Mixed configuration ground state in iron(II) phthalocyanine
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Experimental synthesis and characterization of theoretically predicted compounds are important steps in the materials discovery pipeline. Here, we report on the synthesis of Co 3 PdN, which was recently predicted to be a stable magnetic antiperovskite. The Co 3 PdN thin films were grown by reactive sputtering and were confirmed to form in an antiperovskite crystal structure. The thermal stability of the compound is demonstrated up to 600 K by in situ X-ray diffraction, though the phase persists at slightly higher temperatures (700 K) in an air-free magnetometer. Both ab initio calculations and magnetization measurements find Co 3 PdN to be ferromagnetic with an experimentally determined Curie temperature of T C = 560 ± 5 K. The saturation magnetization of 1.2 μ B /Co found in the experiment is slightly lower than the 1.7 μ B /Co value expected by theory. A narrow magnetic hysteresis loop with a coercive field of 100 Oe at low temperature suggests that Co 3 PdN might be useful in electronic applications requiring fast switching of the magnetization vector. While prior prediction of Co 3 PdN showed a gapped electronic band structure for each spin channel, we show that this was due to incomplete sampling of Brillouin zone paths and that band crossings exist along R-X|M and X|M-R paths. The metallic nature of Co 3 PdN is further confirmed by temperature-dependent transport measurements, which also show a considerable anomalous Hall effect. Altogether, this work represents an appreciable step toward understanding the synthesis, structure, stability, and properties of a new magnetic material.
The contribution of clusters of different sizes to magnetism and the switching of electron scattering mechanisms in amorphous Fe{sub 67}Cr{sub 18}B{sub 15} alloy during ion Ar{sup +} irradiation is studied. The cluster magnetism is found to be related to the presence of clusters of the following two types: large α-(Fe, Cr) clusters of size D = 150–250 Å and small (D = 40–80 Å) clusters in a random intercluster medium. The generation of small ferromagnetic and antiferromagnetic clusters during ion irradiation leads to the formation of cluster glass, which affects the electrical properties of the alloy and causes a magnetic frustration. The temperature dependence of the barrier height is shown to characterize the magnetic state of the alloy in low fields. On the whole, the temperature dependence of the order parameter is a universal characteristic of the system. The temperature dependence of resistivity of initial alloys in the temperature range 98–300 K (ρ(T) ∝ T{sup 2}) is determined by electron scattering by quantum defects, and the transition into a ferromagnetic state is revealed when the derivative ∂ρ/∂T ∝ T is analyzed. The increase in resistivity and the relation ρ ∝ T{sup 1/2} in strongly inhomogeneous samples after irradiation at a dose Φ = 1.5 × 10{sup 18} ions/cm{sup 2} are caused by weak localization effects, and the transition to a ferromagnetic state becomes obvious when the derivative ∂ρ/∂T ∝ T{sup –1/2} is considered. Irradiation by fluence Φ = 3 × 10{sup 18} ions/cm2 induces a giant (twofold) increase in the alloy density, restores the ferromagnetism of large clusters, decreases the resistivity by 37%, and restores the relation ρ(T) ∝ T{sup 2}, which results from the overlapping of the irradiation-induced small clusters when their concentration increases and from an increase in the alloy density. The overlapping of clusters lowers the barrier height and decreases the sensitivity of the alloy to an applied field. The relation ρ(T) ∝ T{sup 2} is valid for the entire temperature range T = 2–300 K because of the partial screening of the magnetic moments of large clusters by a medium having the properties of cluster glass.
Chern insulator ferromagnets are characterized by a quantized anomalous Hall effect and have so far been identified experimentally in magnetically doped topological insulator thin films and in bilayer graphene moiré superlattices. We classify Chern insulator ferromagnets as either spin or orbital, depending on whether the orbital magnetization results from spontaneous spin polarization combined with spin-orbit interactions, as in the magnetically doped topological insulator case, or directly from spontaneous orbital currents, as in the moiré superlattice case. We argue that, in a given magnetic state, characterized, for example, by the sign of the anomalous Hall effect, the magnetization of an orbital Chern insulator will often have opposite signs for weak n and weak p electrostatic or chemical doping. Finally, this property enables pure electrical switching of a magnetic state in the presence of a fixed magnetic field.
