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NASA NTRS2013

An All-Solid-State, Room-Temperature, Heterodyne Receiver for Atmospheric Spectroscopy at 1.2 THz

Heterodyne receivers at submillimeter wavelengths have played a major role in astrophysics as well as Earth and planetary remote sensing. All-solid-state heterodyne receivers using both MMIC (monolithic microwave integrated circuit) Schottky-diode-based LO (local oscillator) sources and mixers are uniquely suited for long-term planetary missions or Earth climate monitoring missions as they can operate for decades without the need for any active cryogenic cooling. However, the main concern in using Schottky-diode-based mixers at frequencies beyond 1 THz has been the lack of enough LO power to drive the devices because 1 to 3 mW are required to properly pump Schottky diode mixers. Recent progress in HEMT- (high-electron-mobility- transistor) based power amplifier technology, with output power levels in excess of 1 W recently demonstrated at W-band, as well as advances in MMIC Schottky diode circuit technology, have led to measured output powers up to 1.4 mW at 0.9 THz. Here the first room-temperature tunable, all-planar, Schottky-diode-based receiver is reported that is operating at 1.2 THz over a wide (≈20%) bandwidth. The receiver front-end (see figure) consists of a Schottky-diode-based 540 to 640 GHz multiplied LO chain (featuring a cascade of W-band power amplifiers providing around 120 to 180 mW at W-band), a 200-GHz MMIC frequency doubler, and a 600-GHz MMIC frequency tripler, plus a biasable 1.2-THz MMIC sub-harmonic Schottky-diode mixer. The LO chain has been designed, fabricated, and tested at JPL and provides around 1 to 1.5 mW at 540 o 640 GHz. The sub-harmonic mixer consists of two Schottky diodes on a thin GaAs membrane in an anti-parallel configuration. An integrated metal insulator metal (MIM) capacitor has been included on-chip to allow dc bias for the Schottky diodes. A bias voltage of around 0.5 V/diode is necessary to reduce the LO power required down to the 1 to 1.5 mW available from the LO chain. The epilayer thickness and doping profiles have been specifically optimized to maximize the mixer performance beyond 1 THz. The measured DSB noise temperatures and conversion losses of the receiver are 2,000 to 3,500 K and 12 to 14 dB, respectively, at 120 K, and 4,000 to 6,000 K and 13 to 15 dB, respectively, at 300 K. These results establish the state-of-the-art for all-solid-state, all-planar heterodyne receivers at 1.2 THz operating at either room temperature or using passive cooling only. Since no cryogenic cooling is needed, the receiver is eminently suited to atmospheric heterodyne spectroscopy of the outer planets and their moons.

Siles, Jose V.↗

DOE OSTI2025

Low Cost High-Performance HRE-Free 3-in-1 Electric Drive Unit

The project team completed work to expand upon American Axle & Manufacturing’s (AAM) baseline technology and develop a high-speed, AC induction electric drive unit (EDU) with total direct-oil-cooling and integrated power electronics. The project accelerated advancements in EDU technology by allowing AAM to build upon the progress made in developing the underlying baseline technologies. The following seven improvements to AAM’s baseline technology were implemented in this research and development program: 1) Increased speed (30k RPM) AC induction motor, 2) Silver-sintering of discrete silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFET) to heat sinks, 3) Electrically insulated rotor bars, 4) Optimized lamination steel, 5) EDU-integrated 650VDC inverter package, 6) Over-molded stator with molded liners, and 7) 650VDC power-dense stator design. The successful development of the technology resulted in a meaningful cost reduction for EDU systems in the market. Coupled with falling battery system costs, lower EDU costs will likely accelerate the market acceptance and related production scaling of battery electric vehicles. The objective of this project was to research, develop, and test a Heavy Rare Earth (HRE)-free 3-In-1 electric drive unit (EDU) that has class leading power density and cost. The key technologies to be developed were anticipated to meet or exceed the Department of Energy (DOE) targets of a cost ≤ $\$$7/kilowatt (kW), power density ≥ 12 kW/liter, and operating voltage ≥ 600 VDC.

