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DOE OSTI2024

Design and optimization of higher order mode couplers for the superconducting cavities of the PERLE energy recovery linac

The Powerful Energy Recovery Linac for Experiments (PERLE) is an energy recovery linac (ERL) facility based on superconducting radio-frequency (SRF) technology to be hosted at the Laboratoire de Physique des 2 Infinis Irène Joliot-Curie (IJCLab) in France. With a target beam power of 10 MW, PERLE aims to demonstrate the high-current, continuous wave, multi-pass operation to validate options for future high-energy machines, such as the 50 GeV ERL proposed for the Large Hadron electron Collider (LHeC) and the Future Circular electron-hadron Collider (FCC-eh), and host dedicated particle physics and nuclear experiments. In high-current ERLs, the regenerative Beam Breakup (BBU), emerging from the beam and cavity Higher Order Modes (HOMs) interaction, is a major concern for their stable operation. Beam-induced HOMs can increase the cavity heat load at cryogenic temperature and cause beam instabilities. HOM couplers are installed in the cavity beam pipes to absorb HOM energy and mitigate these effects. This thesis presents the design and optimization of several coaxial HOM couplers for the 5-cell 801.58 MHz elliptical Nb cavities of the 500 MeV PERLE ERL configuration. The RF transmission of the HOM couplers was optimized to enhance the damping of the most dangerous HOMs. The optimized HOM couplers were integrated into endgroups to simulate their damping performance and thermal behavior. The optimized HOM couplers were 3D-printed in epoxy and copper-coated. Low-power RF measurements were conducted on the produced HOM couplers installed in copper PERLE-type cavities to validate their damping performance and propose several endgroups for the PERLE 5-cell cavity to mitigate HOMs below the BBU instability limits.

Barbagallo, Carmelo↗

DOE OSTI2020

Growth and Properties of Vapor Diffused Nb3Sn Coating for Superconducting Radiofrequency Accelerator Cavity Applications

The desire to reduce construction and operating costs of future SRF accelerators motivates the search for higher-performing alternative materials. Nb3Sn (Tc ~ 18.3 K and Hsh ~ 425 mT) is the front runner. The tin vapor diffusion process is currently the technique of choice to produce promising Nb3Sn-coated cavities. Understanding Nb3Sn nucleation and growth in this process is essential to progress. Samples representing different stages of Nb3Sn formation have been produced and studied to elucidate the effects of nucleation, growth, process conditions, and impurities. Nb3Sn films with thickness from a few hundred nm up to ~15 µm were grown and characterized. The microscopic examination of samples suggests the mechanisms of thin film nucleation and growth. Broadly, nucleation deposits tin as a thin surface phase and, under some conditions, a few hundred nanometer sized particles as well. Conditions that impair nucleation promote the formation of defects, such as ?patches?, in subsequent coating growth. Analysis of coated samples is consistent with the model of Nb3Sn grown in which tin diffuses via grain boundaries to Nb3Sn-Nb interface, where the growth Nb3Sn into the niobium bulk takes place. Similar scaling laws are found for grain growth and layer thickness. Non-parabolic layer growth is consistent with significant grain growth, which reduces the number of Sn-transport channels. Examination of patchy region in Nb3Sn coating revealed it to be large single crystalline grains, pointing to impeded Nb3Sn layer growth due to low grain boundary density, resulting in a significantly thin coating in those areas. Examination of RF loss regions from a coated cavity, identified with a thermometry mapping system showed patchy regions and carbonus defects were associated with strong local field-dependent surface resistance. RF measurements of coated cavities were combined with material characterization of witness samples and coated-cavity cutouts to improve the coating process. Understanding obtained and applied to cavity coatings, resulted in single-cell Nb3Sn cavities with a quality factor of ~2 ×1010 up to 15 MV/m accelerating gradient at 4 K, without "Wuppertal" Q-slope. We have also produced Nb3Sn-coated CEBAF 5-cell cavities with accelerating gradients useful for accelerator cryomodules. This dissertation will discuss the genesis of the Nb3Sn coating in a typical tin vapor diffusion process, effects of different process parameters, and its consequences to the coating of single-cell and multi-cell SRF cavities.

Pudasaini, Uttar↗

DOE OSTI2026

Nb3Sn Superconducting Radiofrequency Cavity Fabricated by Sputter Deposition from a Stoichiometric Target

