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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 415 records · Page 23
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗
DOE OSTI2020

Demonstrating the GaInP/GaAs Three-Terminal Heterojunction Bipolar Transistor Solar Cell

The three-terminal heterojunction bipolar transistor solar cell (HBTSC) concept enables the realization of a monolithic double-junction device with individual current extraction. We present an HBTSC realized by a heterojunction of GaInP and GaAs. The one-sun open-circuit voltage (V OC ) of the top and bottom junctions are 1.33 V and 0.99 V, respectively, while fill factors (FF) are above 80%. At one-sun illumination, reducing one junction's bias from V OC to maximum power point degrades the performance of the other junction only slightly (<; 0.5% efficiency loss). These results demonstrate the potential of the HBTSC concept to produce high-efficiency independently connected double-junction solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Rear Heterojunction GaAs Solar Cells With Strain-Balanced GaInAs/GaAsP Quantum Wells

We have fabricated GaAs rear-heterojunction solar cells with strain-balanced GaInAs/GaAsP multiple quantum wells to increase the range of absorption. The overall device architecture includes a thick n-type GaAs emitter layer, followed by undoped multiple quantum wells (QWs) and then a heterojunction with a higher bandgap GaInP p-type base. The QWs shift the band edge to from ~870 nm to 930 nm and results in >2 mA/cm 2 collection below the GaAs bandgap. Due to the heterojunction, the cell demonstrated a high open-circuit voltage of Voc=1.03V and an efficiency of 26.4% at 1000 W/m 2.

14 SOLAR ENERGY↗
DOE OSTI2020

Defect Study of Group V Doped CdTe By Thermoelectric Effect Spectroscopy

Shallow acceptors in single crystal CdTe induced by Group V (P, As, and Sb) doping are identified by thermoelectric effect spectroscopy (TEES). Understanding defects in Group V doped CdTe is critical to improving and controlling the acceptor density and lifetime in the absorber material which is an important factor determining the open circuit voltage and efficiency in CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

Doping of CdTe Using CuCl2 Solution for Highly Efficient Photovoltaic Devices

Here, we report doping of cadmium telluride (CdTe) thin film solar cells using copper (II) chloride (CuCl 2 ) solution in deionized water. The CdTe thin films were immersed in 0.1 mmol CuCl 2 solution in water and annealed in the temperature range of 180-240 degrees C for various time durations. The devices were completed using thermally evaporated gold (Au) and measured under simulated AM1.5G spectrum. The average device efficiency of CuCl 2 treated CdTe devices increased to 13.7 % (best cell reaching 14.0%) with significant improvement on open-circuit voltage (VOC ) as compared with 12.4% (best cell 12.7%) for thermally evaporated Cu doped CdTe devices. For CuCl 2 treated CdTe devices, we found higher photoluminescence (PL) intensity and longer carrier life time at room temperature indicating solution based doping offers better control of Cu doping density as compared with evaporated Cu.

14 SOLAR ENERGY↗
DOE OSTI2020

Triple-Halide Bandgap Tuning in Top Cells for Perovskite/Si Tandems

We found Br/I mixed perovskite with high fraction of Cs can steadily incorporate Cl-based perovskite to tune the bandgap. The resulting films exhibit significant improvement in the mobility and lifetime of photocarriers. In 1.67eV wide-bandgap perovskite top cells optimized for perovskite/Si tandems, we achieved a great reducing of voltage-of-open-circuit (VOC) deficit from 0.57eV to 0.45eV, which is among the best of perovskite top cells in Si tandems reported so far. The stabilized PCE is improved from 17-18% to 20%, featured with high VOC (1.22V) and high FF (83%). This advance in wide-bandgap top cells holds promise for improving perovskite/Si tandems.

