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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23

Pulsed Molecular Beams For Growth Of InAs On GaAs

Pauses for annealing reduce number of defects. Deposition process that includes pulsed molecular beams produces high-quality epitaxial layers of indium arsenide on gallium arsenide substrates. Layers made as much as 30 atoms thick without introducing excessive numbers of dislocations, despite 7.4-percent mismatch between InAs and GaAs crystal lattices. Layers offer superior electrical properties in such devices as optically addressed light modulators, infrared sensors, semiconductor lasers, and high-electron-mobility transistors. Technique applicable to other epitaxial systems in which lattices highly mismatched.

Grunthaner, Frank J.↗

Probing the role of local tunnel variations in early-stage lithiation of α-MnO₂ nanowires via in situ TEM

Understanding lithium-ion transport in tunnel-structured manganese oxides is essential for designing high-performance lithium-ion battery electrode materials. Here, we elucidate the early-stage lithiation mechanism of potassium-stabilized α-MnO 2 nanowires using in situ transmission electron microscopy (TEM) coupled with electron energy-loss spectroscopy (EELS), high-resolution TEM (HRTEM), and geometric phase analysis (GPA). Real-time TEM imaging reveals clear volume expansion at the reaction front, while EELS analysis uncovers lithium-ion diffusion far beyond this region, where no visible expansion is observed, indicating fast, defect-assisted transport. GPA and HRTEM analyses show that localized tensile and compressive strain fields, originating from pre-existing local tunnel structural variations, persist after lithiation. The tensile-strained regions enable lithium-ion insertion with minimal lattice distortion, offering additional free volume that facilitates rapid lithium-ion accommodation ahead of the structural transformation. Our results demonstrate a local tunnel variation-mediated fast diffusion pathway that precedes bulk reaction, underscoring the critical role of local strain in enabling early-stage lithium transport. Given the structural versatility of MnO 2 and its ability to accommodate diverse atomic arrangements beyond the well-known tunnel phases (β-, γ-, δ-, λ-, R-phases), our findings highlight the importance of understanding and engineering local structural environments. This work provides fundamental insights into the interplay between defects, strain, and ion dynamics, and presents defect engineering as a promising approach to enhance both rate performance and structural stability in manganese-based cathodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A Scalable & Non-Destructive Characterization Strategy to Study Semiconductor/Dielectric Interfaces and Predict Wafer-Level Device Performance

The defect density present at the dielectric-semiconductor interface in an MOS structure directly influences the channel carrier characteristics in semiconductor devices, especially in wide bandgap material systems used in power devices. While these trap defects are typically quantified through electrical characterization of MOS-capacitor test structures, this treatment offers very little insight into the physical nature of interface defects. Such shortcomings demand a physical characterization strategy to guide fabrication optimization. X-ray photoelectron spectroscopy (XPS) is suggested as a viable technique to determine chemical data for dielectric interfaces formed using atomic layer deposition (ALD) on GaN substrates. Previously, 1-D XPS characterization has confirmed the presence of a Ga x O y interlayer between ALD dielectrics and the GaN substrate. In this work, XPS data is serially collected to form 2-D images of an ALD-Al 2 O 3 /GaN interface as a proof-of-concept experiment for in-situ XPS quality monitoring during ALD processing. The information provided by this work reveals some of the challenges for incorporating XPS characterization as an in-situ strategy during fabrication of GaN-based devices. Separately, electrical mapping of a 2-D array of ALD-Al 2 O 3 /GaN MOS-capacitor devices provide a means to quantify the spatial variations in interface quality across a single wafer. Physical characterization techniques, such as time-of-flight secondary ion mass spectroscopy, provide additional chemical information about the Al 2 O 3 /Ga x O y /GaN structure that complement the electrical mapping results. This analysis shows that a higher Ga x O y content correlates with higher interface state defects for trap energies deep in the band gap.

