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Results for “electrical doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1970

Current conduction in junction gate field effect transistors

The internal physical mechanism that governs the current conduction in junction-gate field effect transistors is studied. A numerical method of analyzing the devices with different length-to-width ratios and doping profiles is developed. This method takes into account the two dimensional character of the electric field and the field dependent mobility. Application of the method to various device models shows that the channel width and the carrier concentration in the conductive channel decrease with increasing drain-to-source voltage for conventional devices. It also shows larger differential drain conductances for shorter devices when the drift velocity is not saturated. The interaction of the source and the drain gives the carrier accumulation in the channel which leads to the space-charge-limited current flow. The important parameters for the space-charge-limited current flow are found to be the L/L sub DE ratio and the crossover voltage.

Kim, C.↗
NASA NTRS1994

Electrical properties of epitaxial 3C- and 6H-SiC p-n junction diodes produced side-by-side on 6H-SiC substrates

3C-SiC (beta-SiC) and 6H-SiC p-n junction diodes have been fabricated in regions of both 3C-SiC and 6H-SiC epitaxial layers which were grown side-by-side on low-tilt-angle 6H-SiC substrates via a chemical vapor deposition (CVD) process. Several runs of diodes exhibiting state-of-the-art electrical characteristics were produced, and performance characteristics were measured and compared as a function of doping, temperature, and polytype. The first 3C-SiC diodes which rectify to reverse voltages in excess of 300 V were characterized, representing a six-fold blocking voltage improvement over experimental 3C-SiC diodes produced by previous techniques. When placed under sufficient forward bias, the 3C-SiC diodes emit significantly bright green-yellow light while the 6H-SiC diodes emit in the blue-violet. The 6H-SiC p-n junction diodes represent the first reported high-quality 6H-SiC devices to be grown by CVD on very low-tilt-angle (less than 0.5 deg off the (0001) silicon face) 6H substrates. The reverse leakage current of a 200 micron diameter circular device at 1100 V reverse bias was less than 20 nA at room temperature, and excellent rectification characteristics were demonstrated at the peak characterization temperature of 400 C.

EPITAXIAL LAYER↗
NASA NTRS2010

Chemical sensors using coated or doped carbon nanotube networks

Methods for using modified single wall carbon nanotubes ("SWCNTs") to detect presence and/or concentration of a gas component, such as a halogen (e.g., Cl.sub.2), hydrogen halides (e.g., HCl), a hydrocarbon (e.g., C.sub.nH.sub.2n+2), an alcohol, an aldehyde or a ketone, to which an unmodified SWCNT is substantially non-reactive. In a first embodiment, a connected network of SWCNTs is coated with a selected polymer, such as chlorosulfonated polyethylene, hydroxypropyl cellulose, polystyrene and/or polyvinylalcohol, and change in an electrical parameter or response value (e.g., conductance, current, voltage difference or resistance) of the coated versus uncoated SWCNT networks is analyzed. In a second embodiment, the network is doped with a transition element, such as Pd, Pt, Rh, Ir, Ru, Os and/or Au, and change in an electrical parameter value is again analyzed. The parameter change value depends monotonically, not necessarily linearly, upon concentration of the gas component. Two general algorithms are presented for estimating concentration value(s), or upper or lower concentration bounds on such values, from measured differences of response values.

Li, Jing↗
DOE OSTI2020

Comparison of semi-doped PANI/DBSA complex achieved by thermal doping and roll-mill process: A new perspective for application

Conductive polymers have garnered extensive attention over the last few decades owing to their vast applications and relative ease of production. One such polymer is PANI; with versatile thermo-mechanical, chemical, and electrical properties, has been researched for varied applications in the field of electronics, electrodes and corrosion protection. In this study, we focus on an alternative route to process semi-doped PANI/DBSA complexes with special focus on material properties for improved processability. This study investigates the influence of two different material preparation techniques: roll-milling and thermal-doping, on the formability and processability of such polymer-complex systems. Results confirm similar doping levels achieved in both processes and shear-thinning behavior was only observed for roll-milled samples. These results underline the formability of roll-milled PANI/DBSA with thermosetting resins. It essentially explains the production route and offers a perspective for commercial manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Shifting Defect Self-Regulation via Disordered Vacancies in Hollow Tin Perovskites