We report an approach to confine the carriers in single-layer graphene, which leads to quantum devices with field-induced quantum confinement. We demonstrated that the Coulomb-blockade effect evolves under a uniform magnetic field perpendicular to the graphene device. Our experimental results show that field-induced quantum dots are realized in graphene, and a quantum confinement-deconfinement transition is switched by the magnetic field.
We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torque thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.
We report that information technology depends on how one can control and manipulate signals accurately and quickly. Transistors are at the core of modern technology and are based on electron charges. But as the device dimension shrinks, heating becomes a major problem. The spintronics explores the spin degree of electrons and thus bypasses the heat, at least in principle. For this reason, spin-based technology offers a possible solution. In this review, we survey some of the latest developments in all-optical switching (AOS), where ultrafast laser pulses are able to reverse spins from one direction to the other deterministically. But AOS only occurs in a special group of magnetic samples and within a narrow window of laser parameters. Some samples need multiple pulses to switch spins, while others need a single-shot pulse. To this end, there are several models available, but the underlying mechanism is still under debate. This review is different from other prior reviews in two aspects. First, we sacrifice the completeness of reviewing existing studies, while focusing on a limited set of experimental results that are highly reproducible in different labs and provide actual switched magnetic domain images. Second, we extract the common features from existing experiments that are critical to AOS, without favoring a particular switching mechanism. We emphasize that given the limited experimental data, it is really premature to identify a unified mechanism. Lastly, we compare these features with our own model prediction, without resorting to a phenomenological scheme. We hope that this review serves the broad readership well.
The central challenge in realizing non-volatile, E-field manipulation of magnetism lies in finding an energy efficient means to switch between the distinct magnetic states in a stable and reversible manner. In this work, we demonstrate using electrical polarization-induced charge screening to change the ground state of magnetic ordering in order to non-volatilely tune magnetic properties in ultra-thin Co 0.3 Fe 0.7 /Ba 0.6 Sr 0.4 TiO 3 /Nb:SrTiO 3 (001) multiferroic heterostructures. A robust, voltage-induced, non-volatile manipulation of out-of-plane magnetic anisotropy up to 40 Oe is demonstrated and confirmed by ferromagnetic resonance measurements. This discovery provides a framework for realizing charge-sensitive order parameter tuning in ultra-thin multiferroic heterostructures, demonstrating great potential for delivering compact, lightweight, reconfigurable, and energy-efficient electronic devices.
Abstract Multitopic organic linkers can provide a means to organize metal cluster nodes in a regular three‐dimensional array. Herein, we show that isonicotinic acid N ‐oxide (HINO) serves as the linker in the formation of a metal–organic framework featuring Dy 2 single‐molecule magnets as nodes. Importantly, guest solvent exchange induces a reversible single‐crystal to single‐crystal transformation between the phases Dy 2 (INO) 4 (NO 3 ) 2 ⋅2 solvent (solvent=DMF (Dy 2 ‐DMF), CH 3 CN (Dy 2 ‐CH 3 CN)), thereby switching the effective magnetic relaxation barrier (determined by ac magnetic susceptibility measurements) between a negligible value for Dy 2 ‐DMF and 76 cm −1 for Dy 2 ‐CH 3 CN. Ab initio calculations indicate that this difference arises not from a significant change in the intrinsic relaxation barrier of the Dy 2 nodes, but rather from a slowing of the relaxation rate of incoherent quantum tunneling of the magnetization by two orders of magnitude.
Abstract Multitopic organic linkers can provide a means to organize metal cluster nodes in a regular three‐dimensional array. Herein, we show that isonicotinic acid N ‐oxide (HINO) serves as the linker in the formation of a metal–organic framework featuring Dy 2 single‐molecule magnets as nodes. Importantly, guest solvent exchange induces a reversible single‐crystal to single‐crystal transformation between the phases Dy 2 (INO) 4 (NO 3 ) 2 ⋅2 solvent (solvent=DMF (Dy 2 ‐DMF), CH 3 CN (Dy 2 ‐CH 3 CN)), thereby switching the effective magnetic relaxation barrier (determined by ac magnetic susceptibility measurements) between a negligible value for Dy 2 ‐DMF and 76 cm −1 for Dy 2 ‐CH 3 CN. Ab initio calculations indicate that this difference arises not from a significant change in the intrinsic relaxation barrier of the Dy 2 nodes, but rather from a slowing of the relaxation rate of incoherent quantum tunneling of the magnetization by two orders of magnitude.