Nb$_3$Sn is a promising coating material for superconducting radiofrequency cavities in next-generation accelerators due to its higher superconducting transition temperature (~18.3 K) and superheating field (~400 mT), offering the potential to surpass the intrinsic performance limits of bulk niobium. We developed a sputter coating technique employing a stoichiometric target to fabricate Nb$_3$Sn films on the inner surfaces of niobium cavities. A Nb$_3$Sn tube target, prepared by growing a >20 m thick Nb$_3$Sn coating on the surface of a Nb tube via a Sn vapor diffusion process, was used in a DC cylindrical magnetron sputtering system. Approximately 170 nm thick Nb-Sn films were sputter-coated onto flat Nb substrates positioned to replicate the beam tube and equator regions of a 2.6 GHz cavity, followed by annealing at 950 °C for 3 hours to form Nb$_3$Sn. The composition, morphology, and structure of the annealed Nb$_3$Sn films were examined. Then, a ~1.2 m-thick film was sputter-coated onto the interior of a 2.6 GHz Nb cavity following the procedure developed for the flat samples. The cavity was subsequently annealed under the same conditions used for the flat samples. Cryogenic RF testing of the sputter-coated cavity demonstrated a T$_c$ of approximately 17.8 K, consistent with Nb$_3$Sn layer. Subsequently, the cavity underwent a light Sn recoating followed by a vapor diffusion Nb$_3$Sn coating process, achieving a quality factor of approximately 8.5 × 10$^9$ and an accelerating gradient of up to 11.3 MV/m at 4.2 K.

Shakel, Md Sharifuzzaman [Old Dominion U.; Jeffers↗

DOE OSTI2022

RF Technologies for Future Colliders

Particle colliders remain indispensable scientific instruments to discover and study new elementary particles and fundamental forces of nature. Whether the collider is a factory (used to improve precision of measuring properties of already discovered particles or to enable studies of rare decay channels), an energy frontier machine (aimed at discovering new particles and forces), a heavy ion collider (allowing studies of what the universe looked like in the early moments after its creation), or an electron-hadron collider (where electrons are used for probing heavy ions or protons to study the fundamental force binding all visible matter), the radio frequency technologies play a key role in enabling the machine to reach its goals. This article considers challenges presented to the radio frequency technologies by the next generation of particle colliders and reviews R&D approaches and directions to address these challenges.

43 PARTICLE ACCELERATORS↗

DOE OSTI2020

Hybrid semiconductor-piezoacoustic radiofrequency device

An amplifying radiofrequency device includes a piezoelectric film and a semiconductor amplifier layer. The piezoelectric film is conformed as an acoustic waveguide. The piezoelectric film has a principal acoustic propagation direction parallel to the principal conduction direction of the amplifier layer. Interdigitated transducers are positioned on the piezoelectric film to respectively launch an acoustic wave in response to an input RF signal, and transduce the acoustic wave back to an output RF signal. There is a distance of less than the acoustic wavelength between the semiconductor amplifier layer and the piezoelectric film. The piezoelectric film has a thickness of less than the acoustic wavelength. According to a method for making such a device, a stack of III-V layers is epitaxially grown on a III-V substrate, wherein the stack comprises a first etch stop layer, a second etch stop layer, an amplifier layer, and a contact layer. The stack is bonded to a lithium niobate film. The III-V substrate is removed by etching down to the first etch stop layer. Deposition windows are opened by etching from the first etch stop layer down to the contact layer. Metal contact electrodes are deposited in the deposition windows.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Tailoring Growth Interfaces of Virtual Substrates for Power Electronics

Power electronics materials are poised to play a critical role in fulfilling next generation energy needs, with up to 90% of future energy demand predicted to flow through power electronics at some point.[1] Among a number of candidate materials, AlxGa1-xN is the strongest, having bipolar dopability, thermal and chemical stability, an ultra-wide bandgap, and demonstrated experimental feasibility. However, AlGaN growth is limited by a lack of lattice-matched substrates, ultimately stunting material quality at higher thicknesses needed for power electronics applications. Further, high power applications increasingly call for fully vertical device structures, necessitating a conductive substrate. [1] Recently our group identified the (111) plane of TaC as a conductive surface lattice-matched to Al0.55Ga0.45N, taking inspiration from prior work of AlN and GaN binaries on carbide and boride substrates. [2,3,4] In this talk we demonstrate the growth of (111)-oriented TaC by RF sputtering. We investigate the interface of TaC with sapphire and SiC substrates and identify means to suppress competing Ta2C nucleation in order to stabilize (111)-oriented TaC. Potential stacking sequences are identified with respect to crystal structure and observed twinning in the TaC films. We next assess structural changes and film recrystallization that results from face-to-face annealing of TaC thin films at high temperatures above 1500 degrees Celsius. Changes to grain structure and domain size are assessed by x-ray diffraction and surface morphology is explored using atomic force microscopy. Figure 1 shows significant improvements to in- and out-of-plane strain following annealing along with the formation of terraced step edges at the film surface. Strain as a function of material composition and thickness is considered, as this may play a major role in future nucleation of AlGaN layers.

CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SU↗

DOE OSTI2020

Tunable semiconductor laser with two acousto-optic tunable filters in its external cavity

We report a laser with a linear external cavity containing a near-IR injection semiconductor optical amplifier as a gain element and two acousto-optic tunable filters (AOTFs) with quasi-collinear interaction of acoustic and light waves. At identical frequencies of RF signals that control the filters and ensure compensation for the Doppler frequency shift of light passing through the AOTFs, the steady-state laser emission linewidth can be reduced to about 25 MHz, which is almost three orders of magnitude smaller than that in the case of one filter (20 GHz). The position of the emission line, which remains narrow, slowly fluctuates within a spectral range about 3 GHz wide, which seems to be due to the large length of the external cavity and insufficient thermal stabilization of its components. This does not prevent us from obtaining light with a large coherence length. In emission wavelength sweep mode, the instantaneous emission linewidth increases with tuning rate, reaching 0.022 nm (8.8 GHz) at the highest tuning rate: 10{sup 4} nm s{sup −1}. In the case of automatic control over the output optical power at a level of 3 mW, the tuning range is 815 – 875 nm. Such instruments are of practical interest for optical coherence tomography, spectroscopy, optical metrology, and other application areas. (lasers)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2023

Electropolishing parameters study for surface smoothening of low-$\beta$650 MHz five-cell niobium superconducting radio frequency cavity

Electropolishing (EP) is applied to niobium (Nb) superconducting radio frequency (SRF) cavities, which are used in particle accelerators for their surface treatment. The EP process for 1.3 GHz cavities has been extensively studied earlier. In this work, a parametric study on EP of low-β (0.61) 650 MHz Nb SRF cavities (LB650), which will be used in pre-production cryomodule for proton improvement plan-II (PIP-II) linear accelerator, was conducted to determine adequate EP conditions for attaining a smooth surface of the cavities. EP performed with the standard parameters and an initial cathode (cathode-I) having a cathode surface area of ~5% of the cavity surface area yielded a rough equator surface of the cavity. The grain step height on the equator weld position was measured to be ~ 32 μm. The rough surface was attributed to preferential grain etching confirmed by a polarization curve showing a linear relationship between the EP current and voltage and the absence of the current plateau region. The cathode was modified to make its surface area twice that of cathode-I. The modified cathode (cathode-M) provided a current plateau region in the corresponding I-V curves measured at different cavity temperatures. The onset voltage for the plateau was found to be higher at higher cavity temperatures. Here this study revealed that even with cathode-M, the standard 18 V was low for EP of such large-sized cavities when the cavity temperature was 18 °C. EP performed at a higher voltage of 22–24.5 V with cathode-M yielded a smooth surface with a grain step height of only 0.6 μm. The applied EP conditions also improved removal uniformity along the cavity length. In contrast to the cavity treated with cathode-I, the cavities treated with cathode-M achieved a significantly higher accelerating gradient (E acc ) in vertical tests conducted in a cryostat at 2 K. The modified EP was found efficient to produce the cavities that achieved E acc of 22.4 MV/m, required by PIP II project in the baseline RF tests, to qualify for further surface processing used to enhance their quality factors.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2023

Status and future plans for C 3 R&D

C 3 is an opportunity to realize an e + e - collider for the study of the Higgs boson at √s = 250 GeV, with a well defined upgrade path to 550 GeV while staying on the same short facility footprint. C 3 is based on a fundamentally new approach to normal conducting linear accelerators that achieves both high gradient and high efficiency at relatively low cost. Given the advanced state of linear collider designs, the key system that requires technical maturation for C 3 is the main linac. This paper presents the staged approach towards a facility to demonstrate C 3 technology with both Direct (source and main linac) and Parallel (beam delivery, damping ring, ancillary component) R&D. The primary goal of the C 3 Demonstration R&D Plan is to reduce technical and cost risk by building and operating the key components of C 3 at an adequate scale. This R&D plan starts with the engineering design, and demonstration of one cryomodule and will culminate in the construction of a 3 cryomodule linac with pre-production prototypes. This R&D program would also demonstrate the linac rf fundamentals including achievable gradient and gradient stability over a full electron bunch train and breakdown rates. It will also investigate beam dynamics including energy spread, wakefields, and emittance growth. This work will be critical to confirm the suitability of the C 3 beam parameters for the physics reach and detector performance in preparation for a Conceptual Design Report (CDR), as well as for follow-on technology development and industrialization. The C 3 Demonstration R&D Plan will open up significant new scientific and technical opportunities based on development of high-gradient and high-efficiency accelerator technology. It will push this technology to operate both at the GeV scale and mature the technology to be reliable and provide high-brightness electron beams. The timeline for progressing with C 3 technology development will be governed by practical limitations on both the technical progress and resource availability. It consists of four stages: Stage 0) Ongoing fundamental R&D on structure prototypes, damping and vibrations. Stage 1) Advancing the engineering maturity of the design and developing start-to-end simulations including space-charge and wakefield effects. This stage will include testing of strucutres operating at cryogenic temperatures. Beam tests would be performed with high beam current to test full beam loading. Stage 2) Production and testing of the first cryomodule at cryogenic temperatures. This would provide sufficient experimental data to compile a CDR and it is anticipated for Stage 2 to last 3 years and to culminate with the transport of photo-electrons through the first cryomodule. Stage 3) Updates to the engineering design of the cryomodules, production of the second and third cryomodule and their installation. Lower charge and lower emittance beams will be used to investigate emittance growth. The successful full demonstration of the 3 cryomodules to deliver up to a 3 GeV beam and achieve the C 3 five gradient will allow a comprehensive and robust evaluation of the technical design of C 3 as well as mitigate technical, schedule, and cost risks required to proceed with a Technical Design Report (TDR).

radiation hardened magnets↗