33 ADVANCED PROPULSION SYSTEMS↗

NASA NTRS2005

Dusty-Plasma Particle Accelerator

A dusty-plasma apparatus is being investigated as means of accelerating nanometer- and micrometer-sized particles. Applications for the dusty-plasma particle accelerators fall into two classes: Simulation of a variety of rapidly moving dust particles and micrometeoroids in outer-space environments that include micrometeoroid streams, comet tails, planetary rings, and nebulae and Deposition or implantation of nanoparticles on substrates for diverse industrial purposes that could include hardening, increasing thermal insulation, altering optical properties, and/or increasing permittivities of substrate materials. Relative to prior apparatuses used for similar applications, dusty-plasma particle accelerators offer such potential advantages as smaller size, lower cost, less complexity, and increased particle flux densities. A dusty-plasma particle accelerator exploits the fact that an isolated particle immersed in plasma acquires a net electric charge that depends on the relative mobilities of electrons and ions. Typically, a particle that is immersed in a low-temperature, partially ionized gas, wherein the average kinetic energy of electrons exceeds that of ions, causes the particle to become negatively charged. The particle can then be accelerated by applying an appropriate electric field. A dusty-plasma particle accelerator (see figure) includes a plasma source such as a radio-frequency induction discharge apparatus containing (1) a shallow cup with a biasable electrode to hold the particles to be accelerated and (2) a holder for the substrate on which the particles are to impinge. Depending on the specific design, a pair of electrostatic-acceleration grids between the substrate and discharge plasma can be used to both collimate and further accelerate particles exiting the particle holder. Once exposed to the discharge plasma, the particles in the cup quickly acquire a negative charge. Application of a negative voltage pulse to the biasable electrode results in the initiation of a low-current, high-voltage cathode spot. Plasma pressure associated with the cathode spot as well as the large voltage drop at the cathode spot accelerates the charged particles toward the substrate. The ultimate kinetic energy attained by particles exiting the particle holder depends in part on the magnitude of the cathode spot sheath potential difference, which is proportional to the magnitude of the voltage pulse, and the on the electric charge on the dust. The magnitude of the voltage pulse can be controlled directly, whereas the particle s electric charge can be controlled indirectly by controlling the operating parameters of the plasma apparatus.

Foster, John E.↗

NASA NTRS2015

Direct Drive Solar-Powered Arcjet Thruster

Electric thrusters typically require a power processing unit (PPU) to convert the spacecraft-provided power to the voltage and current that a thruster needs for operation. NASA Marshall Space Flight Center has initiated fundamental studies on whether an arcjet thruster can be operated directly with the power produced by solar arrays without any additional conversion. Elimination of the PPU significantly reduces system-level complexity of the propulsion system, and lowers developmental cost and risk. The proposed work will aim to refine the proof-of-concept presently being assembled and begin to identify and address technical questions related to power conditioning and noise suppression in the system, and heating of the thruster in long-duration operation. The apparatus proposed for investigation has a target power level of 400 to 1,000 W. The proposed direct-drive arcjet is potentially a highly scalable concept, applicable to spacecraft with up to hundreds of kilowatts and beyond. The design of the arcjet built for this effort was based on previous low power (1 kW class) arcjets.1-3 It has a precision machined 99.95% pure tungsten anode that also serves as the nozzle with a 0.040-in- (1-mm-) diameter, 0.040-in-long constrictor region. An additional anode with a 0.020-in- (0.5-mm-) diameter, 0.020-inlong constrictor region was purchased, but has not yet been used. The cathode is a 0.125-in-diameter tungsten welding electrode doped with lanthum-oxygen; its tip was precision ground to a 308deg angle and terminates in a blunt end. The two electrodes are separated by a boron-nitride insulator that also serves as the propellant manifold; it ends in six small holes which introduce the propellant gas in the diverging section of the nozzle, directly adjacent to the cathode. The electrodes and insulator are housed in a stainless-steel outer body, with a Macor insulator at the mid-plane to provide thermal isolation between the front and back halves of the device. The gas seals were made using Grafoil gaskets. Figure 1(a) shows the assembled thruster; figure 1(b) shows the thruster in the vacuum chamber with electrical and propellant connections.

