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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Corrosion Behavior of Ta-10W Coatings on CP-Ti and TC4 Substrates

The corrosion resistance of commercial purity titanium (CP-Ti) and Ti-6Al-4V (TC4) alloys coated with Ta-10W via multi-arc ion plating is investigated. The coating with uniform thickness exhibited silvery, dense, and continuous surface without apparent defects. The interface between the Ta-10W coating and substrate was dense with light elemental diffusion. The coating x-ray diffraction profile was body-centered cubic, α-Ta. The corrosion current density of the coated samples was reduced by one order of magnitude in 3.5% HCl solution, compared to that of the substrates. Electrochemical impedance spectroscopy showed that the Ta-10W coating improved the substrate metal corrosion resistance by slowing down the corrosion tendency and rate, increasing the charge transfer resistance and dielectric property of the double layer. Electrochemical corrosion testing showed that the Ta-10W coating improved the substrates’ corrosion resistances. After immersion in 5% HCl solution for 168 h, the uncoated substrates exhibited severe corrosion, whereas the CP-Ti and TC4 substrates coated by Ta-10W were still intact and dense. Point scanning of the immersed corrosion demonstrated that the Ta-10W coating reduced the relative oxygen content from 5.17 to 0.78% of the TC4. These results indicated that the Ta-10W coating was efficient in protecting the CP-Ti and TC4 from corrosion.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Growth of carbon nanotube forests on flexible metal substrates: Advances, challenges, and applications

Owing to their remarkable properties and ordered architecture, vertically aligned CNT forests (VACNT) hold promises for countless applications ranging from energy storage to multifunctional fiber production. Over the last three decades, studies of carbon nanotube (CNT) growth have provided invaluable insight into the CNT nucleation and growth mechanism and enabled critical advancements in nanotechnology. Nevertheless, the ability to fully harness the exceptional VACNT properties in commercial devices is bottlenecked by compatibility of current CNT synthesis processes with large-scale manufacturing. Metal foil substrates present an economic alternative to traditional insulating substrates, like silicon or quartz, and are compatible with both roll-to-roll and automated, large-scale, batch processes. Compared to CNT growth on Si substrates, metal foils present additional challenges, such as increased roughness and reactivity at high temperatures. Nonetheless, many successful VACNT growths on conducting metal foils have been reported, which demonstrate the feasibility of metal substrate use for large-volume production of high-quality CNTs. Here, in this review, we discuss advancements in the field of VACNT growth on metal foil and specifically examine different choices for metal substrates, barrier and catalyst layers, deposition and growth methods, resulting CNT characteristics, and highlight a number of applications that benefit from CNT growth on metal substrates and transition to large-scale manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2017

The influence of substrate moisture preparation on bond strength of concrete overlays and the microstructure of the OTZ

The influence of substrate moisture preparation on the direct shear bond strength of composite substrate-overlay specimens was evaluated. The substrate surface was exposed to four different moisture conditions prior to overlay application. A quantitative analysis of backscattered electron images of the microstructure of the overlay transition zone was carried out to quantify its properties along the interface and help analyse the results of the shear bond testing. The results show that pre-wetting the substrate surface prior to application of the overlay provides no added benefit towards increasing the bond strength and may in some cases reduce bond strength significantly. The microstructural investigations confirmed that pre-saturated substrates increase the w/c ratio and the porosity in the overlay transition zone (OTZ), which was found to have a thickness of about 100 μm. The OTZ in overlays cast on dry substrate surfaces had lower porosity and an increased amount of anhydrous cement.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Innovative process for submicronic Cu particle deposition onto various substrates

