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At least 397 records · Page 22

Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal

Hetero-epitaxial semiconductor materials comprising cubic crystalline semiconductor alloys grown on the basal plane of trigonal and hexagonal substrates, in which misfit dislocations are reduced by approximate lattice matching of the cubic crystal structure to underlying trigonal or hexagonal substrate structure, enabling the development of alloyed semiconductor layers of greater thickness, resulting in a new class of semiconductor materials and corresponding devices, including improved hetero-bipolar and high-electron mobility transistors, and high-mobility thermoelectric devices.

Park, Yeonjoon↗

Microwave Signatures of Melting/Refreezing Snow: Observations and Modeling Using Dense Medium Radiative Transfer Theory

Microwave brightness temperatures of snow covered terrains can be modeled by means of the Dense Radiative Transfer Medium Theory (DMRT). In a dense medium, such as snow, the assumption of independent scattering is no longer valid and the scattering of correlated scatterers must be considered. In the DMRT, this is done considering a pair distribution function of the particles position. In the electromagnetic model, the snowpack is simulated as a homogeneous layer having effective permittivity and albedo calculated through the DMRT. In order to account for clustering of snow crystals, a model of cohesive particles can be applied, where the cohesion between the particles is described by means of a dimensionless parameters called stickiness (z), representing a measure of the inversion of the attraction of the particles. The lower the z the higher the stickiness. In this study, microwave signatures of melting and refreezing cycles of seasonal snowpacks at high altitudes are studied by means of both experimental and modeling tools. Radiometric data were collected 24 hours per day by the University of Michigan Tower Mounted Radiometer System (TMRS). The brightness temperatures collected by means of the TMRS are simulated by means of a multi-layer electromagnetic model based on the dense medium theory with the inputs to the model derived from the data collected at the snow pits and from the meteorological station. The paper is structured as follows: in the first Section the temperature profiles recorded by the meteorological station and the snow pit data are presented and analyzed; in the second Section, the characteristics of the radiometric system used to collect the brightness temperatures are reported together with the temporal behavior of the recorded brightness temperatures; in the successive Section the multi-layer DMRT-based electromagnetic model is described; in the fourth Section the comparison between modeled and measured brightness temperatures is discussed. We dedicate the last Section to the conclusions and future works.

Tedesco, Marco↗

Si-Ge-metal ternary phase diagram calculations

Solution crystal growth and doping conditions of Si-Ge alloys used for high-temperature thermoelectric generation are determined here. Liquid-phase epitaxy (LPE) has been successfully employed recently to obtain single-crystalline homogeneous layers of Si-Ge solid solutions from a liquid metal solvent. Knowledge of Si-Ge-metallic solvent ternary phase diagrams is essential for further single-crystal growth development. Consequently, a thermodynamic equilibrium model was used to calculate the phase diagrams of the Si-Ge-M systems, including solid solubilities, where M is Al, Ga, In, Sn, Pb, Sb, or Bi. Good agreement between calculated liquidus and solidus data and experimental DTA and microprobe results was obtained. The results are used to compare the suitability of the different systems for crystal growth (by LPE-type process).

Fleurial, J. P.↗

Existence of needle crystals in local models of solidification

The way in which surface tension acts as a singular perturbation to destroy the continuous family of needle-crystal solutions of the steady-state growth equations is analyzed in detail for two local models of solidification. All calculations are performed in the limit of small surface tension or, equivalently, small velocity. The basic mathematical ideas are introduced in connection with a quasilinear, isotropic version of the geometrical model of Brower et al., in which case the continuous family of solutions dissappears completely. The formalism is then applied to a simplified boundary-layer model with an anisotropic kinetic attachment coefficient. In the latter case, the solvability condition for the existence of needle crystals can be satisfied whenever the coefficient of anisotropy is arbitrarily small but nonzero.

Langer, J. S.↗

Determining the Molecular Growth Mechanisms of Protein Crystal Faces by Atomic Force Microscopy

A high resolution atomic force microscopy (AFM) study had shown that the molecular packing on the tetragonal lysozyme (110) face corresponded to only one of two possible packing arrangements, suggesting that growth layers on this face were of bimolecular height. Theoretical analyses of the packing also indicated that growth of this face should proceed by the addition of growth units of at least tetramer size corresponding to the 43 helices in the crystal. In this study an AFM linescan technique was devised to measure the dimensions of individual growth units on protein crystal faces as they were being incorporated into the lattice. Images of individual growth events on the (110) face of tetragonal lysozyme crystals were observed, shown by jump discontinuities in the growth step in the linescan images as shown in the figure. The growth unit dimension in the scanned direction was obtained from these images. A large number of scans in two directions on the (110) face were performed and the distribution of lysozyme growth unit sizes were obtained. A variety of unit sizes corresponding to 43 helices, were shown to participate in the growth process, with the 43 tetramer being the minimum observed size. This technique represents a new application for AFM allowing time resolved studies of molecular process to be carried out.

