Search NASA⌕ Search

SEARCH · Search NASA

Results for “FERROMAGNETIC MATERIALS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Magnetic properties of Fe doped SmCrO{sub 3} perovskite

The compound SmCr{sub 1−x} Fe{sub x}O{sub 3} perovskites were prepared by citric acid route. the samples were characterized by XRD and SEM. The temperature and field dependent magnetization measurements were carried out in the temperature range of 5K −400 K at 0.01T field and −5T to 5T field at 2K. SmCrO3 compound has shown two magnetic transition temperatures at 197 K and 38 K. The observed behavior at 197 K is the characteristic of anti-ferromagnetic ordering of Cr{sup 3+} moments with weak ferromagnetism. The drop in magnetization below 38 K is due to the spin reorientation of Sm{sup 3+} in anti ferromagnetic arrangement and Cr{sup 3+}spins. the doping of Fe in SmCrO{sub 3} compound has shown a decrease in T{sub N1} and also the two magnetization reversals at 177K and 57K. The magnetic behavior at low temperatures is (T<T{sub N1}) explained in the context of competition among moments of rare earth (Sm) and transition metal ion(Cr/Fe). The existence of the two magnetization reversals offers the characteristic switching of magnetization without changing the direction of the applied magnetic field.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Robust ferromagnetism in Mn-doped MoS{sub 2} nanostructures

Layered transition metal dichalcogenides (TMDs) have attracted extensive attention due to their interesting properties originating from an effective honeycomb lattice and strong spin-orbit coupling, and have potential applications in catalysis, lithium batteries, photonic, electronic, and valleytronic devices. Introducing magnetism in the TMDs can lead to the interesting functionalities such as magnetic order and carrier spin polarization with potential applications in spintronics. Here, we demonstrate an effective approach to induce robust ferromagnetism in MoS{sub 2} nanostructures by transition metal doping. After doping with a few percent Mn{sup 2+}, the magnetism of MoS{sub 2} nanostructures is enhanced dramatically. Moreover, the magnetic properties are strongly temperature dependent, which is clearly different from the behavior of defect-induced magnetism. Our approach opens up the possibility for tuning the spin and magnetic properties in two-dimensional nanostructures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Tunable Magnetic Interaction of Mn-Doped MoS{sub 2}/SiC van der Waals Heterostructures Under Normal Strain

The magnetic properties of Mn-doped MoS{sub 2}/SiC van der Waals (vdW) heterostructures under the influence of normal strain have been investigated by the first-principles method. The interlayer interaction between (Mo,Mn)S{sub 2} and (Si,Mn)C monolayers is antiferromagnetic (AFM) at the equilibrium state. Our results reveal that the compressive strain has much influence on the interlayer interaction of the vdW heterostructures and the interlayer interaction switched from AFM to ferromagnetic (FM). By contrast, under a tensile strain, the interlayer interaction between (Mo,Mn)S{sub 2} and (Si,Mn)C monolayers is always AFM. The results show that the interaction between (Mo,Mn)S{sub 2} and (Si,Mn)C monolayers changes from AFM to FM, which could be explained by the superexchange and the p − d exchange, respectively Moreover, according to the magnetic anisotropy energy (MAE), the easy axis of the magnetization is parallel to the a-axis in current vdW heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Strain-Induced Tunable Magnetic Interaction in (Mo,Co)S{sub 2}/(Si,Co)C Heterostructure

Using the first-principles method, we reported tunable magnetic interaction in Co-doped MoS{sub 2}/SiC van der Waals (vdW) heterostructures under normal strain. The interlayer interaction between (Mo,Co)S{sub 2} and (Si,Co)C monolayers is antiferromagnetic (AFM) at the equilibrium state. Our results reveal that the compressive strain has much influence on the interlayer interaction of the vdW heterostructures and the interlayer interaction switched from AFM to ferromagnetic (FM). By contrast, under a tensile strain, the interlayer interaction between (Mo,Co)S{sub 2} and (Si,Co)C monolayers is always AFM. The results show that the interaction between (Mo,Co)S{sub 2} and (Si,Co)C monolayers changes from AFM to FM, which could be explained by the superexchange and the p − d exchange, respectively. Moreover, according to the magnetic anisotropy energy (MAE), the easy axis of the magnetization is parallel to the a-axis in current vdW heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Optimization of excess Bi doping to enhance ferroic orders of spin casted BiFeO{sub 3} thin film

