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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Neutron irradiation induced defects and clustering in NF616 and T91

NF616 is a third-generation ferritic martensitic steel, developed to have better creep resistance than the prior generation T91. Unlike relatively numerous studies of T91, there is a lack of understanding of the irradiation effect on the microstructural evolution and mechanical response of NF616. This work evaluated the microstructures and radiation hardening of NF616 irradiated up to 8.2 displacement per atom (dpa) at 292 °C – 431 °C, compared with T91 from two heats. Dislocation loops were observed in all investigated samples. NF616 exhibited comparable loop size but slightly lower loop density than those in the general T91 heat at 430 °C. Cavities were only observed in NF616 at 431 °C but absent at lower irradiation temperatures (292 °C and 359 °C). Ni-rich clusters were also observed in NF616 at 431 °C, while only weak Ni-clustering were observed at lower irradiation temperatures. Compared to the general T91 heat, NF616 demonstrated better swelling resistance (e.g., one third of swelling in the general T91 heat at 430 °C), a slightly higher number density of Ni-rich clusters, and slightly lower radiation hardening. The low-carbon T91 showed the greatest hardening with the largest swelling and loop sizes, despite its lowest irradiation temperature and intermediate dose. The calculated hardening from loops, cavities and Ni-rich clusters using the classic dispersed barrier-hardening model had reasonable agreement with the experiment-derived results, with the primary hardening contribution attributed to dislocation loops.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Colloidal CdSe nanocrystals are inherently defective

Abstract Colloidal CdSe nanocrystals (NCs) have shown promise in applications ranging from LED displays to medical imaging. Their unique photophysics depend sensitively on the presence or absence of surface defects. Using simulations, we show that CdSe NCs are inherently defective; even for stoichiometric NCs with perfect ligand passivation and no vacancies or defects, we still observe that the low energy spectrum is dominated by dark, surface-associated excitations, which are more numerous in larger NCs. Surface structure analysis shows that the majority of these states involve holes that are localized on two-coordinate Se atoms. As chalcogenide atoms are not passivated by any Lewis base ligand, varying the ligand should not dramatically change the number of dark states, which we confirm by simulating three passivation schemes. Our results have significant implications for understanding CdSe NC photophysics, and suggest that photochemistry and short-range photoinduced charge transfer should be much more facile than previously anticipated.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

NiGa 2 O 4 interfacial layers in NiO/Ga 2 O 3 heterojunction diodes at high temperature

NiO/Ga 2 O 3 heterojunction diodes have attracted attention for high-power applications, but their high temperature performance and reliability remain underexplored. Here, we report the time evolution of the electrical properties in the widely studied p-NiO/n-Ga 2 O 3 heterojunction diodes and formation of NiGa 2 O 4 interfacial layers at high temperatures. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO–Ga 2 O 3 interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO–Ga 2 O 3 interface forms a ternary compound at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa 2 O 4 layer between NiO and Ga 2 O 3 . First-principles defect calculations find that NiGa 2 O 4 shows low p-type intrinsic doping and hence can serve to limit electric field crowding at the interface. Vertical NiO/ Ga 2 O 3 diodes with intentionally grown 5 nm thin spinel-type NiGa 2 O 4 interfacial layers show an excellent device ON/OFF ratio of >10 10 (± 3 V), V ON of ~1.9 V, and increased breakdown voltage of ~1.2 kV for an initial unoptimized 300 lm diameter device. These p–n heterojunction diodes are promising for high-voltage, high temperature applications.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2023

