Search NASA⌕ Search

SEARCH · Search NASA

Results for “IMPURITY”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

H2O Electrolysis with Impure Water Source - Final Report

This Phase III final report summarizes the Phase I research and development work performed during the IRAD FY 2018-Cycle 1, Stage C-Phase I project March 15, 2018 through August 17, 2018 and during the Phase II continuation request which funded the research and development November 26, 2018 through September 30, 2019. A Phase III proposal was accepted to continue the technology development, but due to the unavailability of the Principal Investigators to complete the proposed PhasE III work, the Phase III project was re-scoped to complete a final report on the research and development work that was previously completed as a wrap-up of this IRAD project

Electrolysis↗
DOE OSTI2024

Local Heat Transfer Measurements in Cooler for sCO2 Power Cycles with Dilute Nitrogen and Argon Impurities

An experimental investigation of heat transfer in CO2 and CO2/N2 and CO2/argon mixtures undergoing cooling near the pseudocritical temperature has been conducted. The conditions are representative of direct sCO2 cycle coolers. Three tubing test articles were tested: conventional drawn tubing, an additively manufactured tube with a square cross section, and an additively manufactured tube with a square cross section and ribs angled 60° relative to the flow direction. The axial heat transfer coefficient distribution was determined with local wall temperature measurements. This work concludes that dilute concentrations (< 2%) of nitrogen and argon have a negligible impact on heat transfer coefficient and on friction factor.

Searle, Matthew↗
DOE OSTI2025

Investigation of radiated-power for low aspect ratio fusion plasmas

Investigating radiated power in fusion plasmas is of utmost importance to understand the effect of undesired impurities, such as metals, in present devices, or also desired impurities, such as noble gasses, to purposefully radiate a large fraction of power in future devices. These studies are especially important for high Z impurities which will play a crucial role in future generation fusion pilot plants. In this work, we have developed a power radiation analysis module, which is used to investigate 2D distributions of impurity densities and radiated power asymmetries caused due to both plasma rotation and the cooling rate dependence on temperature profile for the cases of experimental NSTX plasmas and designed scenarios for the spherical tokamak advanced reactor (STAR), both being low aspect ratio tokamaks. Two different atomic databases have been tested during this work to study their impact on the radiated power distribution, especially for high Z impurities. Also in PRAM, self-consistent calculations of two-dimensional electron, main ion, and impurity ion densities are carried out using one-dimensional input density, temperature, and rotation profiles. In the case of NSTX, discharges with high rotation of ∼ 170 km s, measured with charge exchange recombination spectroscopy, have been investigated. Rotation-induced charge separation, leading to an electrostatic potential, is calculated iteratively to a self-consistent solution while testing high Z impurities to observe any 2D asymmetry in the core radiated power due to centrifugal forces. The STAR design, being much larger (R = 4 m), is projected to have a much lower rotation, and is shown to have low rotation-induced asymmetries, on the order of ten percent or less, between the low field and high field sides. However, another effect not due to rotation but to the dependence of impurity cooling rates on temperature can lead to radiation peaking off-axis, near the plasma edge. This effect is noticeable for argon in NSTX, for example, but can also be enhanced for certain impurities at much higher temperatures projected for STAR (T e0 ~ 32 keV), for example for undesired tungsten or possibly desired xenon.

NSTX↗
DOE OSTI2025

Characterization of W production during ICRF operations: experiments and modeling

For successfully heating plasma with waves in the ion cyclotron range of frequencies (ICRFs), mitigating impurity production is just as crucial as maximizing power coupling, especially in high-Z environments. ICRF can effectively deposit energy on ions, modify turbulence-driven transport, and enhance fusion reaction efficiency, but only when its power coupling has minimal impact on impurity production. To do so, one must rely on a toroidal array of at least three active elements excited with appropriate phasing and power ratio to reduce the currents induced on the antenna frame below levels critical for physical sputtering. In contrast to classic two-strap antennas, which are optimized for dipole phasing with equal power on both straps, three-strap antennas in ASDEX Upgrade (AUG)—but also four-strap antennas in JET, Alcator C-Mod, SPARC and ITER—offer the possibility to act also on the power ratio between the central and outer straps. With optimal settings, impurity production can be reduced substantially, making the ICRF compatible with the high-Z wall. This paper explores the characteristics of the AUG three-strap antennas in terms of impurity production, as well as the key role of plasma composition in this process. Numerical simulations were performed using SSWICH and Petra-M (finite element codes) to quantify impurity production and compare with experimental results. Energies of ions falling on antenna limiters (measured with probes) are well predicted by both codes. These tools are then used to further describe the source of the impurity, namely the gross erosion of tungsten from an ICRF antenna, for different plasma mixtures. Results are also compared to spectroscopy data. Ultimately, we show that deleterious effects of the ICRF on plasma surface interactions will be weaker in plasmas containing larger fractions of highly ionized heavier low-Z impurity, which is typically relevant for experiments relying on impurity seeding.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Multi-X-point radiation and its dynamics in up/down asymmetry in plasma detachment regimes in Wendelstein 7-X

