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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Semiconductor superlattice photodetectors

Technical progress made in the study of superlattice photoconductors is summarized and papers submitted for publication are listed. Since the quantum-well regions may contain several subbands, each of which may be occupied by electrons depending on the doping concentrations, it is important to include the multi-subbands in calculating the impact ionization rate. The electrons occupying the higher subbands require a smaller amount of energy to get out of the quantum well; thus, those higher level subband electrons contribute significantly to the impact ionization rate. The results of the subbands have been calculated. Results concerning the nonparabolicity effect of the band structure, the effect of the quantum-well size, and the effect of the band-edge discontinuity and doping are also summarized.

Chuang, S. L.↗
DOE OSTI2024

Possible coexistence of magnetism and paramagnetic singularity in lightly Fe-doped WTe 2

Topological semimetals possess nodal or nodal-line phases where conduction and valence bands touch at points or lines in momentum space, respectively. Such band touching is symmetry protected and gives rise to exotic and interesting electronic properties. Coupling topological order with magnetism provides a platform for exploring time-reversal (TR) symmetry breaking topological physics, such as axion electrodynamics, inverse spin-galvanic effect, and the quantized anomalous Hall effect. The Weyl semimetal (WSM) requires breaking either TR symmetry or lattice inversion symmetry (I). By doping inversion-symmetry-broken WSM with magnetic dopants, one can expect to create a WSM with both symmetries breaking simultaneously. Here, structural, electrical, and magnetic properties of Fe x ⁢W 1–x Te 2 (x = 0 and 0.011) are reported. It is revealed that, with a small Fe doping concentration (x = 0.011), a ferromagnetism is induced at low temperature (<10 K). Scanning tunneling microscopy and spectroscopy measurements in Fe 0.011 ⁢W 0.989 ⁢Te 2 further reveal only substitution and no intercalated dopants being observed. The probabilities of the Fe substitutions at the two nonequivalent W sites are quantified with equal probability. The dl/dV point spectra indicates that the Fe substitution in WTe 2 manifests itself as electron doping regardless of doping sites. The results clearly reveal the possible coexistence of magnetism and Weyl points in the lightly Fe doped WTe2 at low temperature. Furthermore, this provides an ideal system for further study on the interplay between the topological Weyl points and the TR symmetry breaking.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Defect Engineering of Bi 2 SeO 2 Thermoelectrics

Abstract Bi 2 SeO 2 is a promising n ‐type semiconductor to pair with p ‐type BiCuSeO in a thermoelectric (TE) device. The TE figure of merit zT and, therefore, the device efficiency must be optimized by tuning the carrier concentration. However, electron concentrations in self‐doped n ‐type Bi 2 SeO 2 span several orders of magnitude, even in samples with the same nominal compositions. Such unsystematic variations in the electron concentration have a thermodynamic origin related to the variations in native defect concentrations. In this study, first‐principles calculations are used to show that the selenium vacancy, which is the source of n ‐type conductivity in Bi 2 SeO 2 , varies by 1–2 orders of magnitude depending on the thermodynamic conditions. It is predicted that the electron concentration can be enhanced by synthesizing under more Se‐poor conditions and/or at higher solid‐state reaction temperatures ( T SSR ), which promote the formation of selenium vacancies without introducing extrinsic dopants. The computational predictions are validated through solid‐state synthesis of Bi 2 SeO 2 . More than two orders of magnitude increase are observed in the electron concentration simply by adjusting the synthesis conditions. Additionally, a significant effect of grain boundary scattering on the electron mobility in Bi 2 SeO 2 is revealed, which can also be controlled by adjusting T SSR . By simultaneously optimizing the electron concentration and mobility, a zT of ≈0.2 is achieved at 773 K for self‐doped n ‐type Bi 2 SeO 2 . The study highlights the need for careful control of thermodynamic growth conditions and demonstrates TE performance improvement by varying synthesis parameters according to thermodynamic guidelines.