Multiferroic Bismuth Ferrite (BiFeO{sub 3}) thin films with varying excess bismuth (Bi) concentration were grown by chemical solution deposition technique. Room temperature multiferroic properties (ferromagnetism, ferroelectricity, and piezoelectricity) of the deposited BiFeO{sub 3} thin films have been studied. High resolution X-ray diffraction and Raman spectroscopy studies reveal that the dominant phases formed in the prepared samples change continuously from a mixture of BiFeO{sub 3} and Fe{sub 2}O{sub 3} to pure BiFeO{sub 3} phase and, subsequently, to a mixture of BiFeO{sub 3} and Bi{sub 2}O{sub 3} with increase in the concentration of excess Bi from 0% to 15%. BiFeO{sub 3} thin films having low content (0% and 2%) of excess Bi showed the traces of ferromagnetic phase (γ-Fe{sub 2}O{sub 3}). Deterioration in ferroic properties of BiFeO{sub 3} thin films is also observed when prepared with higher content (15%) of excess Bi. Single-phased BiFeO{sub 3} thin film prepared with 5% excess Bi concentration exhibited the soft ferromagnetic hysteresis loops and ferroelectric characteristics with remnant polarization 4.2 μC/cm{sup 2} and saturation magnetization 11.66 emu/g. The switching of fine spontaneous domains with applied dc bias has been observed using piezoresponse force microscopy in BiFeO{sub 3} thin films having 5% excess Bi. The results are important to identify optimum excess Bi concentration needed for the formation of single phase BiFeO{sub 3} thin films exhibiting the improved multiferroic properties.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural, magnetic and optical properties of a dilute magnetic semiconductor based on Ce{sub 1−x}Co{sub x}O{sub 2} thin film grown on LaAlO{sub 3}

Highlights: • Co doped CeO{sub 2} was grown on LaAlO{sub 3} (0 0 1) via a modified sol–gel spin-coating technique. • The concentration of the Co ions was varied from 1 to 15 at.%. • The incorporation of 5 at.% of Mn ions was found to provide formation of exceptionally magnetic moment. • This amount demonstrated a giant magnetic moment of 1.09 μ{sub B}/Co. • This amount reduced the optical band gap and enhanced the optical performance. - Abstract: The enhancement of the room temperature ferromagnetism and optical properties of the dilute magnetic metal oxides is a crucial clue to construct spin-based optoelectronic devices. In this work, Ce{sub 1−x}Co{sub x}O{sub 2} (0.01 ≤ x ≤0.15) thin films were prepared via ethylene glycol modified sol–gel spin coating technique on the LaAlO{sub 3} (0 0 1) substrate to enhance their room temperature ferromagnetism and optical properties. The structures, magnetic and optical properties of the prepared films were characterized by X-ray diffraction, atomic force microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, SQUID magnetometer, X-ray photoelectron spectroscopy and UV–vis spectrophotometer. The results demonstrated that a single phase cubic structure was formed, implying the substitution of Co ions into the Ce ions sites. The prepared films showed room temperature ferromagnetism with saturation magnetic moment of 1.09 μ{sub B}/Co was achieved for 5 at.% Co-doped CeO{sub 2}. This film exhibited high optical transparency of 85% and low optical band energy gap of 3.39 eV. The improved magnetic and optical properties are argued to the increase of the density of the oxygen vacancies into the cerium oxide crystal structure due to the incorporation of Co ions.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Magnetoelectric polymer nanocomposite for flexible electronics