Tin(II)-based hybrid halide perovskites typically suffer from severe self-doping behavior as a result of facile oxidation of Sn(II) to Sn(IV), leading to high carrier densities (holes) and metallic-like conductivities that limit their applications. In this contribution, we describe how substituting the large ethylenediammonium cation for methylammonium in the intentionally defective “hollow” perovskite family, MA 1−x en x Sn 1−0.7x I 3−0.4x (MA = methylammonium, en = ethylenediammonium), where 0 ≤ x ≤ 0.38, effectively minimizes the intrinsic self-doping behavior. The use of a solvent-free, mechanochemical synthesis route further circumvents oxidative side reactions typical in solution processing, enabling more precise control and understanding of both composition and defect chemistry. Dark and time-resolved microwave conductivity measurements of these materials as a function of “x” reveal two regimes of conductivity suppression: at low x incorporation (x ≤ 0.15), the carrier density decreases by an order of magnitude via defect-mediated charge compensation, while higher substitution (0.15 < x ≤ 0.38) greatly reduces the carrier mobility. At these lower substitution levels, the observations suggest that intrinsic equilibrium tin vacancies are compensated instead by ionic defects in lieu of mobile holes. For the higher substitution levels, the less mobile carriers exhibit long recombination lifetimes, consistent with polaron-mediated transport. These findings establish a strategy for relatively low iodine chemical potential synthesis and defect-driven control of the carrier concentration in tin halide perovskites, advancing the rational discovery of dopable hybrid semiconductors.

36 MATERIALS SCIENCE↗
NASA NTRS2011

Coated or doped carbon nanotube network sensors as affected by environmental parameters

Methods for using modified single wall carbon nanotubes ("SWCNTs") to detect presence and/or concentration of a gas component, such as a halogen (e.g., Cl.sub.2), hydrogen halides (e.g., HCl), a hydrocarbon (e.g., C.sub.nH.sub.2n+2), an alcohol, an aldehyde or a ketone, to which an unmodified SWCNT is substantially non-reactive. In a first embodiment, a connected network of SWCNTs is coated with a selected polymer, such as chlorosulfonated polyethylene, hydroxypropyl cellulose, polystyrene and/or polyvinylalcohol, and change in an electrical parameter or response value (e.g., conductance, current, voltage difference or resistance) of the coated versus uncoated SWCNT networks is analyzed. In a second embodiment, the network is doped with a transition element, such as Pd, Pt, Rh, Ir, Ru, Os and/or Au, and change in an electrical parameter value is again analyzed. The parameter change value depends monotonically, not necessarily linearly, upon concentration of the gas component. Two general algorithms are presented for estimating concentration value(s), or upper or lower concentration bounds on such values, from measured differences of response values.

Li, Jing↗
DOE OSTI2020

Doping CdSexTe1-x/CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics

CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Atomically Dispersed Nickel(I) on an Alloy‐Encapsulated Nitrogen‐Doped Carbon Nanotube Array for High‐Performance Electrochemical CO 2 Reduction Reaction

Abstract Single‐atom catalysts (SACs) show great promise for electrochemical CO 2 reduction reaction (CRR), but the low density of active sites and the poor electrical conduction and mass transport of the single‐atom electrode greatly limit their performance. Herein, we prepared a nickel single‐atom electrode consisting of isolated, high‐density and low‐valent nickel(I) sites anchored on a self‐standing N‐doped carbon nanotube array with nickel–copper alloy encapsulation on a carbon‐fiber paper. The combination of single‐atom nickel(I) sites and self‐standing array structure gives rise to an excellent electrocatalytic CO 2 reduction performance. The introduction of copper tunes the d‐band electron configuration and enhances the adsorption of hydrogen, which impedes the hydrogen evolution reaction. The single‐nickel‐atom electrode exhibits a specific current density of −32.87 mA cm −2 and turnover frequency of 1962 h −1 at a mild overpotential of 620 mV for CO formation with 97 % Faradic efficiency.