Novitskii, Andrei [MANA, National Institute for Ma↗
NASA NTRS1973

Recombination luminescence from electron-irradiated Li-diffused Si

Lithium doping has a dramatic effect on the low-temperature photoluminescence of electron-irradiated Si. In oxigen-lean Si with Li doping, a new irradiation-dependent luminescence band between 0.75 and 1.05 eV is observed, which is dominated by a zero-phonon peak at 1.045 eV. This band is believed to be due to radiative transitions involving a Li-modified divacancy. This band is present also in oxygen-rich, Li-diffused Si and is accompanied by bands previously related to the Si-G15(K) center and the divacancy. The intensities of the Li-modified divacancy and Si-G15(K) center bands are relatively weak in the oxygen-rich material, apparently due to the formation of lithium-oxygen complexes which reduce the concentration of unassociated interstitial Li and O.

Johnson, E. S.↗
DOE OSTI2022

Hydrogenated and Carbon-coated Na2Ti6O13 Nanowires as High-Rate Anode Materials for Lithium Ion Batteries

The main disadvantage for sodium titanate as an anode material for LIBs is its low electronic conductivity, resulting in poor rate capability. Several approaches have been taken in an attempt to improve the electronic conductivity of sodium/lithium titanate, such as electronic material coating/mixing, ionic doping, comminution, etc.; but as of yet there has been no uniform carbon coating reported on sodium titanate for LIBs. In this work, we detail a facile technique to create uniform thin carbon coating layers on Na2Ti6O13 nanowires (NTO-C). In addition, we also explored self-doped Ti3+ on carbon coated Na2Ti6O13 nanowires (H-NTO-C) in an effort to further improve its electronic conductivity. The detailed results of the synthesis, characterization, and electrochemical performance of the NTO-based materials (NTO, NTO-C and H-NTO-C) will be presented.

25 ENERGY STORAGE↗
NASA NTRS1993

Reduction of plasma electron density in a gas ionized by an electron beam - Use of a gaseous dielectric

Propagation of an electron beam through a gas creates a secondary electron/ion plasma which can have subsequent deleterious effects on the propagation of the beam. In the case of pulsed electron beams with short micropulse durations, these effects can be greatly reduced through the use of a small doping fraction of an electron attachment gas. We present a model which allows the calculation of the reduction in unbound plasma electron density attainable with a gaseous dielectric dopant. Potential problems with a dopant, including increased ionization, increased scattering, altered refractive index, and dopant saturation and fragmentation, are discussed.

Reid, Max B.↗
DOE OSTI2019

Unexpected Hole Doping of Graphene by Osmium Adatoms

Abstract The electronic transport of monolayer graphene devices is studied before and after in situ deposition of a sub‐monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole‐doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge‐doping efficiency. The charge neutrality point of graphene is found to vary non‐monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.

Elias, Jamie A.↗
DOE OSTI2021

Hole-like Fermi surface in the overdoped non-superconducting Bi 1.8 Pb 0.4 Sr 2 CuO 6+δ

In high-temperature cuprate superconductors, the anti-ferromagnetic spin fluctuations are thought to have a very important role in naturally producing an attractive interaction between the electrons in the d-wave channel. The connection between superconductivity and spin fluctuations is expected to be especially consequential at the overdoped end point of the superconducting dome. In some materials, that point seems to coincide with a Lifshitz transition, where the Fermi surface changes from the hole-like centered at $(\pi, \pi)$ to the electron-like, centered at the Γ point causing a loss of large momentum anti-ferromagnetic fluctuations. In this work, we study the doping dependence of the electronic structure of Bi 1.8 Pb 0.4 Sr 2 CuO$_{6+\delta}$ in angle-resolved photoemission and find that the superconductivity vanishes at lower doping than that at which the Lifshitz transition occurs. This requires a more detailed re-examination of a spin fluctuation scenario.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Bioderived Radical Polymers for Sustainable Energy Storage Materials

