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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 397 records · Page 22
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Radiation Effects of Commercial Resistive Random Access Memories

We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

Random Access Memory (RAM)↗
DOE OSTI2018

Simultaneously achieved large reversible elastocaloric and magnetocaloric effects and their coupling in a magnetic shape memory alloy

Large reversible caloric effects covering a broad temperature region are essential for high-efficiency and environment-friendly solid-state caloric refrigeration that can potentially replace the traditional vaporcompression-based cooling technology. Here, we report the simultaneously achieved large reversible magnetocaloric and elastocaloric effects in a Ni 43 Co 6 Mn 40 Sn 11 magnetic shape memory alloy. A reversible near-room-temperature magnetic entropy change Δ S m of as high as 19.3 J kg –1 K –1 under 5 T was experimentally obtained and the corresponding adiabatic temperature change Δ T ad was estimated to be 7.7 K. Meanwhile, a large reversible elastocaloric effect with a directly measured Δ T ad up to 7.1 K was attained. The elastocaloric effect exhibits high cyclic stability with no apparent degradation during 380 cycles of loading and unloading. Furthermore, we propose and demonstrate the utilization of the multicaloric approach under the coupled uniaxial stress and magnetic field to enlarge the refrigeration temperature region of reversible caloric effects. By combining the reversible magnetocaloric and elastocaloric effects and the reversible multicaloric effect under the coupling of uniaxial stress and magnetic field in the hysteresis region, large reversible caloric effects covering a broad temperature region from 257 K to 383 K can be obtained. Finally, this study may pave the way for designing advanced caloric materials with cyclically stable and reversible large caloric effects and wide refrigeration temperature region for solid-state refrigeration.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effect of Ni-Content on the Transformation Temperatures in NiTi-20 at. % Zr High Temperature Shape Memory Alloys

The effect of Ni-content on phase transformation behavior of NiTi-20 at. % Zr high temperature shape memory alloy (HTSMA) is investigated over a small composition range, i.e., 49.8, 50.0 and 50.2 at. % Ni, by differential scanning calorimetry (DSC), high-energy synchrotron radiation X-ray diffraction (SR-XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM). All samples show a monoclinic B19' martensitic structure at room temperature. It is shown that even with these small variations in Ni-content, the alloy shows vastly different transformation temperatures and responds in a drastically different manner to aging treatments at 550 and 600 °C. Lastly, a discussion on H-phase composition with respect to bulk composition is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Stress transfer during different deformation stages in a nano-precipitate-strengthened Ni-Ti shape memory alloy

Understanding the role of fine coherent precipitates in the micromechanical behavior of precipitate-strengthened shape memory alloys (SMAs), which still remains a mystery heretofore, is of crucial importance to the design of advanced SMAs with optimal functional and mechanical properties. Here, we investigate the lattice strain evolution of, and the stress partition between the nanoscale Ni{sub 4}Ti{sub 3} precipitates and the matrix in a precipitate-strengthened Ni-Ti SMA during different deformation stages by in-situ synchrotron high-energy X-ray diffraction technique. We found that, during R-phase reorientation and stress-induced martensitic transformation, which both involve the shear deformation process, the lattice strain of the nanoscale precipitates drastically increases by a magnitude of 0.5%, which corresponds to an abrupt increase of ∼520 MPa in internal stress. This indicates that stress repartition occurs and most of the stress is transferred to the precipitates during the shear deformation of the matrix. It is further revealed that the nanoscale precipitates which only have a low volume fraction bear a considerable amount of applied stress during all deformation stages investigated, implying that the nanoscale precipitates play an important role in the deformation behavior of the precipitate-strengthened Ni-Ti SMAs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thermomechanical behavior and microstructural evolution of a Ni(Pd)-rich Ni 24.3 Ti 49.7 Pd 26 high temperature shape memory alloy