Zhang, Tianyu↗
NASA NTRS1993

Synthesis of novel electrically conducting polymers: Potential conducting Langmuir-Blodgett films and conducting polymers on defined surfaces

Based on previous results involving thiophene derived electrically conducting polymers in which it was shown that thiophene, 3-substituted thiophenes, furans, and certain oligomers of these compounds showed electrical conductivity after polymerization. The conductivity was in the order of up to 500 S/cm. In addition, these polymers showed conductivity without being doped and most of all they were practically inert toward ambient conditions. They even could be used in aqueous media. With these findings as a guide, a number of 3-long-chain-substituted thiophenes and 1-substituted-3-long-chain substituted pyrrols were synthesized as monomers for potential polymeric electrically conducting Langmuir-Blodgett films.

Zimmer, Hans↗
DOE OSTI2020

Monolayer Vanadium‐Doped Tungsten Disulfide: A Room‐Temperature Dilute Magnetic Semiconductor

Abstract Dilute magnetic semiconductors (DMS), achieved through substitutional doping of spin‐polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto–electric or magneto–optical devices, especially for two‐dimensional (2D) systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room‐temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here, room‐temperature ferromagnetic order obtained in semiconducting vanadium‐doped tungsten disulfide monolayers produced by a reliable single‐step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation, is described. These monolayers develop p‐type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of ~2 at% and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium–vanadium spacings, as supported by transmission electron microscopy, magnetometry, and first‐principles calculations. Room‐temperature 2D‐DMS provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures into the realm of practical application.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Evaluation of the Improvement in the Figure of Merit of Bi_2Te_3-Based Alloys with Addition of Ultrafine Scattering Centers

The addition of ultrafine scattering centers into Bi_2Te_3-based materials and their impact on the thermal and electrical transport properties in a 200-500 K temperature range are discussed. Based on previous theoretical efforts, the resulting improvements in the figure of merit of these heavily doped thermoelectric semiconductors were calculated as a function of composition, temperature, doping level, particulate size and concentration. Determination of the lattice thermal conductivity of the various alloys was conducted by considering phonon-phonon, carrier-phonon, point defect and inert scattering center scattering mechanisms. Degradation of the electrical properties due to the increase scattering rate was also taken into account. Practical application of these results is considered.

Fleurial, Jean-Pierre↗
DOE OSTI2025

Database of Nonaqueous Proton-Conducting Materials

This work presents the assembly of 48 papers, representing 74 different compounds and blends, into a machine-readable database of nonaqueous proton-conducting materials. SMILES was used to encode the chemical structures of the molecules, and we tabulated the reported proton conductivity, proton diffusion coefficient, and material composition for a total of 3152 data points. The data spans a broad range of temperatures ranging from -70 to 260 °C. To explore this landscape of nonaqueous proton conductors, DFT was used to calculate the proton affinity of 18 unique proton carriers. The results were then compared to the activation energy derived from fitting experimental data to the Arrhenius equation. It was found that while the widely recognized positive correlation between the activation energy and proton affinity may hold among closely related molecules, this correlation does not necessarily apply across a broader range of molecules. This work serves as an example of the potential analyses that can be conducted using literature data combined with emerging research tools in computation and data science to address specific materials design problems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Performance and reliability of β-Ga 2 O 3 Schottky barrier diodes at high temperature

