Search NASA⌕ Search

SEARCH · Search NASA

Results for “MAGNETRONS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Ti{sub 2}AlN thin films synthesized by annealing of (Ti+Al)/AlN multilayers

Highlights: • Epitaxial thin films of the MAX phase Ti{sub 2}AlN are obtained by thermal annealing. • A new metastable (Ti,Al,N) solid solution with the structure of α-T is evidenced. • The formation of the MAX phase occurs at low temperature (600 °C). - Abstract: Single-phase Ti{sub 2}AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AlN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al{sub 2}O{sub 3} substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of ∼400 °C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of α-Ti, whereas the formation of Ti{sub 2}AlN occurs at 550–600 °C. Highly oriented (0002) Ti{sub 2}AlN thin films can be obtained after an annealing at 750 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

Highlights: • We fabricated AOS TFTs using Al co-sputtered IZO thin films as active layers. • Low Al ratio in IZO thin films suppresses carrier concentration and oxygen vacancies. • Addition of 0.62 wt.% Al into IZO could reduce the chance of creating trap states. • Fabricated Al-IZO TFT has improved bias stability under bias stress conditions. • Optical transmittance of Al-IZO film greater than 90% in visible light (400–800 nm). - Abstract: The electrical performance and bias stability of radio-frequency magnetron co-sputtered aluminum-indium-zinc oxide (Al-IZO) thin-film transistors (TFTs) were investigated, with respect to the atomic proportions of Al. Other parameters such as the indium-zinc oxide (IZO) target power, oxygen partial pressure, and initial and process pressures of the chamber were fixed. At a low Al atomic ratio (0.62 wt.%), the electrical performance and bias stability of the Al-IZO TFT were optimized because of the suppression of the generation of oxygen vacancies and the strong bond between Al and oxygen atoms (Al–O; 501.9 kJ/mol). Compared to pure IZO TFTs, the Al-IZO TFT exhibited a small shift in the threshold voltage under bias stress conditions. A higher threshold voltage of −2.24 V and an improved subthreshold swing of 1.35 V/dec were also observed. We demonstrated that the Al-IZO TFT could be a promising candidate for switching and driving operations in mass-produced display applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Investigation of CrMnV and CrMnTiV multi principal element alloys thin films for use as exit windows of electron beam accelerators

Here, this study explores CrMnV and CrMnTiV multi principal element alloy (MPEA) films as candidates for electron beam exit windows in industrial, high-power accelerators. Films were deposited via magnetron sputtering on various substrates and exposed to 66 kGy of 10 MeV e-beam irradiation. Structural and mechanical properties were analyzed using FESEM, XRD, and nanoindentation. CrMnTiV films exhibited superior grain uniformity and hardness, regardless of the substrate type. Compared to bulk materials, both MPEA films demonstrated higher hardness and excellent radiation resistance. These results highlight the potential of MPEA films as durable, radiation-tolerant materials for high-performance accelerator exit window applications.

Electron Beam Irradiation↗
DOE OSTI2023

Cost-efficiency enhancement of X- and Ku-band split waveguides for industrial accelerators

Compact microwave electron linear accelerators must operate at high frequencies in order to maintain tight SWaP (size, weight, and power) requirements, set by modern applications. Currently, the frequencies are practically limited to X- and Ku-bands because of the availability of MW-class magnetrons, required to achieve beam energies of several MeV, and tight fabrication tolerances. The latter is associated with micron-level accuracy and further waveguide frequency tuning process, both increasing its costs dramatically. By implying a novel split structure fabrication approach, it is possible to relax these tolerances to the values of 10–20 μm and eliminate the tuning step, greatly reducing their total costs. Finally, this paper presents the results of microwave measurements of split X- and Ku-band accelerating structures of different types and discusses the benefits of our fabrication approach.