Highlights: Black-Right-Pointing-Pointer New process for deposition of copper nanoparticles onto various substrates. Black-Right-Pointing-Pointer Functionalization with phosphorus to enhance chemical bonding between Cu and substrate. Black-Right-Pointing-Pointer Control of size, number and location of the deposited particles. Black-Right-Pointing-Pointer Applicable to other metals, possibility to solve problems of assembling in many fields. -- Abstract: The efficiency of composite materials heavily relies on the ability of assembled materials to form strong interfaces, for allowing a good transfer of properties. High chemical affinity between the assembled materials is beneficial to the composite, whereas the assembly of materials with a weak mutual affinity is more difficult. When the interface is known to be non-cohesive, additional elements are commonly used to bond the matrix to the reinforcements. In the case of copper and carbon bonding, boron and chromium layers are frequently used . These additional bonding layers can, however, affect the properties of the composite, degrading for instance its mechanical or thermal properties. We report here an innovative process enabling the selective deposition of copper nanoparticles on substrates of various types (carbon fibers (CF) or nanofibers (CNF), diamond particles, silicon (Si) wafer, alumina plate) and shapes (1D, 2D, 3D). The deposition process involves a phosphate reagent used to functionalize the substrates. Cu nanoparticles deposit precisely onto the functionalized sites of the substrate and can then be used to bond the matrix to reinforcements with weak chemical affinity, such as copper with carbon fibers or diamond particles, therefore avoiding the use of interlayers which might be detrimental to the assembly properties. From a broader perspective, we anticipate that the method described here could enable the deposition of particles of many materials (Cu, Mn, Ti, Ni) onto substrates of various shapes and dimensions, creating bonding layers between materials of low chemical affinity and making easier their assembly without degrading its properties.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Modification of Bi:YIG film properties by substrate surface ion pre-treatment

Highlights: • Effects of substrates ion beam treatment on magnetoptical properties Bi:YIG films. • Substrate surface damage results in sign inversion of the magneto-optical effects. • Atomically smooth films growth takes place on low energy ions treated substrates. • High energy ions treatment results in selective nucleation mechanism of the growth. - Abstract: The effect of a controlled ion beam pre-treatment of (1 1 1)-oriented Gd{sub 3}Ga{sub 5}O{sub 12} substrates on the magneto-optical properties and surface morphology of the ultrathin bismuth-substituted yttrium–iron garnet films with a composition Bi{sub 2.8}Y{sub 0.2}Fe{sub 5}O{sub 12} was studied. It has been shown that the observed sign inversion of magneto-optical effects (Faraday rotation and magnetic circular dichroism) observed in films that were deposited on the GGG substrate pre-treated by 1 keV and 4 keV Ar{sup +} ion beams is a result of the substrate surface amorphization caused by the ion bombardment.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Large-scale uniform ZnO tetrapods on catalyst free glass substrate by thermal evaporation method

Highlights: • Investigate the growth of ZnO-Ts on glass substrate by thermal evaporation method. • Glass substrate without any catalyst or a seed layer. • The morphology was controlled by adjusting the temperature of the material and the substrate. • Glass substrate was placed vertically in the quartz tube. - Abstract: Here, we report for the first time the catalyst-free growth of large-scale uniform shape and size ZnO tetrapods on a glass substrate via thermal evaporation method. Three-dimensional networks of ZnO tetrapods have needle–wire junctions, an average leg length of 2.1–2.6 μm, and a diameter of 35–240 nm. The morphology and structure of ZnO tetrapods were investigated by controlling the preparation temperature of each of the Zn powder and the glass substrate under O{sub 2} and Ar gases. Studies were carried out on ZnO tetrapods using X-ray diffraction, field emission scanning electron microscopy, UV–vis spectrophotometer, and a photoluminescence. The results showed that the sample grow in the hexagonal wurtzite structure with preferentially oriented along (002) direction, good crystallinity and high transmittance. The band gap value is about 3.27 eV. Photoluminescence spectrum exhibits a very sharp peak at 378 nm and a weak broad green emission.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Culturing astrocytes on substrates that mimic brain tumors promotes enhanced mechanical forces