We investigated the effect of thermomechanical cycling on a slightly Ni(Pd)-rich Ni 24.3 Ti 49.7 Pd 26 (near stochiometric Ni–Ti basis with Pd replacing Ni) high temperature shape memory alloy. Furthermore, aged tensile specimens (400 °C/24 h/furnace cooled) were subjected to constant-stress thermal cycling in conjunction with microstructural assessment via in situ neutron diffraction and transmission electron microscopy (TEM), before and after testing. It was shown that in spite of the slightly Ni(Pd)-rich composition and heat treatment used to precipitation harden the alloy, the material exhibited dimensional instabilities with residual strain accumulation reaching 1.5% over 10 thermomechanical cycles. This was attributed to insufficient strengthening of the material (insufficient volume fraction of precipitate phase) to prevent plasticity from occurring concomitant with the martensitic transformation. In situ neutron diffraction revealed the presence of retained martensite while cycling under 300 MPa stress, which was also confirmed by transmission electron microscopy of post-cycled samples. Neutron diffraction analysis of the post-thermally-cycled samples under no-load revealed residual lattice strains in the martensite and austenite phases, remnant texture in the martensite phase, and peak broadening of the austenite phase. The texture we developed in the martensite phase was composed mainly of those martensitic tensile variants observed during thermomechanical cycling. Presence of a high density of dislocations, deformation twins, and retained martensite was revealed in the austenite state via in-situ TEM in the post-cycled material, providing an explanation for the observed peak broadening in the neutron diffraction spectra. Despite the dimensional instabilities, this alloy exhibited a biased transformation strain on the order of 3% and a two-way shape memory effect (TWSME) strain of ~2%, at relatively high actuation temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Field-current phase diagrams of in-plane spin transfer torque memory cells with low effective magnetization storage layers

Field-current phase diagrams were measured on in-plane anisotropy Co{sub 60}Fe{sub 20}B{sub 20} magnetic tunnel junctions to obtain the spin transfer torque (STT) field-current switching window. These measurements were used to characterise junctions with varying free layer thicknesses from 2.5 down to 1.1 nm having a reduced effective demagnetizing field due to the perpendicular magnetic anisotropy at CoFeB/MgO interface. Diagrams were obtained with 100 ns current pulses, of either same or alternating polarity. When consecutive pulses have the same polarity, it is possible to realize the STT switching even for conditions having a low switching probability. This was evidenced in diagrams with consecutive pulses of alternating polarity, with 100% switching obtained at 4.7 MA/cm{sup 2}, compared to the lower 3.4 MA/cm{sup 2} value for same polarity pulses. Although the low level of the current density window is higher in alternating polarity diagrams, the field window in both diagrams is the same and therefore independent of the pulse polarity sequence.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1998

Radiation Effects on Advanced Flash Memories

Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.

Nguyen, D. N.↗
DOE OSTI2024

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Abstract This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads. We conducted an exploration of device fabrication and proposed system-algorithm co-design to boost performance. A novel FeCap device, incorporating an interfacial layer (IL) and$$\text {Hf}_{0.5}\text {Zr}_{0.5}\text {O}_2$$ Hf 0.5 Zr 0.5 O 2 (HZO), ensures a reduction in operating voltage and enhances HZO scaling while being compatible with CMOS circuits. The IL also enriches ferroelectricity and retention properties. When integrated into crossbar arrays, FeCaps and FeFETs demonstrate their effectiveness as IMC components, eliminating sneak paths and enabling selector-less operation, leading to notable improvements in energy efficiency and area utilization. However, it is worth noting that limited capacitance ratios in FeCaps introduced errors in multiply-and-accumulate (MAC) computations. The proposed co-design approach helps in mitigating these errors and achieves high accuracy in classifying the CIFAR-10 dataset, elevating it from a baseline of 10% to 81.7%. FeFETs in crossbars, with a higher on-off ratio, outperform FeCaps, and our proposed charge-based sensing scheme achieved at least an order of magnitude reduction in power consumption, compared to prevalent current-based methods.

Science & Technology - Other Topics↗
NASA NTRS2017

Effect of Radiation and Endurance on Pulsed Programming of Commercial NAND Flash Memory

Independent and coupled effects of radiation and endurance on commercial NAND Flash memory is studied using pulsed programming enabled by interrupting the programming command at the chip-level. The effects of total ionization dose (TID) and endurance stress increase and decrease, respectively, the number of pulses needed to program an entire page. The coupled effect of endurance stress and TID appear to exhibit linear correlation. A neutral electron/ hole trap model is evaluated and correlates well with our results.

