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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23

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NASA NTRS1977

On the launch vehicle payload interface response

A method has been developed by which an estimate of the launch vehicle/payload interface response is derived from the interface responses obtained from missions with the identical launch vehicle but different payloads. This method requires knowledge of the launch vehicle eigenvalues, interface modal displacements, and the dynamic characteristics of the payloads. No other launch vehicle information is required. The organization responsible for the payload is able to perform loads and responses analysis resulting from a payload change without interfacing with the launch vehicle organization.

Chen, J. C.↗

NASA NTRS1977

Experimental observations of the chemistry of the SiO2/Si interface

Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

Grunthaner, F. J.↗

NASA NTRS1978

Stratigraphic correlation of the radar-detected subsurface interface in Mare Crisium

The delineation of spectrally distinct units in Mare Crisium allows a more complete interpretation of the single subsurface interface detected by the Apollo lunar sounder experiment. This interface is approximately 1400 m below the surface in the central mare region of Crisium, and 1000 m below the surface in the eastern bench region. Based on the power of the returned signal, and the small difference in dielectric constant of returned lunar basalts, it is probable that this interface represents a buried regolith between two major basin-filling episodes. The contact between spectral Units 1 and 2 is the most likely cause for the radar-reflecting interface. Based on this model, the thickness of Unit 3 is 400 m in the eartern part of the mare, and that of Unit 2 is 1000 m. Estimates of the original depth/diameter relations of Pierce are consistent with excavation of an older basalt from below a depth of 1400 m.

Maxwell, T. A.↗

NASA NTRS1978

Spacelab payload accommodation handbook. Appendix B: Structure interface definition module

The mechanical interfaces between Spacelab and its payload are defined. The envelopes available for mounting payload hardware are specified together with the standard structural attachment interfaces. Overall load capabilities and the local load capabilities for individual attachment interfaces are defined for the standard mounting locations. The mechanical environment is defined and the mechanical interfaces between the payload and the EPDS, CDMS and ECS are included.

Source record↗

NASA NTRS1979

Effects of isothermal and cyclic exposures on interface structure and mechanical properties of FPalpha-Al2O3/aluminum composites

The microstructural and interface stability of FPalpha-Al203/Al-Li composites are investigated as a function of isothermal exposure at 500 C or thermal cycling between 140 and 500 C with hold time at Tmax. Interfacial morphology, growth kinetics, crystal structure, and composition of interfacial reaction products are characterized. Strength is monitored in the transverse orientation, and fracture mechanics is analyzed in terms of interface reaction products. The interfacial reaction product in FP/Al is Li2O.5Al2O3. Significant fiber-matrix reaction occurs during fabrication. The number of thermal cycles rather than total time at Tmax is the determining factor in strength degradation, thermal cycling giving rise to voids at the fiber-matrix interface. Extensive interface failures occur at composite fracture stresses below about 128 MPa; above this stress level failure is attributed to ductile matrix fracture.

Kim, W. M.↗

NASA NTRS1979

An analysis of interface crack in adhesively bonded lap shear joints

This paper presents an analytical study of interface crack problems in adhesively bonded lap shear joints. A convenient and accurate method of analysis is developed on the basis of conservation laws in elasticity and of the fundamental relationships in fracture mechanics of interface crack problems. The problem is eventually reduced to a system of linear algebraic equations of mixed-mode stress intensity factor solutions. One of the salient features of the present approach is that the interface crack-tip stress intensity solutions can be determined accurately and directly by the information extracted from the far field. Solutions of the interface crack problems in lap shear joints have been obtained for the cases of various adhesive/adherend material systems and geometric configurations of the crack and the joint. Of particular interest is the evaluation of the mixed-mode stress intensity factors and the associated energy release rates. They are determined explicitly to illustrate the fundamental nature of the joint fracture problem.

