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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

1987 Annual Conference on Nuclear and Space Radiation Effects, Snowmass Village, CO, July 28-31, 1987, Proceedings

Various papers on nuclear and space radiation effects are presented. The general topics addressed include: basic mechanisms of radiation effects, single-event phenomena, temperature and field effects, modeling and characterization of radiation effects, IC radiation effects and hardening, and EMP/SGEMP/IEMP phenomena. Also considered are: dosimetry/energy-dependent effects, sensors in and for radiation environments, spacecraft charging and space radiation effects, radiation effects and devices, radiation effects on isolation technologies, and hardness assurance and testing techniques.

Source record↗
NASA NTRS1988

Effects of cosmic rays on single event upsets

The efforts at establishing a research program in space radiation effects are discussed. The research program has served as the basis for training several graduate students in an area of research that is of importance to NASA. In addition, technical support was provided for the Single Event Facility Group at Brookhaven National Laboratory.

Lowe, Calvin W.↗
NASA NTRS2021

LET and Range Characteristics of Proton Recoil Ions in Gallium Nitride (GaN)

A better understanding of the linear energy transfer and the range of proton recoil ions in gallium nitride is necessary to properly evaluate GaN device radiation tolerance. By analyzing the linear energy transfer (LET) and range of recoil heavy ions in GaN we can begin to reproduce the body of knowledge that exists for Si-based devices for this upcoming technology. Although the previous data on older technology has impressive depth and breadth we must be diligent and cautious in the application of these institutional intuitions when applied to emerging technologies such as GaN. As ever increasing materials science advances emerge, a sound methodology for evaluating new technologies must be established in order to apply what we know towards the effort of ensuring radiation tolerance.

gallium nitride (GaN)↗
NASA NTRS2017

Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

Power semiconductor devices↗
NASA NTRS1992

1992 IEEE Annual Conference on Nuclear and Space Radiation Effects, 29th, New Orleans, LA, July 13-17, 1992, Proceedings

The papers presented in this volume provide an overview of recent theoretical and experimental research related to nuclear and space radiation effects. Topics dicussed include single event phenomena, radiation effects in particle detectors and associated electronics for accelerators, spacecraft charging, and space environments and effects. The discussion also covers hardness assurance and testing techniques, electromagnetic effects, radiation effects in devices and integrated circuits, dosimetry and radiation facilities, isolation techniques, and basic mechanisms.

Van Vonno, Nick W.↗
NASA NTRS1986

The Galileo single-event upset solution and risk assessment

The Galileo probe will be subject to radiation fields and energetic particle bombardment during its outward bound journey and in orbit around Jupiter and its moons. To avoid the occurrence and propagation of effects of single event upset (SEU) bit state changes induced by the bombardments attempts were made to harden the Galileo electronics against SEUs. The hazards are especially acute for Schottky diode and low-power Schottky TTL parts. The preventive action options which were scheduled are reviewed, noting the selection of CMOS chips as replacements for SEU-susceptible devices. The simulation and risk assessment that were performed to evaluate the potential success of the replacements are summarized, with emphasis on the data employed to ensure the accuracy of the assessments and the predicted effects of SEUs in the various Galileo subsystems.

Burdick, Garry M.↗
NASA NTRS2006

Single Event Transient Analysis of an SOI Operational Amplifier for Use in Low-Temperature Martian Exploration

The next generation of Martian rover#s to be launched by JPL are to examine polar regions where temperatures are extremely low and the absence of an earth-like atmosphere results in high levels of cosmic radiation at ground level. Cosmic rays lead to a plethora of radiation effects including Single Event Transients (SET) which can severely degrade microelectronic functionality. As such, a radiation-hardened, temperature compensated CMOS Single-On-Insulator (SOI) Operational Amplifier has been designed for JPL by the University of Tennessee and fabricated by Honeywell using the SOI V process. SOI technology has been shownto be far less sensitive to transient effects than both bulk and epilayer Si. Broad beam heavy-ion tests at the University of Texas A&M using Kr and Xebeams of energy 25MeV/amu were performed to ascertain the duration and severity of the SET for the op-amp configured for a low and high gain application. However, some ambiguity regarding the location of transient formation required the use of a focused MeV ion microbeam. A 36MeV O6(+) microbeam. the Sandia National Laboratory (SNL) was used to image and verify regions of particular concern. This is a viewgraph presentation

operational amplifier↗
NASA NTRS1985

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗
NASA NTRS2003

Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies

Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets (MBU) in registers and were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors was discussed.

Yoder, G. I.↗
NASA NTRS2020

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗
NASA NTRS2020

Recent Radiation Test Results on a 22FDX Test Vehicle

Total ionizing dose irradiations were performed on a 22 nm fully-depleted silicon-on-insulator static random access memory. There is a strong well-bias effect in the TID response. Combined TID and SEE results are also presented.

total ionizing dose↗