Superconductivity in a strange metal

In a gas of charged particles with the density n, mass m, and charge e, the electrical conductivity σ is given by the Drude formula: σ = ne 2 /mΓ, where Γ is the scattering rate. Standard metals are well described by Landau's Fermi Liquid (FL) theory, in which the electric current is carried by quasi-particles, low-energy excitations of the FL that resemble electrons with some effective mass m*. The scattering rate Γ= 1/τ= v F /l, where t is the (momentum) relaxation) time, l is the mean-free path, and v F is the Fermi velocity, can be expressed ("Matthiessen's Rule") as a sum of contributions from various scattering channels: Γ = Γ 0 + Γ el-el + Γ el-ph + …, where Γ 0 describes scattering on lattice imperfections, Γ el-el the electron-electron scattering, Γ el-ph the electron-phonon scattering, etc. Of these, Γ 0 = v F /l 0 , where l 0 is the average distance between the defects, is temperature-independent. Γ el-el should scale as T 2 because of Fermi statistics; for two electrons to scatter on one another, both must come from the "Debye shell" of the width k B T/E F , where k B is the Boltzmann constant and E F is the Fermi energy. Γ el-ph typically grows as T 5 , so we expect this to overwhelm the other channels at a high enough T. However, since l cannot be shorter than the distance between the atoms, the total Γ saturates at Mott-Ioffe-Regel (MIR) limit, roughly v F /a 0 , where v F is the Fermi velocity and a 0 is the lattice constant. The resistivity should also saturate at low T, at ρ 0 = m*v F /ne 2 l 0 T. FL theory also describes other electronic properties; e.g., it predicts that in the magnetic field B, the resistivity of the metal should increase with B 2 , because σ(B) = σ(B=0)/(1 + (ω c /Γ) 2 ), where ω c = eB/m*.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Local chemical ordering of a neutron-irradiated CrFeMnNi compositionally complex alloy

While ion-irradiation studies are a critical first step in studying compositionally complex alloys (CCAs) for nuclear applications, they do not capture all the microstructural changes occurring under the low irradiation dose rates and different particles’ scattering patterns experienced in a nuclear reactor setting. To explore these phenomena in reactor-relevant conditions for the first time in CCA, the single-phase solid-solution Cr 10 Fe 30 Mn 30 Ni 30 was neutron irradiated up to 6.61 displacements per atom at 395 and 579 °C. Irradiation-enhanced local chemical ordering (LCO) well beyond the range of short range ordering was observed, and is predicted to be the precursor to the precipitation of a coherent Ni-Mn L1 0 phase and a Cr-rich α’ phase, though TEM analysis did not indicate the presence of either in any irradiation condition. The line density of faulted dislocation loops decreased from 6.47 to 1.69 ∙ 10 15 m -2 from 3.43 to 6.61 dpa at 579 °C despite no appreciable faulted loop content in the unirradiated material. LCO is expected to increase the complexity of the energy landscape within this alloy, restricting interstitial point defect mobility and creating local regions of greater stacking fault energy. These contribute to the negative correlation between irradiation dose and faulted dislocation loop density in this study, as well as the lack of void swelling observed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Revisiting Artifacts of Kohn–Sham Density Functionals for Biosimulation

We revisit the problem of unphysical charge density delocalization/fractionalization induced by the self-interaction error of common approximate Kohn–Sham (KS) density functional theory functionals on simulation of small to medium-sized proteins in a vacuum. Aside from producing unphysical electron densities and total energies, the vanishing of the HOMO–LUMO gap associated with the unphysical charge delocalization leads to an unphysical low-energy spectrum and catastrophic failure of most popular solvers for the KS self-consistent field (SCF) problem. We apply a robust quasi-Newton SCF solver to obtain solutions for some of these difficult cases. The anatomy of the charge delocalization is revealed by the natural deformation orbitals obtained from the density matrix difference between the Hartree–Fock and KS solutions; the charge delocalization not only can occur between charged fragments (such as in zwitterionic polypeptides) but also involves neutral fragments. The vanishing-gap phenomenon and troublesome SCF convergence are both attributed to the unphysical KS Fock operator eigenspectra of molecular fragments (e.g., amino acids or their side chains). Analysis of amino acid pairs suggests that the unphysical charge delocalization can be partially ameliorated by the use of some range-separated hybrid functionals but not by semilocal or standard hybrid functionals. Last, we demonstrate that solutions without the unphysical charge delocalization can be located even for semilocal KS functionals highly prone to such defects, but such solutions have non-Aufbau character and are unstable with respect to mixing of the non-overlapping “frontier” orbitals. Caution should be exercised when unexpectedly small (or vanishing) HOMO–LUMO gaps and atypical SCF convergence patterns (e.g., oscillatory) are observed in KS DFT simulations in any context (bio or otherwise).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Doping Effects on Multivalence States, Electronic Structure, and Optical Band Gap in LaCrO 3 under Varied Atmospheres: An Integrated Experimental and Density Functional Theory Study