In Wendelstein 7-X (W7-X), stable plasma detachment in ECRH hydrogen plasmas is routinely achieved with the standard magnetic configuration, containing five magnetic islands in the scrape-off layer (SOL). Plasma detachment induced by intrinsic carbon impurities is characterized by a high radiation fraction (ƒ rad ) with significantly reduced divertor heat load and particle flux. In this work, we present the radiation dynamics during the detached plasma (DP) phase, such as the shift of radiation zones in radial and poloidal directions towards the X-points as ƒ rad increases (∼0.6–0.9), as well as the penetration of the radiation layer into the confinement region in the deep DP phase with ƒ rad approaching unity. In particular, a structure of multi-X-point radiation (multi-XPR) with an up/down asymmetry in the DP phase is highlighted, which is revealed by bolometer tomography and is further confirmed by video diagnostics. The multi-XPR structure forms helical 3D bands aligned with W7-X field periodicity. Field reversal experiments show that the brightest XPR displaces between the upper and lower SOL regions, suggesting the E× B drift effects. This paper presents the multi-XPR structure observed in the W7-X plasma in detail for the first time. A simplified model considering the influence of the poloidal E× B drift ( V d ) on the impurity flow in the SOL shows that the downstream drift toward the target or target shadow region ( V d < 0) decreases the impurity content, while the upstream drift toward the LCFS ( V d > 0) increases the impurity content. On this basis, the poloidal drift potentially leads to an up/down asymmetry of impurity density in the SOL despite the symmetry magnetic topology. The dynamics of the up/down asymmetry in the multi-XPR structure is also related to the magnitude V d /D (normalized to the impurity diffusivity), with an additional effect owing to the radial inward shift of the emission zone. These results provide new insights into impurity-induced detachment dynamics and provide a basis for improving 3D modeling of impurity transport, which typically does not consider drifts.

E × B drift↗
DOE OSTI2025

Amorphization and siliconization of silicon carbide as a first wall material

The understanding and prediction of silicon carbide (SiC) material evolution exposed to SOL plasma conditions is of prime interest because SiC represents a promising main chamber wall plasma-facing material for next-step fusion devices (low hydrogenic diffusion, good mechanical and thermal properties under neutron irradiation). Gross and net Si erosion rates from SiC surfaces in contact with a well-diagnosed L-mode plasma in the DIII-D tokamak have been simulated and the surface concentrations of impurities have been tracked as a function of time. Coupled simulation of surface model and impurity transport demonstrates amorphization of crystalline SiC exposed to L-mode plasma due to the accumulation of displacement damages under ion irradiation. This affects the lifetime of SiC plasma facing components. Surface evolution is tightly coupled to impurity transport in the plasma and therefore needs to be integrated with impurity transport simulations to effectively predict Si erosion rates and sub-surface concentrations as a function of time. The simulation workflow couples a semi-analytical surface model to the impurity transport code GITR. The surface model is a homogeneous mixed-material model that tracks physical & chemical sputtering and reflection of impurities. Gross erosion is primarily influenced by the background plasma parameters and redeposition patterns are mainly influenced by the prompt redeposition due to the gyro-orbits of impurity ions. Although crystalline form of SiC is preferable for fusion wall applications because of resistance to neutron irradiation, this work indicates that crystalline SiC will undergo amorphization under D plasma contact with implications of higher sputtering and fuel retention. These results direct us to explore the effects of amorphization on crystalline SiC and further the physics basis of SiC usage as first wall material for fusion environments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2004

Solutal Convection Around Growing Protein Crystal and Diffusional Purification in Space