43 PARTICLE ACCELERATORS↗
DOE OSTI2019

Sub-MeV ultra-compact linac for radioactive isotope sources replacement, non-destructive testing, security and medical applications

RadiaBeam Technologies, LLC has developed an inexpensive, hand-portable 180 keV electron accelerator to replace 57 Co radionuclide sources in Cascade Header Enrichment Monitor detectors. We used two innovative technologies in our design: a Ku-band (1 cm wavelength) magnetron, and a split accelerating structure design to reduce manufacturing costs. In this paper, we will discuss the accelerator, including X-ray convertor and accelerating structure design. The results of RF measurements of a Ku-band split structure prototype will also be reviewed. Other applications of Ku-band linacs include compact backscatter and transmission X-ray security inspection systems, as well as computed tomography (CT) systems for luggage and parcel screening. The main requirement for luggage inspection systems is that the X-ray source must be extremely compact. Further, the required energies should cover the range from 180 keV to 1 MeV. In this paper, we will discuss the linac’s energy scalability and other modifications that will enable our technology to address these applications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Radioisotope replacement with compact electron linear accelerators

The replacement of radioactive sources with alternative technologies has been identified as a priority by international authorities, due to the risk of accidents and diversion by terrorists for use in Radiological Dispersal Devices. Many of these sources can be replaced with the X-rays produced by electron beams accelerated to MeV energies. However, the size, weight and costs of electron linacs must be significantly reduced to be considered for radioisotope replacement. RadiaBeam Technologies, LLC is developing a series of inexpensive compact electron accelerators in the 1–10 MeV range for radioisotope replacement such as Ir-192, Cs-137 and Co-60 for various applications. The dramatic level of miniaturization and cost-reduction was achieved thanks to the implementation of such innovative technologies as high-frequency magnetrons, split accelerating structure fabrication technology and solid-state Marx modulators. Here, in this paper, we overview RadiaBeam's compact linac developments, discuss the enabling technologies, and report on the current progress.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

The microstructure and He + ion irradiation behavior of novel low-activation W-Ta-Cr-V refractory high entropy alloy for nuclear applications

Microstructure and nanohardness of a nearly equimolar W-Ta-Cr-V high entropy alloy (HEA), as well as its irradiation response under He + irradiation, were investigated. The single-phase body-centered cubic nanostructured alloy with a 1 µm thick layer was fabricated on a silicon substrate using a magnetron sputtering method. The HEA film has a complex microstructure consisting of micrometric domains that exhibit internal nanostructure controlled by their crystal orientation. The measured nanohardness of the W-Ta-Cr-V alloy is 13 ± 2 GPa, which significantly exceeds the hardness of nanocrystalline tungsten as a result of the high solid-solution strengthening effect. In order to evaluate the irradiation resistance of the HEA film, the material was irradiated with 200 keV He + ions at room temperature, with two different ion fluences: 1 × 10 16 and 5 × 10 16 ions/cm 2 . Using transmission electron microscopy, a high density of extremely fine He bubbles is observed that were uniformly distributed in the matrix. The increase of He + ion fluence increased the density of bubbles, whereas their size remained at a similar level, which indicates that the damage proceeds by the nucleation of additional He bubbles, not by their growth.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ku-band electron linac for battery-powered hand-portable 2-MeV X-ray generator

X-ray generators, producing radiation in MeV range, are a critical tool for radiography, non-destructive testing and security applications. Field operation of such source requires them to be hand-portable, autonomous and allow parameter adjustability. RF linear accelerators can serve as a flexible, reliable, and robust radiation generator alternative to dangerous radioisotopes and bulky betatrons that are currently used for field radiography if their size, weight, cost, and imaging performance are matched to these sources. Here, in this paper, we present the design and test results of a 2 MeV Ku-band electron linac for a hand-portable X-ray generator system for field radiography being developed by RadiaBeam. The dramatic scale of miniaturization and cost-reduction is achieved thanks to the implementation of innovative technologies such as air-cooled Ku-band air-traffic control magnetrons, a split accelerating structure fabrication technique, and solid-state Marx modulators. This paper presents the design of the first prototype of the accelerator, its operation from Li-Ion batteries, as well as high-power and beam measurements.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Sputtered indium tin oxide as a recombination layer formed on the tunnel oxide/poly-Si passivating contact enabling the potential of efficient monolithic perovskite/Si tandem solar cells

