SEARCH · Search NASA

Results for “Solid state device”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 415 records · Page 23

All sources NASA NTRS DOE OSTI

NASA NTRS1994

Current-Collecting Grids For AMTEC Electrodes

Photodeposition or sputter deposition of refractory metal in grid pattern on solid electrolyte of alkali-metal thermoelectric converter (AMTEC) prior to deposition of electrode decreases electronic resistance and increases current and peak power of converter significantly. Concept also applicable to other devices that include electrically conductive, porous electrodes; such as solid-state fuel cells and solid-state electrolysis cells.

Ryan, Margaret A.↗

DOE OSTI2025

Tunable 3D Aerosol Jet Printing of Low‐Power Redox‐Gated Transistors with Multicomponent Inks

Printed hybrid electronics (PHE) offer a promising alternative for microelectronics fabrication, addressing some limitations of traditional subtractive manufacturing. Despite the versatility of PHE, particularly in the customization of printing inks, these devices have not yet matched the performance of silicon-based electronics due to challenges in gating mechanisms and operational stability. However, the potential of low-voltage redox-gating to achieve significant carrier modulations in correlated metal oxides remains unexplored in PHE. This study systematically investigates vanadium dioxide (VO 2 ) nanoparticles and redox inks, linking their organization in solution to their morphology, phase state, and properties in solid films and multilayered structures. Using an aerosol jet printer (AJP), a solid-state VO 2 transistor is fabricated, operating at just 0.4 V gating voltage. The printed VO 2 films demonstrate redox-modulated conductivity and consistent transistor behavior. The solid-state redox gating materials also provide long-term stability, with the device maintaining performance over 6000 cycles without degradation. These results highlight the potential of redox gating to enhance the application of functional nanoparticles in printed hybrid microelectronics, especially for flexible, low-voltage, and energy-efficient devices.

36 MATERIALS SCIENCE↗

NASA NTRS1979

A solid-state phase-insensitive ultrasonic transducer

Photoconductive acoustoelectric transducer (AET) functions as phase-insensitive ultrasonic transducer. Device is easy to use and requires no additional noisy components such as light or thermal source.

Heyman, J. S.↗

NASA NTRSDate not supplied

Space Qualification Studies of AOTF Devices Under the MISSE-11 Mission

The acousto-optic tunable filter (AOTF) devices are used in a variety of applications including hyperspectral and spectrapolarimetric based imaging. The AOTF devices provide several advantages including speed and random access to desired spectral bands and enable all-solid-state operation that are attractive for space applications. In this paper, the performance of Tellurium Dioxide (TeO 2 ) and Mercurous Bromide (Hg 2 Br 2 ) AOTF devices in space environment carried out under the NASA’s Materials International Space Station Experiments 11 (MISSE-11) mission is discussed. The purpose of the MISSE-11 mission was to study materials and devices subjected to space conditions for long term while attached to the International Space station (ISS). The TeO 2 AOTF was developed for short wavelength IR (SWIR) operation while the Hg 2 Br 2 AOTF device was developed for long wavelength IR (LWIR) operation. These devices were attached to the ISS platform for more than a year. Pre-flight and post-flight performance characterization were performed on these devices. In the case of TeO 2 AOTF, the preflight efficiency was around 87% with a center frequency at 68MHz while the post-flight efficiency was around 83%. However, the optical transmission of Hg 2 Br 2 AOTF had deteriorated considerably. The details of performance testing and analysis of both AOTF devices are discussed.

Space Qualification↗

NASA NTRS1976

Television cameras employing solid-state imaging sensors for manned spacecraft applications

The Space Shuttle television system incorporates a versatile complement of TV equipment which allows the positioning, quantity, and performance capabilities of the multiple TV cameras to vary as dictated by the particular mission. However, current TV camera technology employing glass enclosed, vacuum processed image sensors results in a bulky device that restricts its location and versatility. Problems and potential solutions that can be achieved through the employment of solid-state image sensors for both monochrome and color applications are discussed.

Embrey, B. C., Jr.↗

NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗

DOE OSTI2026

Self-Cooling Multiferroic Magnetic Devices

Increasing switching frequency reduces magnetic volume, but conventional ferrites, used from tens to hundreds of kilohertz, cannot sustain the temperature and frequency ranges demanded by current and emerging wide bandgap and ultrawide bandgap devices. Here, this work presents a novel magnetic material architecture combining nanocrystalline magnetic material and multiferroic layers for megahertz power conversion. The high saturation flux density of nanocrystalline alloys supports miniaturization but is traditionally constrained by excessive losses above 10 kHz. A revolutionary multiferroic material with solid-state cooling via caloric materials is defined that will enable the next generation of magnetic devices for wide-bandgap-integrated designs. This letter highlights the fundamental physics behind this capability alongside early development of a finite element analysis for the multiferroic-based magnetic device using ANSYS, showing that the core achieves more uniform thermal distribution and reduces peak temperature by 9 ° C compared to conventional ferrites.

