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Band structures are calculated for HgTe, CdTe, and ZnTe. A near band-edge approximation to the coherent potential approximation is used to compute the alloy band-gap variation and electron and hole effective masses in HgZnTe and HgCdTe. Both diagonal and off-diagonal disorder are included. The consequences for hole mobility are found to be significant if anion disorder is present because of a valence-band offset.
The results of photoemission studies of core level shifts in the Hg(1-x)Cd(x)Te, Cd(1-x)Mn(x)Te, and Hg(1-x)Zn(x)Te alloys are discussed. In Hg(0.7)Cd(0.3)Te, the Hg 5d level is found to shift to lower binding energy by 0.1 eV, and the Cd 4d level to shift to higher binding energy by 0.25 eV upon alloying (relative to their binaries). The Born-Haber cycle is used to determine core level binding energies relative to the valence-band maximum in the context of tight-binding theory, and calculated core level shifts upon alloying in HgCdTe are shown to be too small to account for the observed values. A natural valence-band offset between HgTe and CdTe of 0.35 eV is found.
An evaluation is made of the development status of materials processing techniques in microgravity environments; the classes of materials treated to date encompass glasses, ceramics, crystals, semiconductors, metals and their alloys, polymers, composites, and such biological substances as pharmaceuticals. Attention is given to the commercial development of composite and mixed-phase materials with substantially improved properties as a result of microgravity processing, as well as to current research into catalysts and Type II-VI semiconductor crystals such as CdTe.
The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.
Epitaxial structure of three semiconductor materials - silicon, gallium arsenide, and cadmium telluride - makes possible integrated monolithic focal-plane arrays of photodectors. Silicon layer contains charge-coupled devices, gallium arsenide layer contains other fast electronic circuitry, and cadmium telluride layer serves as base for array of mercury cadmium telluride infrared sensors. Technique effectively combines two well-established techniques; metalorganic chemical-vapor deposition (MOCVD) and molecular-beam epitaxy (MBE). Multilayer structure includes HgCdTe light sensors with Si readout devices and GaAs signal-processing circuits. CdTe layer provides base for building up HgCdTe layer.
Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.
The second year of operation of the Center for Commercial Crystal Growth in Space is described. This center is a consortium of businesses, universities and national laboratories. The primary goal of the Center's research is the development of commercial crystal growth in space. A secondary goal is to develop scientific understanding and technology which will improve commercial crystal growth on earth. In order to achieve these goals the Center's research is organized into teams by growth technique; melt growth, solution growth, and vapor growth. The melt growth team is working on solidification and characterization of bulk crystals of gallium arsenide and cadmium telluride. They used high resolution X-ray topography performed at the National Synchrotron Light Source at Brookhaven National Laboratory. Streak-like features were found in the diffraction images of semi-insulating undoped LEC GaAs. These were shown to be (110) antiphase boundaries, which have not been reported before but appear to be pervasive and responsible for features seen via less-sensitive characterization methods. The results on CdTe were not as definitive, but indicate that antiphase boundaries may also be responsible for the double peaks often seen in X-ray rocking curves of this material. A liquid encapsulated melt zone system for GaAs has been assembled and techniques for casting feed rods developed. It was found that scratching the inside of the quartz ampoules with silicon carbide abrasive minimized sticking of the GaAs to the quartz. Twelve floating zone experiments were done.
Transport processes in the vertical Bridgman growth of Hg(1-x)Cd(x)Te were investigated by numerical analysis of an idealized quasi-steady-state model of this system. The analysis was specifically directed at an explanation for the radial and axial segregation data obtained by Szofran and Lehoczky (1984) and Szofran et al. (1984) on this system, who reported, respectively, on the observations of diffusion-controlled axial segregation and on the presence of large compositional nonuniformities of CdTe across the radius of the crystal. It is shown that the data sets of these groups can be explained by the results of a detailed analysis of heat transfer, convection, and species transport which account for thermosolutal convection in the melt and for heat transfer mechanisms that dominate the HgCdTe alloy. Predictions from this analysis is applicable to the growth of other materials, because they suggest conditions for the growth of radially uniform crystals with nearly constant axial composition profiles.
The development of a set of multi-channel dichroics which includes a 6 channel dichroic operating over the wavelength region from 0.3 to 52 microns is described. In order to achieve the optimum performance, the optical constraints of PbTe, Ge, and CdTe coatings in the strongly absorptive region have been determined by use of a new iterative method using normal incidence reflectance measurement of the multilayer together with initial values of energy gap and infinite refractive index for the semiconductor model. The design and manufacture of the dichroics is discussed and the final results are presented.
A CdTe phase modulator and low power RF sources have been used with Pb-salt tunable diode lasers operating near 8 microns to generate optical sidebands for high sensitivity absorption spectroscopy. Sweep averaged, first-derivative sample spectra of CH4 were acquired by wideband phase sensitive detection of the electrooptically (EO) generated carrier-sideband beat signal. EO generated beat signals were also used to frequency lock the TDL to spectral lines. This eliminates low frequency diode jitter, and avoids the excess laser linewidth broadening that accompanies TDL current modulation frequency locking methods.
The University of Reading experiment exposed IR interference filters and crystal substrates on identical earth facing and leading-edge sites of the Long Duration Exposure Facility (LDEF). Filters mostly comprised multilayer coatings of lead telluride (PbTe)/II-IV on germanium (Ge) and other substrates: crystals comprised CdTe, MgF2, sapphire, quartz, silicon, and some softer materials. Identical control samples were maintained in the laboratory throughout the experiment. The filters were novel in their design, construction and manufacture, and categorized high-performance because of their ability to resolve emission spectra of the important atmospheric gases for various purposes in remote sensing. No significant changes were found in the spectra of the hard-coated filters or in the harder crystals (the softer materials were degraded to an extent). By virtue of this well-documented and long exposure in LDEF, the qualification of the filter type is significantly improved for its future requirements.