Polzin, Kurt↗

NASA NTRS2008

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗

DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10’s of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with 7 kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5 kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

insulation resistance↗

DOE OSTI2025

Diffusion of acceptor dopants in monoclinic 𝛽−Ga 2⁢ O 3

𝛽−Ga 2 ⁢O 3 is a promising material for next-generation power electronics because of its ultrawide band gap and high critical breakdown voltage. However, realizing its full potential requires precise control over dopant incorporation and stability. In this work, we use first-principles calculations to systematically assess the diffusion behavior of eight potential deep-level substitutional acceptors (Au, Ca, Co, Cu, Fe, Mg, Mn, and Ni) in 𝛽−Ga 2 ⁢O 3 . We consider two key diffusion mechanisms: (i) interstitial diffusion under nonequilibrium conditions relevant to ion implantation, and (ii) trap-limited diffusion (TLD) under near-equilibrium thermal annealing conditions. Our results reveal a strong diffusion anisotropy along the 𝑏 and 𝑐 axes, with dopant behavior governed by competition between diffusion and incorporation (or dissociation) activation energies. Under interstitial diffusion, Ca$^{2+}_{i}$ and Mg$^{2+}_{i}$ show the most favorable combination of low migration and incorporation barriers, making them promising candidates for efficient doping along the 𝑏 and 𝑐 axes, respectively. In contrast, Au$^{+}_{i}$ diffuses readily, but exhibits an incorporation barrier that exceeds 5 eV, rendering it ineffective as a dopant. From a thermal stability perspective, Co$^{2+}_{i}$ shows poor activation but high diffusion barriers, which may suppress undesirable migration at elevated temperatures. Under trap-limited diffusion, the dissociation of dopant-host complexes controls mobility. Mg$^{2+}_{i}$ again emerges as a leading candidate, exhibiting the lowest dissociation barriers along both axes, whereas Co$^{2+}_{i}$ and Fe$^{2+}_{i}$ display the highest barriers, suggesting improved dopant retention under thermal stress. In conclusion, our findings guide dopant selection by balancing activation and thermal stability, essential for robust semi-insulating substrates.

Defects↗

DOE OSTI2023

Spread Spectrum Time Domain Reflectometry (SSTDR) and Frequency Domain Reflectometry (FDR) for Detection of Cable Anomalies Using Machine Learning

Cables are initially qualified for nuclear power plant use for 40 years. As plants extend their operating license to 60 and 80 years, continued use of these cables must shift to a performance-based approach since it is cost prohibitive to completely replace cables that are likely still capable of performing their design function. A variety of cable tests are available and are commonly applied during outages when the cables can be taken out of service. Frequency domain reflectometry (FDR) is one of these test methods that is being more broadly accepted and used because it not only detects anomalies along the cable with a low-voltage signal that does not stress the cable insulation, but the technique also locates the anomalies. This supports follow-up local inspection and local repair or partial replacement of a damaged cable segment. Currently, FDR testing is only applied to cables that are taken out of service since the test instrument would be damaged by operational voltages. A related technology that has found some acceptance in the aircraft and rail industry is spread spectrum time domain reflectometry (SSTDR). This technology has been implemented with a custom commercial instrument by LiveWire Innovation Inc. that is designed to operate on live cables up to 1000 volts. One of the main conclusions of a previous effort was that cable reflectometry plots can be difficult for humans to analyze due to baseline noise, low or noisy anomaly response peaks, or large responses from cable ends. Detection of cable anomalies for many of these frequencies and test conditions was challenging for manual analysis. This presented an ideal opportunity for ML analysis to distinguish undamaged cable indications from anomalous cable indications. This research discusses application of machine learning (ML) to reflectometry cable test methods. The goal was to assess feasibility to distinguish undamaged cable reflectometry responses from damaged or anomalous cable reflectometry responses. The assessment considered the 3 instruments, multiple frequency bandwidths from each instrument, multiple cable anomalies and test conditions, and both supervised and unsupervised ML approaches. Although approaches and analysis methods were not identical or directly comparable, both outputs were encouraging. The unsupervised prediction weighted accuracy was assessed by instrument and by frequency. It performed better at high frequencies with the highest prediction accuracy of 0.84 for the higher frequency FDR, 0.79 for the 48-MHz LiveWire SSTDR, and 0.77 for 300-MHz PNNL SSTDR. The initial weighted accuracy average across all frequencies for using supervised ML was 0.56 to 0.68. The supervised analysis was repeated with noisier training data removed resulting in weighted accuracies of 0.69 to 0.87. These weighted accuracies are not directly comparable due to differences in the supervised and unsupervised analysis details but do indicate an encouraging trend. Even with limited and unbalanced data, strong prediction accuracies seem encouraging for further work including more data under a wider range of conditions.