42 ENGINEERING↗

Harnessing Chemical Short‐Range Disorder to Improve Lithium Retention in Epitaxial LLTO Solid‐Electrolyte Thin Films

Lithium lanthanum titanate Li 3x La 2/3-x TiO 3 (LLTO) is a promising perovskite-based solid-state electrolyte for next-generation lithium-ion batteries, but controlling crystallinity and Li stoichiometry in thin-film form is challenging because high growth temperatures are required to achieve good crystallinity while Li remains strongly volatile. Here, we systematically investigate the effect of substrate temperature on epitaxial LLTO thin films grown by pulsed laser deposition. We identify a narrow growth window (750–800°C) in which LLTO films grow as c-axis oriented with atomically flat surfaces. Lower growth temperatures (<750°C) stabilize laterally extended, chemically disordered stripe domains that coexist with ordered LLTO regions, whereas higher temperatures (≥825°C) suppress these defects but promote island morphologies and Al/Ti interdiffusion. While spectroscopy measurements show that Ti remains in the 4+ oxidation state and Li is globally deficient for all films, our depth-resolved time-of-flight secondary ion mass spectrometry studies reveal that the 700°C film retains the highest Li content across its thickness. These results clarify how growth temperature controls crystallinity, chemical short-range disorder, and Li retention, and highlight moderate growth temperatures (∼700°C) as a route to mitigate Li loss in epitaxial solid-electrolyte films.

chemical short-range disorder↗

BFS Method for Alloys Optimized and Verified for the Study of Ordered Intermetallic Material

The aerospace industry has a need for new metallic alloys that are lightweight and have high strength at elevated temperatures. The BFS (Bozzolo, Ferrante, and Smith) method is a new, computationally efficient and physically sound quantum semi-perturbative approach for describing metals and their defects. Based on a simple interpretation of the alloy formation process that identifies strain and chemical contributions to the energy of the alloy, the method provides an atom-by-atom description of an alloy. Its implementation requires little more than algebra and the solution of transcendental equations. At the NASA Lewis Research Center, we have demonstrated that BFS can investigate the properties of a large number of alloys with a minimum computational effort on low-level computers. This screening allows the selection of the best alloy candidates for a particular application and, therefore, promises large cost savings over current approaches.

Source record↗

Complexions at the iron-magnetite interface

Synthesizing distinct phases and controlling crystalline defects are key concepts in materials design. These approaches are often decoupled, with the former grounded in equilibrium thermodynamics and the latter in nonequilibrium kinetics. By unifying them through defect phase diagrams, we can apply phase equilibrium models to thermodynamically evaluate defects—including dislocations, grain boundaries, and phase boundaries—establishing a theoretical framework linking material imperfections to properties. Using scanning transmission electron microscopy (STEM) with differential phase contrast (DPC) imaging, we achieve the simultaneous imaging of heavy Fe and light O atoms, precisely mapping the atomic structure and chemical composition at the iron-magnetite (Fe/Fe 3 O 4 ) interface. We identify a well-ordered two-layer interface-stabilized phase state (referred to as complexion) at the Fe[001]/Fe 3 O 4 [001] interface. Using density-functional theory (DFT), we explain the observed complexion and map out various interface-stabilized phases as a function of the O chemical potential. The formation of complexions increases interface adhesion by 20% and alters charge transfer between adjacent materials, impacting transport properties. Our findings highlight the potential of tunable defect-stabilized phase states as a degree of freedom in materials design, enabling optimized corrosion protection, catalysis, and redox-driven phase transitions, with applications in materials sustainability, efficient energy conversion, and green steel production.

36 MATERIALS SCIENCE↗

MISSE Results Used for RF Plasma Ground Testing-To-Space-Exposure Correlation for Coated Kapton

