Search NASA⌕ Search

SEARCH · Search NASA

Results for “Capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Optimizing protic ionic liquid electrolyte for pre-intercalated Ti 3 C 2 T x MXene supercapacitor electrodes

Electrical double-layer capacitors (EDLCs) are of increasing importance in energy storage from renewable sources. The properties of the electrode and electrolyte materials influence the energy and power densities of EDLCs. We examined the specific capacitance and ion dynamics of a protic ionic liquid confined in pre-intercalated Ti 3 C 2 T x MXene. Our electrochemical measurements demonstrated that the creation of a protic ionic liquid, 1-butyl-3-H-imidazolium bis(trifluoromethanesulfonyl)imide (BuIMH-NTf2), using a mixture of ionic liquid, 1-butyl imidazole (BuIM), and salt, bis(trifluoromethanesulfonyl)imide (HNTf2), in a ratio of 0.8:0.2 led to the optimal capacitance. Remarkably, quasi-elastic neutron scattering measurements revealed increased particle mobility at this composition, attributed to the more efficient accumulation of BuIMH + on the electrode surface. This deposit of additional ions results in fewer BuIM molecules away from the surface, enhancing their mobility due to reduced crowding. This composition-dependent electrochemical behavior will guide the formulation of more efficient protic ionic liquid systems, enabling faster ion transport in energy storage devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗
DOE OSTI2025

A sensing material-free and simple readout MEMS sensor for detecting Helium

Abstract In this work, we report a method that enables a standard electrostatic MEMS device to perform complex sensing functionalities, such as detecting the presence of helium without a sensing material or a conditioning circuit. Helium is a noble, odorless, non-reactive gas that is very challenging to detect. It is used in critical applications such as storing nuclear fuel waste inside a dry cask. In these applications, its leakage from the dry cask may indicate the cask's safe operation's degradation. A departure from the common practice of exciting the MEMS around its mechanical resonance, the method is based on exciting the MEMS around its electrical resonance circuit. This method shows that the tiny difference between the air dielectric constant (1.00059) and helium (1.000067) corresponding to only a few Femtofarad level capacitances produces a 25 mV difference without a conditioning circuit. Simulation results confirmed those findings and explored the sensor response at different operation conditions. This method eliminates the need for a heated microstructure and the need for absorption material. This method is not limited to gas sensing. It can be applied to other sensing mechanisms, such as acceleration and pressure measurements, and eliminate the complex circuit to read small capacitance in these applications.

Mohaidat, Sulaiman↗
DOE OSTI2025

Optical characterization of deep-level defects in n-type Al x In y Ga 1- x - y P for the development of solid-state photomultiplier analogs

Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and minimizing the incorporation of fresh defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep-level optical spectroscopy, steady-state photocapacitance, and illuminated capacitance-voltage, on photodiodes with lightly n-type Al x In y Ga 1−x−y P absorber regions. Several deep levels are identified, including one near the midgap. Although the inclusion of aluminum increases each trap density by approximately 10×, the hole capture cross-section also appears to decrease, suggesting that Shockley–Read–Hall dark currents may be suppressed. These materials may be good candidates for the development into silicon photomultiplier analogs with a wider bandgap for scintillator applications.

III–V↗
DOE OSTI2024

Magnetization dynamics driven by displacement currents across a magnetic tunnel junction

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of a frequency-dependent capacitive current effect in Co Fe B / Mg O -based MTJs and its influence on magnetization dynamics using a time-resolved magneto-optical Kerr effect technique. In our device, operating at gigahertz frequencies, we find a large displacement current of the order of mA, which does not break the tunnel barrier of the MTJ. Importantly, this current generates an Oersted field and spin-orbit torque, inducing magnetization dynamics. Our discovery holds promise for building robust MTJ devices operating under high current conditions, also highlighting the significance of capacitive impedance in high-frequency magnetotransport techniques. Published by the American Physical Society 2024

Safeer, C. K. (ORCID:0000000323969730)↗
DOE OSTI2024

First Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and its Scalability for High-Density 3D Ferroelectric Capacitor Memory