14 SOLAR ENERGY↗
DOE OSTI2020

High Performance GaAs Solar Cells Grown at High Growth Rates by Atmospheric-Pressure Dynamic Hydride Vapor Phase Epitaxy

We report GaAs solar cells grown at rates exceeding 300 um/h by atmospheric-pressure dynamic hydride vapor phase epitaxy (D-HVPE). The surface morphology of the GaAs layers grown at those rates is smooth, with root mean square surface roughness of < 1.4 nm. We grew GaAs solar cells at rates from 35 - 309 um/h with negligible degradation in open circuit voltages (VOC), which ranged from 1.04 - 1.07 V. We showed the slight decrease in VOC is due to lack of doping optimization at higher growth rates. Deep level transient spectroscopy measurements showed low point defect densities that increases slightly with growth rate from 35 - 309 um/h. The low point defect concentrations and the high VOCs indicate that high material quality can be maintained at these extremely high growth rates, enabling the deposition of high efficiency cells in mere seconds instead of hours.

14 SOLAR ENERGY↗
DOE OSTI2021

High-Photovoltage All-Perovskite Tandem Solar Cells for Photovoltaic-Electrolysis Water-Splitting Applications

Monolithic perovskite/perovskite tandem solar cells have attracted substantial attention owing to their promise for high power conversion efficiency (PCE) and low fabrication cost. Conventional all-perovskite tandem solar cells employ a mixed tin (Sn)-lead (Pb) low-bandgap subcell, which suffers from instability issues in the ambient air. Here, we fabricate two-terminal perovskite/perovskite tandem solar cells consisting of two solution-processed perovskite subcells based on the more airstable pure Pb-based perovskites. The champion perovskite tandem cell exhibits a PCE of 19.2% with a high open-circuit voltage of 2.15 V. We further demonstrate photovoltaicelectrolysis (PV-EC) water-splitting applications using these high-photovoltage all-perovskite tandem solar cells.

metal halide perovskite↗
DOE OSTI2021

Effect of Doping Density on the Performance of Metamorphic GaInAs Solar Cells Grown by Dynamic Hydride Vapor Phase Epitaxy

We study the effect of doping density on the performance of inverted metamorphic ~1 eV GaInAs solar cells grown by dynamic hydride vapor phase epitaxy. We find that the doping efficiency of Se in this material is extremely high, with 5x10 17 cm -3 being the lowest controlled value we could achieve with our present Se source. We compared rear heterojunction devices grown with intentional n-doping of 5x10 17 cm -3 and unintentional n-doping of 5x10 15 cm -3 . The intentionally doped sample exhibited an open circuit voltage ~80 mV higher than the unintentionally doped sample due to reduced dark current, and a bandgap voltage offset, or W OC , of 0.407 V. We believe that future doping optimization will improve carrier collection and W OC in these devices.

GaAs↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗
DOE OSTI2021

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗
DOE OSTI2021

Low-Cost Handle Study for Photovoltaics on Transfer Printed Virtual Substrates

This work expands upon previous research related to transfer printed virtual substrates: a technique for generating low-cost engineered substrates that is not based on wafer reuse. Here, silicon and sapphire are evaluated as candidate low-cost handle materials, validated by metal organic chemical vapor deposition regrowth of GaAs single-junction solar cells. Resulting devices are studied via materials and electrical characterization techniques, including concentration measurements that indicate GaAs//sapphire TPVS open-circuit voltage at >10 suns comparable with identical devices grown on a prime GaAs substrate.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2022

Stability of Silicon Heterojunction Solar Cells Having Hydrogen Plasma Treated Intrinsic Layer

The open-circuit voltage of Silicon Heterojunction (HJ) cells can be improved by using extrinsic hydrogen plasma treatment (HPT) to reduce the trap states (NT) which we have verified using Deep Level Transient Spectroscopy (DLTS). However, hydrogen has been associated with long-term degradation. We have investigated the stability of HJ cells with and without HPT using accelerated degradation (1-sun illumination, 90 degrees C temperature, argon ambient for 1000 hours). The stability has been studied using DLTS, current-voltage, and Suns-Voc. Our results show HPT cells are stable and maintain their higher Voc and lower NT after accelerated degradation.

