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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Ti Capping Layer Effects in Microstructure and Magnetic Properties of Sputter-Deposited FePt Thin Film

Ti/FePt/Fe nano-thin films were fabricated by a DC facing-target magnetron sputtering method onto glass substrates at room temperature and were subsequently annealed in situ in vacuum. The impacts of the Ti capping layer on microstructural and magnetic properties of the FePt films were investigated in detail. X-ray diffraction (XRD) patterns demonstrate that the film is deposited onto glass substrates and the addition of a Ti layer forms ternary TiFePt, and binary PtTi and FeTi alloys. The results reveal refined granularity, decreased roughness, and enhanced coercivity and degree of squareness after the introduction of a Ti capping layer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Double Hard Axes of Hysteresis Loop in Wide-Angle Obliquely Sputtered CoFeB Amorphous Films

Soft magnetic Co{sub 40}Fe{sub 40}B{sub 20} films with different tilt angle were successfully deposited on silicon substrates by using oblique sputtering technique. Different oblique angles are achieved by controlling the position of samples. The corresponding static magnetic properties of these samples were then systematically investigated. Interestingly, with the oblique angle increasing from 38° to 55°, the MOKE hysteresis loop of the thin films displays a unique and special performance with double hard axes. Meanwhile, despite of the measurement magnetic field along PR or AR direction, both of the hysteresis loops have two-stage magnetization reversal that means there are two comparably strong anisotropies in the CoFeB films. Moreover, rotating samples from in-plane to out-of-plane, the hysteresis loops demonstrate the perpendicular anisotropy exist in CoFeB films. The cross-section SEM characterizations further verify that the residual field from the magnetic cylinder will strongly impact the microstructures of thin film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Magnetic and Magnetotransport Characteristics of Cr-Substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Thin Films Grown by Magnetron Sputtering

Highly oriented Cr-substituted Ni{sub 55}Mn{sub 34}Sn{sub 11} Heusler thin films having thickness ~ 400 nm were deposited by Ultrahigh vacuum dc magnetron sputtering on MgO (100) substrates. At room temperature, the films exhibit a mixture of dominant L2{sub 1} cubic austenite phase, as revealed by the intense (002) and (004) peaks, along with small fraction of the orthorhombic–martensitic phase. Surface morphology of the thin films showed distribution of Cr-rich and Cr-deficit regions together with patterned and aligned magnetic domains, thus bringing out the inherent room temperature ferromagnetism of the film. At temperatures above the Curie temperature, T{sub C} ~ 321 K, the magnetic behaviour of the films is seen to follow the Curie law rather than the Curie–Weiss law. Ferromagnetic to antiferromagnetic transition appears at T{sub N} ~ 247 K, which gives rise to exchange bias at low temperatures due to the coexistence of the two magnetic orders. This phase coexistence also leads to the formation of a spin glass state deep into the martensitic region. The film exhibits metal-like nature at high temperature and semiconductor-like behaviour with the lowering of temperature. A reentrant metallic state is observed at T ≤ 38 K during cooling that persists up to ≤ 62 K in warming cycle. The hysteresis in the ρ–T curve spread over a very wide temperature range confirms the magnetic phase coexistence in the martensitic state in the present thin films. The magnetoresistance (MR) first increases (2.4% at 300 K and H = 50 kOe) with temperature and maximizes to around ~ 3.25% at T = 150 K and then starts decreasing. Its value in the glassy state is very small. This shows that a magnetic liquid like state is more conducive to larger MR.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Photocatalytic activity of anatase titanium dioxide nanostructures prepared by reactive magnetron sputtering technique

In this work, nanostructured titanium dioxide (TiO{sub 2}) photocatalysts with high optical and structural homogeneity were successfully synthesized by dc reactive magnetron sputtering technique. The TiO{sub 2} thin films were produced with high structural homogeneity without any heat treatment. Analysis of the X-ray diffraction patterns and UV–visible spectroscopy gave an indication that the structure of prepared films is anatase with energy band gap of 3.23 eV. The Fourier-transform infrared spectroscopy has confirmed the formation of Ti–O bond. The average size of TiO{sub 2} particles in the deposited films was ranging in 5–7 nm. These nanostructures are very applicable as photocatalysts as their photocatalytic activity was determined from the degradation rate with UV irradiation time as the first order reaction rate constant was determined to be 2.4 × 10{sup −3} min{sup −1}.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Physical properties of RF magnetron sputtered GaN/n-Si thin film: impacts of RF power