This paper reports the fabrication and characterization of a new type of magnetoelectric polymer nanocomposite that exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of high aspect ratio ferromagnetic iron nanowires embedded inside a ferroelectric co-polymer poly(vinylindene fluoride-trifluoroethylene), P(VDF-TrFE). The nanocomposite has been fabricated via a simple low temperature spin coating technique. Structural, ferromagnetic, ferroelectric, and magnetoelectric properties of the developed nanocomposite have been characterized. The nanocomposite films showed isotropic magnetic properties due to the random orientation of the iron nanowires inside the film. In addition, the embedded nanowires did not hinder the ferroelectric phase development of the nanocomposite. The developed nanocomposite showed a high magnetoelectric coupling response of 156 mV/cmOe measured at 3.1 kOe DC bias field. This value is among the highest reported magnetoelectric coupling in two phase particulate polymer nanocomposites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Switchable orbital polarization and magnetization in strained LaCo O 3 films

Strain engineering of epitaxial heterostructures offers opportunities to control the orbital degree of freedom by lifting the degeneracy of e g states. In this work, we show that the orbital occupation in LaCoO 3 (LCO) films can be switched between two degenerate e g bands with epitaxial strain. The orbital polarization of nearly -100% (or 100%) is controlled by depleting occupation of the d x2-y2 (or d( 3z2-r2 ) orbital entirely in LCO for large compressive (or moderate tensile) strain. The change of electronic configuration associated with the spin-state transition modulates the magnetization of strained LCO films. Under compressive strain, LCO films exhibit a small magnetization without long-range ferromagnetic ordering. With tensile-strain increases, the magnetization of LCO films increases and reaches the maximum value when the bonding angle (Co-O-Co) is close to 180° and the in-plane bond length (Co-O) is unstretched. Our results highlight the role of octahedral distortion and spin-state crossover in tailoring the magnetic properties of cobaltite thin films, indicating an attractive route to deliberately control the orbital polarization that can be tuned to maximize the functionality of oxide heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Structural, magnetic and phonon properties of Cr(III)-doped perovskite metal formate framework [(CH{sub 3}){sub 2}NH{sub 2}][Mn(HCOO){sub 3}]

We have incorporated Cr(III) into [(CH{sub 3}){sub 2}NH{sub 2}][Mn(HCOO){sub 3}] (DMMn) multiferroic metal organic framework (MOF). The highest concentration of Cr(III) in the synthesized samples reached 15.9 mol%. The obtained samples were characterized by powder and single-crystal X-ray diffraction, DSC, magnetic susceptibility, dielectric, EPR, Raman and IR methods. These methods and the performed chemical analysis revealed that electrical charge neutrality after substitution of Cr(III) for Mn(II) is maintained by partial replacement of dimethylammonium (DMA{sup +}) cations by neutral HCOOH molecules. These changes in the chemical composition are responsible for weakening of the hydrogen bonds and decreased flexibility of the framework. This in turn leads to lowering of the ferroelectric phase transition temperature, observed around 185 K for undoped DMMn and around 155 K for the sample containing 3.1 mol% of Cr(III), and lack of macroscopic phase transition for the samples with Cr(III) content of 8.2 and 15.9 mol %. Another interesting effect observed for the studied samples is pronounced strengthening of the weak ferromagnetism of in Cr(III)-doped samples, associated with slight decrease of the ferromagnetic ordering temperature from 8.5 K for DMMn to 7.0 K for the sample with 15.9 mol % Cr(III) content. - Graphical abstract: Incorporation of Cr(III) into [(CH3)2NH2[Mn(HCOO)3] framework increases the magnetization. - Highlights: • Chromium(III) substitutes for Mn(II) in the studied MOF. • Charge neutrality is maintained by replacing DMA{sup +} cations by neutral HCOOH molecules. • Compounds with 8.2 and 15.9% of Cr(III) show no phase transition above 100 K. • Doping with Cr(III) increases magnetization.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Effect of Fe Doping and Point Defects (V{sub O} and V{sub Sn}) on the Magnetic Properties of SnO{sub 2}