42 ENGINEERING↗

DOE OSTI2023

Identification and characterization of deep nitrogen acceptors in β-Ga 2 O 3 using defect spectroscopies

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga 2 O 3 ) layers and substrates is critical for β-Ga 2 O 3 high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E C -0.8 eV in the β-Ga 2 O 3 bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E C -2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E C -2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N O(III) ]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga 2 O 3 bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga 2 O 3 .

36 MATERIALS SCIENCE↗

DOE OSTI2023

Ultrasonic waveguide reflectometry for quench detection (CRADA Final Report)

Early detection of thermal runaway (quench) is critical for safely operating high-temperature superconductor (HTS) magnets. Voltage-based techniques provide late detection of quenching in HTS, which can lead to magnet burnout and system damage. Various non-voltage quench-detection approaches are therefore investigated nowadays that are based on magnetic, acoustic, and optical sensing. LBNL has been actively developing the quench detection principle based on diffuse ultrasonic wave propagation since 2017 and has demonstrated the approach's viability with several peer-reviewed publications and a patent application. Over the last decade, Etegent, LBNL partner for this proposal and effort, has been developing a sensing technology that utilizes the propagation of stress waves through the solid metallic and nonmetallic waveguides (WG). The method is based on the dependence of materials' elastic properties and the speed of sound on temperature. Compared with optical analog, acoustic WG operates at much lower frequencies, eliminating the need for expensive, complex, highly sensitive receivers and data processing. Etegent proved this technology in many harsh environments, mainly concentrated high-temperature measurements. The initial contact between LBNL and Etegent started in 2020, aiming at combining our knowledge and effort toward developing a viable ultrasound-based quench detection technique for use with HTS magnets. A preliminary study conducted jointly in 2022 found no principle restrictions for expanding the WG technology toward cryogenic temperature operation. The present CRADA work aimed at designing, building, and testing ultrasonic waveguide temperature sensors at relevant cryogenic conditions, and demonstrating this technology's applicability to detecting heating and quenching in High Temperature Superconductor (HTS)-based cables and magnets. The technical objectives of the project included: (1) Design and fabricate ultrasonic WG sensors suitable for cryogenic operation, (2) Test ultrasonic WGs under cryogenic conditions, (3) Determining a suitable way of insulating WGs to prevent ultrasonic leakage while maintaining good thermal contact with the surrounding medium, (4) WG integration and cryogenic test with HTS conductors and HTS magnets, and (5) Design and basic prototyping of a standalone WG-based quench detection system. This project adds value to the present LBNL magnet diagnostics portfolio and enables a breakthrough in addressing the HTS magnet quench detection challenge.

47 OTHER INSTRUMENTATION↗

DOE OSTI2021

A High-Frequency Planar Transformer with Medium-Voltage Isolation: Preprint

This paper presents the design of a low-loss, high-frequency planar transformer having medium-voltage (10's of kV) isolation capability while transformer primary and secondary windings are interleaved to reduce losses. Medium-voltage isolation between adjacent printed circuit board (PCB) layers is extremely challenging using traditional PCB dielectrics. The isolation requirement is met using PCB with $7$\,kV/mil polyimide (Panasonic Felios RF775) as the dielectric, and by an appropriate layout of the windings and the inter-winding vias. The transformer is used to implement a dual active bridge (DAB) converter in a stackable dc-ac architecture where the dc port is connected to a photovoltaic (PV) string and ac outputs are connected in series to achieve direct PV string-to-medium voltage conversion without the need for low-voltage collection or a bulky line frequency transformer. Since each DAB transformer processes time-varying power, a design methodology is developed to minimize line-cycle-averaged losses. Experimental results are presented for a 1:1 planar transformer in a 7.5\,kW SiC-based dc-to-ac module operating at 200 kHz. Isolation of 26 kV between the primary and secondary layers and between the windings and the core is verified using a hipot tester.