In this article, we perform a comprehensive experimental and modeling study into the scaling of vertical 2T-nC ferroelectric random-access memory (FeRAM) hybrid cell to demonstrate a high performance and high-density 3D capacitor memory. We demonstrate: i) first time successful integration of the vertical 2T-3C FeRAM cell by stacking the vertical metal-ferroelectricmetal (MFM) stack on top of Si CMOS transistors; ii) successful experimental operation of the memory cell, including the quasi-nondestructive read out (QNRO) of the polarization without write back after 106 read cycles; iii) the write bit line (WBL) heavily screens the coupling between neighboring strings, making it a minor concern; V ) aggressive stacking of the WBLs, i.e., number of MFMs in a string, could facilitate the self-boosting during write operation due to ferroelectric linear capacitance (CFE), which allows self-boosted inhibition for Vw/2 scheme and worsens the Vw/3 scheme as disturb increases to intolerable 2Vw/3; v) aggressive horizontal scaling significantly increases the read disturb to cells on neighboring planes due to capacitance between two WBLs (Cz).

42 ENGINEERING↗
DOE OSTI2025

Pyrolyzer Assisted Vapor Transport Deposition of Antimony-Doped Cadmium Telluride

In this study, we developed a new method for in situ Sb doping of CdTe thin films combining vapor transport deposition with a Group V pyrolyzer to address Sb doping concentration and doping efficiency. The Sb doped CdSeTe (CdSeTe:Sb) films were deposited in solar cell structures under variations of Sb dopant source heater, vapor pyrolyzer temperature, and Cd vapor excess. Results indicate that although these parameters do not affect the CdTe morphology or crystal structure, they critically influence doping efficiency and trap concentration. Capacitance-voltage measurements show that a higher dopant heater (TD) or pyrolyzer (TP) temperature leads to higher net carrier concentration, achieving a net carrier concentration of 1016 cm-3 and 20% doping efficiency with a TD/TP combination of 600 degrees C/1100 degrees C. By tuning the Cd/Sb flux ratio during CdSeTe:Sb deposition, the lowest defect concentration is achieved at Cd/Sb of 1.4:1, which produced the best VOC CdSeTe:Sb cell. This demonstrates a path to produce high net carrier concentration polycrystalline CdTe thin film with a low concentration of dopant-induced defects.

14 SOLAR ENERGY↗
DOE OSTI2024

Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films

Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2026

Wafer-scale high-k SrTiO 3 dielectrics with rational barrier-layer design for low leakage and high charge density

High-k oxides such as SrTiO 3 promise large capacitance, but their dielectric response is often limited by leakage currents due to reduced bandgaps. We show that introducing a thin barrier layer beneath SrTiO 3 is a simple and effective way to suppress leakage and increase charge density. Using hybrid molecular beam epitaxy, we grew uniform SrTiO 3 films on Nb:SrTiO 3 , CaSnO 3 /Nb:SrTiO 3 , and 2-in. SiO 2 /p-Si stacks to directly compare how different barrier layers influence device behavior. Both CaSnO 3 and SiO 2 reduce leakage, but the ultra-wide-bandgap SiO 2 layer enables much higher operating voltages, yielding charge densities exceeding 5 × 10 13 cm −2 at room temperature—more than a fivefold enhancement compared to devices without a barrier layer. This improvement comes with a predictable trade-off: the lower dielectric constant of SiO 2 reduces overall capacitance, making its thickness an important design parameter. Together, these results demonstrate that rational barrier-layer engineering—including wafer-scale integration on Si—provides a clear pathway to achieving higher charge densities in SrTiO 3 -based dielectric devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

A Unidirectional Two-Compartment Neuron Circuit with On-chip STDP learning

Most neuromorphic chips implement the single-compartment point neuron model where synapse circuits connect directly to a leaky integrate and fire (LIF) soma circuit. However, when using a biologically plausible soma circuit (e.g., Hodgkin-Huxley neuron model), an interface circuitry, such as a current conveyor circuit, is needed to transmit synaptic current to the soma circuit. This is especially true for ultra-low power neuron circuits, where membrane capacitance is on the order of 20 fF. This need for an interface circuit arises because the parasitic capacitance and leakage current caused by fabrication mismatch and second-order effects of the output transistors in the synapse circuits can disturb the spiking dynamics of the soma circuit if connected without an interface. Using an interface circuit to isolate the soma’s membrane capacitor from synapses resolves this issue. We propose to use a unidirectional resistor (a transconductance circuit) to connect the synapse and soma circuits instead of conventional current conveyor circuits. Using a biologically plausible spike pattern detection model, we show that the on-chip spike-timing-dependent plasticity (STDP) learning performance of the proposed unidirectional two-compartment neuron circuit is similar to a single-compartment circuit (with a current conveyor as an interface) and additionally, it is more power-efficient and biologically plausible. The chip is fabricated in the Taiwan Semiconductor Manufacturing Company (TSMC) 250 nm technology node and comprises a single neuron circuit.