The ability to predict the durability of materials in the low Earth orbit (LEO) environment by exposing them in ground-based facilities is important because one can achieve test results sooner, expose more types of materials, and do it much more cost effectively than to test them in flight. However, flight experiments to determine the durability of groups or classes of materials that behave similarly are needed in order to provide correlations of how much time in ground-based facilities represents certain durations in LEO for the material type of interest. An experiment was designed and flown on the Materials International Space Station Experiment (MISSE) 2 (3.95 yr in LEO) and MISSE 4 (1.04 yr in LEO) in order to develop this type of correlation between ground-based RF plasma exposure and LEO exposure for coated Kapton. The experiment consisted of a sample of Kapton H (DuPont) polyimide coated with 1300 of silicon dioxide by Sheldahl, Inc. The samples were exposed to atomic oxygen in a radio frequency (RF) generated atomic oxygen plasma. Mass change was measured for the samples and then the same samples were exposed in flight on MISSE and the mass change was again recorded post-flight. After documentation, the samples were exposed again in the ground-based RF plasma in order to determine if the erosion would be the same as it had been in the same facility pre-flight which would indicate whether or not the sample had been damaged during flight and if the defects on the surface were those that were there preflight. The slopes of the mass change versus fluence plots were then used to develop a correlation factor that can be used to help predict the durability of coated Kapton in ground-based isotropic atomic oxygen plasma systems. This paper describes the experiment and presents the correlation factor results.

Miller, Sharon K. R.↗

Structure Sensitivity and Catalyst Restructuring for CO2 Electro-reduction on Copper

Abstract Cu is the most promising metal catalyst for CO 2 electroreduction (CO 2 RR) to multi-carbon products, yet the structure sensitivity of the reaction and the stability versus restructuring of the catalyst surface under reaction conditions remain controversial. Here, atomic scale simulations of surface energies and reaction pathway kinetics supported by experimental evidence unveil that CO 2 RR does not take place on perfect planar Cu(111) and Cu(100) surfaces but rather on steps or kinks. These planar surfaces tend to restructure in reaction conditions to the active stepped surfaces, with the strong binding of CO on defective sites acting as a thermodynamic driving force. Notably, we identify that the square motifs adjacent to defects, not the defects themselves, as the active sites for CO 2 RR via synergistic effect. We evaluate these mechanisms against experiments of CO 2 RR on ultra-high vacuum-prepared ultraclean Cu surfaces, uncovering the crucial role of step-edge orientation in steering selectivity. Overall, our study refines the structural sensitivity of CO 2 RR on Cu at the atomic level, highlights the self-activation mechanism and elucidates the origin of in situ restructuring of Cu surfaces during the reaction.

Science & Technology - Other Topics↗

Strontium‐Enriched Barite for Enhanced PbSO 4 Nucleation in Lead‐Acid Batteries

Abstract Barite (BaSO 4 ) crystals are an important additive in lead acid batteries due to their ability to promote the controlled nucleation and growth of anglesite (PbSO 4 ) during battery cycling. This is due to BaSO 4 ’s isostructural match with PbSO 4 , which facilitates epitaxial nucleation. However, BaSO 4 ’s efficacy as a nucleation promoter is limited by lattice mismatches between the two phases of 1–5%. Here, strontium‐enriched barite, (Ba,Sr)SO 4 , is synthesized to produce a nucleating promoter that displays an improved lattice match with PbSO 4 . Nucleation of PbSO 4 from Pb‐rich sulfuric acid solutions on strontium‐free and strontium‐enriched barite (up to 17 mol% Sr) is investigated using in‐situ atomic force microscopy and optical microscopy. At low strontium concentrations, PbSO 4 forms by the Stranski–Krastanov growth pathway (monolayer + island formation), with most nucleation occurring on edges and surface defects. At higher concentrations, the layer‐by‐layer growth mechanism known as Frank van‐der‐Merwe growth is observed, which allows for facile growth of continuous PbSO 4 films across the BaSO 4 surface. These films are successfully re‐dissolved on exposure to Pb‐free sulfuric acid. The results show that strontium incorporation fundamentally alters the mechanism of PbSO 4 nucleation on BaSO 4 , and thus provides a potential avenue for creating improved nucleation promoters in lead‐acid batteries.