Highlights: • Human astrocytes increase traction forces of cells applied to the ECM in response to increased substrate stiffness. • Astrocytes apply intercellular stresses with noticeable increase in higher substrate stiffness. • Cell velocity decreases in human astrocytes in brain tumor like environment compared to normal brain environment. • Astrocytes mechanical strength and function could be potentially enhanced by increased stiffness of the microenvironment. Astrocytes are essential to brain homeostasis and their dysfunction can have devastating consequences on human quality of life. Such deleterious effects are generally due in part to changes that occur at the cellular level, which may be biochemical or biomechanical in nature. One biomechanical change that can occur is a change in tissue stiffness. Brain tumors are generally associated with increased brain tissue stiffness, but the impact increased tissue stiffness has on astrocyte biomechanical behavior is poorly understood. Therefore, in this study we cultured human astrocytes on flexible substrates with stiffness that mimicked the healthy human brain (1 kPa), meningioma (4 kPa), and glioma (11 kPa) and investigated astrocyte biomechanical behavior by measuring cell-substrate tractions, strain energies, cell-cell intercellular stresses, and cellular velocities. In general, tractions, intercellular stresses, and strain energy was observed to increase as a function of increased substrate stiffness, while cell velocities were observed to decrease with increased substrate stiffness. We believe this study will be of great importance to the fields of brain pathology and brain physiology.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Development of High-Efficiency GaAs Solar Cells Grown on Nanopatterned GaAs Substrates

One approach to reducing the cost of high-efficiency III–V devices involves adding patterned layers to heteroepitaxial or homoepitaxial substrates to facilitate substrate removal and reuse. However, few studies have focused explicitly on high-quality devices grown over patterned substrates, which is required for any cost saving to be beneficial. In this work, we demonstrate the growth of high-efficiency GaAs solar cells on GaAs substrates patterned with an array of nanoscale SiOX mask stripes. We show that reducing the pattern dimensions to submicron length scales with nanoimprint lithography enables defect-free coalescence. By varying the growth conditions, faceting of the epilayer material during overgrowth of the patterned mask was also controlled. A V/III ratio of 200 during MOVPE overgrowth produced smooth coalesced epilayers, which is desirable for the growth of subsequent device layers. Inverted GaAs front homojunction devices grown on patterned GaAs(001) substrates achieved threading dislocation densities below 5 × 10 5 cm –2 and maintained >23% solar cell efficiencies at one sun illumination, equivalent to control devices grown on unpatterned epi-ready substrates.

14 SOLAR ENERGY↗
DOE OSTI2025

Decoding substrate specificity determining factors in glycosyltransferase-B enzymes – insights from machine learning models

Substrate specificity is an essential characteristic of any enzyme's function and an understanding of the factors that determine this specificity is crucial for enzyme engineering. Unlike the structure of an enzyme which is directly impacted by its sequence, substrate specificity as an enzyme attribute involves a rather indirect relationship with sequence as it also depends on structural aspects that dictate substrate accessibility and active site dynamics. In this study, we explore the performance of classifier-based machine learning models trained on curated sequence and structural data for a class of glycosyltransferases (GTs), namely GT-Bs, to understand their substrate specificity determining factors. GTs enable the transfer of sugar moieties to other biomolecules such as oligosaccharides or proteins and are found in all kingdoms of life. In plants, GTs participate in the biosynthesis of plant cell wall biopolymers (e.g.: hemicelluloses and pectins) and are an integral part of the enzymatic machinery that enables the storage of carbon and energy as plant biomass. To elucidate the substrate specificity of uncharacterized GT-Bs, we constructed multi-label machine learning models (Support Vector Classifier, K-Nearest Neighbors, Gaussian Naïve-Bayes, Random Forest) that incorporate both sequence and structural features. These models achieve good predictive accuracies on test datasets. However, despite our use of structural information, we highlight that there is further scope for improvement in training these models to draw interpretable relationships between sequence, structure and substrate specificity determining motifs in GT-Bs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2011

Depth distribution of silver particulate films deposited in softened polystyrene substrates studied through Rutherford backscattering spectrometry