Organic mixed ionic and electronic conductors have emerged as promising materials for next-generation energy applications, and a variety of molecular designs have been implemented to push performance to higher levels. Importantly, nonconjugated redox-active radical polymers capable of charge transport offer benefits such as ready synthesis in large quantities and the capability to separate thermomechanical and electrochemical behaviors. This affords more freedom with respect to macromolecular backbone design; thus, the resultant materials properties make this class of polymers appealing alternatives for energy storage. However, these radical polymers often still rely on petrochemically derived polymer backbones. Here, we demonstrate the polymerization of the bioderived terpene β-myrcene and its functionalization by attaching stable radical pendant groups capable of mixed electronic and ionic conduction. The electrochemical enhancement of these materials was substantial as the addition of carbon black and doping of lithium salts electronic conductivities of ~60 S cm -1 were achieved for the composite systems. The addition of the lithium salts proved fruitful as the electric and ionic conductivities of the radical polymers surpassed 10 -4 S cm -1 at elevated temperatures when both lithium hexafluorophosphate and lithium chloride, a more bio and environmentally friendly material, where introduced to the system. Finally, these findings demonstrate a bioderived alternative for an organic mixed conductor serving as both potential cathode and polymer electrolyte for a more sustainable alternative for energy storage applications.

25 ENERGY STORAGE↗
DOE OSTI2023

Tuning counterion chemistry to reduce carrier localization in doped semiconducting carbon nanotube networks

Understanding and controlling the impact that electrostatic interactions have on the transport of injected charge carriers is important for the utilization of pi-conjugated semiconductors in opto-electronic applications. Here, we explore the impact of dopant chemical and electronic structure on the doping efficacy and charge carrier transport in semiconducting single-walled carbon nanotube (s-SWCNT) networks using molecular charge-transfer dopants based on functionalized icosahedral dodecaborane (DDB) clusters. Calculations indicate that localization of electron density on the DDB core reduces the coulombic interactions that contribute to hole localization in the s-SWCNTs, thereby improving charge carrier transport. The enhanced delocalization produces an increase in the electrical conductivity and thermopower at lower charge carrier densities, yielding enhanced thermoelectric transport and a thermoelectric power factor that surpasses the previous best in class for enriched s-SWCNT thin-film networks. This strategy can be applied broadly across pi-conjugated semiconductors to tune and enhance performance in a variety of energy harvesting devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Metallic line defect in wide-bandgap transparent perovskite BaSnO 3

A line defect with metallic characteristics has been found in optically transparent BaSnO 3 perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level–crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO 3 films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Narrowing the band gap and suppressing electron–hole recombination in β-Fe 2 O 3 by chlorine doping

Here, the effects of halogen (F, Cl, Br, I, and At) doping in the direct-band-gap β-Fe 2 O 3 semiconductor on its band structures and electron–hole recombination have been investigated by density functional theory. Doping Br, I, and At in β-Fe 2 O 3 leads to transformation from a direct-band-gap semiconductor to an indirect-band-gap semiconductor because their atomic radii are too large; however, F- and Cl-doped β-Fe 2 O 3 remain as direct-band-gap semiconductors. Due to the deep impurity states of the F dopant, this study focuses on the effects of the Cl dopant on the band structures of β-Fe 2 O 3 . Two impurity levels are introduced when Cl is doped into β-Fe 2 O 3 , which narrows the band gap by approximately 0.3 eV. After doping Cl, the light-absorption edge of β-Fe 2 O 3 redshifts from 650 to 776 nm, indicating that its theoretical solar to hydrogen efficiency for solar water splitting increases from 20.6% to 31.4%. In addition, the effective mass of the holes in halogen-doped β-Fe 2 O 3 becomes significantly larger than that in undoped β-Fe 2 O 3 , which may suppress electron–hole recombination.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2024

Electron mobility of SnO 2 from first principles

The transparent conducting oxide SnO 2 is a wide bandgap semiconductor that is easily n-type doped and widely used in various electronic and optoelectronic applications. Experimental reports of the electron mobility of this material vary widely depending on the growth conditions and doping concentrations. In this work, we calculate the electron mobility of SnO 2 from first principles to examine the temperature and doping concentration dependence and to elucidate the scattering mechanisms that limit transport. We include both electron–phonon scattering and electron-ionized impurity scattering to accurately model scattering in a doped semiconductor. Furthermore, we find a strongly anisotropic mobility that favors transport in the direction parallel to the c-axis. At room temperature and intrinsic carrier concentrations, the low-energy polar-optical phonon modes dominate scattering, while ionized-impurity scattering dominates above 10 18 cm −3 .