The removal energies of constituent atoms from various unreconstructed semiconductor surfaces are calculated using a Green function method. An efficient difference-equation approach within the second-neighbor tight-binding model is employed. For a compound AB, binding energies for the A and B atoms on the (111), (-1 -1 -1), (100), and (110) surfaces are calculated. Analyses are made of the energy to remove an atom from the nearly full surface and from the nearly empty surface. Results are presented for Si, GaAs, CdTe, and HgTe; and the surface sublimation energies are found to depend on surface coverage and do not display a simple linear relationship to the number of bonds broken, as is often assumed in modeling growth by MBE.
The development of two 256 by 256 hybrid HgCdTe focal plane array (FPA) families is described, and their performance is discussed. The hybrid FPAs employ a PV HgCdTe detector array and custom Si CMOS readouts. The PACE-1 process was used to fabricate the detectors, whereby the liquid phase epitaxial growth of HgCdTe occurs on sapphire substrates buffered by a layer of CdTe. The performance characteristics of the detector arrays are given. A tactical 256 by 256 CMOS readout is tested, in which a high functional yield was achieved. Updated test results are given for a 256 by 256 readout circuit developed for use in an orbital replacement instrument for the Hubble Space Telescope. The characterizations of several MWIR and SWIR FPAs were thorough and shown to be reliable. The pixel yield, maximum FPA responsivity nonuniformity, and SWIR FPA read noise for the tests are given. The high contrast and insignificant fixed pattern noise of the imagery from the MWIR 256 by 256 FPA are emphasized. These qualities were obtained when the device was operating at 80 k and utilizing f/2 optics with an 8-in. focal length and a 4.4 micron high pass filter.
Hg(0.80)Cd(0.20)Te crystals were grown vertically in a transverse magnetic field by directional solidification. The effect of a magnetic field on the nature of fluid flow in the melts was investigated by measuring compositional variations along the axial and radial directions of the grown ingots. Magnetic field effects were shown to be significant over the entire field range employed (i.e., 2 to 5 kG). The axial compositional profiles (determined by precision density measurements) showed an abrupt decrease in the mole fraction of CdTe when the field was applied. Radial compositional mapping by IR transmission and X-ray energy dispersion spectrometry indicated that the solid-liquid interface evolved through three stages when the field was applied (i.e., from a radially symmetric concave interface to an off-center concave shape when the field was initially applied, then to a tilted plane, and, finally, to an off-center concave interface). The axial compositional profile of an Hg(0.84)Zn(0.16)Te ingot showed similar field effects.
From 1980 through 1991 approximately 500 materials processing experiments were performed aboard the space stations Salyut 6, Salyut 7 and Mir. This includes work on catalysts, polymers, metals and alloys, optical materials, superconductors, electronic crystals, thin film semiconductors, super ionic crystals, ceramics, and protein crystals. Often the resulting materials were surprisingly superior to those prepared on earth. The Soviets were the first to fabricate a laser (CdS) from a crystal grown in space, the first to grow a heterostructure in space, the first super ionic crystal in space, the first crystals of CdTe and its alloys, the first zeolite crystals, the first protein crystals, the first chromium disilicide glass, etc. The results were used to optimize terrestrial materials processing operations in Soviet industry. The characteristics of these three space stations are reviewed, along with the advantages of a space station for materials research, and the problems encountered by the materials scientists who used them. For example, the stations and the materials processing equipment were designed without significant input from the scientific community that would be using them. It is pointed out that successful results have been achieved also by materials processing at high gravity in large centrifuges. This research is also continuing around the world, including at Clarkson University. It is recommended that experiments be conducted in centrifuges in space, in order to investigate the acceleration regime between earth's gravity and the microgravity achieved in orbiting space stations. One cannot expect to understand the influence of gravity on materials processing from only two data points, earth's gravity and microgravity. One must also understand the influence of fluctuations in acceleration on board space stations, the so-called 'g-jitter.' This paper is presented in outline and graphical form.
Numerical calculations of the electronic properties of liquid II-VI semiconductors, particularly CdTe and ZnTe were performed. The measured conductivity of these liquid alloys were modeled by assuming that the dominant temperature effect is the increase in the number of dangling bonds with increasing temperature. For low to moderate values of electron correlation, the calculated conductivity as a function of dangling bond concentration closely follows the measured conductivity as a function of temperature. Both the temperature dependence of the chemical potential and the thermal smearing in region of the Fermi surface have a large effect on calculated values of conductivity.
The paper discusses the design, the performance, and on-orbit operations of the Crystal Growth Furnace (CGF) system flown for the first time aboard the Orbiter Columbia on STS-50. Four experiments were carried out: (1) crystal growth of (Hg,Zn)Te by chemical vapor transport, (2) seeded Bridgman growth of Zn-doped CdTe, (3) Bridgman growth of Se-doped GaAs, and (4) crystal growth of (Hg,Zn)Te by directional solidification. The results of a system performance data analysis demonstrate that all the elements of the CGF system functioned flawlessly. Seven out of eight samples carried on board yielded the best possible science return to date, surpassing previous microgravity material processing experiments in space.
We have fabricated a variety of micro-optic components including Fresnel and non-Frensel lenses, off-axis and dispersive lenses with binary stepped contours, and analog contours. Process details for all lens designs fabricated are given including multistep photolithography for binary fabrication and grayscale mask photolithography for analog fabrication. Reactive ion etching and ion beam milling are described for the binary fabrication process, while ion beam milling was used for the analog fabrication process. Examples of micro-optic components fabricated in both Si and CdTe substrates are given.