Wang, S. S.↗

NASA NTRS1980

XPS study of the chemical structure of the nickel/silicon interface

The chemical nature of the Ni/Si, Ni/Ni2Si, and Si/Ni2Si interfaces is studied using X-ray photoelectron spectroscopy. Two approaches are employed: (1) the Ni/silicide and Si/silicide interfaces are examined by dynamically monitoring the advancing reaction front during in situ growth and (2) as-deposited Ni/Si interfacial properties are analyzed by sequential evaporating monolayer Ni films on Si. These experiments show that the Ni/Ni2Si interface consists of a Ni-rich silicide phase, while the Si/Ni2Si interface has a transitional region that is correspondingly Si-rich silicide.

Grunthaner, P. J.↗

NASA NTRS1980

The Spacelab Experiment Interface Device (SEID)

The Spacelab experiment interface device (SEID) is described which simulates the electrical, and logical connections of the Spacelab remote acquisition unit (RAU), the interface functions of the Spacelab experiment computer software, and the electrical aspects of the high rate multiplexer. Simulated RAU interfaces include PCM serial channels (up to four), user time clock (UTC), flexible inputs (up to 128) and discrete outputs (up to 64). Connectors are logically compatible with the rau. be instructed to execute sequences of input/output commands to the RAU, similar to those performed during flight. This approximation of the experiment computer software is adequate to detect interface problems and prevent these from occurring during Spacelab payload integration. The SEID hardware is a microprocessor based system, utilizing an 8085 microprocessor with 6K of PROM and 4K of static RAM. The basic unit is augmented with an LSI-11 microcomputer to provide disk storage and a more dynamic environment for generation of control data. A simulation of the general monitoring loop is provided to emulate Spacelab system timing.

Kallus, R.↗

NASA NTRS1980

Optical mass memory system (AMM-13). AMM/DBMS interface control document

The baseline for external interfaces of a 10 to the 13th power bit, optical archival mass memory system (AMM-13) is established. The types of interfaces addressed include data transfer; AMM-13, Data Base Management System, NASA End-to-End Data System computer interconnect; data/control input and output interfaces; test input data source; file management; and facilities interface.

Bailey, G. A.↗

NASA NTRS1981

Bi-directional communication interface for microprocessor-to-system/370

The design and operation of a bi-directional communication interface between a microcomputer and the IBM System/370 is documented. The hardware unit interconnects a modem to interface to the S/370, the microcomputer with an EIA I/O port, and a terminal for sending and receiving data from either the microcomputer or the S/370. Also described is the software necessary for the two-way interface. This interface is designed so that no modifications need to be made to the terminal, modem, or microcomputer.

Fischer, J. P.↗

NASA NTRS1982

Bi-directional communication interface for microprocessor-to-system/370

The design and operation of a bi-directional communication interface between a microcomputer and the IBM System/370 is documented. The hardware unit inter-connects a modem to interface to the S/370, the microcomputer with an EIA I/O port, and a terminal for sending and receiving data from either the microcomputer of the S/370. The software necessary for the two-way interface is also described. This interface was designed so that no modifications need to be made to the terminal, modem or microcomputer.

Fischer, J. P.↗

NASA NTRS1981

Interface extinction and subsurface peaking of the radiation pattern of a line source

The radiation pattern of a line source lying along the plane interface of two dielectric half-spaces is calculated. It is found that the pattern at the interface has a null (interface extinction); that the pattern in the upper half-space, whose index of refraction is taken to be less than that of the lower half-space, has a single lobe with a maximum normal to the interface; and that the pattern in the lower half-space (subsurface region) has two maxima (peaks) straddling symmetrically a minimum. Interpretation of these results in terms of ray optics, Oseen's extinction theorem, and the Cerenkov effect are given.

