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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS1969

Dielectric materials for use in thin-film capacitors

Investigation report presents details of dielectric properties of various metals measured at 300 degrees K for thermally evaporated oxides from 300 to 6000 A in thickness. It is relevant to the medium of integrated circuitry.

Carr, H. E.↗
NASA NTRS1975

Improved fabrication of electrolytic capacitors

After processing parts for assembly, insulative cup is fitted to bottom of can, then electrolytic solution consisting of white sulfuric acid gel is inserted into can. Pellet is put in can and is fitted tightly into cup. Finally, bead weld is formed between can and header plug.

Gamari, F. J.↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
NASA NTRS1978

Trapping effects in irradiated and avalanche-injected MOS capacitors

The trapping parameters for holes, and for electrons in the presence of trapped holes, have been measured from a set of wafers with different oxide thickness processed under controlled conditions. The trap cross-sections and densities indicate at least three trap species, including an interfacial species, a dominant bulk species which is determined to tail off from the silicon interface, and a third, lower density bulk species that is distributed throughout the oxide.

Bakowski, M.↗
NASA NTRS1980

Measuring radiation effects on MOS capacitors

Electron injection technique serves as powerful probe of trapped hole distribution after irradiation because it was determined that electrons only annihilate trapped holes. Other effects, such as other electron traps and interface state generation, are negligible in injection range used. Trap cross sections and densities indicate at least three trap species; interfacial species, dominant bulk species determined to tail off from silicon interface, and lower density and cross section species that may be distributed throughout bulk of oxide.

Bakowski, M.↗
NASA NTRS1981

Specifying capacitors for performance and reliability in switching power supplies

The three most commonly used switching circuits are the full bridge converter, the half bridge converter, and the forward converter. All three circuits use the same pulse width concept for regulation with the major difference being how many transistors are used for power handling. The full bridge uses four transistors, the half bridge uses two, and the forward converter uses one. In practical design, forward converters are used at 300 watts and below, half bridges at 300 to 600 watts, and full bridges above 600 watts. Regulation is achieved by alternately saturating diagonal pairs of transistors in the full bridge, alternately saturating transistors in the half bridge, and simply pulse modulating one transistor in the forward converter.

Greenhalgh, F. E.↗
NASA NTRS1981

Ultrasonic scanning of multilayer ceramic chip capacitors

Ultrasonic scanning is compared to neutron radiography and scanning laser acoustic microscopy (SLAM). Data show that SLAM and ultrasonic scanning evaluations are in good agreement. There is poor agreement between N-ray and both ultrasonic techniques because N-ray is insensitive to all but the grossest delaminations. Statistical analysis show a good correlation between ultrasonic scanning and destructive physical analysis.

Bradley, F. N.↗
NASA NTRS1981

Capacitor DPA: Does it do any good?

Methods of destructive physical analysis (DPA) are suggested which might have more usefulness if the procedures followed lines of accelerated testing. A brief presentation of DPA procedures is followed by a discussion of their value.

Porter, D. C.↗
NASA NTRS1983

Plasma polymerized high energy density dielectric films for capacitors

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Yamagishi, F. G.↗
NASA NTRS1984

Forecasting of high voltage insulation performance: Testing of recommended potting materials and of capacitors

Nondestructive high voltage test techniques (mostly electrical methods) are studied to prevent total or catastrophic breakdown of insulation systems under applied high voltage in space. Emphasis is on the phenomenon of partial breakdown or partial discharge (P.D.) as a symptom of insulation quality, notably partial discharge testing under D.C. applied voltage. Many of the electronic parts and high voltage instruments in space experience D.C. applied stress in service, and application of A.C. voltage to any portion thereof would be prohibited. Suggestions include: investigation of the ramp test method for D.C. partial discharge measurements; testing of actual flight-type insulation specimen; perfect plotting resin samples with controlled defects for test; several types of plotting resins and recommendations of the better ones from the electrical characteristics; thermal and elastic properties are also considered; testing of commercial capaciters; and approximate acceptance/rejection/rerating criteria for sample test elements for space use, based on D.C. partial discharge.

Bever, R. S.↗
NASA NTRS1986

Rotating Capacitor Measures Steady Electric Fields

Portable sensor measures electric fields created by dc powerlines or other dc-high-voltage sources. Measures fields from 70 to 50,000 V/m with linearity of 2 percent. Sensor used at any height above ground. Measures both magnitude and direction of field and provides signals representing these measurements to remote readout device. Sensor functions with minimal disturbance of field it is measuring.

Johnston, A. R.↗
NASA NTRS1989

Advanced double layer capacitors

There is a need for large amounts of power to be delivered rapidly in a number of airborne and space systems. Conventional, portable power sources, such as batteries, are not suited to delivering high peak power pulses. The charge stored at the electrode-electrolyte double layer is, however, much more assessible on a short time scale. Devices exploiting this concept were fabricated using carbon and metal oxides (Pinnacle Research) as the electrodes and sulfuric acid as the electrolyte. The approach reported, replaces the liquid sulfuric acid electrolyte with a solid ionomer electrolyte. The challenge is to form a solid electrode-solid ionomer electrolyte composite which has a high capacitance per geometric area. The approach to maximize contact between the electrode particles and the ionomer was to impregnate the electrode particles using a liquid ionomer solution and to bond the solvent-free structure to a solid ionomer membrane. Ruthenium dioxide is the electrode material used. Three strategies are being pursued to provide for a high area electrode-ionomer contact: mixing of the RuOx with a small volume of ionomer solution followed by filtration to remove the solvent, and impregnation of the ionomer into an already formed RuOx electrode. RuOx powder and electrodes were examined by non-electrochemical techniques. X-ray diffraction has shown that the material is almost pure RuO2. The electrode structure depends on the processing technique used to introduce the Nafion. Impregnated electrodes have Nafion concentrated near the surface. Electrodes prepared by the evaporation method show large aggregates of crystals surrounded by Nafion.

Sarangapani, S.↗