41 EE - Solar Energy Technologies Office (EE-4S)↗

NASA NTRS2010

Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space

This innovation represents a method and circuit realization of a system designed to make in-situ measurements of test solar-cell operational parameters on orbit using readily available high-temperature and high-ionizing-radiation- tolerant electronic components. This innovation enables on-orbit in-situ solar-array health monitoring and is in response to a need recognized by the U.S. Air Force for future solar arrays for unmanned spacecraft. This system can also be constructed out of commercial-grade electronics and can be embedded into terrestrial solar power system as a diagnostics instrument. This innovation represents a novel approach to I-V curve measurement that is radiation and temperature hard, consumes very few system resources, is economical, and utilizes commercially available components. The circuit will also operate at temperatures as low as 55 C and up to +225 C, allowing it to reside close to the array in direct sunlight. It uses a swept mode transistor functioning as a resistive load while utilizing the solar cells themselves as the biasing device, so the size of the instrument is small and there is no danger of over-driving the cells. Further, this innovation utilizes nearly universal spacecraft bus resources and therefore can be readily adapted to any spacecraft bus allowing for ease of retrofit, or designed into new systems without requiring the addition of infrastructure. One unique characteristic of this innovation is that it effects the measurement of I-V curves without the use of large resistor arrays or active current sources normally used to characterize cells. A single transistor is used as a variable resistive load across the cell. This multi-measurement instrument was constructed using operational amplifiers, analog switches, voltage regulators, MOSFETs, resistors, and capacitors. The operational amplifiers, analog switches, and voltage regulators are silicon-on-insulator (SOI) technology known for its hardness to the effects of ionizing radiation. The SOI components used can tolerate temperatures up to 225 C, which gives plenty of thermal headroom allowing this circuit to perhaps reside in the solar cell panel itself where temperatures can reach over 100 C.

Krasowski, Michael J.↗

DOE OSTI2024

Development of a high current density, high temperature superconducting cable for pulsed magnets

Abstract A low AC loss Rare Earth Barium Copper Oxide (REBCO) cable, based on the VIPER cable technology has been developed by Commonwealth Fusion Systems for use in high field, REBCO based tokamaks. The new cable is composed of partitioned and transposed copper ‘petals’ shaped to fit together in a circular pattern with each petal containing a REBCO tape stack and insulated from each other to reduce AC losses. A stainless steel jacket adds mechanical robustness—also serving as a vessel for solder impregnation—while a tube runs through the middle for cooling purposes. Additionally, fiber optic sensors are placed under the tape stacks for quench detection. To qualify this design, a series of experiments were conducted as part of the SPARC tokamak Central Solenoid Model Coil program—to retire the risks associated with full scale, fast ramping, high flux HTS Central Solenoid (CS) and Poloidal Field (PF) coils for tokamak fusion power plants and net energy demonstrators. These risk study and risk reduction experiments include (1) AC loss measurement and model validation in the range of ~5 T/s, (2) an IxB electromagnetic loading of over 850 kN/m at the cable level and up to 300 kN/m at the stack level, (3) a transverse compression resilience of over 350 MPa, (4) manufacturability at tokamak relevant speeds and scales, (5) cable to cable joint performance, (6) fiber optic based quench detection speed, accuracy, and feasibility, and (7) overall winding pack integration and magnet assembly. The result is a cable technology, now referred to as PIT VIPER, with AC losses that measure fifteen times lower (at ~5 T/s) than its predecessor technology; a 2% or lower degradation of critical current (Ic) at high IxB electromagnetic loads; no detectable Ic degradation up to 570 MPa of transverse compression on the cable unit cell; end to end magnet manufacturing, consistently producing Ic values within 7% of the model prediction; cable to cable joint resistances at 20 K on the order of ~15 nΩ; and fast, functional quench detection capabilities that do not involve voltage taps. This cable technology will be tested comprehensively in a Central Solenoid Model Coil to prove its readiness for compact, high field tokamak operation.

Sanabria, Charlie (ORCID:0000000150175309)↗

NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗

DOE OSTI2022

Protection and Restoration Solutions to Reliable and Resilient Integration of Grid-connected PV Installations and Distributed Energy Resources: Design, Testbed, Proof of Work and Impact Studies (Final Report)