GaN thin film was successfully produced on n-Si(100) substrate by RF magnetron sputter under different RF power. Experimental measurement techniques such as UV/Vis spectroscopy, field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and Micro-Raman Spectroscopy were used to research effects of Radio Frequency power on physical properties of produced thin film. It has been found that produced thin film was polycrystalline structure with (100) and (110) planes of hexagonal GaN from X-ray diffraction measurement result. It also proved that increasing RF power gives rise to deterioration in crystal quality of GaN thin film. Reason of this deterioration was discussed. It has been achieved that increasing RF power has resulted in decreasing optical band gap energy of GaN thin film. Reasons for these changes in optical band gap energy were explained. It was seen that some thin films were grown as layer-plus-island mode (Stranski–Krastanov growth mode) and others were grown as layer-by-layer growth mode (Frank van der Merwe mode) from AFM analysis. It has been found that increasing RF power has resulted in improvement of surface morphology of thin film from field emission scanning electron microscopy analysis. However, reaching RF power to 125 W leads to start to deteriorate of surface of GaN thin film. The reasons for this have been discussed. E{sub 1}(TO) transverse optical phonon mode of hexagonal GaN with different intensity was detected from Micro-Raman Spectroscopy measurement. The reasons for this difference have been discussed. It was concluded that RF power has played a significant role in growing high quality GaN thin film. Morphological, structural, and optical properties of GaN thin film were enhanced by controlling RF power, making them a potential candidate for LED, solar cell, diode application.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Effects of growth temperatures on the structural and optoelectronic properties of sputtered zinc sulfide thin films for solar cell applications

The role of various substrate temperatures on the structural and optoelectronic properties of sputtered zinc sulfide (ZnS) thin films has been investigated in this work. The study of prepared film characterization has been done by XRD, AFM, UV–Vis spectrometry and Hall-effect measurement analysis. XRD patterns of the room temperature grown films reveal an amorphous nature, while the films deposited at 100 °C, 200 °C. 300 °C and 400 °C are found to be polycrystalline having the (111) preferential orientation. The optical bandgap values are found in the range of 3.18–3.61 eV depending on the substrate temperatures. The bulk and surface carrier densities are found in the order of 10{sup 12} cm{sup −3} and 10{sup 7} cm{sup −3}, respectively. The growth temperatures are also observed to have a significant effect on the electrical characteristic of the deposited films.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Evaluation of optical parameters and characterization of few layer sputtered MoS{sub 2} film by spectroscopic ellipsometry

The study involves spectroscopic ellipsometry analysis of sputter deposited few layer MoS{sub 2} grown on three different substrates (ITO coated glass, n-silicon and p-silicon) for diverse deposition time. We have investigated optical parameters such as refractive index, extinction coefficient and dielectric constant of MoS{sub 2} layers in the visible region of electromagnetic spectrum. For such purpose of investigation we have involved Cauchy dispersion model (for the film deposited on n-silicon and p-silicon) and hybrid of Lorentz and Drude model (for the film deposited on ITO coated glass). Furthermore, comparative analysis at the diverse growth time of 5, 10, 15 and 20 min has been performed on the basis of optical parameters and surface morphology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Role of oxygen concentrations on structural and optical properties of RF magnetron sputtered ZnO thin films

We report an investigation on the effect of oxygen flow rate on the structural and optical properties of zinc oxide thin films prepared by RF magnetron sputtering. The structural measurements were carried using grazing incidence X-ray diffraction, atomic force microscopy and Raman spectroscopy. The role of oxygen partial pressure on the crystallinity, the surface morphology and vibrational modes has been established. The optical properties of the films were investigated using FR-Basic-VIS/NIR fitted with FR-Monitor software for film thickness, refractive index and color determination. The film thickness is observed to increase when oxygen is introduced at 4 sccm but eventual decrease with increase in the flow rate an indication of initial increase in rate of deposition followed by reduction. Elaborate explanations of these trends are provided.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Preparation and Oxidation Performance of a NiCoCrAlYSiHf + NiAl Composite Coating Deposited by Arc Ion Plating and Magnetron Sputtering Techniques