We focus on utilizing sputtered indium tin oxide (ITO) as a recombination layer, having low junction damage to an n-type silicon solar cell with a front-side tunnel oxide passivating electron contact, thereby enabling the development of a high efficiency monolithic perovskite/Si tandem device. High transparency and low resistivity ITO films are deposited via low power DC magnetron sputtering at room temperature onto a front-side thin SiO x /n + poly-Si contact in a complete Cz n-Si cell with a back-side Al 2 O 3 /SiN x passivating boron-diffused p + -emitter on a random pyramid textured surface. We report the cell characteristics before and after ITO sputtering, and we find a cure at 250 °C in air is highly effective at mitigating any sputtering induced damage. Our ITO coated sample resulted in an implied open-circuit voltage (iV oc ) of 684.7 ± 11.3 mV with the total saturation current density of 49.2 ± 14.8 fA/cm 2 , an implied fill factor (iFF) of 81.9 ± 0.8%, and a contact resistivity in the range of 60 mΩ-cm 2 to 90 mΩ-cm 2 . After formation of a local Ag contact to the rear emitter and sputtered ITO film as the front-side contact without grid fingers, the pseudo-efficiency of 20.2 ± 0.5% was obtained with the V oc of 670.4 ± 7 mV and pseudo FF of 77.3 ± 1.3% under simulated one sun with the calculated short-circuit current density of 30.9 mA/cm 2 from the measured external quantum efficiency. Furthermore, our modelling result shows that efficiency exceeding 25% under one sun is practically achievable in perovskite/Si tandem configuration using the ITO recombination layer connecting a perovskite top cell and a poly-Si bottom cell.

14 SOLAR ENERGY↗
DOE OSTI2024

Durability enhancement of all-solid-state electrochromic devices by adjusting the charge density ratio between electrochromic and counter electrode layers

Here, owing to an increase in global warming, smart-window devices based on charge-balanced electrochromic devices (ECDs), which exhibit high potential to increase the thermal efficiency of buildings, have gained prominence. However, studies on the fabrication and cycling stability of charge-balanced ECDs are scarce. In this study, WO 3 and NiO x films were deposited on indium-tin-oxide (ITO)-coated glass substrates by reactive direct-current magnetron sputtering, and the deposition time was varied to control the thickness and charge density of the thin films. Subsequently, the NiO x /ITO/glass and WO 3 /ITO/glass substrates were laminated with a Li-based polymeric electrolyte to fabricate all-solid-state ECDs comprising electrochromic (EC) and counter-electrode (CE) layers in charge-density ratios of 12.6, 6.4, 2.3, and 1.1. Changes in the electrochromic properties, device-layer microstructure, crystal structure, and elemental composition of the as-constructed ECDs before and after degradation were investigated to understand the influence of the charge-density ratio of the EC and CE layers on the long-term durability of ECDs. Increasing the charge-density ratio decreased the cycling stability of the device owing to changes in the microstructure and crystal structure of the NiO x layer in the microstructural deep-trap sites. Among all the ECDs, those comprising EC and CE layers with similar charge densities showed the most stable optical modulation and highest long-term durability. Finally, based on the aforementioned results, a degradation mechanism for charge-imbalanced all-solid-state ECDs was proposed. This study is expected to open new frontiers in designing optimal-performance electrochemical devices with a wide variety of potential applications.