The depth distribution of silver particulate films deposited on softened polystyrene substrates has been studied through Rutherford backscattering spectrometry (RBS). 150 nm thick silver films were deposited on polystyrene (PS) coated glass substrates held at 455 K and 490 K in a vacuum of 8 x 10{sup -6} Torr. The substrates were irradiated with 8 MeV electrons to a dose of 25 kGy prior to deposition. Ion scattering measurements indicated that the silver particulates are formed at a few tens of nanometers beneath the PS surface for both unirradiated and irradiated substrates. The particulate structure seems to be a two-dimensional array rather than a three-dimensional distribution. The morphology of the particulate structure, the depth of maximum concentration of the particles as well as the width of the distribution seems to depend on the deposition rate and substrate temperature. The electron irradiation of the PS substrate gives rise to the modification of the morphology of the particulate structure due to the induced polymer-metal interaction arising from the free radicals created by the irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Substrate nitridation induced modulations in transport properties of wurtzite GaN/p-Si (100) heterojunctions grown by molecular beam epitaxy

Phase pure wurtzite GaN films were grown on Si (100) substrates by introducing a silicon nitride layer followed by low temperature GaN growth as buffer layers. GaN films grown directly on Si (100) were found to be phase mixtured, containing both cubic ({beta}) and hexagonal ({alpha}) modifications. The x-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescence (PL) spectroscopy studies reveal that the significant enhancement in the structural as well as in the optical properties of GaN films grown with silicon nitride buffer layer grown at 800 deg. C when compared to the samples grown in the absence of silicon nitride buffer layer and with silicon nitride buffer layer grown at 600 deg. C. Core-level photoelectron spectroscopy of Si{sub x}N{sub y} layers reveals the sources for superior qualities of GaN epilayers grown with the high temperature substrate nitridation process. The discussion has been carried out on the typical inverted rectification behavior exhibited by n-GaN/p-Si heterojunctions. Considerable modulation in the transport mechanism was observed with the nitridation conditions. The heterojunction fabricated with the sample of substrate nitridation at high temperature exhibited superior rectifying nature with reduced trap concentrations. Lowest ideality factors ({approx}1.5) were observed in the heterojunctions grown with high temperature substrate nitridation which is attributed to the recombination tunneling at the space charge region transport mechanism at lower voltages and at higher voltages space charge limited current conduction is the dominating transport mechanism. Whereas, thermally generated carrier tunneling and recombination tunneling are the dominating transport mechanisms in the heterojunctions grown without substrate nitridation and low temperature substrate nitridation, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Molecular beam epitaxial growth of Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

High quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, X-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi{sub 2}Te{sub 3} and Sb{sub 2}Te{sub 3} films. Hall and magnetoresistance measurements indicate that p type Sb{sub 2}Te{sub 3} and n type Bi{sub 2}Te{sub 3} topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2013

First principle analyses of direct bandgap solar cells with absorbing substrates versus mirrors

Direct bandgap InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P solar cells containing backside mirrors as well as parasitically absorbing substrates are analyzed for their limiting open circuit voltage and power conversion efficiency with comparison to record solar cells. From the principle of detailed balance, it is shown quantitatively that mirror solar cells have greater voltage and power conversion efficiency than their substrate counterparts. Next, the radiative recombination coefficient and maximum radiative lifetime of GaAs mirror and substrate solar cells are calculated and compared to the nonradiative Auger and Shockley-Read-Hall (SRH) lifetimes. Mirror solar cells have greater radiative lifetime than their substrate variants. Auger lifetime exceeds radiative lifetime for both substrate and mirror cells while SRH lifetime may be less or greater than radiative lifetime depending on trap concentration and capture cross section. Finally, the change in free energy of the photogenerated carriers is analyzed in a comparison between InP, GaAs, CdTe, and Ga{sub 0.5}In{sub 0.5}P mirror and substrate solar cells in order to characterize the relationship between solar photon quality and free energy management in solar cells with differing bandgaps. Wider bandgap visible threshold Ga{sub 0.5}In{sub 0.5}P solar cells make better use of the available change in free energy of the photogenerated charge carriers, even when normalized to the bandgap energy, than narrower bandgap near-IR threshold InP, GaAs, and CdTe solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Colloidal quantum dot solar cells on curved and flexible substrates