Campbell, Colin T. [Pacific Northwest National Lab↗

Predicting Atomistic Transitions with Transformers

Accurate knowledge of the atomistic transition pathways in materials and material surfaces is crucial for many material science problems. However, conventional simulation techniques used to find these transitions are extremely computationally intensive. Even with large-scale, accelerated material simulations, the computational cost constrains the applicable domain in practice. Machine learning models, with the potential to learn the complex emergent behaviors governing atomistic transitions as a fast surrogate model, have great promise to predict transitions with a vastly reduced computational cost. Here, we demonstrate how transformers can be trained to predict atomistic transitions in nano-clusters. We show how we evaluate physical validity of the predictions and how a multitude of additional, different microstates can be generated by slightly varying the data provided to the model.

36 MATERIALS SCIENCE↗

Atomic-Scale Insights into Carbon Dissolution in α-, γ-, and θ-Al 2 O 3 : Phase-dependent Transport Dynamics from First-Principles Calculations

α-Al 2 O 3 exhibits superior carburizing corrosion resistance compared to metastable γ-Al 2 O 3 and θ-Al 2 O 3 phases in high-temperature CO 2 environments, yet its atomic-scale origins remain unclear. Using first-principles density functional theory, we systematically investigate carbon dissolution and diffusion in α-Al 2 O 3 , γ-Al 2 O 3 , and θ-Al 2 O 3 , including the effects of oxygen (O) and aluminum (Al) vacancies. Our results show that α-Al 2 O 3 consistently exhibits higher carbon solution enthalpies than γ-Al 2 O 3 and θ-Al 2 O 3 in both pristine and defective structures, indicating lower intrinsic carbon solubility in α-Al 2 O 3 . Vacancies significantly enhance carbon incorporation: O vacancies reduce solution enthalpy, while Al vacancies further amplify this effect, with a strong preference for carbon at Al vacancy sites. Carbon diffusion barriers are also highest in α-Al 2 O 3 , reflecting slower carbon mobility. Al vacancies increase diffusion barriers across all phases, while O vacancies raise barriers in α- and γ-Al 2 O 3 but slightly lower them in θ-Al 2 O 3 . These results reveal a dual mechanism behind the carburizing resistance of α-Al 2 O 3 : reduced carbon solubility and elevated diffusion barriers. Furthermore, this work provides atomic-scale insights to guide the design of alumina-based materials with improved carburizing resistance through phase selection and defect engineering.

36 MATERIALS SCIENCE↗

Revealing Local Structures through Machine-Learning-Fused Multimodal Spectroscopy

Atomistic structures of materials offer valuable insights into their functionality. Determining these structures remains a fundamental challenge in materials science, especially for systems with defects. While both experimental and computational methods exist, each has limitations in resolving nanoscale structures. Core-level spectroscopies, such as X-ray absorption (XAS) or electron energy-loss spectroscopies (EELS), have been used to determine the local bonding environment and structure of materials. Recently, machine learning (ML) methods have been applied to extract structural and bonding information from XAS/EELS data. However, frameworks relying solely on a single data stream, defined as characterization data derived from a single element using one technique, are often insufficient because multiple local environments can yield similar spectral features, making it challenging to differentiate between competing structural hypotheses. Here, in this work, we address this challenge by integrating multimodal ab initio simulations, experimental data acquisition, and ML techniques for structure characterization. Our goal is to determine local structures and properties using EELS and XAS data from multiple elements and edges. To showcase our approach, we use various lithium nickel manganese cobalt (NMC) oxide compounds which are used for lithium ion batteries, including those with oxygen vacancies and antisite defects, as the sample material system. We successfully inferred local element content, ranging from lithium to transition metals, with quantitative agreement with experimental data. Beyond local element inference, we find that ML model based on multimodal spectroscopic data is able to determine whether local defects such as oxygen vacancy and antisites are present, a task which is impossible for single mode spectra or other experimental techniques. Furthermore, our framework is able to provide physical interpretability, bridging spectroscopy with the local atomic and electronic structures.

battery↗

Score-based denoising for atomic structure identification

We propose an effective method for removing thermal vibrations that complicate the task of analyzing complex dynamics in atomistic simulation of condensed matter. Our method iteratively subtracts thermal noises or perturbations in atomic positions using a denoising score function trained on synthetically noised but otherwise perfect crystal lattices. The resulting denoised structures clearly reveal underlying crystal order while retaining disorder associated with crystal defects. Purely geometric, agnostic to interatomic potentials, and trained without inputs from explicit simulations, our denoiser can be applied to simulation data generated from vastly different interatomic interactions. The denoiser is shown to improve existing classification methods, such as common neighbor analysis and polyhedral template matching, reaching perfect classification accuracy on a recent benchmark dataset of thermally perturbed structures up to the melting point. Demonstrated here in a wide variety of atomistic simulation contexts, the denoiser is general, robust, and readily extendable to delineate order from disorder in structurally and chemically complex materials.

