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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1973

Metal-oxide-metal point contact junction detectors

The detection mechanism(s) and design of a mechanically stable metal-oxide-metal point contact junction detector are considered. A prototype for a mechanically stable device has been constructed and tested. A technique has been developed which accurately predicts microwave video detector and heterodyne mixer SIM (semiconductor-insulator-metal) diode performance from low dc frequency volt-ampere curves. The difference in contact potential between the two metals and geometrically induced rectification constitute the detection mechanisms.

Baird, J.↗
NASA NTRS1975

Study of shuttle imaging microwave system antenna. Volume 1: Conceptual design

A detailed preliminary design and complete performance evaluation are presented of an 11-channel large aperture scanning radiometer antenna for the shuttle imaging microwave system (SIMS) program. Provisions for interfacing the antenna with the space shuttle orbiter are presented and discussed. A program plan for hardware development and a rough order of magnitude (ROM) cost are also included. The conceptual design of the antenna is presented. It consists of a four-meter diameter parabolic torus main reflector, which is a graphite/epoxy shell supported by a graphite/epoxy truss. A rotating feed wheel assembly supports six Gregorian subreflectors covering the upper eight frequency channels from 6.6 GHz through 118.7 GHz, and two three-channel prime forms feed assemblies for 0.6, 1.4, and 2.7 GHz. The feed wheel assembly also holds the radiometers and power supplies, and a drive system using a 400 Hz synchronous motor is described. The RF analysis of the antenna is performed using physical optics procedures for both the dual reflector Gregorian concept and the single reflector prime focus concept. A unique aberration correcting feed for 2.7 GHz is analyzed. A structural analysis is also included. The analyses indicate that the antenna will meet system requirements.

Wesley, R. W.↗
NASA NTRS1976

Experiment S-213 selenocentric geodetic reference system

Development and implementation of a photogrammetric system was undertaken to provide accurate selenodetic positions and topographic mapping of all areas overflown by orbital spacecraft. The system was installed in the scientific instrument module (SIM) bay of the Apollo command service module (CSM). In theory, this system provided everything a photogrammetrist could want: the position of each exposure station would be obtained from Earth-based tracking; the orientation of each photograph could be computed from the synchronized stellar exposure and the lock-angles determined by preflight calibration; and the scale of each stereomodel would be obtained directly from the altimeter data. Operationally, the data acquisition was adequate, but less than optimum. Systematic errors are believed to be the result of the primitive orbit determination procedures in use at the time of the Apollo 15 mission, inadequate models of the lunar gravity field, and spacecraft oscillations induced by uncoupled thrusting and various activities of the astronauts.

Doyle, F. J.↗
NASA NTRS1977

Experimental observations of the chemistry of the SiO2/Si interface

Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

Grunthaner, F. J.↗
NASA NTRS1980

Solar energy system performance evaluation: Seasonal report for IBM System 2, Togus, Maine

The solar energy system, SIMS Prototype System 2, was designed to supply domestic hot water to single family residences. The system consists of flat plate collectors, silicone working fluid, storage tanks, pumps, heat exchanger, controls, and associated plumbing. The long term field performance of the installed system was analyzed and the results are described.

Source record↗
NASA NTRS1980

Solar energy system performance evaluation: Seasonal report for IBM system 1A, Huntsville, Alabama

The operational and thermal performance of the solar energy system, Sims Prototype System 1A, is described. The system was designed by IBM to provide 50 to 60 percent of the space heating and domestic hot water preheating load to a 2,000 square foot floor space single family residence in the Huntsville area. The load design temperature inside the building was to be maintained at 70 degrees fahrenheit with auxiliary energy for heating supplied by an electric heat pump assisted by an electric resistance strip heater. In general the disappointing operation of this system is attributed to the manner in which it was used. The system was designed for residential application and used to satisfy the demands of an office environment. The differences were: (1) inside temperature was not maintained at 70 F as expected; and (2) hot water usage was much lower than expected. The conclusion is that the solar energy system must be designed for the type of application in which it is used. Misapplication usually will have an adverse affect on system performance.