We investigated the effects of Fe doping and point defects (oxygen and tin vacancies, V{sub O} and V{sub Sn}, respectively) on the ferromagnetism of SnO{sub 2} through first-principles calculations by using generalized gradient approximation + U under density functional theory. Calculation results show that Fe-doped SnO{sub 2} with V{sub O} or V{sub Sn} exhibit long-range ordered ferromagnetism and Curie temperature above room temperature. The system has different magnetic properties with different doping modes, which are beneficial to the magnetic adjustment of dilute magnetic semiconductor (DMS). The double-exchange effects among the electrons of O–2p and Fe–3d states are the origin of ferromagnetism in Sn{sub 15}FeO{sub 31}. Similarly, ferromagnetism in Sn{sub 14}FeO{sub 32} is derived from the double-exchange effects among the electrons of O–2p and Fe–3d states. These effects are produced by hole carriers after complexes form by Fe doping and V{sub O} or V{sub Sn}. Simultaneously, Sn{sub 14}FeO{sub 32} shows a half-metallic behavior, thus resulting in 100% conduction hole polarizability, which is highly beneficial to DMSs as a hole-injection source. Moreover, results also show that the decreased distance between Fe and vacancies (V{sub O} or V{sub Sn}) lowers formation energy and thus increases the system stability.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Surface spins enhanced magnetoelectric coefficient and impedance spectroscopy of BaFe{sub 0.01}Ti{sub 0.99}O{sub 3} and BaFe{sub 0.015}Ti{sub 0.985}O{sub 3} nanorods

Highlights: • Multiferroic Fe-doped BaTiO{sub 3} nanorods. • Sol–gel. • Magnetoelectric coefficient. • Transmission electron microscopy. • Cole–Cole plots. - Abstract: Multiferroic BaFe{sub 0.01}Ti{sub 0.99}O{sub 3} (BFT1) and BaFe{sub 0.015}Ti{sub 0.985}O{sub 3} (BFT15) nanorods were prepared by a sol–gel synthesis and annealed at 700 °C/2 h. The tetragonal phase and nano dimensions of BFT samples are identified by X-ray diffraction and transmission electron microscopy. The enhancement in ferroelectricity depends upon low porosity, tetragonal phase, space charge field, larger surface area and oriented growth. The ferromagnetism depends upon partially filled inner shells, surface spins and oxygen vacancies. The magnetoelectric coefficient is explained on the basis of surface spins, short-range interactions near surface boundary, compressive stress and twin structure contributed by nano grains which can reside stress near grain boundaries. The frequency dependent real (Z′) and imaginary (Z″) parts of impedance spectra are confirmed by the variations that observed in dielectric properties. The values of resistance of grain boundaries, R{sub gb} is higher than grains, R{sub g} indicating that the effect of grain boundaries is dominant in BFT nanorods.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Ferromagnetism and topological surface states of manganese doped Bi{sub 2}Te{sub 3}: Insights from density-functional calculations

Based on first-principles calculations, the electronic, magnetic, and topological characters of manganese (Mn) doped topological insulator Bi{sub 2}Te{sub 3} were investigated. The Mn substitutionally doped Bi{sub 2}Te{sub 3}, where Mn atoms tend to be uniformly distributed, was shown to be p-type ferromagnetic, arising from hole-mediated Ruderman-Kittel-Kasuya-Yosida interaction. Mn doping leads to an intrinsic band splitting at Γ point, which is substantially different from that of nonmagnetic dopant. The topological surface state of Bi{sub 2}Te{sub 3} is indeed gapped by Mn doping; however, the bulk conductance limits the appearance of an insulating state. Moreover, the n-type doping behavior of Bi{sub 2}Te{sub 3} is derived from Mn entering into the van der Waals gap of Bi{sub 2}Te{sub 3}.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Structural, Optical, Magnetic, and Dielectric Properties of Cr{sup 3+} Substituted Cobalt Aluminate Nanoparticles