Chiral magnons, the quanta of handed spin waves, transport spin angular momentum without energy loss due to Joule heating. Here, the recently discovered altermagnets were proposed to host chiral magnons arising from a nonrelativistic exchange mechanism, similar to that in ferromagnets but without net magnetization, offering a stray-field-free platform for efficient magnon spin-current manipulation. In this Letter, we directly observed chiral magnons in the altermagnetic prototype MnTe using polarized inelastic neutron scattering. Furthermore, the magnon chirality was found to be reversibly switched by magnetic-field control, establishing a robust foundation for functional altermagnetic magnonics.
Materials and processing techniques for yielding magnetic memory cores with specified partial set state threshold characteristics were developed as well as integrated magnetic circuit elements
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Magnetic components play a key role in determining the size, cost, efficiency of a power converter. They are more significant in current source converters, where the dc-link energy is stored in an inductor/transformer. In such cases, the magnetics have a predominantly DC flux, superimposed by an AC flux at switching frequency. Previously, permanent magnets have been proposed to offset the DC flux and thereby reduce the size, cost, and losses of the inductors/transformers. This paper starts by analyzing the issue of eddy currents when using such standard permanent magnets, especially in medium frequency applications, making them practically unusable. Alternatively, the paper proposes the use of laminated permanent magnets to reduce these eddy currents and thereby realize the benefits of offsetting the DC flux to reduce the size, cost, and loss of inductors/transformers. Using a soft-switching solid-state transformer as an example, experimental results are presented to show the impact of eddy currents in standard permanent magnets when used with a medium frequency transformer. Here, experimental results showing the benefits of using laminated magnets in reducing the eddy currents are presented.
As magnetic storage density approaches 1TB/in 2 , a grand challenge is looming as how to read/write such a huge amount of data within a reasonable time. The ultrafast optical manipulation of magnetization offers a solution, but little is known about the intrinsic speed limit of quantum spin switching. Here, we report that low-energy 50-fs laser pulses can induce spin canting in Fe nanoparticles within 55 fs, breaking the previous record by at least one order of magnitude. Both linearly and circularly polarized light can be used to tilt spins. In our model, the incident laser field first excites the orbital angular momentum, and through spin-orbit coupling, the spin cants out-of-plane and results in a distinctive diamond hysteresis loop. The spin canting time decreases with spin angular momentum. This spin canting is not limited to Fe nanoparticles and is also observed in Fe/ Pt and Fe 3 O 4 nanoparticles. Lastly, our results demonstrate the potential of magnetic nanostructures as a viable magnetic medium for high density and fast-switching magnetic storage devices.
Atomistic spin model simulations using Langevin dynamics are performed to study the factors that determine the thermomagnetic recording time window in FePt media. The onset of thermomagnetic writing occurs at a temperature T{sub o} larger than the Curie temperature T{sub c} as a result of the finite time of relaxation of the magnetization by the linear reversal mode. The Bloch relaxation rate of magnetization growth during cooling below T{sub c} is independent on the write field, provided the field is stronger than some threshold value. Application of a strong write field reduces switching time through better spin alignment in the paramagnetic regime. Finite size effects on the probability distribution of freezing temperatures T{sub f} and the free energy provide insight on the thermomagnetic reversal mechanism. Constraints on the “pulse-mode” of recording when the head field reverses direction during cooling are also considered.
Abstract 2D magnetic materials hold promise for quantum and spintronic applications. 2D antiferromagnetic materials are of particular interest due to their relative insensitivity to external magnetic fields and higher switching speeds compared to 2D ferromagnets. However, their lack of macroscopic magnetization impedes detection and control of antiferromagnetic order, thus motivating magneto‐electrical measurements for these purposes. Additionally, many 2D magnetic materials are ambient‐reactive and electrically insulating or highly resistive below their magnetic ordering temperatures, which imposes severe constraints on electronic device fabrication and characterization. Herein, these issues are overcome via a fabrication protocol that achieves electrically conductive devices from the ambient‐reactive 2D antiferromagnetic semiconductor NiI 2 . The resulting gate‐tunable transistors show band‐like electronic transport below the antiferromagnetic and multiferroic transition temperatures of NiI 2 , revealing a Hall mobility of 15 cm 2 V −1 s −1 at 1.7 K. These devices also allow direct electrical probing of the thickness‐dependent multiferroic phase transition temperature of NiI 2 from 59 K (bulk) to 28 K (monolayer).