Doping effects on the valence state, electronic structure, and optical band and the effects on electrical conductivity were studied on the doped lanthanum chromite (LaCrO 3 ) system. The specific compositions studied were La 1–x Ca x CrO 3 (LCCx), La 1–x Sr x CrO 3 (LSCx), and La 0.8 Sr 0.2 Cr 1–x Mn x O 3 (LSCMx) (0.1 ≤ x ≤ 0.4). The powders were synthesized using a modified Pechini sol–gel method, and the ceramic samples were densified using a reactive sintering method resulting in densities >96% theoretical. X-ray photoelectron spectroscopy (XPS) was completed to characterize the defect states and cationic valence compensation as a result of divalent (Ca 2+ or Sr 2+ ) and trivalent (Mn 3+ ) substitutions. XPS was completed for samples tested in oxidizing and reducing atmospheres (up to 1500 °C), which provided insights into the oxidation state transitions induced by the Ca 2+ and Sr 2+ dopants. The work notably demonstrated, for the first time, the oxidation/reduction transitions of Cr 4+ to Cr 3+ in Sr 2+ /Mn 3+ co-doped samples under reducing atmospheres. Reflectance UV–vis spectrophotometry optical band gap measurements were also completed for the same materials; a decrease in the optical band gap (2.81–3.12 eV) was shown with increased substitution, suggesting electronic structure modifications in the LaCrO 3 perovskite. Density functional theory calculations validated experimental trends, predicting a diminishing band gap with a rising dopant concentration. The transition in Cr oxidation states was attributed to the presence of divalent/trivalent cations. These findings contribute some insights into methods to tune the LaCrO 3 electrical properties for various low- and high-temperature applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Ab initio ultrafast spin dynamics in solids

Spin relaxation and decoherence is at the heart of spintronics and spin-based quantum information science. Currently, theoretical approaches that can accurately predict spin relaxation of general solids including necessary scattering pathways and are capable of nanosecond to millisecond simulation time are urgently needed. We present a first-principles real-time density-matrix approach based on Lindblad dynamics to simulate ultrafast spin dynamics for general solid-state systems. Through the complete first-principles descriptions of pump, probe, and scattering processes including electron-phonon, electron-impurity, and electron-electron scatterings with self-consistent electronic spin-orbit couplings, our method can directly simulate the ultrafast pump-probe measurements for coupled spin and electron dynamics over nanoseconds at any temperatures and doping levels. We first apply this method to a prototypical system GaAs and obtain excellent agreement with experiments. We found that the relative contributions of different scattering mechanisms and phonon modes differ considerably between spin and carrier relaxation processes. In sharp contrast to previous work based on model Hamiltonians, we point out that the electron-electron scattering is negligible at room temperature but becomes dominant at low temperatures for spin relaxation in n-type GaAs. We further examine ultrafast dynamics in novel spin-valleytronic materials: monolayer and bilayer WSe 2 with realistic defects. We find that spin relaxation is highly sensitive to local symmetry and chemical bonds around defects. For the bilayer WSe 2 , we identify the scattering pathways in ultrafast dynamics and determine relevant dynamical properties, essential to its utilization of unique spin-valley-layer locking effects. In conclusion, our work provides a predictive computational platform for spin dynamics in solids, which has potential for designing new materials ideal for spintronics and quantum information technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Solid-State Calcium-Ion Diffusion in Ca 1.5 Ba 0.5 Si 5 O 3 N 6