36 MATERIALS SCIENCE↗
DOE OSTI2019

Influence of Annealing on Microstructure, Electrochemical, and Magnetic Properties of Co-Doped SrTiO{sub 3} Nanocubes

Effect of annealing on microstructure, electrochemical, and magnetic properties of Co-doped SrTiO{sub 3} nanocubes obtained by the hydrothermal method was studied. X-ray diffraction (XRD) results of all as-prepared and annealed Co-doped SrTiO{sub 3} samples revealed a cubic perovskite structure with the second phases of SrCO{sub 3} and Co{sub 3}O{sub 4}in as-prepared and annealed SrTi{sub 0.90}Co{sub 0.10}O{sub 3} samples, respectively. Agglomerated nanocubes could be clearly observed in all as-prepared and annealed Co-doped samples by scanning electron microscope (SEM) and transmission electron microscope (TEM). X-ray absorption near edge spectroscopy (XANES) results suggested the presence of Co{sup 2+} cations in as-prepared Co-doped SrTiO{sub 3} samples, while both of Co{sup 2+} and Co{sup 3+} cations were found in annealed Co-doped SrTiO{sub 3} samples. The cyclic voltammetry (CV) and galvanostatic charge-discharge (GCD) results of as-prepared and annealed SrTi{sub 1-x}Co{sub x}O{sub 3} (x = 0.05, 0.075 and 0.10) electrodes revealed pseudocapacitor behavior of the Faradaic redox reaction type. The specific capacitance (Csc) was affected by the increase of Co content in all as-prepared and annealed Co-doped SrTiO{sub 3} samples with an excellent cycling stability after 200 cycle test of 97.24% and the highest value of 75.28 F g{sup −1} at 1 A g{sup −1} in an annealed SrTi{sub 0.925}Co{sub 0.075}O{sub 3} electrode. Magnetization measurements at room temperature using vibrating sample magnetometer (VSM) revealed diamagnetic behavior of as-prepared SrTiO{sub 3} sample, whereas paramagnetic behavior was observed in all as-prepared Co-doped SrTiO{sub 3} samples. After annealing, undoped sample exhibited paramagnetic behavior, whereas ferromagnetic behavior was observed in all Co-doped SrTiO{sub 3} samples with the increase of saturation magnetization (M{sub s}) at 10 kOe from 0.58 to 1.63 emu/g and the coercive field (H{sub c}) from 43.71 to 123.87 Oe, suggested to originate from the face-center exchange (FCE) mechanism.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2023

Suppression of Midinfrared Plasma Resonance Due to Quantum Confinement in δ-Doped Silicon

The classical Drude model provides an accurate description of the plasma resonance of three-dimensional materials, but only partially explains two-dimensional systems where quantum mechanical effects dominate such as P:δ layers—atomically thin sheets of phosphorus dopants in silicon that induce electronic properties beyond traditional doping. Previously it was shown that P:δ layers produce a distinct Drude tail feature in ellipsometry measurements. However, the ellipsometric spectra could not be properly fit by modeling the δ layer as a discrete layer of classical Drude metal. In particular, even for large broadening corresponding to extremely short relaxation times, a plasma resonance feature was anticipated but not evident in the experimental data. In this work, we develop a physically accurate description of this system, which reveals a general approach to designing thin films with intentionally suppressed plasma resonances. Our model takes into account the strong charge-density confinement and resulting quantum mechanical description of a P:δ layer. Here, we show that the absence of a plasma resonance feature results from a combination of two factors: (i) the sharply varying charge-density profile due to strong confinement in the direction of growth; and (ii) the effective mass and relaxation time anisotropy due to valley degeneracy. The plasma resonance reappears when the atoms composing the δ layer are allowed to diffuse out from the plane of the layer, destroying its well-confined two-dimensional character that is critical to its distinctive electronic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