Nadarajah, Arunan↗

Epitaxial solar cells on low-cost silicon substrates

This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.

Robinson, P. H.↗

Titanium dioxide antireflection coating for silicon solar cells by spray deposition

A high-speed production process is described for depositing a single-layer, quarter-wavelength thick antireflection coating of titanium dioxide on metal-patterned single-crystal silicon solar cells for terrestrial applications. Controlled atomization spraying of an organotitanium solution was selected as the most cost-effective method of film deposition using commercial automated equipment. The optimal composition consists of titanium isopropoxide as the titanium source, n-butyl acetate as the diluent solvent, sec-butanol as the leveling agent, and 2-ethyl-1-hexanol to render the material uniformly depositable. Application of the process to the coating of circular, large-diameter solar cells with either screen-printed silver metallization or with vacuum-evaporated Ti/Pd/Ag metallization showed increases of over 40% in the electrical conversion efficiency. Optical characteristics, corrosion resistance, and several other important properties of the spray-deposited film are reported. Experimental evidence indicates a wide tolerance in the coating thickness upon the overall efficiency of the cell. Considerations pertaining to the optimization of AR coatings in general are discussed, and a comprehensive critical survey of the literature is presented.

Kern, W.↗

Electrohydrodynamic Flows in Electrochemical Systems

Recent studies have established a new class of assembly processes with colloidal suspensions. Particles are driven together to form large crystalline structures in both dc and ac fields. The current work centers on this new class of flows in ac fields. In the research carried out under the current award, it was established that: (i) Small colloidal particles crystallize near an electrode due to electrohydrodynamic flows induced by an sinusoidally varying applied potential. (ii) These flows originate due to disturbances in the electrode polarization layer arising from the presence of the particles. Inasmuch as the charge and the field strength both scale on the applied field, the flows are proportional to the square of the applied voltage. (iii) Suspensions of two different sorts of particles can be crystallized and will form well-ordered binary crystals. (iv) At high frequencies the EHD flows die out. Thus, with a homogeneous system the particles become widely spaced due to dipolar repulsion. With a binary suspension, however, the particles may become attractive due to dipolar attraction arising from differences in electrokinetic dipoles. Consequently binary crystals form at both high and low frequencies.

Saville, D. A.↗

Microstructural and Isotopic Constraints on WL Rim Formation

Coordinated microanalyses of Wark-Lovering (WL) rims are needed to best understand their origin and to decipher their subsequent evolution both in the nebular and parent body settings. Here we present the mineralogy, petrology, microstructures, O isotopic compositions, and Al-Mg systematics of a WL rim on a Type B CAI, ‘‘Big Guy”, from the reduced CV3 chondrite Vigarano [1]. Our SEM and TEM study reveals seven distinct mineral layers in the WL rim that include: (1) gehlenite with rare grossite, (2) hibonite, (3) spinel with minor hibonite and perovskite, (4) zoned melilite (Åk(sub ~0-10)), (5) anorthite, (6) zoned diopside grading outwards from Al,Ti-rich to Al,Tipoor, and (7) forsterite intergrown with diopside. We infer a two-stage history in which WL rim formation was initiated by flash melting and extensive evaporation of the original inclusion edge, followed by subsequent condensation under highly dynamic conditions. The outermost edge of the CAI mantle is mineralogically and texturally distinct compared to the underlying mantle that is composed of coarse, zoned melilite (Åk(sub ~10-60)) grains. The mantle edge contains finegrained gehlenite with hibonite and rare grossite that likely formed by rapid crystallization from a Ca,Al-rich melt produced during a flash vaporization event [2]. These gehlenite and hibonite layers are surrounded by successive layers of spinel, melilite, diopside, and forsterite, indicating their sequential gas-solid reactions onto hibonite. Anorthite occurs as a discontinuous layer that corrodes adjacent melilite and Al-diopside, and appears to have replaced them [3,4], probably even later than the forsterite layer formation. All the WL rim minerals analyzed using the JSC NanoSIMS 50L are 16O-rich (Δ17O ≈ −23‰), indicating their formation in an 16O-rich gas reservoir. Our data are in contrast with many CV CAIs that show heterogeneous Δ 17O values across their WL rims [5]. Our Al-Mg data obtained using the UCLA ims-1290 ion microprobe of the CAI interior and the WL rim define a well-correlated isochron with (26Al/27Al)(sub 0) = 4.94 × 10(exp −5), indicating their synchronous formation ≤5 × 10(exp 4) years after the canonical CAI value. In contrast, no 26Mg excesses are observed in the WL rim anorthite, which suggests its later formation or later isotopic resetting in an 16O-rich gas reservoir, after 26Al had decayed.

