Search NASA⌕ Search

SEARCH · Search NASA

Results for “Effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Effect of temperature on the fatigue cracking mechanisms in A356 Al alloy

This work builds on our previous investigation of the room temperature fatigue cracking mechanisms of an A356 Al alloy. Here, we analyze the elevated temperature fatigue cracking mechanisms in cast and friction stir processed (FSP) A356, and contrast them with the room temperature behavior. Two sets of FSP parameters were used to modify the microstructure of the cast alloy. After heat treatment, both the FSPed microstructures exhibited severe abnormal grain growth (AGG) leading to a very wide grain size distribution (from a few microns to a few millimeters). During room temperature fatigue tests, the FSP conditions exhibited significant improvements in fatigue lives, even up to an order of magnitude. However, with increasing temperature, the difference in the performance of the FSPed and Cast microstructures decreased until, at 200 °C, all three microstructural conditions exhibited similar fatigue response. Detailed electron back scattered diffraction (EBSD) imaging of failed fatigue specimens was used to study crack behavior. At room temperature, cracks initiated at defect sites or along persistent slip bands (PSBs) and propagated transgranularly. The grain boundaries acted as barriers to crack growth. At elevated temperatures, there was a complete role reversal of the grain boundaries. Cracks initiated along grain boundaries and propagated intergranularly in all microstructures. Below, we explore this transition of the cracking mechanism in detail.

Nelaturu, Plalgun↗
DOE OSTI2020

Over 11% Efficient Eco-Friendly Kesterite Solar Cell: Effects of S-Enriched Surface of Cu2ZnSn(S,Se)4 Absorber and Band Gap Controlled (Zn,Sn)O Buffer

For high efficiency kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cell, CdS thin film was usually used as a buffer layer. However, due to the toxicity of Cd and pollution problems involved from the solution-based chemical bath deposition, eco-friendly high efficiency CZTSSe solar cell with Cd-free buffer is necessary. As an Cd-free buffer layer, we investigated (Zn,Sn)O (ZTO) film deposited by sputtering method. In order to achieve high power conversion efficiency, we controlled energy band gaps of CZTSSe absorber as well as ZTO buffer, which was required to optimize conduction band offset (CBO) between the absorber and the buffer and to increase open circuit voltage (Voc) and fill factor (FF). The CBO was optimized by controlling the band gap of ZTO. By varying the Sn/(Zn + Sn) ratio and its deposition temperature, band gap of ZTO was successfully adjusted. Experimental and computational calculation results showed that solar cell performance was strongly affected by the CBO between absorber and buffer. Besides CBO matching, larger band gap of ZTO improved short circuit current density (Jsc) with enhanced external quantum efficiency value in blue photon spectrum range. As an additional way to improve power conversion efficiency of solar cell, band graded CZTSSe absorber was developed by using spray-based two-step process. The sprayed CZTSSe film was engineered to have S-enriched surface, which makes surface band gap widened and surface passivated, and resultantly increases Voc, Jsc and fill factor (FF). By controlling band gaps of both CZTSSe absorber and ZTO buffer, we obtained 11.22% environment-friendly CZTSSe solar cell without MgF2 anti-reflection coating.

(Zn↗