The present study investigates the influence of Cr{sup 3+} substitution on structural, optical, dielectric, and magnetic properties of cobalt aluminates in the aluminates series CoAl{sub 2-x}Cr{sub x}O{sub 4}, 0.00 ≤ x ≤ 0.20. These series of nanoparticles are effectively synthesized using the co-precipitation method. The cubic spinel aluminate structure is confirmed by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopic measurements. Transmission electron microscopy (TEM) analysis shows the formation of spherical nanoparticles, which are homogeneous in shape and size. The optical properties of the prepared samples have been investigated by means of optical absorbance spectra. The optical band gap E{sub opt}{sup i} and Urbach energy E{sub u} are estimated. At room temperature, the magnetization of undoped CoAl{sub 2}O{sub 4} reveals a weak ferromagnetic behavior. This ferromagnetism is increased for the sample with x = 0.05, and the samples with higher Cr{sup 3+} content have a tendency to be superparamagnetic on account of the formation of single-domain particles as a consequence of small particle size. Real part of dielectric constant (ε{sup ′}), dielectric loss (tanδ), ac conductivity (σ{sub ac}), real part of impedance (Z{sup ′}), and imaginary part of impedance (Z{sup ″}) are analyzed as a function of frequency and Cr{sup 3+} content. The results show that the dielectric loss (tanδ), dielectric permittivity (ε{sup ′}), and ac conductivity (σ{sub ac}) decrease with the increase in Cr{sup 3+} content, x = 0.05, and then increase with a further increase in Cr{sup 3+} content. The increase in these parameters has been explained on the basis of the hopping mechanism. From the Cole–Cole diagram, the value of the relaxation time τ can be calculated and it has been found to increase with increasing the Cr{sup 3+} content. Actually, a high dielectric constant makes these materials good for energy storage at high frequencies.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Electric-field-controlled interface strain coupling and non-volatile resistance switching of La{sub 1-x}Ba{sub x}MnO₃ thin films epitaxially grown on relaxor-based ferroelectric single crystals

We have fabricated magnetoelectric heterostructures by growing ferromagnetic La{sub 1-x}Ba{sub x}MnO₃ (x=0.2, 0.4) thin films on (001)-, (110)-, and (111)-oriented 0.31Pb(In{sub 1/2}Nb{sub 1/2})O₃-0.35Pb(Mg{sub 1/3}Nb{sub 1/2})O₃-0.34PbTiO₃ (PINT) ferroelectric single-crystal substrates. Upon poling along the [001], [110], or [111] crystal direction, the electric-field-induced non-180° domain switching gives rise to a decrease in the resistance and an enhancement of the metal-to-insulator transition temperature T C of the films. By taking advantage of the 180° ferroelectric domain switching, we identify that such changes in the resistance and T C are caused by domain switching-induced strain but not domain switching-induced accumulation or depletion of charge carriers at the interface. Further, we found that the domain switching-induced strain effects can be efficiently controlled by a magnetic field, mediated by the electronic phase separation. Moreover, we determined the evolution of the strength of the electronic phase separation against temperature and magnetic field by recording the strain-tunability of the resistance [(ΔR/R){sub strain}] under magnetic fields. Additionally, opposing effects of domain switching-induced strain on ferromagnetism above and below 197 K for the La₀.₈Ba₀.₂MnO₃ film and 150 K for the La₀.₆Ba₀.₄MnO₃ film, respectively, were observed and explained by the magnetoelastic effect through adjusting the magnetic anisotropy. Finally, using the reversible ferroelastic domain switching of the PINT, we realized non-volatile resistance switching of the films at room temperature, implying potential applications of the magnetoelectric heterostructure in non-volatile memory devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Temperature-dependent structure of Tb-doped magnetite nanoparticles