Engheta, N.↗

NASA NTRS1981

GaAs-oxide interface states - Gigantic photoionization via Auger-like process

Spectral and transient responses of photostimulated current in MOS structures were employed for the study of GaAs-anodic oxide interface states. Discrete deep traps at 0.7 and 0.85 eV below the conduction band were found with concentrations of 5 x 10 to the 12th/sq cm and 7 x 10 to the 11th/sq cm, respectively. These traps coincide with interface states induced on clean GaAs surfaces by oxygen and/or metal adatoms (submonolayer coverage). In contrast to surfaces with low oxygen coverage, the GaAs-thick oxide interfaces exhibited a high density (about 10 to the 14th/sq cm) of shallow donors and acceptors. Photoexcitation of these donor-acceptor pairs led to a gigantic photoionization of deep interface states with rates 1000 times greater than direct transitions into the conduction band. The gigantic photoionization is explained on the basis of energy transfer from excited donor-acceptor pairs to deep states.

Lagowski, J.↗

NASA NTRS1982

An implicit formulation for the one-dimensional two-phase multi-interface Stefan Problem

In recent years there has been an intensified effort in the analysis of the Stefan Problem. Particular interest is directed towards determining the location of the interface between the solid and liquid phases of the substance being analyzed. A method has been developed using an implicit finite difference scheme which provides an accurate calculation of the phase change interface locations for a problem with simultaneous multiple phases. This is achieved through an iterative technique which requires the phase change energy to be correctly distributed within the nodes which are undergoing a phase transition. The new method predicts the interface locations without requiring time step size control or node size modification at the interfaces.

Williams, S. D.↗

NASA NTRS1984

The Strength of the Metal. Aluminum Oxide Interface

The strength of the interface between metals and aluminum oxide is an important factor in the successful operation of devices found throughout modern technology. One finds the interface in machine tools, jet engines, and microelectronic integrated circuits. The strength of the interface, however, should be strong or weak depending on the application. The diverse technological demands have led to some general ideas concerning the origin of the interfacial strength, and have stimulated fundamental research on the problem. Present status of our understanding of the source of the strength of the metal - aluminum oxide interface in terms of interatomic bonds are reviewed. Some future directions for research are suggested.

Pepper, S. V.↗

NASA NTRS1984

Digital interface for bi-directional communication between a computer and a peripheral device

For transmission of data from the computer to the peripheral, the computer initially clears a flipflop which provides a select signal to a multiplexer. A data available signal or data strobe signal is produced while tht data is being provided to the interface. Setting of the flipflop causes a gate to provide to the peripherial a signal indicating that the interface has data available for transmission. The peripheral provides an acknowledge or strobe signal to transfer the data to the peripheral. For transmission of data from the peripheral to the computer, the computer presents the initially cleared flipflop. A data request signal from the peripheral indicates that the peripheral has data available for transmission to the computer. An acknowledge signal indicates that the interface is ready to receive data from the peripheral and to strobe that data into the interface.

Bond, H. H., Jr.↗

NASA NTRS1984

Two-region analysis of interface shape in continuous casting with superheated liquid

A slab ingot is being formed as a continuous casting by withdrawal from a mold with parallel walls. The sides of the ingot below the mold are cooled to remove heat of fusion and energy transferred to the solidification interface by superheated liquid metal in the mold. A two-region analysis is made to determine the non-uniform heat conduction from the liquid metal to the interface, and then from the interface to the cooled ingot sides. The solidification interface shape is found that is compatible with the removal of fusion energy and nonuniform heating from the liquid. The solution is obtained by two applications of a Cauchy boundary value method.

Siegel, R.↗

NASA NTRS1985

COSMIC/NASTRAN-PATRAN Interface

A three dimensional solid modeling and finite element pre and postprocessing program, PATRAN, uses the latest interactive computer graphics technology, provides a visual means to define a finite element model and its environment, and reviews its resultant model behavior. The capabilities provided by the PATRAN-COSMIC/NASTRAN interface are discussed. While the translator capabilities give some indication of the interface quality between the two programs, there are other attributes to be considered. The ideal interface would be a user transparent union of the two programs so that the engineer could move from one program to the other fluently and naturally. Hence, a valid assessment of the interface completeness must consider how close the current capabilities are to the idealized case. An example problem is presented to demonstrate how COSMIC/NASTRAN and PATRAN can be used together to meet the requirements of an actual engineering application.

Libby, D. H.↗