degradation↗
DOE OSTI2022

Hybrid Functional Calculations for Antimony Doping in CdTe

CdTe-based solar cells are leading thin-film photovoltaic technology, with efficiencies over 22%, but still much lower than the theoretical maximum of 29%. Further improvements will rely on increasing the open-circuit voltage Voc, which, in turn, depends on carrier density and lifetime. Using hybrid density functional calculations, we investigate Sb doping of CdTe, focusing on its limitation as shallow acceptor and the formation of compensating AX center. Paying special attention to supercell size and effects of spin-orbit coupling, we predict an ionization energy of 116 meV in the dilute limit, much closer to recent experimental value of 103 meV from temperature-dependent Hall measurements in bulk single crystals, and in contrast to much larger values from previous calculations. We also find that the Sb-related AX centers are not major compensation centers in Sb-doped CdTe.

14 SOLAR ENERGY↗
DOE OSTI2022

Statistical Performance Analysis on Approximately 320 Perovskite Single- and Two-Junction Solar Cells and Modules from >30 Global Sources

As perovskite photovoltaics (PV) advance from the laboratory to commercial prototypes, their accurate and reliable performance testing is becoming increasingly important. The well documented dynamic response of perovskite solar cells to an external applied voltage has led to the development of steady-state performance measurement methods; however, these methods have not been widely adopted by the perovskite PV community. A key reason for this is that steady-state measurement methods take tens of minutes to complete, as opposed to conventional "fast" current-voltage (I-V) measurements usually lasting a few seconds. Fast I-Vs arise from a snapshot, almost always not a steady-state condition of the device; however, given their widespread use, the question arises: how do performance parameters of perovskite PV compare when measured with fast I-V and with a steady-state method? We compile results from ca. 320 perovskite PV cells and modules, including single junction, and two-terminal perovskite-perovskite and perovskite-Si tandems, and show that fast I-Vs can provide a useful measure of the open-circuit voltage of the devices, while the short-circuit current and the overall efficiency can be widely misestimated. We discuss implications of these findings on performance testing protocols and propose possible options for fast and accurate testing of perovskite PV.

asymptotic↗
DOE OSTI2023

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

buffer layers↗
DOE OSTI2023

12.3% Efficient Lifted-Off and Reconstructed As-Doped CdTe Thin Film Solar Cell

CdTe:As devices grown by MOCVD in the superstrate configuration have been reconfigured to a substrate structure, by employing a cleaving and reconstruction technique. Indium and aluminium doped Zinc oxide (IZO and AZO) layers were used as the transparent front interface without a metal grid. A substrate efficiency of 12.3% was realized with AZO front contact, retaining 80% of the superstrate device efficiency and an impressive approximately 99% of the open-circuit voltage. The IZO-based substrate device on the other hand performed at approximately 69 % retained efficiency. The crucial role of front interfaces is highlighted by the two contacts used here. The results in this work show promise for the development of highly efficient substrate CdTe:As devices.

II-VI semiconductor materials↗
DOE OSTI2024

1.1 eV GaInAs Cell Development for Dual-Use Solar and 1070 nm Laser Power Converters

Dual-use power converter cells can receive solar and laser power simultaneously to generate current, an application relevant to space and terrestrial industries. This study investigates two concepts of solar cells optimized for dual-use 1070 nm laser and solar power conversion, a single-junction and triple-junction cell. Because it is bandgap-tuned for a 1070 nm laser, the 1.1 eV junction is incorporated into each of the two designs, making its development key to the success of both concepts. Efficiency data for a one junction GaInAs cell demonstrates a laser conversion efficiency of 38% at 1070nm wavelength without an anti-reflection coating. However, the single-junction device requires optimization to reduce short wavelength absorption of the broad solar spectrum. In both devices, the graded buffer layers in the GaInAs cell affects the cell's performance by reducing threading dislocations in the active junction. However, the buffer in the three-junction device also acts as a lateral transport layer and so affects the fill factor depending on its sheet resistance. By varying the buffer thickness, we demonstrate a direct relationship between buffer thickness and sheet resistance reduction, while considering implications to open-circuit voltages. We also performed resistance modeling to determine the optimal grid spacing and thickness of the grid fingers to minimize losses due to sheet resistance and grid shading.

junctions↗