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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗
NASA NTRS1989

Channelized coplanar waveguide: Discontinuities, junctions, and propagation characteristics

A new variant of CPW which has been termed channelized CPW, CCPW, is presented. Measured and computed propagation characteristics are presented. Lumped equivalent circuit element values for a CCPW open circuit and right angle bend have been obtained. CCPW power divider junctions and a coax-to-CCPW in-phase, radial power divider are also presented.

Simons, Rainee N.↗
NASA NTRS1988

The mean flow structure around and within a turbulent junction or horseshoe vortex. I - The upstream and surrounding three-dimensional boundary layer

An experimental study of the mean flow structure upstream, around, and in a turbulent junction or horseshoe vortex is presented for the case of an incompressible subsonic flow. Mean velocity field and turbulent kinetic energy field measurements (obtained with hot film anemometry) and local wall shear stress measurements are used to monitor the upstream and surrounding three-dimensional turbulent boundary layer-like flow away from separation. Freestream or edge velocity and floor static pressure results are reported.

Menna, J. D.↗
NASA NTRS1990

The growth and development of a turbulent junction vortex system

The growth and development of a vortex system in an incompressible three-dimensional flow generated by a streamlined cylinder mounted with its axis normal to a flat surface was investigated using data from surface flow visualizations, surface pressure measurements, and mean flow measurements. The results from velocity measurements revealed the presence of a single large dominant vortex and a small vortex in the junction between the cylinder and the flat surface. This second vortex is tentatively identified as being connected with a corner separation occurring just downstream of the body at its thickest cross section. It is shown that, as the principal horseshoe vortex develops downstream, the strength of the vortex decreases, while its length scale increases.

Pierce, F. J.↗
NASA NTRS1991

Nonintrusive Measurement Of Temperature Of LED Junction

Temperature inferred from spectrum of emitted light. Method of determining temperature of junction based on two relevant characteristics of LED. Gap between valence and conduction electron-energy bands in LED material decreases with increasing temperature, causing wavelength of emitted photon to increase with temperature. Other, as temperature increases, non-radiative processes dissipate more of input electrical energy as heat and less as photons in band-gap wavelenth region; optical and quantum efficiencies decrease with increasing temperature. In principal, either characteristic alone used to determine temperature. However, desirable to use both to obtain indication of uncertainty.

Leidecker, Henning↗
NASA NTRS1991

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed.

Wanlaas, M. W.↗
NASA NTRS1991

Standard test case for a low-speed, turbulent junction vortex flow

The mean flow structure upstream, around within, and in the near wake of a turbulent junction or horseshoe vortex is reported for an incompressible subsonic flow. Measurements of the primitive variables of velocity and pressure are reported on all surfaces bounding the region of the vortex flow and on three transverse and one streamwise plane within the flowfield itself for comparisons between the measured and any calculated flow variables. Detailed surface flow visualizations and some direct force measurements of surface shear stress are also available. The data is a highly detailed, coherent, self-consistent set offered to the computational fluid mechanics community as a standard test case for the evaluation of the capability of numerical solvers intended for predicting the flowfield in such a complex, separated, three-dimensional turbulent flow. This data base is available for copying to user supplied tapes or for transmission via BITNET, as well as in two National Technical Information Service (NTIS) reports.

Pierce, F. J.↗
NASA NTRS1990

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Dinetta, L. C.↗
NASA NTRS1991

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Weizer, Victor G.↗
NASA NTRS1992

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1992

Sinterless contacts to shallow junction InP solar cells

In the past, the achievement of good electrical contact to InP has inevitably been accompanied by mechanical degradation of the InP itself. Most contact systems require heat treatment after metal deposition that results in the dissolution of substantial amounts of InP into the metallization. Devices such as the solar cell, where shallow junctions are the rule, can be severely degraded if the damage to the semiconductor substrate is not precisely controlled. Two contact systems are described that provide low contact resistance to InP solar cells that do not require subjecting the current carrying metallization to a post deposition sintering process. It is shown that these two systems, one nickel based and the other silver based, provide contact resistivity values in the low 10(exp -6) ohm sq cm range, as fabricated, without the need for sintering.