36 MATERIALS SCIENCE↗

Physics of wurtzite ferroelectrics

Ferroelectricity was long considered incompatible with the wurtzite structure, but the recent discovery of switchable polarization in wurtzite alloys has renewed interest in these materials for integrated electronic and memory applications. The development of wurtzite ferroelectrics faces significant technological challenges, which can be addressed through a fundamental physical understanding of their dielectric and ferroelectric properties. This article focuses on the physics that govern the polarization switching behavior, emphasizing the atomic- and meso-scale (domain) mechanisms involved in the transition between polarization states. A distinguishing feature of this article is a deep dive into the role of intrinsic and extrinsic defects—an area that has received limited attention in prior reviews, but is increasingly recognized as central to polarization switching, coercive fields, leakage, and fatigue. We highlight how defect behavior evolves during processing and electrical cycling, often contributing to long-term degradation. We also introduce powerful first-principles defect calculations, common in semiconductors but not yet widespread in ferroelectrics, as tools to understand and design materials. By integrating recent theoretical and experimental insights, we aim to provide a framework for advancing wurtzite ferroelectrics.

36 MATERIALS SCIENCE↗

Theory of reversible and nonreversible cracks in solids

The Griffith crack theory is reviewed and certain shortcomings of this theory are discussed. A new description for the shape of a crack is given which takes into account the atomic structure of material. Through consideration of the total energy of the system and the shape of the crack, expressions for crack behavior are derived which are considered to remedy the defects of the Griffith theory.

PROPERTIES, MATERIALS - TENSILE↗

Lattice-Renormalized Tunneling Models for Superconducting Qubit Materials

We present a lattice-renormalized formalism for configurational tunneling two-level systems (TLS) that overcomes limitations of minimum-energy-path and light-particle models. Derived from the nuclear Hamiltonian, our formulation introduces composite phonon coordinates to capture lattice distortions between degenerate potential wells. This approach resolves deficiencies in prior models and enables accurate computation of tunnel splittings and excitation spectra for hydrogen-based TLS in bcc Nb. Our results bound experimental tunnel splittings and reveal strong anharmonic couplings between tunneling atoms and lattice phonons, establishing a direct link between TLS dynamics and phonon-mediated strain interactions. The formalism further generalizes to multi-level systems (MLS), providing insight into defect-induced decoherence in superconducting qubits and guiding strategies for materials design to suppress TLS-related loss.

Pritchard, P. G. [Northwestern U.]↗

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗

Investigation of Atomic Oxygen Erosion of Polyimide Kapton H Exposed to a Plasma Asher Environment

Experimental results are presented on the erosion characteristics of the polyimide Kapton H, which serves as a blanket material in solar arrays. This polymer has a number of characteristics that make it a suitable choice for both terrestrial and space applications. In this paper attention is focused on the durability of protected Kapton when exposed to atomic oxygen (AO) in a plasma asher. A strip of 0.025-mm thick Kapton film, coated on both sides with SiO2, was studied during a 1306 hour exposure. The erosion, located at defect sites in the protective coating and measured optically, is described in terms of volume loss as a function of AO fluence. Three simple geometric profiles are used to generate a useful array of cavity shapes to model erosion evolution. These models connect the volume erosion rate to the observed lateral expansion of the developing cavities via their diameters, measured adviacent to the upper and lower protective film, and fitted by least-squares regression to simple power law functions of fluence. The rationale for the choice of models is discussed. It was found that lateral growth in cavity size evolves less than linearly with fluence.

Snyder, Aaron↗