Source record↗
NASA NTRS1981

InGaAsP/InP laser development for single-mode, high-data-rate communications

Materials studies as well as general and specific device development were carried out in the InGaAsP system. A comparison was made of three standard methods of evaluating substrate quality by means of dislocation studies. A cause of reduced yield of good wafers, the pullover of melt from one bin to the next, has been analyzed. Difficulties with reproducible zinc acceptor doping have been traced to segregation of zinc in the In/Zn alloy used for the doping source. Using EBIC measurments, the pn junction was shown to drift in location depending on factors not always under control. An analysis of contact structures by SIMS showed that the depth to which the sintered Au/Zn contact penetrates into the structure is typically 0.13 microns, or well within the cap layer and out of the p-type cladding and thus not deleterious to laser prformance. The problem of single-mode laser development was investigated and it was shown to be related to the growth habit over four different possible substrate configurations. The fabrication of constricted double heterojunctions, mesa stripe buried heterostructures, and buried heterostructures was discussed, and measurements were presented on the device properties of single-mode buried heterostructure lasers. Results include single spectral line emission at 3 mW and a threshold current of 60 mA.

Ladany, I.↗
NASA NTRS1983

A surface analytical examination of Stringer particles in Al-Li-Cu alloys

A surface analytical examination of powder metallurgy processed Al-Li-Cu alloys was conducted. The oxide stringer particles often found in these alloys was characterized. Particle characterization is important to more fully understand their impact on the stress corrosion and fracture properties of the alloy. The techniques used were SIMS (Secondary Ion Mass Spectroscopy) and SAM (Scanning Auger Microscopy). The results indicate that the oxide stringer particles contain both Al and Li with relatively high Li content and the Li compounds may be associated with the stringer particles, thereby locally depleting the adjacent matrix of Li solute.

Larson, L. A.↗
NASA NTRS1984

Characterization and measurement of polymer wear

Analytical tools which characterize the polymer wear process are discussed. The devices discussed include: visual observation of polymer wear with SEM, the quantification with surface profilometry and ellipsometry, to study the chemistry with AES, XPS and SIMS, to establish interfacial polymer orientation and accordingly bonding with QUARTIR, polymer state with Raman spectroscopy and stresses that develop in polymer films using a X-ray double crystal camera technique.

Buckley, D. H.↗
NASA NTRS1984

Oxygen diffusion in alpha-Al2O3

Oxygen self diffusion coefficients were determined in single crystal alpha-Al2O3 using the gas exchange technique. The samples were semi-infinite slabs cut from five different boules with varying background impurities. The diffusion direction was parallel to the c-axis. The tracer profiles were determined by two techniques, single spectrum proton activation and secondary ion mass spectrometry. The SIMS proved to be a more useful tool. The determined diffusion coefficients, which were insensitive to impurity levels and oxygen partial pressure, could be described by D = .00151 exp (-572kJ/RT) sq m/s. The insensitivities are discussed in terms of point defect clustering. Two independent models are consistent with the findings, the first considers the clusters as immobile point defect traps which buffer changes in the defect chemistry. The second considers clusters to be mobile and oxygen diffusion to be intrinsic behavior, the mechanism for oxygen transport involving neutral clusters of Schottky quintuplets.

Cawley, J. D.↗
NASA NTRS1984

The relationship of rain-induced cross-polarization discrimination to attenuation for 10 to 30 GHz earth-space radio links

Rain depolarization is quantified through the cross-polarization discrimination (XPD) versus attenuation relationship. Such a relationship is derived by curve fitting to a rigorous theoretical model (the multiple scattering model) to determine the variation of the parameters involved. This simple isolation model (SIM) is compared to data from several earth-space link experiments and to three other models.

Stutzman, W. L.↗
NASA NTRS1984

Analysis techniques for tracer studies of oxidation

Analysis techniques to obtain quantitative diffusion data from tracer concentration profiles were developed. Mass balance ideas were applied to determine the mechanism of oxide growth and to separate the fraction of inward and outward growth of oxide scales. The process of inward oxygen diffusion with exchange was theoretically modelled and the effect of lattice diffusivity, grain boundary diffusivity and grain size on the tracer concentration profile was studied. The development of the tracer concentration profile in a growing oxide scale was simulated. The double oxidation technique was applied to a FeCrAl-Zr alloy using 0-18 as a tracer. SIMS was used to obtain the tracer concentration profile. The formation of lacey oxide on the alloy was discussed. Careful consideration was given to the quality of data required to obtain quantitative information.