Gautam, Ashish [ORNL]↗
DOE OSTI2024

HPE ultralit project (ARPA-E open program 2018) final report 15

The goal of the program was to build a fully integrated optical transceiver with >1 Tb/s and <1.5 pJ/bit operating at 50 ◦ C. Optical transceivers are critical components in high-performance-computers (HPC) and data centers, and the details of their implementation has a big impact on the total power consumption (energy efficiency) of an HPC system. Our proposed transceiver used three key enabling technologies. Firstly, SiGe avalanche photodetectors have record-low sensitivities, meaning that they can reach low bit error rates with very little light input. As a result, we can drive our lasers at a lower drive current, thus saving electrical power. Secondly, we use MOS-based capacitive tuning in our deinterleaver, modulator, and demultiplexer. Capacitive tuning allows for the tuning of photonic elements with zero static power consumption. Thirdly, we use quantum dots as the gain material in our light source. This allows us to efficiently use our light source at temperatures that are typically encountered in an HPCsystem. Our proposed optical transceiver consisted of a quantum dot comb laser as a light source, a booster SOA, MOS-based deinterleavers, MOS based ring modulators, MOS-based ring demultiplexers, and SiGe APDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Upcycling Polyethylene Waste to Advanced Carbon Materials for Energy Storage Applications

Polyethylene is notoriously difficult to upcycle because it decomposes into light gases at approximately 350-400 °C which prevents processing it at higher temperatures to convert it into high-value carbon materials, such as graphene or graphite. We address this challenge by using an air-based, thermo-oxidation process, which heats polyethylene (PE) just below the decomposition point to initiate oxidation and cross-linking of PE alkyl chains. These molecular transformations allow PE to be further graphenized or graphitized at higher temperatures without decomposing. The PE-derived graphene has a specific surface area up to 1,800 m 2/g and Raman ID/IG ratio of 0.85, which enables it to be used as an electrode material for a symmetric supercapacitor with the 1 M H2SO4 electrolyte. The PE-derived graphene material has a comparable electrochemical capacitive performance, such as power density, specific capacitance, and long cycle stability, to the commercial state of art porous carbon electrode. The stabilized PE could also be converted into highly crystalline flake graphite via low-temperature catalytic graphitization. The PE-derived graphite is used for the lithium-ion battery anode, which showed comparable electrochemical battery performance, such as reversible rate performance and long-term cyclic stability, to the current use battery-grade graphite, thus providing a scalable method to upcycle PE plastic waste into high-value carbon material.

Gao, Yuan↗
DOE OSTI2026

Dielectric Spectroscopy Cable NDE for Unequal Aging Over Different Lengths

This Pacific Northwest National Laboratory milestone report assesses the effect of unequal aging over different lengths of cable on dielectric spectroscopy (DS) bulk impedance measurements from the cable end. DS measurements can indicate the remaining useful life of cables; however, most benchmark tests are based on accelerated aging of the entire cable. If only a portion of the cable is exposed to a harsh environment (as is frequently the case), the DS measurement will indicate a significantly less-aged cable than if the entire cable were exposed to a uniform environmental stress. The DS measurement is primarily related to the intrinsic insulation material relative permittivity—typically between 1.5 and 3.0. Insulation aging increases permittivity and, correspondingly, the cable’s overall capacitance measured from the cable end. To judge the health of the overall cable system, operators are primarily interested in the condition of the most severely aged section since that is where a failure is most likely to occur. This can be expressed as the dimensionless relative permittivity of the severely aged section divided by the permittivity of a pristine cable. This relative permittivity is an intrinsic material parameter independent of cable length and can serve as a quantitative indication of the insulation condition. If the relative percentages of cable exposed to a harsh and benign environment are known, the DS measurement of the entire cable length, including both pristine and aged sections, can be compensated to predict the relative permittivity (relative to pristine permittivity) of the most severly aged segment. A test was performed on three 50 ft (16 m) cables with 10%, 50%, and 90% of the cable inside a thermal aging oven. Predictably, the aging effect on the DS response was greatest in the 90% sample, followed by the 50% sample, and then the 10% sample. The more interesting result is the ratio of the aged insulation permittivity to the pristine insulation permittivity. Based on prior work, an end-of-life cable has a value of approximately 1.35. If the relative percentages of pristine and severely aged cable lengths are known, and the total cable-length capacitance of the initial pristine cable and the combined pristine plus aged cable are known, the relative aged permittivity (ratio of aged section permittivity / pristine section permittivity) can be estimated. The relative cable lengths exposed to a harsh environment may be known or estimated based on plant layout drawings or cable reflectometry tests that can locate the oven entry and exit points. The compensation was verified using a lumped-parameter model to predict the aged-segment permittivity e2/e1, where e2 is the aged-segment permittivity and e1 is the pristine-segment permittivity. For all three percentages of aged cable lengths, the ratio was quite similar, as would be expected since all cable segments were exposed to the same aging environment. This ratio of aged permittivity to pristine permittivity can be compared to other damage indicating tests, including elongation at break, to assess cable condition.