Weizer, V. G.↗
NASA NTRS1992

Measurements of the flow around a lifting-wing/body junction

Detailed measurements of all three mean velocity components and five of the six Reynolds stresses have been made around a model of a lifting-wing/body junction. The body was the flat working section floor of a small blower wind tunnel. Measurements of the surface pressure distribution on the NACA 0012 wing showed that the lift coefficient at the body surface was reduced by only 16 percent from the freestream value. It is shown that the near constancy of the bound vorticity requires the formation of aixal vorticity within the body boundary layer. This vorticity was concentrated in the two legs of the necklace vortex formed near the leading edge of the wing. The magnitude of the vorticity was always greater in the leg that developed on the suction surface. By four chord lengths downstream of the trailing edge, the turbulence structure of the suction leg was qualitatively similar to that of a single vortex imbedded in a turbulent boundary layer.

Wood, D. H.↗
NASA NTRS1991

A very low resistance, non-sintered contact system for use on indium phosphide concentrator/shallow junction solar cells

An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3 which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.

Weizer, Victor G.↗
NASA NTRS1992

Diffraction by a symmetric material junction simulated with generalized sheet transistion conditions

When diffraction by a material discontinuity in a thick dielectric/ferrite slab is treated for the dual integral equation approach (a variation of the Weiner-Hopf method), the resulting solution displays unknown constants, characteristic of the incompleteness associated with the generalized transition conditions employed in modeling a thick slab. The constants can be shown to depend on the geometry and properties of the discontinuity. Their explicit determination by enforcing field continuity across the slab junction is treated. The field internal to the slab is determined by first expressing the field as an expansion of discrete and continuous eigenmodes valid in the exterior and interior slab region. The expansion or mode coefficients are then identified by recasting the Weiner-Hopf solution in a suitable form, enabling the solution constants to be numerically computed by matching the field expansions to the left and right of the slab discontinuity at a discrete set of points.

Ricoy, Mark A.↗
NASA NTRS1992

A 380 GHz SIS receiver using Nb/AlO(x)/Nb junctions for a radioastronomical balloon-borne experiment: PRONAOS

The superheterodyne detection technique used for the spectrometer instrument of the PRONAOS project will provide a very high spectral resolution (delta nu/nu = 10(exp -6)). The most critical components are those located at the front-end of the receiver: their contribution dominates the total noise of the receiver. Therefore, it is important to perform accurate studies for specific components, such as mixers and multipliers working in the submillimeter wave range. Difficulties in generating enough local oscillator (LO) power at high frequencies make SIS mixers very desirable for operation above 300 GHz. The low LO power requirements and the low noise temperature of these mixers are the primary reason for building an SIS receiver. This paper reports the successful fabrication of small (less than or equal to 1 sq micron) Nb/Al-O(x)/Nb junctions and arrays with excellent I-V characteristics and very good reliability, resulting in a low noise receiver performance measured in the 368/380 GHz frequency range.

Febvre, P.↗
NASA NTRS1992

The role of engineered materials in superconducting tunnel junction X-ray detectors - Suppression of quasiparticle recombination losses via a phononic band gap

An engineered structure is proposed that can alleviate quasi-particle recombination losses via the existence of a phononic band gap that overlaps the 2-Delta energy of phonons produced during recombination of quasi-particles. Attention is given to a 1D Kronig-Penny model for phonons normally incident to the layers of a multilayered superconducting tunnel junction as an idealized example. A device with a high density of Bragg resonances is identified as desirable; both Nb/Si and NbN/SiN superlattices have been produced, with the latter having generally superior performance.

Rippert, Edward D.↗
NASA NTRS1994

Josephson Junctions Help Measure Resonance And Dispersion

Electrical characteristics of superconducting microstrip transmission lines measured at millimeter and submillimeter wavelengths. Submicron Josephson (super-conductor/insulator/superconductor) junctions used as both voltage-controlled oscillators and detectors to measure frequencies (in range of hundreds of gigahertz) of high-order resonant electromagnetic modes of superconducting microstrip transmission-line resonators. This oscillator/detector approach similar to vacuum-tube grid dip meters and transistor dip meters used to probe resonances at much lower frequencies.

Javadi, Hamid H. S.↗
NASA NTRS1994

Computing Scattering Characteristics Of Waveguide Junctions

Rectangular WaveGuide Junction SCATtering RWGSCAT computer program solves scattering properties of waveguide device. Modeled as assembly of rectangular waveguides of different cross sections. RWGSCAT written in FORTRAN 77.

Hoppe, Daniel J.↗