Rechargeable batteries based on multivalent working ions are promising candidates for next-generation high-energy-density batteries. Development of these technologies, however, is largely limited by the low diffusion rate of multivalent ions in solid-state materials, thereby necessitating a better understanding of the design principles that control multivalent-ion mobility. We report Ca 1.5 Ba 0.5 Si 5 O 3 N 6 as a potential calcium solid-state conductor and investigate its Ca migration mechanism by means of ab initio computations and neutron diffraction. This compound contains partially occupied Ca sites in close proximity to each other, providing a unique mechanism for Ca migration. Nuclear density maps obtained with the maximum entropy method from neutron powder diffraction data provide strong evidence for low-energy percolating one-dimensional pathways for Ca-ion migration. Ab initio molecular dynamics simulations further support a low Ca-ion migration barrier of ~400 meV when Ca vacancies are present and reveal a unique "vacancy-adjacent"concerted ion migration mechanism. This work provides a new understanding of solid-state Ca-ion diffusion and insights into the future design of novel cation configurations that utilize the interactions between mobile ions to enable fast multivalent-ion conduction in solid-state materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Fast Organic Vapor Phase Deposition of Thin Films in Light-Emitting Diodes

Fast deposition of thin films is essential for achieving low-cost, high throughput phosphorescent organic light emitting diode (PHOLED) production. In this work, we demonstrate rapid and uniform growth of semiconductor thin films by organic vapor phase deposition (OVPD). A green PHOLED comprising an emission layer (EML) grown at 50 Å/s with bis[2-(2-pyridinyl-N)phenyl-C](acetylacetonato)iridium(III) (Ir(ppy)2(acac)) doped into 4,4 bis(N-carbazolyl)-1,1zolylld (CBP) exhibits a maximum external quantum efficiency of 20 ± 1%. The morphology, charge transport properties, and radiative efficiency under optical and electrical excitation of the PHOLED EML are investigated as functions of the deposition rate via both experimental and theoretical approaches. The EML shows no evidence for gas phase nucleation of the organic molecules at deposition rates as high as 50 Å/s. However, the roll-off in quantum efficiency at high current progressively increases with deposition rate due to enhanced triplet-polaron annihilation. The roll-off results from accumulation of stress within the PHOLED EML that generates a high density of defect states. Here, the defects, in turn, act as recombination sites for triplets and hole polarons, leading to enhanced triplet-polaron annihilation at high current. We introduce a void nucleation model to describe the film morphology evolution that is observed using electron microscopy.

42 ENGINEERING↗
DOE OSTI2021

Selective Methane Oxidation to Methanol on ZnO/Cu 2 O/Cu(111) Catalysts: Multiple Site-Dependent Behaviors

Due to the abundance of natural gas in our planet, a major goal is to achieve a direct methane to methanol conversion at medium to low temperatures using mixtures of methane and oxygen. Here, we report an efficient catalyst, ZnO/Cu 2 O/Cu(111), for this process investigated using a combination of reactor testing, scanning tunneling microscopy, ambient-pressure x-ray photoemission spectroscopy, density functional calculations, and kinetic Monte Carlo simulations. The catalyst is capable of methane activation at room temperature and transforms mixtures of methane and oxygen to methanol at 450 K with a selectivity of ~30%. This performance is not seen for other heterogenous catalysts which usually require the addition of water to enable a significant conversion of methane to methanol. The unique coarse structure of the ZnO islands supported on a Cu 2 O/Cu(111) substrate provides a collection of multiple centers that display different catalytic activity during the reaction. ZnO-Cu 2 O step sites are active centers for methanol synthesis when exposed to CH 4 and O 2 due to an effective O-O bond dissociation, which enables a methane-to-methanol conversion with a reasonable selectivity. Upon addition of water, the defected O-rich ZnO sites, introduced by Zn vacancies, show superior behavior towards methane conversion and enhance the overall methanol selectivity to over 80%. Thus, in this case, the surface sites involved in a direct CH 4 → to CH 3 OH conversion are different from those engaged in methanol formation without water. Furthermore, the identification of the site-dependent behavior of ZnO/Cu 2 O/Cu(111) opens a design strategy for guiding efficient methane reforming with high methanol selectivity.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Three-dimensional hard X-ray ptychographic reflectometry imaging on extended mesoscopic surface structures

