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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Noise equivalent circuit of a semiconductor laser diode

A small-signal model of a semiconductor laser is extended to include the effects of intrinsic noise by adding current and voltage noise sources. The current noise source represents the shot noise of carrier recombination, while the voltage noise source represents the random process of simulated emission. The usefulness of the noise equivalent circuit is demonstrated by calculating the modulation and noise characteristics of a current-driven diode as a function of bias current and frequency.

Harder, C.↗
NASA NTRS1989

Tunable diode laser measurements of absolute line strengths in the 2nu2 band of N2O near 8 microns

The absolute intensities of five rotational transitions in the 2nu2 band of N2O near 8 microns have been measured with a tunable-diode laser-spectrometer. Measurements were reproducible within an average deviation of about 3 percent, and the experimental and calculated line strengths differed by only 1.5 percent. An analysis of the line strengths has yielded a band strength of S(v) = 6.98 + or - 0.26/sq cm per atm at 296 K. The band and line strengths are in excellent agreement with two recently reported values obtained by using Fourier transform-IR spectroscopy.

Tang, Lai-Wa↗
NASA NTRS1999

Hydrazine Detection with a Tunable Diode Laser Spectrometer

Several instruments have been developed to measure low concentrations of hydrazine but none are completely satisfactory. A brief review is presented of current instruments such as the electrochemical cell, the ion mobility spectrometer, the mass spectrometer, the gas chromatograph, and the electronic nose.

Hydrazine↗
NASA NTRS1982

Holograms for laser diode: Single mode optical fiber coupling

The low coupling efficiency of semiconductor laser emissions into a single mode optical fibers place a severe restriction on their use. Associated with these conventional optical coupling techniques are stringent alignment sensitivities. Using holographic elements, the coupling efficiency may be increased and the alignment sensitivity greatly reduced. Both conventional and computer methods used in the generation of the holographic couplers are described and diagrammed. The reconstruction geometries used are shown to be somewhat restrictive but substantially less rigid than their conventional optical counterparts. Single and double hologram techniques are examined concerning their respective ease of fabrication and relative merits.

Fuhr, P. L.↗
DOE OSTI2024

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m -plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.

Wong, Matthew S.↗
NASA NTRS1978

Accelerated step-temperature aging of Al/x/Ga/1-x/As heterojunction laser diodes

Double-heterojunction A2(0.3)Ga(0.7)As/Al(0.08)Ga(0.92)As lasers (oxide-striped and Al2O3 facet coated) were subjected to step-temperature aging from 60 to 100 C. The change in threshold current and spontaneous output was monitored at 22 C. The average time required for a 20% pulsed threshold current increase ranges from about 500 h, when operating at 100 C, to about 5000 h at a 70 C ambience. At 22 C, the extrapolated time is about 1 million h. The time needed for a 50% spontaneous emission reduction is of the same order of magnitude. The resulting activation energies are approximately 0.95 eV for laser degradation and approximately 1.1 eV for the spontaneous output decrease

Kressel, H.↗
NASA NTRS1980

Liquid-phase epitaxy grown PbSnTe distributed feedback laser diodes with broad continuous single-mode tuning range

Distributed feedback (DFB) pulsed laser operation has been demonstrated in stripe geometry Pb(1-x)Sn(x)Te double-heterostructures grown by liquid-phase epitaxy. The grating structure of 0.79 micron periodicity operates in first order near 12.8 microns and was fabricated prior to the liquid-phase epitaxial growth using holographic exposure techniques. These DFB lasers had moderate thresholds, 3.6 kA/sq cm, and the output power versus current curves exhibited a sharp turn-on free of kinks. Clean, single-mode emission spectra, continuously tunable over a range in excess of 20 per cm, centered about 780 per cm (12.8 microns), and at an average rate of 1.2 per cm-K from 9 to 26 K, were observed. While weaker modes could at times be seen in the spectrum, substantially single-mode operation was obtained over the entire operating range and to over 10 times threshold.

Hsieh, H.-H.↗
NASA NTRS1984

Optical communication with laser diode arrays

The performance of a direct-detection optical communication system in which the laser transmitter sends short optical pulses of selected nonoverlapping center frequencies is analysed. This modulation format, in which a single light pulse is sent in one of M time slots at one of N optical center frequencies, is referred to as color coded optical pulse position modulation (CCPPM). The optimum energy-efficiency of this system, as measured by the channel capacity in nats per photon, exceeds that of ordinary optical pulse position modulation which uses a pulsed laser of fixed optical frequency. Reliable communication at optimal energy efficiency is easily achieved through the use of modest block length Reed-Solomon codes with the code words represented as CCPPM symbols.

Davidson, F.↗
NASA NTRS1993

Laser diode ordnance design

The topics are presented in viewgraph form and include the following: characteristics, system description, laser firing unit, fiber optic cables, and initiators.

Rhea, Arthur D.↗
NASA NTRS1991

A lunar rover powered by an orbiting laser diode array

A conceptual design of a high-power, long-duration lunar rover powered by a laser beam is proposed. The laser transmitter in lunar orbit consists of an SP-100 nuclear reactor prime power source providing 100 kW of electricity to a laser array that emits 50 kW of laser radiation. The laser radiation is beamed to the lunar surface where it is received by a GaAlAs solid-state, laser-to-electric converter. This converter provides 22 kW of electrical power to the rover vehicle for science, locomotion, and crew needs. The mass of the laser transmitter is approximately 5000 kg, whereas the mass of the rover power supply is 520 kg. The rover power unit is significantly less massive than alternative rover power units.

De Young, R. J.↗
NASA NTRS1998

Development of Advanced Laser Diode Sources

The design and operation of InGaAs-GaAs-AlGaAs asymmetric cladding ridge waveguide distributed Bragg reflector lasers is presented. Targeted for the remote sensing of water vapor with absorption lines in the lambda approximately 930 nm region, these devices operate CW with threshold currents as low as 11 MA and slope efficiencies as high as 0.37 W/A. Tbey also operate with over 30-dB side-mode suppression, and the typical CW characteristic temperature, T(sub o), is 95 K.

Coleman, J. J.↗
NASA NTRS1991

Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication Systems

The operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.

Connolly, J. C.↗
NASA NTRS1992

Time-resolved far-field analysis of a high power single emitter laser diode

A system was developed which is capable of measuring the time-resolved far-field radiation patterns from a high-power semiconductor laser under intensity modulated conditions. Angular steering of the fundamental spatial mode was observed, with pointing variations as large as 0.5 deg, or 7.5 percent of the beamwidth, during the time of the optical pulse. The variations in pointing angle were directly related to gradients in the transverse index profile of the laser, which may oscillate based on lateral spatial hole burning of the gain and carrier density.

Cornwell, Donald M., Jr.↗