Calculation of the conduction band discontinuity for Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As heterojunction
Photoluminescence studies at 4 K on Ga(0.47)In(0.53)As/Al(0.48)In(0.52)As single quantum wells exhibit emission ranging from 1.318 eV for a 15-A well to 0.82 eV for thick wells. The emission energy of each single quantum well is compared to theoretical curves which are generated from a finite potential square well model. The closest agreement between the experimental curves and the theoretical curves occurs when the conduction band discontinuity is taken to be 70 percent of the bandgap discontinuity or 0.52 eV.