Narasimham, Avyaya Jayanthi↗
NASA NTRS2000

Radiation Issues and Applications of Floating Gate Memories

The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.

Scheick, L. Z.↗
DOE OSTI2018

Effects of proton irradiation on the microstructure and shape recovery characteristics of a NiTi alloy

Highlights: • The complex multilayer structure can be induced by irradiation. • Phase constitution with increased fluence evolved as follows: B19’ → (B19’ + B2 + Ti{sub 2}Ni) → (B2 + Ti{sub 2}Ni + TiH{sub 2}). • The transformation temperature decreases remarkablly with the increasing of irradiation fluence. • The strain recovery characteristics deteriorated significantly with the irradiation fluence increasing. - Abstract: Herein, we investigate the effects of proton irradiation on the structure and shape recovery characteristics of a NiTi alloy and provide a mechanistic explanation of the observed phenomena. Detailed analysis revealed that bombardment with 3 MeV protons induced the formation of a complex multilayer structure comprising TiH{sub 2}, Ti{sub 2}Ni, austenite and austenite-martensite layers along the irradiation direction with increasing distance and the origin of the above structure was shown to be closely related to the preferential sputtering effect and irradiation-induced segregation. Finally, the shape recovery characteristics significantly deteriorated with increasing irradiation fluence, since the multilayer structure hindered the martensitic transformation.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measurements of radiation effects on a 4 Mb PSRAM memory

The results of a static test of total ionizing dose (TID) effects on an ISSI 4Mb PSRAM memory are reported in this work. The irradiation was performed at the IEAv’s Laboratory of Ionizing Radiation with 1.17 and 1.32 MeV gamma-rays from a {sup 60}Co source at a dose rate of 2.5 krad/h up to an accumulated dose of 215.7 krad. The TID threshold for bit flip found in this experiment was 52.5 krad. From a sampling of 4096 memory addresses it was estimated a bit flip rate of approximately 50% at an accumulated dose of 215.7 krad.

07 ISOTOPE AND RADIATION SOURCES↗
DOE OSTI2014

Inverse magnetocaloric effect in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys

Inverse magnetocaloric effect is demonstrated in Mn{sub 2}NiGa and Mn{sub 1.75}Ni{sub 1.25}Ga magnetic shape memory alloys. The entropy change at the martensite transition is larger in Mn{sub 1.75}Ni{sub 1.25}Ga, and it increases linearly with magnetic field in both the specimens. Existence of inverse magnetocaloric effect is consistent with the observation that magnetization in the martensite phase is smaller than the austenite phase. Although the Mn content is smaller in Mn{sub 1.75}Ni{sub 1.25}Ga, from neutron diffraction, we show that the origin of inverse magnetocaloric effect is the antiferromagnetic interaction between the Mn atoms occupying inequivalent sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1989

Video-task assessment of learning and memory in Macaques (Macaca mulatta) - Effects of stimulus movement on performance

Effects of stimulus movement on learning, transfer, matching, and short-term memory performance were assessed with 2 monkeys using a video-task paradigm in which the animals responded to computer-generated images by manipulating a joystick. Performance on tests of learning set, transfer index, matching to sample, and delayed matching to sample in the video-task paradigm was comparable to that obtained in previous investigations using the Wisconsin General Testing Apparatus. Additionally, learning, transfer, and matching were reliably and significantly better when the stimuli or discriminanda moved than when the stimuli were stationary. External manipulations such as stimulus movement may increase attention to the demands of a task, which in turn should increase the efficiency of learning. These findings have implications for the investigation of learning in other populations, as well as for the application of the video-task paradigm to comparative study.

Washburn, David A.↗
DOE OSTI2023

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory tiering, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. Using this framework, this study evaluates and compares the impact of a variety of data tiering choices, including how the system prioritizes objects for faster memory as well as the frequency and timing of migration events. The results, collected on a modern Intel platform with conventional DRAM as well as non-volatile RAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared to standard hardware- and software-directed data tiering strategies.

Kammerdiener, Brandon↗