Many nanodevices and quantum devices, with their sizes often spanning from millimeters down to sub-nanometer, have intricate low-dimensional, non-uniform, or hierarchical structures on surfaces and interfaces. Since their functionalities are dependent on these structures, high-resolution surface-sensitive characterization becomes imperative to gain a comprehensive understanding of the function–structure relationship. We thus developed hard x-ray ptychographic reflectometry imaging, a new technique that merges the high-resolution two-dimensional imaging capabilities of hard x-ray ptychography for extended objects, with the high-resolution depth profiling capabilities of x-ray reflectivity for layered structures. The synergy of these two methods fully leverages both amplitude and phase information from ptychography reconstruction to not only reveal surface topography and localized structures, such as shapes and electron densities, but also yields statistical details, such as interfacial roughness that is not readily accessible through coherent imaging solely. The hard x-ray ptychographic reflectometry imaging is well-suited for three-dimensional imaging of mesoscopic samples, particularly those comprising planar or layered nanostructures on opaque supports, and could also offer a high-resolution surface metrology and defect analysis on semiconductor devices, such as integrated nanocircuits and lithographic photomasks for microchip fabrications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Performance characterization of 5×5×12 mm 3 virtual Frisch-grid TlBr detectors

Thallium bromide (TlBr) is a promising material for semiconductor gamma-ray detectors due to its high atomic number (Tl = 81, Br = 35), high density (7.56 g/cm 3 ), and relatively low melting point (460 °C). These properties give TlBr several competitive features, including high detection efficiency, good energy resolution, and lower fabrication costs, making it suitable for applications requiring compact, highly sensitive gamma-ray detection systems. Recent developments of TlBr detectors have progressed toward thicker crystals, up to 10–20 mm, configured as pixelated or virtual Frisch-grid (VFG) devices with volumes >1 cm 3 . Despite these advances, challenges remain in practical implementation, including material and fabrication issues that affect energy resolution, device stability, performance, and longevity. These challenges are similar to those faced by HgI 2 and lead-halide perovskite detectors. Here, this study presents results from characterizing over 100 position-sensitive 5×5×12 mm 3 virtual Frisch-grid detectors fabricated by Radiation Monitoring Devices Inc. For a prototype Radioisotope Identification Device (RIID). The work identified factors limiting the performance and longevity of TlBr detectors, including stochastic response variations that limit the energy resolution to 2–3 % (at 662 keV) for most devices, performance degradation associated with defect decoration, and contact delamination. Addressing these issues advances the use of TlBr and similar materials for reliable, high-resolution gamma-ray spectroscopy.

47 OTHER INSTRUMENTATION↗
DOE OSTI2023

Atomic-scale origin of the low grain-boundary resistance in perovskite solid electrolyte Li 0.375 Sr 0.4375 Ta 0.75 Zr 0.25 O 3

Oxide solid electrolytes (OSEs) have the potential to achieve improved safety and energy density for lithium-ion batteries, but their high grain-boundary (GB) resistance generally is a bottleneck. In the well-studied perovskite oxide solid electrolyte, Li 3x La 2/3-x TiO 3 (LLTO), the ionic conductivity of grain boundaries is about three orders of magnitude lower than that of the bulk. In contrast, the related Li 0.375 Sr 0.4375 Ta 0.75 Zr 0.25 O 3 (LSTZ0.75) perovskite exhibits low grain boundary resistance for reasons yet unknown. Here, we use aberration-corrected scanning transmission electron microscopy and spectroscopy, along with an active learning moment tensor potential, to reveal the atomic scale structure and composition of LSTZ0.75 grain boundaries. Vibrational electron energy loss spectroscopy is applied for the first time to reveal atomically resolved vibrations at grain boundaries of LSTZ0.75 and to characterize the otherwise unmeasurable Li distribution therein. We find that Li depletion, which is a major reason for the low grain boundary ionic conductivity of LLTO, is absent for the grain boundaries of LSTZ0.75. Instead, the low grain boundary resistivity of LSTZ0.75 is attributed to the formation of a nanoscale defective cubic perovskite interfacial structure that contained abundant vacancies. Our study provides new insights into the atomic scale mechanisms of low grain boundary resistivity.