14 SOLAR ENERGY↗
DOE OSTI2018

Effect of the addition of Si into V 2 O 5 coatings: Structure and tribo-mechanical properties

Vanadium oxide (V2O5) is one of the lubricious oxides with the potential to be used as a solid lubricant at elevated temperatures. However, the material itself is not hard wear-resistant, so most of the research has focused on adding V into hard nitride coatings that could lead to the formation of a self-lubricating V(2)O(5)layer when heated. The other possible solution, which has been less studied, is to look for mechanisms to enhance the hardness of the oxide coating. In this research, we investigate the effect of the addition of Si into the V2O5 coatings, aiming to find conditions that lead to enhance hardness and/or reduced wear while keeping the high temperature lubricity of the V2O5 structure. For this, Si modified V2O5 coatings were deposited using a dual magnetron sputtering system. The results showed that small additions of Si (< 2.0 at%) improved the hardness of the V2O5 coatings up to 5 times while keeping the same temperature dependence of the coefficient of friction than V2O5. Dry sliding experiments using the pin-on-disc configuration against silicon nitride balls were performed at 25, 300 and 600 degrees C. Wear factors in the 10(-7) mm(3)/Nm range were obtained, indicating a good wear resistance. Further addition of Si into the V2O5 structure led to a loss of the crystalline ordering and a significant reduction in the hardness.

Hall-Petch↗
DOE OSTI2019

Correlating high temperature mechanical and tribological properties of CrAlN and CrAlSiN hard coatings

CrAlN and CrAlSiN hard coatings deposited by magnetron sputtering were analyzed for their high temperature mechanical and tribological properties. High temperature nanoindentation measurements on both coatings were performed from room temperature up to 700 °C in steps of 100 °C where a reduction in hardness H and elastic modulus E* from their initial values was noticed. In addition, high temperature tribological tests were conducted in inert atmosphere in the same temperature range to obtain information about the coefficient of friction and the wear coefficient. In order to link the tribological behavior to the obtained mechanical properties, the H/E* ratio was calculated and compared to the high temperature wear from the current and other studies with similar coatings. Finally, the evolution of the mechanical and tribological properties at high temperature is discussed based on the current knowledge available in literature.

Drnovšek, Aljaž↗
DOE OSTI2021

High temperature fracture toughness of single-layer CrAlN and CrAlSiN hard coatings

Hardness and toughness are among of the most important physical properties of hard coatings and it is important to analyze them at temperatures present during coating applications. CrAlN and CrAlSiN are hard coating materials frequently used in high temperature applications. Here, while both possess high oxidation resistance and thermal stability, they differ in their microstructure. In this work, the fracture toughness of magnetron-sputtered single-layer CrAlN and CrAlSiN hard coatings was determined up to 700 °C by in-situ scanning electron microscopy micro-cantilever deflection tests. The results show a decreasing trend of the fracture toughness with increasing temperature. While both coatings' fracture toughness trends are similar up to 400 °C, they diverge at higher temperatures. In general, the evolution of the fracture toughness with increasing temperature shows similarities to the observed changes in hardness in the same temperature range.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Adhesion, structure, and mechanical properties of Cr HiPIMS and cathodic arc deposited coatings on SiC

Chromium deposited by high-power impulse magnetron sputtering (HIPIMS) versus cathodic arc (CA) processes exhibits very different mechanical properties. Combining the two can result in a single-phase with superior performance that can be tailored for use in coating SiC for advanced nuclear fuel cladding. Coating morphology, residual stress, elemental depth profiles, and mechanical testing by scratch, pull-off adhesion, and microcantilevers are shown for HiPIMS, CA, and combined coatings. CA coatings were likely to spall and had lower adhesion strength due to tensile residual stresses but had desirable material properties. Additionally, by depositing an initial layer of Cr by HiPIMS followed by a layer of Cr by CA, a more adherent coating was achieved and some of the stress issues with CA morphology were resolved. Combined coatings withstood at least 80 MPa in pull-off adhesion tests and had maximum failure stress values of 5GPa in microcantilever tests. These results were better than either individual deposition method and point to a hybrid approach being a path forward for a more robust coating.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Modes of strain accommodation in Cu-Nb multilayered thin film on indentation and cyclic shear