ARENA Test Bed↗
NASA NTRS1965

Thin-film resistors used in functional electronic blocks

Vapor-deposited thin-film resistors replace diffused resistors in R-C tank circuits in a solid state electronic block. This allows an optimum parallel capacitance to be obtained for circuit applications requiring a high resistance and a low capacitance.

Source record↗
NASA NTRS1970

Constant-amplitude RC oscillator

Sinusoidal oscillator has a frequency determined by resistance-capacitance /RC/ values of two charge control devices and a constant-amplitude voltage independent of frequency and RC values. RC elements provide either voltage-control, resistance-control, or capacitance-control of the frequency.

Kerwin, W. J.↗
NASA NTRS1972

Method for measuring static Young's modulus of tungsten to 1900 K

An instrument system was developed and tested to measure static Young's modulus of elasticity of refractory metals in tension at temperatures to 1900 K. The extensometer uses capacitance displacement sensors for measuring total elongation of a specimen and incorporates a unique high-resolution remote zero-adjusting mechanism. Details of a method for calibrating capacitance displacement sensors at temperatures to 800 K are included. The system was built to adapt to a vacuum furnace on a tensile machine and was tested on unalloyed tungsten rod specimens. The test results show that the system can measure the modulus of tungsten to 1900 K to within a precision of + or - 5 percent. The uncertainty of the measurement is estimated to be of the same order as the precision.

Harrigill, W. T., Jr.↗
NASA NTRS1972

Design, processing, and testing of lsi arrays for space station

The design of a MOS 256-bit Random Access Memory (RAM) is discussed. Technological achievements comprise computer simulations that accurately predict performance; aluminum-gate COS/MOS devices including a 256-bit RAM with current sensing; and a silicon-gate process that is being used in the construction of a 256-bit RAM with voltage sensing. The Si-gate process increases speed by reducing the overlap capacitance between gate and source-drain, thus reducing the crossover capacitance and allowing shorter interconnections. The design of a Si-gate RAM, which is pin-for-pin compatible with an RCA bulk silicon COS/MOS memory (type TA 5974), is discussed in full. The Integrated Circuit Tester (ICT) is limited to dc evaluation, but the diagnostics and data collecting are under computer control. The Silicon-on-Sapphire Memory Evaluator (SOS-ME, previously called SOS Memory Exerciser) measures power supply drain and performs a minimum number of tests to establish operation of the memory devices. The Macrodata MD-100 is a microprogrammable tester which has capabilities of extensive testing at speeds up to 5 MHz. Beam-lead technology was successfully integrated with SOS technology to make a simple device with beam leads. This device and the scribing are discussed.

Lile, W. R.↗
NASA NTRS1972

Optical interferometry study of film formation in lubrication of sliding and/or rolling contacts

Seventeen fluids of widely varying physical properties and molecular structure were chosen for study. Film thickness and traction were measured simultaneously in point contacts by interferometry, from which a new theory of traction was proposed. Film thickness was measured in line contacts by interferometry and electrical capacitance to establish correlation between these two methods. An interferometric method for the absolute determination of refractive index in the contact zone was developed and applied to point contact fluid entrapments. Electrical capacitance was used to study the thickness and properties of the soft surface film which sometimes forms near a metal-fluid interface.

Stejskal, E. O.↗