25 ENERGY STORAGE↗
DOE OSTI2021

Deep learning of accurate force field of ferroelectric HfO 2

The discovery of ferroelectricity in HfO 2 -based thin films opens up new opportunities for using this silicon-compatible ferroelectric to realize low-power logic circuits and high-density nonvolatile memories. The functional performances of ferroelectrics are intimately related to their dynamic responses to external stimuli such as electric fields at finite temperatures. Molecular dynamics is an ideal technique for investigating dynamical processes on large length and time scales, though its applications to new materials are often hindered by the limited availability and accuracy of classical force fields. Here we present a deep neural network–based interatomic force field of HfO 2 learned from ab initio data using a concurrent learning procedure. The model potential is able to predict structural properties such as elastic constants, equation of states, phonon dispersion relationships, and phase transition barriers of various hafnia polymorphs with accuracy comparable with density functional theory calculations. Here, the validity of this model potential is further confirmed by the reproduction of experimental sequences of temperature-driven ferroelectric-paraelectric phase transitions of HfO 2 with isobaric-isothermal ensemble molecular dynamics simulations. We suggest a general approach to extend the model potential of HfO 2 to related material systems including dopants and defects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Descriptor-Based Analysis of Atomic Layer Deposition Mechanisms on Spinel LiMn 2 O 4 Lithium-Ion Battery Cathodes

Protective coatings have been shown to effectively suppress Mn ion dissolution from the spinel LiMn 2 O 4 lithium-ion battery cathode by stabilizing the surface against undesired side reactions with the electrolyte. In spite of extensive study, however, there remains a lack of atomic-scale understanding of how such coatings are deposited, and no molecular-level descriptor to predict trends in deposition mechanisms has been identified. We have recently shown that Al 2 O 3 coatings grown by atomic layer deposition (ALD) with alternating trimethylaluminum (TMA) and water exposures exhibit submonolayer growth because of precursor decomposition on the lithium manganate spinel (LMO) surface during early ALD pulses. In the present work, we elucidate the underlying mechanisms of this Al 2 O 3 ALD process using density functional theory (DFT) calculations and X-ray photoelectron spectroscopy (XPS) experiments, and we introduce a generalized descriptor-based framework to understand the resulting trends across a spectrum of surface structures and functionalities. We demonstrate that all decomposition products, including CH 3 -aluminum adducts and dissociated CH 3 groups, are Lewis bases and are coordinated to oxygen atoms on the LMO surface, leading to charge transfer to Lewis acidic Mn 3d states. Inert-transfer XPS supports these theoretical predictions, showing an increase in near-surface Mn 3+ content following TMA exposure and shifts in C is spectra consistent with C-O bond formation. We extend the DFT studies to various low- and high-index LMO surface facets, as a proxy for tuning the Lewis acid-base interactions between surface-bound CH 3 * and near-surface Mn ions. The thermochemistry for TMA reactions on these chemically distinct LMO surfaces demonstrates that ALD is structure-sensitive and that there is higher reactivity for TMA decomposition and Al 2 O 3 nucleation near LMO steps and defects. Motivated by the Lewis basic character of the decomposition products, we introduce the oxygen vacancy formation energy as a descriptor for decomposition energetics, and we demonstrate that all energetics are correlated to this quantity through the number of electrons that are transferred along the reaction coordinate. Finally, based on these findings, we hypothesize that improved electrochemical cycling with only 1-2 ALD cycles may be due to selective passivation of defect sites on the LMO surface that are more susceptible to Mn dissolution, and we suggest that similar descriptor-based analyses could be useful for the study of other ALD coatings on oxide substrates.