Beta-gallium oxide (ß-Ga 2 O 3 ) is an ultrawide bandgap semiconductor that has potential for power electronic applications and devices operating at high temperatures. Particularly important for these applications are its 4.9 eV bandgap, facile electron doping, and the ability to grow ß-Ga 2 O 3 crystals from the melt. In this work, vertical ß-Ga 2 O 3 Schottky barrier diodes were fabricated using Pt Schottky and Ti-based Ohmic contacts and Au contact pads on unintentionally doped n-type, (2¯01)-oriented single crystal substrates. The diode’s temperature-dependent electrical properties up to 400°C were investigated, and the Pt/Ga 2 O 3 Schottky barrier height was determined to be close to 1.2 eV. The degradation of the contacts over multiple cycles up to 400°C was observed, resulting in a significant increase in series resistance of the diodes by 1000× at ambient temperature after they were cycled. According to electron microscopy measurements, this degradation is likely due in part to the migration and oxidation of Ti at the top surface of the Au contact pads. This degradation highlights the need for further research and development to ensure stable Ohmic and Schottky contacts to Ga 2 O 3 at temperatures above 400°C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Programming correlated magnetic states with gate-controlled moiré geometry

The ability to control the underlying lattice geometry of a system may enable transitions between emergent quantum ground states. We report in situ gate switching between honeycomb and triangular lattice geometries of an electron many-body Hamiltonian in rhombohedral (R)–stacked molybdenum ditelluride (MoTe 2 ) moiré bilayers, resulting in switchable magnetic exchange interactions. At zero electric field, we observed a correlated ferromagnetic insulator near one hole per moiré unit cell with a widely tunable Curie temperature up to 14 K. Applying an electric field switched the system into a half-filled triangular lattice with antiferromagnetic interactions; further doping this layer-polarized superlattice tuned the antiferromagnetic exchange interaction back to ferromagnetic. Our work demonstrates R-stacked MoTe 2 moirés to be a laboratory for engineering correlated states with nontrivial topology.

Science & Technology - Other Topics↗
DOE OSTI2025

Modeling a High-Temperature Electrochemically Driven Water-Gas-Shift Process Using a Mixed-Conducting Membrane without External Electrical Power

This paper develops a model to predict and interpret the performance of an elevated-temperature, electrochemical, membrane-assisted, water-gas-shift process. The process uses separated feed streams of H 2 O and CO to produce separated streams of H 2 and CO 2 , without an external electrical power source. The dense ceramic membrane is mixed ionic-electronic-conducting (MIEC) gadolinium-doped ceria (GDC) and the porous composite electrodes are Ni-YSZ. At elevated temperature, GDC conducts both oxygen ions and small polarons. The present process uses chemical potential to drive the process. Electrochemical oxidation of CO proceeds within the composite anode and H 2 O reduction proceeds within the composite cathode. At high temperature (e.g., T > 700 °C), GDC has significant electronic leakage in the form of a reduced-cerium small polaron, which supports the charge-transfer reactions. In a typical electrolyzer or fuel cell, this leakage is significantly problematic. However, the present process depends on the leakage current to complete the electrochemical circuit. Model development and validation is based on measured material properties and reactor performance. Potential applications include using CO-rich blast-furnace off gases in steel processing, producing separated streams of H 2 and CO 2 .

Zhu, Huayang↗
NASA NTRS1980

Development of advanced thermoelectric materials, phase A

Work performed on the chemical system characterized by chrome sulfide, chrome selenide, lanthanum selenide, and lanthanum sulfide is described. Most materials within the chemical systems possess the requisites for attractive thermoelectric materials. The preparation of the alloys is discussed. Graphs show the Seebeck coefficient, electrical resistivity, and thermal conductivity of various materials within the chemical systems. The results of selected doping are included.

Source record↗
NASA NTRS1986

Polarizing Filter for Integrated Optics

Polarizing filter for titanium-doped lithium niobate light waveguide suppresses transverse magnetic (TM) mode of light propagation while allowing transverse electric (TE) mode to continue on its way. Filter - lithium niobate crystal - is expected to find many applications in integrated optical circuits.

Ramer, O. G.↗