High quality 5 nm cubic Tb-doped magnetite nanoparticles have been synthesized by a wet-chemical method to investigate tailoring of magnetic properties for imaging and biomedical applications. We show that the Tb is incorporated into the octahedral 3+ sites. High-angle annular dark-field microscopy shows that the dopant is well-distributed throughout the particle, and x-ray diffraction measurements show a small lattice parameter shift with the inclusion of a rare-earth dopant. Magnetization and x-ray magnetic circular dichroism data indicate that the Tb spins are unpolarized and weakly coupled to the iron spin lattice at room temperature, and begin to polarize and couple to the iron oxide lattice at temperatures below 50 K. Broadband ferromagnetic resonance measurements show no increase in magnetic damping at room temperature for Tb-doped nanoparticles relative to undoped nanoparticles, further confirming weak coupling between Fe and Tb spins at room temperature. The Gilbert damping constant, α, is remarkably low for the Tb-doped nanoparticles, with α = 0.024 ± 0.003. These nanoparticles, which have a large fixed moment, a large fluctuating moment and optically active rare-earth elements, are potential high-relaxivity T1 and T2 MRI agents with integrated optical signatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Signature of Ferromagnetic Phase at Low Temperature in Low-Doped La{sub 0.88}Ca{sub 0.12}MnO{sub 3} Single Crystal

The confirmation of ferromagnetism at low temperature in a low-doped manganites system is always debatable. It is for the first time, electrical, magnetic, and thermal properties have been measured for manganites single crystal of La{sub 0.88}Ca{sub 0.12}MnO{sub 3} by using a floating-zone method. The electrical resistivity shows a perceptible change of resistance at a low temperature which can be viewed as a signature of the ferromagnetic phase. The ferromagnetic phase of the investigated La{sub 0.88}Ca{sub 0.12}MnO{sub 3} single crystal with Curie temperature of T{sub C} = 120 K which is in closed agreement with ac-susceptibility measurement. An analysis of the specific heat suggests the transition peak (T{sub P}) coincides with the T{sub C} and attains 1.2 J mol{sup −1} K at 116 K. The magnetoresistance (MR) and temperature coefficient of resistance (TCR) were found to be 69% and 10% respectively, which expands its subtle potential for applications in spintronics and thermistor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Magnetic modification at sub-surface of FeRh bulk by energetic ion beam irradiation

Ferromagnetic layered structure has been made at sub-surface of the antiferromagnetic FeRh bulk samples by high energy He ion beam irradiation. In accordance with the Transport of Ions in Matter simulation, such ion beam can effectively deposit the elastic collision energy in several μm regions in the depth from the surface. Measurement with a superconducting quantum interference device reveals the irradiated samples to be ferromagnetic. Assuming that only the part the energy deposited can be modified to be ferromagnetic, the corresponding irradiation induced magnetization is consistent with the data that we previously reported. On the other hand, the X-ray magnetic circular dichroism (XMCD) spectra for the irradiated samples are totally unchanged as those for the unirradiated samples. Since XMCD signal in total emission yield method is considered to be surface sensitive with a typical probing depth of several nm, the surface magnetic state is maintained to be antiferromagnetic. By utilizing these phenomena, three-dimensional magnetic patterning of FeRh can be realized, which may potentially be used for future magnetic exchange device application such as nano-scale sensors and memories.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Interface-induced superconductivity in magnetic topological insulators

The interface between two different materials can show unexpected quantum phenomena. Here, in this study, we used molecular beam epitaxy to synthesize heterostructures formed by stacking together two magnetic materials, a ferromagnetic topological insulator (TI) and an antiferromagnetic iron chalcogenide (FeTe). We observed emergent interface-induced superconductivity in these heterostructures and demonstrated the co-occurrence of superconductivity, ferromagnetism, and topological band structure in the magnetic TI layer—the three essential ingredients of chiral topological superconductivity (TSC). The unusual coexistence of ferromagnetism and superconductivity is accompanied by a high upper critical magnetic field that exceeds the Pauli paramagnetic limit for conventional superconductors at low temperatures. These magnetic TI/FeTe heterostructures with robust superconductivity and atomically sharp interfaces provide an ideal wafer-scale platform for the exploration of chiral TSC and Majorana physics.

36 MATERIALS SCIENCE↗