Basu, S. N.↗
NASA NTRS1984

Material growth and characterization for solid state devices

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Stefanakos, E. K.↗
NASA NTRS1985

Sixty GHz IMPATT diode development

The objective of this program is to develop 60 GHz GaAs IMPATT Diodes suitable for communications applications. The performance goal of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10 year life time. During the course of the program, double drift (DD) GaAs IMPATT Diodes have been developed resulting in the state of the art performance at V band frequencies. A CW output power of 1.12 W was demonstrated at 51.9 GHz with 9.7 percent efficiency. The best conversion efficiency achieved was 15.3 percent. V band DD GaAs IMPATTs were developed using both small signal and large signal analyses. GaAs wafers of DD flat, DD hybrid, and DD Read profiles using molecular beam epitaxy (MBE) were developed with excellent doping profile control. Wafer evaluation was routinely made by the capacitance versus voltage (C-V) measurement. Ion mass spectrometry (SIMS) analysis was also used for more detailed profile evaluation.

Ma, Y. E.↗
NASA NTRS1984

A surface-analytical examination of stringer particles in aluminum-lithium-copper alloys

A surface analytical examination of powder metallurgy processed Al-Li-Cu alloys was conducted. The oxide stringer particles often found in these alloys are characterized. Particle characterization is important to more fully understand their impact on the stress corrosion and fracture properties of the alloy. The techniques used where SIMS (Secondary Ion Mass Spectroscopy) and SAM (Scanning Auger Microscopy). The results indicate that the oxide stringer particles contain both Al and LI with relatively high Li content and the Li compounds may be associated with the stringer particles, thereby locally depleting the adjacent matrix of Li solute.

Larson, L. A.↗
NASA NTRS1985

Carbon films grown from plasma on III-V semiconductors

Dielectric carbon films were grown on n- and p-type GaAs and InP substrates using plasmas generated at 30 KHz from gaseous hydrocarbons. The effect of gas source, flow rate, and power on film growth were investigated. Methane and n-butane gases were utilized. The flow rate and power ranged from 30 to 50 sccm and 25 to 300 W, respectively. AES measurements show only carbon to be present in the films. The relative Ar ion sputtering rate (3 KeV) of carbon depends on the ratio power/pressure. In addition, the degree of asymmetry associated with the carbon-semiconductor interface is approximately power-independent. SIMS spectra indicate different H-C bonding configurations to be present in the films. Band gaps as high as 3.05 eV are obtained from optical absorption studies.

Pouch, J. J.↗
NASA NTRS1985

Characterization of carbon fibers and fiber-matrix adhesion in composites

The effect of fiber/matrix interactions on the mechanical properties of thermoplastic carbon fiber composites was determined. The experimental approach was a multi-faceted one involving the following areas: characterization of the surface of carbon fibers using X-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS) and scanning transmission electron microcopy (STEM); determination of the functional groups on carbon fiber surfaces using an elemental tagging scheme - derivatization; determination of the polar and dispersion contribution to the surface energy of carbon fibers by measuring wetting forces in a series of liquids having known polar and dispersion components; and study of the interaction of thermoplastic polymers with carbon surfaces by solution adsorption, STEM and fiber critical length.

Wightman, J. P.↗
NASA NTRS1986

Adequacy of surface analytical tools for studying the tribology of ceramics

Surface analytical tools are very beneficial in tribological studies of ceramics. Traditional methods of optical microscopy, XRD, XRF, and SEM should be combined with newer surface sensitive techniques especially AES and XPS. ISS and SIMS can also be useful in providing additional compositon details. Tunneling microscopy and electron energy loss spectroscopy are less known techniques that may also prove useful.

Sliney, H. E.↗