To gain a better understanding of the complex transients in a utility grid with a large number of solar PV installations coupled by PWM inverters during the protection and restoration period of the power grid, in this project a kW-level experimental system with dominating inverter-based resources and a hardware-in-loop simulation system with transmission and distribution models, as well as several SEL protective relays have been built and used. The major research findings of the project are summarized below in two perspectives: Experimental research: A self-organized ultra-high frequency solitary waveform is discovered and demonstrated in the hardware experimental system. Despite the familiarities, such a solitary waveform is distinct from any harmonics, transient, or resonance waves in that, it is 1) non-dispersive over time and space, 2) not associated with any active source or the linear superposition of sources, 3) half-cycle asymmetric, 4) not responding to filters or change of system characteristic resonance frequency, 5) ubiquitous as it occurs simultaneously everywhere in the system from DC supply, power lines, and the utility grid, and 6) explosive through tripping the protection or damaging susceptible devices or circuits. Analytical study: The nature of such a new waveform and an analytical explanation of its formation are studied based on related physics and non-linear science principles, with the following highlights: 1) such a new waveform follows the solutions to the Non-linear Schrödinger equation, so the classic linear perturbation theory is unable to explain or predict such a unique waveform as confirmed with the research team of RTDS; 2) the critical condition of occurrence of such a waveform is derived, which indicates that the breakings of solitary wave is a system synchronous issue between the utility grid in the 60Hz phasor domain and duty-ratio modulation of DC sources in the inverter switching frequency domain; 3) such a waveform carries energy mass so it could be detrimental; 4) such a waveform is deceiving as it is not readily detectable in the energy propagation direction by the primary protection equipment, while it is detrimental in the perpendicular direction of energy propagation, i.e. voltage direction. Thus, it has more likely challenges to the second primary equipment and devices, particularly at the weakest link and point such as aging insulation and inappropriate setting of susceptible devices. Therefore, such a waveform can be easily ignored in the aftermath investigation. The intellectual merits: The experimental discovery reveals certain unfamiliar transient phenomena that could challenge the integration of large-scale grid-connected solar PV installation during the group ride-through period of solar PV installations, commissioning of large-solar farms, or dramatic change of solar radiation conditions. Particularly, the research findings suggest that the occurrence of the unfamiliar transient phenomena is uniquely associated with the inverter-based solar PV installation, which is less likely to happen for rotary energy systems. The physics and non-linear science-based research work laid down an analytical path to the challenging transient stability problems including those that have been observed currently and future calls. Both experimental and analytical research results explain the limitation of many current research effects including some DoE research undertakings as well as possible solutions. The broader impacts: The research outcome of the project advances the understanding of the possible transient problems for the integration of inverter-based solar PV installation. It also highlights the theoretical and technical barriers for applying the conventional theory and technology to design and implement countermeasures against their adverse impacts of the large-scale solar PV installation and operation on grid reliability and security. More broadly, the research outcomes have shed some light on the open, fundamental challenges in the integration of large-scale solar photovoltaic energy into current and next-generation power grids across the country, and worldwide. The advanced physics and non-linear science-based analysis open up a path to harmonization of the renewables for societal energy needs via building a resilient and sustainable electric power infrastructure.

14 SOLAR ENERGY↗

DOE OSTI2025

High-Resolution Full-Field Structural Microscopy of the Voltage-Induced Filament Formation in VO 2 -Based Neuromorphic Devices

In order to make neuromorphic functions in memristive devices more efficient, information about the structural properties of filament formation at the micro- and mesoscopic scales is necessary. Despite extensive research on VO 2 , a key material due to its filament formation, local operando structural measurements remain challenging and often involve destructive specimen preparation and long rastering times, greatly limiting the scope of experimental studies. Utilizing dark-field X-ray microscopy (DFXM), a fullfield imaging modality, structural signatures of the filament formation process operando are revealed in VO 2 devices. DFXM experiments illustrate that rutile filaments contain isolated monoclinic clusters, indicating structural nonuniformity interior to the filament. The formation of the rutile phase beneath device electrodes was shown to precede filament development, followed by the formation of filament paths guided by nucleation sites within the device. Finally, a medium-term (<30 min) memory mechanism is observed in VO 2 , mediated by sites within the device gap that tend to switch at significantly lower voltages after electrical cycling, a tendency that persists through a brief thermal reset. High spatial resolution, large field-of-view, structure selectivity, and fast signal acquisition of DFXM provided insight into structural features of the filamentary channel and surrounding regions during voltage cycling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2016

Engineering Model Propellant Feed System Development for an Iodine Hall Thruster Demonstration Mission