Colloidal quantum dots (CQDs) are semiconductor nanocrystals synthesized with, processed in, and deposited from the solution phase, potentially enabling low-cost, facile manufacture of solar cells. Unfortunately, CQD solar cell reports, until now, have only explored batch-processing methods—such as spin-coating—that offer limited capacity for scaling. Spray-coating could offer a means of producing uniform colloidal quantum dot films that yield high-quality devices. Here, we explore the versatility of the spray-coating method by producing CQD solar cells in a variety of previously unexplored substrate arrangements. The potential transferability of the spray-coating method to a roll-to-roll manufacturing process was tested by spray-coating the CQD active layer onto six substrates mounted on a rapidly rotating drum, yielding devices with an average power conversion efficiency of 6.7%. We further tested the manufacturability of the process by endeavoring to spray onto flexible substrates, only to find that spraying while the substrate was flexed was crucial to achieving champion performance of 7.2% without compromise to open-circuit voltage. Having deposited onto a substrate with one axis of curvature, we then built our CQD solar cells onto a spherical lens substrate having two axes of curvature resulting in a 5% efficient device. These results show that CQDs deposited using our spraying method can be integrated to large-area manufacturing processes and can be used to make solar cells on unconventional shapes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photo-crystallization in a-Se layer structures: Effects of film-substrate interface-rigidity

Amorphous selenium (a-Se) films deposited on rigid substrates can undergo photo-induced crystallization (PC) even at temperatures (T) well below the glass transition, T{sub g} ∼ 313 K. Substrate-generated shear strain is known to promote the PC process. In the present work, we explore the influence of different substrates (Si and glass), and different film-layer-substrate combinations, on the PC in a variety of a-Se films and film-structures. The intermediate layers (indium tin oxide and polyimide) are chosen to promote conductivity and/or to be a buffer against interface strain in structures of interest for digital imaging applications. The PC characteristics in these samples are evaluated and compared using optical microscopy, atomic-force microscopy, Raman mapping, and T-dependent Raman spectroscopy. Both the presence of a soft intermediate layer, and the thermal softening that occurs for T increasing through T{sub g}, inhibit the tendency for the onset of PC. The extensive PC mapping results in the wide range of samples studied here, as well as the suppression of PC near T{sub g} in this array of samples, strongly support the generality of this behavior. As a consequence, one may expect that the stability of a-Se films against PC can be enhanced by decreasing the rigidity of the film-substrate interface. In this regard, advanced film structures that employ flexible substrates, soft intermediate layers, and/or are designed to be operated near T{sub g} should be explored.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO{sub 2}/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25 nm. The absence of transfer process in this technique avoids any additional degradation, such as wrinkles, tears or folding and residues on the film which are detrimental to device performance. This work provides a wider perspective of CVD-grown h-BN and presents a viable route towards large-scale manufacturing of h-BN substrates and for coating applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Film transfer enabled by nanosheet seed layers on arbitrary sacrificial substrates

An approach for film transfer is demonstrated that makes use of seed layers of nanosheets on arbitrary sacrificial substrates. Epitaxial SrTiO{sub 3}, SrRuO{sub 3}, and BiFeO{sub 3} films were grown on Ca{sub 2}Nb{sub 3}O{sub 10} nanosheet seed layers on phlogopite mica substrates. Cleavage of the mica substrates enabled film transfer to flexible polyethylene terephthalate substrates. Electron backscatter diffraction, X-ray diffraction, and atomic force microscopy confirmed that crystal orientation and film morphology remained intact during transfer. The generic nature of this approach is illustrated by growing films on zinc oxide substrates with a nanosheet seed layer. Film transfer to a flexible substrate was accomplished via acid etching.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Multifunctional epitaxial systems on silicon substrates

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a variety of ferroelectric, multiferroic, magnetic, photocatalytic, and smart materials. Their properties have been extensively investigated and their functionality found to be comparable to films grown on single-crystal oxide substrates previously reported by researchers in this field. In addition, this review explores the utility of using laser processing to introduce stable defects in a controlled way and induce magnetism and engineer the optical and electrical properties of nonmagnetic oxides such as BaTiO{sub 3}, VO{sub 2}, NiO, and TiO{sub 2} as an alternative for incorporating additional magnetic and conducting layers into the structure. These significant materials advancements herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.

36 MATERIALS SCIENCE↗