A NiCoCrAlYSiHf+NiAl composite coating was deposited onto a second-generation single-crystal superalloy René N5 by methods of arc ion plating and magnetron sputtering. After vacuum annealing, the composite coating exhibited a gradient distribution of elements, in which Al was enriched in outer layer and Cr was enriched in inner layer. Compared with conventional NiCoCrAlYSiHf and β-NiAl coatings, the composite coating was evaluated in isothermal and cyclic oxidation tests at 1100 °C in ambient air. The results showed that the oxidation rate of the composite coating was lower than that of NiCoCrAlYSiHf coating. Meanwhile, the extent of interdiffusion between coating and substrate in the composite coating was slighter compared with that in the β-NiAl coating. Microstructure evolutions of the composite coating after annealing and further oxidation test are investigated.

36 MATERIALS SCIENCE↗
DOE OSTI2020

X-ray photoelectron spectroscopy and rotating disk electrode measurements of smooth sputtered Fe-N-C films

Electrocatalysts for the oxygen reduction reaction (ORR) based on complexes of iron and nitrogen in a carbon matrix (Fe-N-C) are a promising alternative to platinum group metal (PGM) based catalysts in polymer electrolyte membrane (PEM) fuel cells. Further improvements of Fe-N-C catalysts would benefit from model thin film studies of activity and stability of catalytic sites, but synthesis of Fe-N-C model thin films is challenging. Here we report on synthesis and characterization of Fe-N-C thin films produced by co-sputtering iron and carbon in a reactive nitrogen atmosphere onto removable glassy carbon rotating disk electrode (RDE) tips. Scanning electron microscopy (SEM) measurements indicate that the Fe-N-C films deposited at high temperature are smoother than the films annealed at high temperature. Electrocatalytic activity measured on the thin Fe-N-C films is greater for both high-temperature samples than for the room-temperature sample. From the analysis of X-ray photoelectron spectroscopy (XPS) data, exposure of the films to high temperatures results in increased graphitization of the carbon with the Fe-N-C films, and increased relative amount of graphitic and hydrogenated nitrogen species. Overall the results of this study demonstrate the feasibility of a thin film model system approach for studying active sites in PGM-free catalysts.

14 SOLAR ENERGY↗
DOE OSTI2021

Properties of Nb3Sn films fabricated by magnetron sputtering from a single target

Superconducting Nb3Sn films were fabricated on sapphire and fine grain Nb substrates by magnetron sputtering from a single stoichiometric Nb3Sn target. The structural, morphological and superconducting properties of the films annealed for 24 h at temperatures of 800-1000 {\deg}C were investigated. The effect of the annealing time at 1000 {\deg}C was examined for 1, 12, and 24 h. The film properties were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The DC superconducting properties of the films were characterized by a four-point probe measurement down to cryogenic temperatures. The RF surface resistance of films was measured over a temperature range of 6-23 K using a 7.4 GHz sapphire-loaded Nb cavity. As-deposited Nb3Sn films on sapphire had a superconducting critical temperature of 17.21 K, which improved to 17.83 K when the film was annealed at 800 {\deg}C for 24 h. For the films annealed at 1000 {\deg}C, the surface Sn content was reduced to ~11.3 % for an annealing time of 12 h and to ~4.1 % for an annealing time of 24 h. The Raman spectra of the films confirmed the microstructural evolution after annealing. The RF superconducting critical temperature of the as-deposited Nb3Sn films on Nb was 16.02 K, which increased to 17.44 K when the film was annealed at 800 {\deg}C for 24 h.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Structural and superconducting properties of Nb 3 Sn films grown by multilayer sequential magnetron sputtering

Nb 3 Sn thin films are fabricated by sequential sputtering followed by annealing at 850–1200°C in vacuum. The effects of the annealing temperature and time on the formation of Nb 3 Sn were examined. The film crystal structure, morphology, surface topography and composition were distinguished by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, and energy dispersive X-ray spectroscopy analysis. The superconducting properties of the films were characterized by measuring the surface resistivity by the four-point probe method. The highest critical temperature T c = 17.86 K was observed for the Nb 3 Sn films annealed at 950°C for 3 h. When the films were annealed above 1000°C for 3 h, Sn evaporation resulted in a Nb-rich film, degrading the superconducting performance. Annealing at 1200°C for 3 h resulted in evaporation of Sn leaving less than 1% Sn on the surface, as detected by energy dispersive spectroscopy, and for that film a T c of 7.9 K was observed.

