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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Metal oxide semiconductor four-stage binary counter contains reset capability as well as four parallel-set inputs gated in by a logic signal. Parallel-set inputs permit setting the counter into any of sixteen possible states.
Future generation computer utilizes cell of single metal oxide semiconductor wafer containing general purpose processor section and small memory of approximately 512 words of 16 bits each. Cells are organized into groups and groups interconnected to form computer.
Contamination in metal oxide semiconductor devices and thermal oxide on silicon
Pyrolytic deposition of silicon nitride films on silicon substrates for use as gate dielectric of metal oxide semiconductors
Screening measurements and fabrication of metal oxide semiconductor and multilayer-bipolar wafers
Ceramic fibers formation by particles mechanical deformation by extrusion in W matrix, describing grain structure of various extruded metal oxides
Solid propellant extinguishment by rapid depressurization, investigating motor configuration effect, binder, burning rate catalyst, oxidizer, metal loading and exhaust pressure levels
Complementary metal oxide semiconductor and bipolar transistors fabrication on same integrated circuit chip by C-squared technology
Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability. Thermistor in feedback loop provides temperature compensation for large drifts in the sensor.
Metal oxide silicon field effect transistors for integrated circuitry in data processing
Large scale integration and metal oxide semiconductor microelectronic testing techniques including combinatorial, sequential, functional, and parametric methods
Ceramic fibers formation by particles mechanical deformation by extrusion in W matrix, describing grain structure of various extruded metal oxides
Sodium superoxide isothermal decomposition, detailing metallic oxide effects with differential thermal analysis, thermogravimetry and differential thermogravimetry
Mercury ion thruster isolator lifetime tests were performed using different isolator materials and geometries. Tests were performed with and without the flow of mercury through the isolators in an oil diffusion pumped vacuum facility and cryogenically pumped bell jar. The onset of leakage current in isolators occurred in time intervals ranging from a few hours to many hundreds of hours. In all cases, surface contamination was responsible for the onset of leakage current and subsequent isolator failure. Rate of increase of leakage current and the leakage current level increased approximately exponentially with isolator temperature. Careful attention to shielding techniques and the elimination of sources of metal oxides appear to have eliminated isolator failures as a thruster life limiting mechanism.
Modifications to the Pioneer 10/11 meteoroid detection experiment to allow it to be used for outer planet missions were investigated. Both pressurized cells and metal-oxide silicon (MOS) penetration detectors are considered. Both the sensors systems and the electronics are treated. Investigation of the calibration and characterization of the MOS penetration detector is reported.
A family of computer programs facilitating the design, layout, evaluation, and testing of digital electronic circuitry is described. CADAT (computer aided design and test system) is intended for use by NASA and its contractors and is aimed predominantly at providing cost effective microelectronic subsystems based on custom designed metal oxide semiconductor (MOS) large scale integrated circuits (LSIC's). CADAT software can be easily adopted by installations with a wide variety of computer hardware configurations. Its structure permits ease of update to more powerful component programs and to newly emerging LSIC technologies. The components of the CADAT system are described stressing the interaction of programs rather than detail of coding or algorithms. The CADAT system provides computer aids to derive and document the design intent, includes powerful automatic layout software, permits detailed geometry checks and performance simulation based on mask data, and furnishes test pattern sequences for hardware testing.
The development of a beam-leaded low power, high performance metal-oxide-semiconductor (MOS), 256-bit random access memory (RAM) was reported. Previous success with the aluminum-gate current-sense version and a silicon-gate voltage-sense version led to the present effort to make a beam-leaded silicon-gate RAM. Some problems unique to the silicon-on-sapphire beam-lead process development are presented. Beam-leaded SOS TA5388 devices using a Si3N4 passivation layer were shown to have good electrical parameters.
Mercury ion thruster isolator lifetime tests were performed using different isolator materials and geometries. Tests were performed with and without the flow of mercury through the isolators in an oil diffusion pumped vacuum facility and cryogenically pumped bell jar. The onset of leakage current in isolators tested occurred in time intervals ranging from a few hours to many hundreds of hours. In all cases, surface contamination was responsible for the onset of leakage current and subsequent isolator failure. Rate of increase of leakage current and the leakage current level increased approximately exponentially with isolator temperature. Careful attention to shielding techniques and the elimination of sources of metal oxides appear to have eliminated isolator failures as a thruster life limiting mechanism.