Two-phase layered thin films with a high density of semi-coherent interfaces exhibit excellent mechanical properties and thermal stability. Here, in this study, a magnetron-sputtered Cu-Nb dual-layered thin film (~500 nm for Cu and ~150 nm for Nb) having an amorphous interface between Cu and Nb with a high density of aligned growth twins in Cu is subjected to severe surface deformation. The material is loaded using indentation and cyclic shear under tribological testing. The strain accommodation in the subsurface microstructure after deformation varies based on the local structure and deformation mode. Grain refinement and crack formations in the stressed region of the Nb layer and localized crystallization of the amorphous interface are observed after indentation and scratch testing. Pronounced detwinning of growth twins in the Cu layer under the cyclic shear strain leaves large dislocations sites and loops which are observed both by high-resolution transmission electron microscopy and experiment-guided molecular dynamic (MD) simulations. Our simulations provided insights into understanding the pathway for the detwinning process under cyclic shear loading.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Hillock formation in co-deposited thin films of immiscible metal alloy systems

Hillocks are protruding sections of a surface that can influence the electronic and mechanical properties of a thin film. In monolithic films, these hillocks are formed due to thermally induced stress gradients during deposition. In this study, the surface morphology of co-sputtered immiscible Cu-X (X is a body centered cubic (BCC) group V or VI metal) thin films is characterized to elucidate the conditions that lead to hillock formation. Cu-Ta and Cu-Mo-Ag films were co-deposited with physical vapor deposition (PVD) magnetron sputtering at 25, 400, 600, and 800°C. A significant number of homogeneously distributed surface hillocks were observed only in the 600 and 800°C films. High-angle annular dark field (HAADF) cross-sectional imaging revealed significant Cu agglomerations underneath the protruding features. For the Cu-Ta films, the Cu was enveloped in a Cu-Ta nanocrystalline matrix. For Cu-Mo-Ag, the Cu was surrounded by Mo-Ag concentration modulations. While thermal stress gradients arise during deposition of immiscible metal films, biaxial stress calculations and literature cases reveal that they are not solely responsible for hillock formation. The observed morphologies align with a surface diffusion kinetic model that evaluates diffusion length of adatoms during deposition as a function of deposition temperature. Finally, this indicates a phase separation driving force paired with the constituent elements’ dissimilar mobilities at elevated deposition temperatures contribute to the presence of hillocks.

36 MATERIALS SCIENCE↗
DOE OSTI2025

High-throughput multimodal exploration of a nanocrystalline Cu-Ag library

Sputter-deposited, nanocrystalline Cu-Ag thin films produced across a broad compositional and deposition-parameter space were evaluated to unravel the process-structure-property relationships important for creating hard, conductive electrical contacts and coatings. Combinatorial deposition involving pulsed direct current magnetron sputtering of elemental targets enabled swift examination of nearly the full range of alloy compositions and a relevant portion of deposition atomistics. Several high-throughput characterization modalities were employed to evaluate the chemistry, structure, and properties of the films. The resultant hardness, modulus, film density, crystal texture, and resistivity were analyzed in terms of key deposition characteristics (incident atom kinetic energy and incidence angle) predicted by binary-collision, kinematic Monte Carlo simulations. The study revealed improved hardness, parabolic resistivity dependence on composition, and compositional and process dependencies of film tarnishing. The results are discussed in the context of variations in microstructure and film density. Transmission electron microscopy and X-ray diffraction demonstrate several forms of compositional variation including solute segregation to grain boundaries as well as periodic, intragranular compositional modulations. Annealing of a Cu-rich alloy film exhibiting grain boundary segregation showed that this as-deposited, compositional variation is not stable above 100 °C. Finally, the Cu-Ag system is shown to have potential for hard, conductive, tarnish-resistant and room temperature-stable nanocrystalline thin films across the composition space.

36 MATERIALS SCIENCE↗