25 ENERGY STORAGE↗
DOE OSTI2021

Achieving record hot spot energies with large HDC implosions on NIF in HYBRID-E

HYBRID-E is an inertial confinement fusion implosion design that increases energy coupled to the hot spot by increasing the capsule scale in cylindrical hohlraums while operating within the current experimental limits of the National Ignition Facility. HYBRID-E reduces the hohlraum scale at a fixed capsule size compared to previous HYBRID designs, thereby increasing the hohlraum efficiency and energy coupled to the capsule, and uses the cross-beam energy transfer (CBET) to control the implosion symmetry by operating the inner (23° and 30°) and outer (44° and 50°) laser beams at different wavelengths (Δλ> 0). Small case to capsule ratio designs can suffer from insufficient drive at the waist of the hohlraum. We show that only a small amount of wavelength separation between the inner and outer beams (Δλ1-2 Å) is required to control the symmetry in low-gas-filled hohlraums (0.3 mg/cm3 He) with enough drive at the waist of the hohlraum to symmetrically drive capsules 1180 μm in outer radius. This campaign is the first to use the CBET to control the symmetry in 0.3 mg/cm3 He-filled hohlraums, the lowest gas fill density yet fielded with Δλ> 0. We find a stronger sensitivity of hot spot P2 in μm per Angstrom (40–50 μm/Å wavelength separation) than observed in high-gas-filled hohlraums and previous longer pulse designs that used a hohlraum gas fill density of 0.6 mg/cm3. There is currently no indication of transfer roll-off with increasing Δλ, indicating that even longer pulses or larger capsules could be driven using the CBET in cylindrical hohlraums. We show that the radiation flux symmetry is well controlled during the foot of the pulse, and that the entire implosion can be tuned symmetrically in the presence of the CBET in this system, with low levels of laser backscatter out of the hohlraum and low levels of hot electron production from intense laser–plasma interactions. Radiation hydrodynamic simulations can accurately represent the early shock symmetry and be used as a design tool, but cannot predict the late-time radiation flux symmetry during the peak of the pulse, and semi-empirical models are used to design the experiments. Deuterium–tritium (DT)-layered tests of 1100 μm inner radius implosions showed performance close to expectations from simulations at velocities up to ~360 km/s, and record yields at this velocity, when increasing the DT fuel layer thickness to mitigate hydrodynamic mixing of the ablator into the hot spot as a result of defects in the ablator. However, when the implosion velocity was increased, mixing due to these defects impacted performance. The ratio of measured to simulated yield for these experiments was directly correlated with the level of observed mixing. These simulations suggest that reducing the mixing, e.g., by improving the capsule defects, could result in higher performance. In addition, future experiments are planned to reduce the coast time at this scale, delay between the peak compression and the end of the laser, to increase the hot spot convergence and pressure. To reduce the coast time by several hundred ps compared to the 1100 μm inner radius implosions, HYBRID-E has also fielded 1050 μm inner radius capsules, which resulted in higher hot spot pressure and a fusion energy yield of ~170 kJ.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Radiation Effects in III-V Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

The recent development of hydride vapor phase epitaxy (HVPE) is potentially promising as a route to lower the cost of high-efficiency III-V solar cells for space applications. HVPE produces the same materials and device structures as the industry-standard organometallic vapor phase epitaxy (OMVPE) process, and although HVPE has shown promising device efficiencies, it lags the OMVPE growth technique in technical maturity. For example, there are no reports of the performance of HVPE-grown devices in radiation environments. There is an expectation that high-quality (that is, single crystal and low-defect) III-V materials will behave similarly regardless of the growth method. However, it is important to verify assumptions as facts. In this project, we produced materials and devices using both HVPE and OMVPE at NREL and irradiated them using 1 MeV electrons to ascertain the effect of radiation on the materials. We also performed initial work on producing more radiation-hard structures, including devices with the pn junction at the front of the device, and devices with a graded doping profile, both of which help with radiation tolerance. Measurements of the devices post radiation exposure showed that the open-circuit voltage (V OC ) of the HVPE-grown solar cells degraded least on a percent basis, although they also started from a lower baseline than the OMVPE-grown devices. All solar cells reached approximately the same V OC after irradiation, indicating that the dose used was sufficient to degrade all device equally. The short-circuit current in the HVPE devices did degrade more than the other solar cells, and this was attributed to a higher-than-expected doping density in the base layer of that cell. The results of these experiments, while by no means comprehensive, do not show any material difference in the radiation effects in OMVPE- and HVPE-grown materials and devices.

14 SOLAR ENERGY↗