36 MATERIALS SCIENCE↗
DOE OSTI2019

10% Efficiency Cu(In,Ga)Se2 Solar Cell with Strongly (220)/(204) Oriented Cu-Poor Absorber Layers Sputtered Using Single Quaternary Target

Cu-poor CIGS thin films were fabricated by RF magnetron sputtering from a single quaternary target with the composition of Cu0.7In0.7Ga0.3Se2, in an effort to improve the cell efficiency of CIGS solar cells. The Cu-poor thin films with the ([Cu]/[In]+[Ga]) composition ratios of 0.70-0.77 were obtained showing that the composition of the target can be transferred to the film. It was also observed that the strongly (220)/(204) preferred orientation appeared at the substrate temperatures higher than 600 degrees C, which is known to be essential for achieving high-quality CIGS solar cells. This result indicates that the Cu-Se compounds present in trace amounts of CIGS films hinder the (112) orientation and promotes the growth of the (220) orientation. As a result, the CIGS absorber layer with the Cu-poor composition and the (220)/(204) preferred orientation exhibited a drastically improved cell efficiency of 10.02%.

14 SOLAR ENERGY↗
DOE OSTI2022

Thin film combinatorial sputtering of Al-Ce alloys: Investigating the phase separation of as-deposited solid solutions and determining the coefficient of thermal expansion

Al x Ce 100–x thin films with a composition range of ~75.0 < x < 99.5 at% (36.5 < x < 97.5 wt%) were synthesized via combinatorial co-sputtering from an Al and an Al 50 Ce 50 target. The crystal structure, phase fraction, film morphology, electrical resistivity, and temperature-dependent coefficients of thermal expansion (CTE) are all correlated to the Al x Ce 100–x composition. The as-deposited films form a metastable solid-solution, and annealing leads to the formation of the thermodynamically stable two-phase system of Al and the α-Al 11 Ce 3 intermetallic. Temperature dependent x-ray diffraction (XRD) reveals that the two phases expand independently of one another, and the thin film Al temperature-dependent CTE is similar to bulk Al. The thin film Al 11 Ce 3 intermetallic phase has a nearly constant CTE of ~1.5 × 10 –5 /°C within the temperature range studied (25–550 °C). To confirm the thin film Al 11 Ce 3 results, bulk stoichiometric Al 11 Ce 3 and +/- 1 wt% Ce samples were prepared and the CTE of each was measured with the same conditions. A Rietveld analysis of the bulk data enabled an estimation of the CTE in each of the 3 orthorhombic lattice parameters, which displayed anisotropic behavior. The thin film and bulk CTE measurements were in very good agreement. Estimations of the temperature dependent CTE of the two-phase alloys are made via the Reuss and Voigt models. Finally, by demonstrating the efficacy of the approach, more complex multi-component rapid materials discovery of low CTE Al-alloys can be pursued via the combinatorial thin film synthesis and XRD measurement.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Length-scale-dependent nanoindentation creep behaviour of Ti/Al multilayers by magnetron sputtering

This study presented length-scale-dependent room temperature creep behaviour of Ti/Al multilayers by nanoindentation. Ti/Al multilayers with individual layer thickness ranging from 10 nm to 250 nm were prepared by a direct current magnetron sputtering method. Microstructural analysis showed that the prepared Ti/Al multilayers were polycrystalline, with strong Ti (0002) and Al (111) texture. Nanoindentation creep tests were performed to examine the time-dependent creep deformation, stress exponent, creep strain rate sensitivity and contact creep compliance of the multilayers at room temperature. It was found that both the maximum creep deformation and the creep strain rate sensitivity increase with an increase in the individual layer thickness, indicating a length-scale-dependent creep behaviour of the Ti/Al multilayers. The values of stress exponent were found to lay in the range of 15.74–61.46, implying that the creep behaviour of the multilayers was controlled by the dislocation creep mechanism. Finally, the contact creep compliances of the Ti/Al multilayers were well modelled by a two-element Kelvin-Voigt model. From this, it was determined that the creep numbers and retardation times increased with increased individual layer thickness.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Correlation between structural and mechanical properties of RF magnetron sputter deposited hydroxyapatite coating