Han, J.↗

Magnetism and superconductivity of some Tl-Cu oxides

Many copper oxide based Thallium compounds have now been discovered. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; viz., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are evidenced, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance as high as 125K has been observed. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in the conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) accurate thermal measurement of important parameters such as the sp. heat jump, electronic density of states, D(Ef) and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO, 120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the TlCuO HTSC, but technological aspects are also pointed out.

Datta, Timir↗

Magnetism and superconductivity of some Tl-Cu oxides

Many copper oxide based Thallium compounds are now known. In comparison to the Bi-compounds, the Tl-system shows a richer diversity; i.e., High Temperature Superconductors (HTSC) can be obtained with either one or two Tl-0 layers (m = 1,2); also, the triple-digit phases are easier to synthesize. The value of d, oxygen stoichiometry, is critical to achieving superconductivity. The Tl system is robust to oxygen loss; Tl may be lost or incorporated by diffusion. A diffusion coefficient equal to 10 ms at 900 C was determined. Both ortho-rhombic and tetragonal structures are found, but HTSC behavior is indifferent to the crystal symmetry. This system has the highest T(sub c) confirmed. T(sub c) generally increases with p, the number of CuO layers, but tends to saturate at p = 3. Zero resistance was observed at temperatures as great as 125 K. Most of these HTSC's are hole type, but the Ce-doped specimens may be electronic. The magnetic aspects were studied; because in addition to defining the perfectly diamagnetic ground state as in conventional superconductors, magnetism of the copper oxides show a surprising variety. This is true of both the normal and the superconducting states. Also, due to the large phonon contribution to the specific heat at the high T(sub c) jump, electronic density of states, D(Ef), and coherence length are uncertain, and thus, are estimated from the magnetic results. Results from the Tl-system CuO, LaBaCuO,120 and the Bi-CuO compounds are discussed. The emphasis is on the role of magnetism in the Tl-CuO HTSC, but technological aspects are also pointed out.

Datta, Timir↗

Semiconductor Crystal Growth in Static and Rotating Magnetic fields

Magnetic fields have been applied during the growth of bulk semiconductor crystals to control the convective flow behavior of the melt. A static magnetic field established Lorentz forces which tend to reduce the convective intensity in the melt. At sufficiently high magnetic field strengths, a boundary layer is established ahead of the solid-liquid interface where mass transport is dominated by diffusion. This can have a significant effect on segregation behavior and can eliminate striations in grown crystals resulting from convective instabilities. Experiments on dilute (Ge:Ga) and solid solution (Ge-Si) semiconductor systems show a transition from a completely mixed convective state to a diffusion-controlled state between 0 and 5 Tesla. In HgCdTe, radial segregation approached the diffusion limited regime and the curvature of the solid-liquid interface was reduced by a factor of 3 during growth in magnetic fields in excess of 0.5 Tesla. Convection can also be controlled during growth at reduced gravitational levels. However, the direction of the residual steady-state acceleration vector can compromise this effect if it cannot be controlled. A magnetic field in reduced gravity can suppress disturbances caused by residual transverse accelerations and by random non-steady accelerations. Indeed, a joint program between NASA and the NHMFL resulted in the construction of a prototype spaceflight magnet for crystal growth applications. An alternative to the suppression of convection by static magnetic fields and reduced gravity is the imposition of controlled steady flow generated by rotating magnetic fields (RMF)'s. The potential benefits of an RMF include homogenization of the melt temperature and concentration distribution, and control of the solid-liquid interface shape. Adjusting the strength and frequency of the applied magnetic field allows tailoring of the resultant flow field. A limitation of RMF's is that they introduce deleterious instabilities above a critical magnetic field value. Growth conditions in which static magnetic fields rotational magnetic fields, and reduced gravitational levels can have a beneficial role will be described.

Volz, Martin↗

Determining the Molecular Growth Mechanisms of Protein Crystal faces by Atomic Force Microscopy

A high resolution atomic force microscopy (AFM) study had shown that the molecular packing on the tetragonal lysozyme (110) face corresponded to only one of two possible packing arrangements, suggesting that growth layers on this face were of bimolecular height (Li et al., 1998). Theoretical analyses of the packing had also indicated that growth of this face should proceed by the addition of growth units of at least tetramer size corresponding to the 43 helices in the crystal. In this study an AFM linescan technique was devised to measure the dimensions of individual growth units on protein crystal faces. The growth process of tetragonal lysozyme crystals was slowed down by employing very low supersaturations. As a result images of individual growth events on the (110) face were observed, shown by jump discontinuities in the growth step in the linescan images. The growth unit dimension in the scanned direction was obtained by suitably averaging these images. A large number of scans in two directions on the (110) face were performed and the distribution of lysozyme aggregate sizes were obtained. A variety of growth units, all of which were 43 helical lysozyme aggregates, were shown to participate in the growth process with a 43 tetramer being the minimum observed size. This technique represents a new application for AFM allowing time resolved studies of molecular process to be carried out.