CUBESATS are relatively new spacecraft platforms that are typically deployed from a launch vehicle as a secondary payload, providing low-cost access to space for a wide range of end-users. These satellites are comprised of building blocks having dimensions of 10x10x10 cu cm and a mass of 1.33 kg (a 1-U size). While providing low-cost access to space, a major operational limitation is the lack of a propulsion system that can fit within a CubeSat and is capable of executing high (Delta)v maneuvers. This makes it difficult to use CubeSats on missions requiring certain types of maneuvers (i.e. formation flying, spacecraft rendezvous). Recently, work has been performed investigating the use of iodine as a propellant for Hall-effect thrusters (HETs) 2 that could subsequently be used to provide a high specific impulse path to CubeSat propulsion. 3, 4 Iodine stores as a dense solid at very low pressures, making it acceptable as a propellant on a secondary payload. It has exceptionally high ρIsp (density times specific impulse), making it an enabling technology for small satellite near-term applications and providing the potential for systems-level advantages over mid-term high power electric propulsion options. Iodine flow can also be thermally regulated, subliming at relatively low temperature (< 100 C) to yield I2 vapor at or below 50 torr. At low power, the measured performance of an iodine-fed HET is very similar to that of a state-of-the-art xenon-fed thruster. Just as importantly, the current-voltage discharge characteristics of low power iodine-fed and xenon-fed thrusters are remarkably similar, potentially reducing development and qualifications costs by making it possible to use an already-qualified xenon-HET PPU in an iodine-fed system. Finally, a cold surface can be installed in a vacuum test chamber on which expended iodine propellant can deposit. In addition, the temperature doesn't have to be extremely cold to maintain a low vapor pressure in the vacuum chamber (it is under 10(exp −6) torr at −75 C), making it possible to 'cryopump' the propellant with lower-cost recirculating refrigerant-based systems as opposed to using liquid nitrogen or low temperature gaseous helium cryopanels. In the present paper, we describe the design and testing of the engineering model propellant feed system for iSAT (see Fig. 1). The feed system is based around an iodine propellant reservoir and two proportional control valves (PFCVs) that meter the iodine flow to the cathode and anode. The flow is split upstream of the PFCVs to both components can be fed from a common reservoir. Testing of the reservoir is reported to demonstrate that the design is capable of delivering the required propellant flow rates to operate the thruster. The tubing and reservoir are fabricated from hastelloy to resist corrosion by the heated gaseous iodine propellant. The reservoir, tubing, and PFCVs are heated to ensure the sublimed propellant will not re-deposit within the feed system. Heating is accomplished through a number of individual zones to control the overall power expended on heating the system and insulation is employed to minimize the amount of power used to heat the system prior to thruster operation.

Polzin, Kurt A.↗

DOE OSTI2024

Percolative phase transition in few-layered MoSe 2 field-effect transistors using Co and Cr contacts

The metal-to-insulator phase transition (MIT) in two-dimensional (2D) materials under the influence of a gating electric field has revealed interesting electronic behavior and the need for a deeper fundamental understanding of electron transport processes, while attracting much interest in the development of next-generation electronic and optoelectronic devices. Although the mechanism of the MIT in 2D semiconductors is a topic under debate in condensed matter physics, our work demonstrates the tunable percolative phase transition in few-layered MoSe 2 field-effect transistors (FETs) using different metallic contact materials. Here, we attempted to understand the MIT through temperature-dependent electronic transport measurements by tuning the carrier density in a MoSe 2 channel under the influence of an applied gate voltage. In particular, we have examined this phenomenon using the conventional chromium (Cr) and ferromagnetic cobalt (Co) as two metal contacts. For both Cr and Co, our devices demonstrated n-type behavior with a room-temperature field-effect mobility of 16 cm 2 V −1 s −1 for the device with Cr-contacts and 92 cm 2 V −1 s −1 for the device with Co-contacts, respectively. Further, with low temperature measurements at 50 K, the mobilities increased significantly to 65 cm 2 V −1 s −1 for the device with Cr and 394 cm 2 V −1 s −1 for the device with Co-contacts. By fitting our experimental data to the percolative phase transition theory, the temperature-dependent conductivity data show a transition from an insulating-to-metallic behavior at a bias of ∼28 V for Cr-contacts and ∼20 V for Co-contacts. This cross-over of the conductivity can be attributed to an increase in carrier density as a function of the gate bias in temperature-dependent transfer characteristics. By extracting the critical exponents, we find that the transport behavior in the device with Co-contacts aligns closely with the 2D percolation theory. In contrast, the devices with Cr-contacts deviate significantly from the 2D limit at low temperatures.

36 MATERIALS SCIENCE↗