Highlights: • Microstructure and mechanical properties of textured hydroxyapatite (HA) coatings were evaluated. • TEM results revealed two types of coating microstructure corresponding to the film texture. • Elastic performance of the coating was determined by the texture of the HA coating. • HA coating with (300) texture showed larger elastic recovery. - Abstract: In the present study hydroxyapatite (HA) thin films with a,b-plain and c-plain preferential orientation were prepared by means of RF-magnetron sputtering with water vapor addition into a working gas atmosphere to investigate the influence of microstructural features on mechanical performance of the coating at nanoscale. The mechanical properties of the HA coatings textured along a,b- and c-axes by nanoindentation conclusively highlight that elastic modulus, H/E ratio, H{sup 3}/E{sup 2} parameter and percent of elastic recovery are determined by preferential orientation of the film. Nanoindentation reveals that the HA films exhibiting (300) texture possess commensurate nanohardness and lower elastic modulus compared to (002) oriented films, indicating that the former films possess higher resistance to cracking. The (002) and (300) textured coatings exhibited a nanohardness of 4.7 ± 2.0 GPa and 4.4 ± 2.2 GPa, respectively. The elastic modulus of the HA film with (300) and (002) preferential orientation was 75 ± 40 GPa and 103 ± 40 GPa, respectively. The HA coating with (300) texture showed a higher percentage of elastic recovery of 92% within unloading than that of the (002) textured film (69%).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Microstructural evolution and electrical resistivity of nanocrystalline W thin films grown by sputtering

Highlights: • W thin films with thicknesses of 5–40 nm were deposited by sputtering and annealed up to 400°C. • Grain size of the beta (β)-W was about 5 nm, whereas that of the alpha (α)-W was about 130 nm. • Thickness dependent electrical resistivity variations as a function of annealing temperature were presented. - Abstract: Tungsten (W) thin films and nanostructures, particularly those having a beta (β)-phase, have attracted a large amount of attention lately because an ultrathin β-phase W film attached to a ferromagnetic layer can reverse the direction of magnetization upon current injection. However, in-depth microstructural studies including the phase transformation in W films as a function of thickness and post-deposition heat treatment temperature are rare. Here, we report the microstructural evolution and the change in the electrical resistivity of W films with thicknesses of 5–40 nm. Microstructural analyses indicate that the β-W is nanocrystalline with a small grain size of about 5 nm, while the alpha (α)-W has a grain size larger than 130 nm with random crystal orientation. We present a state diagram showing the phase of the W film as functions of film thickness and annealing temperature.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Preparation of ultrathin sputtered gold films on palladium as efficient oxygen reduction electro-catalysts

Herein, we present the preparation of ultrathin gold (Au) films on different M (M = Pd, Pt, Rh, Ir, and Ru) electrodes (Au/M) using magnetron sputtering deposition for oxygen reduction reaction (ORR). The ORR electro-catalytic activities of prepared Au/M catalysts increase as follows: Au/Ru < Au/Ir < Au/Rh < Au/Pt < Au/Pd. Accordingly, the oxygen reduction catalytic behaviors of the Au-modified palladium (Au/Pd) thin films with various Au thicknesses (0.16, 0.24, 0.5, and 1 nm) are investigated in acidic environments. It is found that Au modifications can promote oxygen reduction performances due to the development of more catalytic active sites on the Pd catalyst through the existence of Au atoms. Noticeably, Au/Pd samples exhibit a connection in oxygen reduction ability as a function of Au thickness, with the ultrathin 0.16 nm Au/Pd being the most active ORR catalyst. Significantly, the 0.16 nm Au/Pd material demonstrates superior stability after 1000 potential cycles compared with the 0.16 nm Pt/Pd owing to the influence of Au coating and structurally stable surfaces. Therefore, surface modification with the deposition of Au films on Pd represents a favorable technique to boost both the ORR capability and stability of the electro-catalysts.

Magnetron sputtering↗