Li, Huayu↗

Reverse Micelle Based Synthesis of Microporous Materials in Microgravity

Formation of zincophosphates from zinc and phosphate containing reverse micelles (water droplets in hexane) has been examined. The frameworks formed resemble that made by conventional hydrothermal synthesis. Dynamics of crystal growth are however quite different, and form the main focus of this study. In particular, the formation of zincophosphate with the sodalite framework was examined in detail. The intramicellar pH was found to have a strong influence on crystal growth. Crystals with a cubic morphology were formed directly from the micelles, without an apparent intermediate amorphous phase over a period of four days by a layer-bylayer growth at the intramicellar pH of 7.6. At a pH of 6.8, an amorphous precipitate rapidly sediments in hours. Sodalite was eventually formed from this settled phase via surface diffusion and reconstruction within four days. With a rotating cell, it was possible to minimize sedimentation and crystals were found to grow epitaxially from the spherical, amorphous particles. Intermediate pH's of 7.2 led to formation of aggregated sodalite crystals prior to settling, again without any indication of an intermediate amorphous phase. These diverse pathways were possible due to changes in intramicellar supersaturation conditions by minor changes in pH. In contrast, conventional syntheses in this pH range all proceeded by similar crystallization pathways through an amorphous gel. This study establishes that synthesis of microporous frameworks is not only possible in reverse micellar systems, but they also allow examination of possible crystallization pathways.

Dutta, Prabir K.↗

Magnetic Field Suppression of Flow in Semiconductor Melt

One of the most promising approaches for the reduction of convection during the crystal growth of conductive melts (semiconductor crystals) is the application of magnetic fields. Current technology allows the experimentation with very intense static fields (up to 80 KGauss) for which nearly convection free results are expected from simple scaling analysis in stabilized systems (vertical Bridgman method with axial magnetic field). However, controversial experimental results were obtained. The computational methods are, therefore, a fundamental tool in the understanding of the phenomena accounting during the solidification of semiconductor materials. Moreover, effects like the bending of the isomagnetic lines, different aspect ratios and misalignments between the direction of the gravity and magnetic field vectors can not be analyzed with analytical methods. The earliest numerical results showed controversial conclusions and are not able to explain the experimental results. Although the generated flows are extremely low, the computational task is a complicated because of the thin boundary layers. That is one of the reasons for the discrepancy in the results that numerical studies reported. Modeling of these magnetically damped crystal growth experiments requires advanced numerical methods. We used, for comparison, three different approaches to obtain the solution of the problem of thermal convection flows: (1) Spectral method in spectral superelement implementation, (2) Finite element method with regularization for boundary layers, (3) Multiquadric method, a novel method with global radial basis functions, that is proven to have exponential convergence. The results obtained by these three methods are presented for a wide region of Rayleigh and Hartman numbers. Comparison and discussion of accuracy, efficiency, reliability and agreement with experimental results will be presented as well.

Fedoseyev, A. I.↗

Deformation of silicates in some Fra Mauro breccias.

The results of the studies conducted show that there is no unequivocal evidence for appreciable static deformation (other than annealing) in the Fra Mauro formation. These rocks probably have been derived from depths to about 10 km. It is suggested that there has been no substantial tectonic activity in the range from the surface to 10 km since these rocks and those of the other Apollo sites crystallized some 3 to 4 billion years ago. This negative conclusion implies that at least the outer layer of the moon has been static for this length of time.

Lallemant, H. G. A.↗

The recombination velocity at III-V compound heterojunctions with applications to Al (x) Ga(1-x)As-GaAs(1-y)Sb(y)

Interface recombination velocity in AlxGa1-xAs-GaAs and A10.85 Ga0.15As-GaAs1-ySby heterojunction systems was studied as a function of lattice mismatch. The results are applied to the design of highly efficient III-V heterojunction solar cells. A horizontal liquid-phase epitaxial growth system was used to prepare p-p-p and p-p-n double heterojunction test samples with specified values of x and y. Samples were grown at each composition, with different GaAs and GaAsSb layer thicknesses. A method was developed to obtain the lattice mismatch and lattice constants in mixed single crystals grown on (100) and (111)B oriented GaAs substrates.

Kim, J. S.↗

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