P‐Doping Modulated RuIr Nanoparticles Anchored on Co/N/C Catalysts with Improved Alkaline Hydrogen Evolution Activity and Stability

Achieving efficient and stable hydrogen evolution reactions in alkaline conditions is crucial for hydrogen production. In this study, a RuIr/Co (SA) NC-P catalyst featuring RuIr alloys alongside P-doping and CoNx sites is developed. RuIr alloying optimizes the electronic structure between Ru and Ir, promoting electron transfer from Ru to Ir. P-doping further modulates the electronic properties of RuIr alloys, optimizing hydrogen binding energy and weakening Ru─OH binding energy, facilitating rapid H 2 generation and OH ad transfer. Meanwhile, CoNx promotes water dissociation, providing a fast proton delivery path for RuIr alloys. The catalyst exhibits enhanced HER activity with a low overpotential of 20 mV at 10 mA cm −2 , a Tafel slope of 20.4 mV dec −1 , and a turnover frequency of 19.5 H 2 s −1 at 150 mV overpotential. Moreover, catalyst stability is improved 8 times by mitigating RuIr alloy dissolution/agglomeration via P-doping. In conclusion, this work introduces a promising approach for developing efficient and stable HER electrocatalysts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS2005

Silica Aerogels Doped with Ru(II) Tris 1,l0-Phenanthro1ine)-Electron Acceptor Dyads: Improving the Dynamic Range, Sensitivity and Response Time of Sol-Gel Based Oxygen Sensors

Complexes 1 and 2 were characterized in fluid and frozen solution and as dopants of silica aerogels. The intramolecular quenching efficiency of pendant 4-benzoyl-N-methylpyridinium group (4BzPy) is solvent dependent: emission is quenched completely in acetonitrile but not in alcohols. On the other hand, N-benzyl-N'-methylviologen (BzMeV) quenches the emission in all solvents completely. The differences are traced electrochemically to a stronger solvation effect by the alcohol in the case of 1. In fiozen matrices or absorbed on the surfaces of silica aerogel, both 1 and 2 are photoluminescent. The lack of quenching has been traced to the environmental rigidity. When doped aerogels are cooled to 77K, the emission shifts to the blue and its intensity increases in analogy to what is observed with Ru(II) complexes in media undergoing fluid-to-rigid transition. The photoluminescence of 1 and 2 from the aerogel is quenched by oxygen diffusing through the pores. In the presence of oxygen, aerogels doped with 1 can modulate their emission over a wider dynamic range than aerogels doped with 2, and both are more sensitive than aerogels doped with Ru(II) tris(1,l0- phenanthroline). In contrast to frozen solutions, the luminescent moieties in the bulk of aerogels kept at 77K are still accessible, leading to more sensitive platforms for oxygen sensors than other ambient temperature configurations.

Kevebtusm Bucgikas↗
DOE OSTI2023

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO 3 Compounds

New wide band gap semiconductors are needed to increase the power, voltage, and switching frequency limits of power electronic devices. A recent computational search identified a family of ultrawide band gap (4.8-7.8 eV) group-III orthoborates as promising materials for power electronics, assuming n-type doping could be attained. In this report we test this assumption by investigating the defect chemistry and dopability of rhombohedral calcite-structured AlBO 3 , GaBO 3 , and InBO 3 using first-principles calculations. Of the three, we find InBO 3 to have the most potential for n-type doping without significant compensation by native acceptor defects. Furthermore, Zr is predicted to readily substitute for In and behave as a shallow donor with maximal net donor concentrations exceeding 1 x 10 18 cm -3 under growth conditions typical for this class of materials. We also demonstrate thin film growth of InBO3 and measure its absorption onset, which we find to be consistent with theory. Ultimately, our results confirm the promise of InBO 3 as an n-type ultrawide band gap semiconductor and point to alloying with GaBO 3 and AlBO 3 for further optimization of band gap and electron concentration for high-power applications.

36 MATERIALS SCIENCE↗