficiency prospects along with superb radiation tolerance make indium phosphide a leading material for space power requirements. To achieve cost effectiveness, practical cell efficiencies have to be raised to near theoretical limits and thin film indium phosphide cells need to be developed. The optimal design study is described of high efficiency indium phosphide solar cells for space power applications using the PC-1D computer program. It is shown that cells with efficiencies over 22 pct. AMO at 25 C could be fabricated by achieving proper material and process parameters. It is observed that further improvements in cell material and process parameters could lead to experimental cell efficiencies near theoretical limits. The effect of various emitter and base parameters on cell performance was studied.

Jain, Raj K.↗
NASA NTRS1990

Recent results from the InP homojunction cell module on the LIPS III spacecraft

The flight performance of the NASA Lewis Research Center's indium phosphide homojunction cell module on the LIPs III spacecraft is presented. Four n+-p diffused junction cells, an early product of an InP development program, were flown. The voltage range of the data prohibits determination of the open-circuit voltage or the maximum power point. However, analysis of the 32 months of short-circuit current data reveals a slight increase, not the 4 percent decrease expected from radiation tolerance studies. This increase may be due to continual cleaning of possible prelaunch dust contamination or changes in data acquisition system calibration. For all cells, the average short-circuit current remains below prelaunch values.

Brinker, David J.↗
NASA NTRS1992

Advances in photovoltaic technology

The advances in solar cell efficiency, radiation tolerance, and cost in the last 10 years are presented. The potential performance of thin-film solar cells in space is examined, and the cost and the historical trends in production capability of the photovoltaics industry are considered with respect to the needs of satellite solar power systems. Attention is given to single-crystal cells, concentrator and cascade cells, and thin-film solar cells.

Landis, G. A.↗
NASA NTRS1993

Spacecraft computer technology at Southwest Research Institute

Southwest Research Institute (SwRI) has developed and delivered spacecraft computers for a number of different near-Earth-orbit spacecraft including shuttle experiments and SDIO free-flyer experiments. We describe the evolution of the basic SwRI spacecraft computer design from those weighing in at 20 to 25 lb and using 20 to 30 W to newer models weighing less than 5 lb and using only about 5 W, yet delivering twice the processing throughput. Because of their reduced size, weight, and power, these newer designs are especially applicable to planetary instrument requirements. The basis of our design evolution has been the availability of more powerful processor chip sets and the development of higher density packaging technology, coupled with more aggressive design strategies in incorporating high-density FPGA technology and use of high-density memory chips. In addition to reductions in size, weight, and power, the newer designs also address the necessity of survival in the harsh radiation environment of space. Spurred by participation in such programs as MSTI, LACE, RME, Delta 181, Delta Star, and RADARSAT, our designs have evolved in response to program demands to be small, low-powered units, radiation tolerant enough to be suitable for both Earth-orbit microsats and for planetary instruments. Present designs already include MIL-STD-1750 and Multi-Chip Module (MCM) technology with near-term plans to include RISC processors and higher-density MCM's. Long term plans include development of whole-core processors on one or two MCM's.

Shirley, D. J.↗
NASA NTRS1993

Workshop summary: New silicon cells

The workshop on new silicon cells held during SPRAT12 is summarized. A smaller than average group attended this workshop reflecting the reduction in research dollars available to this portion of the photovoltaics community. Despite the maturity of the silicon technology, a core of the group maintained an excitement about new developments and potential opportunities. The group addressed both the implications and the applications of recent developments. Topics discussed include: light trapping and ultrathin silicon cells; different uses for silicon cells; new silicon cell developments; and radiation tolerant high efficiency cells.

Meulenberg, A.↗
NASA NTRS1991

Experience with custom processors in space flight applications

The Applied Physics Laboratory (APL) has developed a magnetometer instrument for a swedish satellite named Freja with launch scheduled for August 1992 on a Chinese Long March rocket. The magnetometer controller utilized a custom microprocessor designed at APL with the Genesil silicon compiler. The processor evolved from our experience with an older bit-slice design and two prior single chip efforts. The architecture of our microprocessor greatly lowered software development costs because it was optimized to provide an interactive and extensible programming environment hosted by the target hardware. Radiation tolerance of the microprocessor was also tested and was adequate for Freja's mission -- 20 kRad(Si) total dose and very infrequent latch-up and single event upset events.

Fraeman, M. E.↗
NASA NTRS1993

Radiation hardened microprocessor for small payloads

The RH-3000 program is developing a rad-hard space qualified 32-bit MIPS R-3000 RISC processor under the Naval Research Lab sponsorship. In addition, under IR&D Harris is developing RHC-3000 for embedded control applications where low cost and radiation tolerance are primary concerns. The development program leverages heavily from commercial development of the MIPS R-3000. The commercial R-3000 has a large installed user base and several foundry partners are currently producing a wide variety of R-3000 derivative products. One of the MIPS derivative products, the LR33000 from LSI Logic, was used as the basis for the design of the RH-3000 chipset. The RH-3000 chipset consists of three core chips and two support chips. The core chips include the CPU, which is the R-3000 integer unit and the FPA/MD chip pair, which performs the R-3010 floating point functions. The two support whips contain all the support functions required for fault tolerance support, real-time support, memory management, timers, and other functions. The Harris development effort had first passed silicon success in June, 1992 with the first rad-hard 32-bit RH-3000 CPU chip. The CPU device is 30 kgates, has a 508 mil by 503 mil die size and is fabricated at Harris Semiconductor on the rad-hard CMOS Silicon on Sapphire (SOS) process. The CPU device successfully passed tesing against 600,000 test vectors derived directly on the LSI/MIPS test suite and has been operational as a single board computer running C code for the past year. In addition, the RH-3000 program has developed the methodology for converting commercially developed designs utilizing logic synthesis techniques based on a combination of VHDK and schematic data bases.

Shah, Ravi↗
NASA NTRS1992

Future manned systems advanced avionics study

COTS+ was defined in this study as commercial off-the-shelf (COTS) products, ruggedized and militarized components, and COTS technology. This study cites the benefits of integrating COTS+ in space, postulates a COTS+ integration methodology, and develops requirements and an architecture to achieve integration. Developmental needs and concerns were identified throughout the study; these needs, concerns, and recommendations relative to their abatement are subsequently presented for further action and study. The COTS+ concept appears workable in part or in totality. No COTS+ technology gaps were identified; however, radiation tolerance was cited as a concern, and the deferred maintenance issue resurfaced. Further study is recommended to explore COTS+ cost-effectiveness, maintenance philosophy, needs, concerns, and utility metrics. The generation of a development plan to further investigate and integrate COTS+ technology is recommended. A COTS+ transitional integration program is recommended. Sponsoring and establishing technology maturation programs and COTS+ engineering and standards committees are deemed necessary and are recommended for furthering COTS+ integration in space.

Sawamura, Bob↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