Soft magnetic materials↗

NASA NTRS1996

Solid State Research

This report covers in detail the research work of the Solid State Division at Lincoln Laboratory for the period 1 May - 31 July 1996. The topics covered are Electrooptical Devices, Quantum Electronics, Materials Research, Submicrometer Technology, High Speed Electronics, Microelectronics, and Analog Device Technology. Funding is provided primarily by the Air Force, with additional Support provided by the Army, DARPA, Navy, BMDO, NASA, and NIST.

SOLID STATE PHYSICS↗

NASA NTRS2002

Hydrogen generation by electrolysis of aqueous organic solutions

A device for electrolysis of an aqueous solution of an organic fuel. The electrolyte is a solid-state polymer membrane with anode and cathode catalysts on both surfaces for electro-oxidization and electro-reduction. A low-cost and portable hydrogen generator can be made based on the device with organic fuels such as methanol.

Narayanan, Sekharipuram R.↗

NASA NTRS2002

Hydrogen generation by electrolysis of aqueous organic solutions

Narayanan, Sekharipuram R.↗

NASA NTRS2006

Hydrogen generation by electrolysis of aqueous organic solutions

Narayanan, Sekharipuram R.↗

NASA NTRS1995

Simulation of 100-300 GHz solid-state harmonic sources

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

NONLINEAR CIRCUITS↗

NASA NTRS2023

Toward Accurate Thermal Modeling of Phase Change Material Based Photonic Devices

Reconfigurable or programmable photonic devices are rapidly growing and have become an integral part of many optical systems. The ability to selectively modulate electromagnetic waves through electrical stimuli is crucial in the advancement of a variety of applications from data communication and computing devices to environmental science and space explorations. Chalcogenide-based phase change materials (PCMs) are one of the most promising material candidates for reconfigurable photonics due to their large optical contrast between their different solid-state structural phases. Although significant efforts have been devoted to accurate simulation of PCM-based devices, in this paper, we highlight three important aspects which have often evaded prior models yet having significant impacts on the thermal and phase transition behavior of these devices: the enthalpy of fusion, the heat capacity change upon glass transition, as well as the thermal conductivity of liquid-phase PCMs. We further investigated the important topic of switching energy scaling in PCM devices, which also helps explain why the three above-mentioned effects have long been overlooked in electronic PCM memories but only become important in photonics. Our findings offer insight to facilitate accurate modeling of PCM-based photonic devices and can inform the development of more efficient reconfigurable optics.

Phase change materials↗

DOE OSTI2025

Cracking the failure of lithium batteries

Lithium batteries that use a solid electrolyte have the potential to improve safety and increase the amount of stored energy . This makes solid-state electrochemical cells a promising option for electric vehicles and wearable devices. However, nonuniform plating or stripping of lithium at the interface between an anode (negative electrode) and the electrolyte during charging and discharging leads to growth of detrimental lithium filaments (dendrites) that short-circuit the battery cell. This problem even occurs when the battery operates at small currents. The underlying mechanism of this failure is not well understood. On page 311 of this issue, Wang et al. (1) report that structural defects accumulate in the lithium metal anode under repeated charging and discharging at a small current. This is similar to mechanical fatigue that is observed over longer periods of intermittent straining of a material. Here, the observation could guide the design of lithium batteries with increased life span.

25 ENERGY STORAGE↗

NASA NTRS1979

Report of the Attitude Control and Attitude Determination Panel

Failures and deficiencies in flight programs are reviewed and suggestions are made for avoiding them. The technology development problem areas considered are control configured vehicle design, gyros, solid state star sensors, control instrumentation, tolerant/accomodating control systems, large momentum exchange devices, and autonomous rendezvous and docking.

Source record↗

NASA NTRS1980

Eight microprocessor-based instrument data systems in the Galileo Orbiter spacecraft

Instrument data systems consist of a microprocessor, 3K bytes of Read Only Memory and 3K bytes of Random Access Memory. It interfaces with the spacecraft data bus through an isolated user interface with a direct memory access bus adaptor, and/or parallel data from instrument devices such as registers, buffers, analog to digital converters, multiplexers, and solid state sensors. These data systems support the spacecraft hardware and software communication protocol, decode and process instrument commands, generate continuous instrument operating modes, control the instrument mechanisms, acquire, process, format, and output instrument science data.

Barry, R. C.↗

NASA NTRS1987

Ka-band (32 GHz) spacecraft development plan

A road map for the development of a protoflight 32 GHz spacecraft solid state transmitter is given. The major milestones include the development of device and component technology required for use in the spaceborne experimental and operational transmitter systems. Two experimental spacecraft transmitter systems are envisioned: first, a low power beacon, to determine the performance of a 32 GHz downlink communications system; and second, an array feed, to further verify the results of the first experiment and service as a test bed for technology required for an operational system. The first experiment was proposed to NASA Headquarters for flight aboard the Mars Observer spacecraft with spacecraft integration in early 1989. The second is to be available for integration aboard a spacecraft such as the Comet Rendezvous Asteroid Flyby (CRAF) mission in the 1990 time frame. These experimental systems are to lead to the development of a protoflight transmitter for subsequent spacecraft integration in 1992, the time frame of the Cassini mission to Saturn.

Riley, A. L.↗