At least some protein crystals were found to preferentially trap microheterogeneous impurities. The latter are, for example, dimmer molecules of the crystallizing proteines (e.g. ferritin, lysozyme), or the regular molecules on which surfaces small molecules or ions are adsorbed (e.g. acetilated lysozyme) and modi@ molecular charge. Impurities may induce lattice defects and deteriorate structural resolution. Distribution of impurities between mother solution and gorwing crystal is defined by two interrelated distribution coefficients: kappa = rho(sup c, sub 2) and K = (rho(sup c, sub 2)/rho(sup c, sub 1)/rho(sub 2)/rho(sub 1). Here, rho(sub 2), rho(sub 1) and rho(sup c, sub 2) are densities of impurity (2) and regular protein (1) in solution at the growing interface and within the crystal ("c"). For the microheterogeneous impurities studied, K approx. = 2 - 4, so that kappa approx. - 10(exp 2) - 10(exp 3), since K = kappa (rho(sub 1)/rho(sup c, sub 1) and protein solubility ratio rho(sub 1)/rho(sub=p c, sub 2) much less than 1. Therefore, a crystal growing in absence of convection purifies mother solution around itself, grows cleaner and, probably, more perfect. If convection is present, the solution flow permanently brings new impurities to the crystal. This work theoretically addressed two subjects: 1) onset of convection, 2) distribution of impurities.

Lee, Chun P.↗
DOE OSTI2025

Integrated modeling of RF-induced tungsten erosion at ICRH antenna structures in the WEST tokamak *

This paper introduces STRIPE (Simulated Transport of RF Impurity Production and Emission), an advanced modeling framework developed to analyze material erosion and the global transport of eroded impurities originating from radio-frequency (RF) antenna structures in magnetic confinement fusion devices. STRIPE integrates multiple physics modules: SolEdge3x for scrape-off-layer plasma profiles, COMSOL for 3D RF rectified sheath potentials, RustBCA for erosion yields and surface interactions, and global impurity transport for 3D ion energy-angle distributions and impurity transport. The framework is applied to an ion cyclotron RF-heated L-mode discharge (#57877) in the WEST tokamak, where it predicts a thirty-fold increase in gross tungsten erosion at antenna limiters during the transition from ohmic to ICRH operation. Additionally, under ICRH conditions, a tenfold enhancement in erosion is observed when comparing RF sheath effects to purely thermal sheath conditions. High-charge-state oxygen ions ($\mathrm{O}$ 6+ and above) are identified as the dominant contributors to tungsten sputtering. To validate the model, a synthetic diagnostic tool based on inverse photon efficiency (S/XB coefficients) from the ColRadPy collisional-radiative model enables direct comparison with spectroscopic measurements. Model predictions using a plasma composition of 1% oxygen and 99% deuterium show good agreement with observed W − I (400.9 nm) emission for discharge #57877, supporting the accuracy of the STRIPE framework. This study focuses specifically on gross erosion calculations to demonstrate STRIPE’s capabilities. Future extensions of this work will incorporate net erosion, re-deposition, self-sputtering effects, and whole-device modeling of sputtered tungsten impurity transport. STRIPE is also being applied to other RF-heated linear and toroidal devices, offering valuable insights for antenna design, impurity control, and performance optimization in next-generation fusion reactors.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1982

Electromigration process for the purification of molten silicon during crystal growth

A process for the purification of molten materials during crystal growth by electromigration of impurities to localized dirty zones. In the Czochralski crystal growing process, the impurities are electromigrated away from the crystallization interface by applying a direct electrical current to the molten silicon for electromigrating the charged impurities away from the crystal growth interface. The edge-defined film-fed crystal growth process, a direct electrical current is applied between the two faces which are used in forming the molten silicon into a ribbon. The impurities, migrated to one side only of the crystal ribbon, may be removed or left in place. If left in place, they will not adversely affect the ribbon when used in solar collectors. The migration of the impurity to one side only of the silicon ribbon is especially suitable for use with asymmetric dies which preferentially crystallize uncharged impurities along one side or face of the ribbon.

Shlichta, P. J.↗
NASA NTRS1986

Presence, segregation and reactivity of H, C and N dissolved in some refractory oxides

The sources of impurities, particularly carbon, in high melting oxides and silicates are discussed, along with detection and quantification methods. The impurities are important for their effects on bulk material properties through the media of, e.g., surface or grain boundary characteristics. The impurities are usually encountered by the contact of the oxide (refractory) material with volatiles such as H2O and CO2, which become incorporated in the material and form anion complexes with oxygen acting as a covalent bonded ligand. The specific processes undergone by MgO in assimilating C impurities are delineated, using data obtained with X-ray photoelectron spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry and nuclear reaction profiling. Finally, maintenance of a supersaturated solid solution with C impurities by space charge control is described as a means of offset impurity effects.

Freund, F.↗
NASA NTRS1989

Alternating gradient photodetector

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Overhauser, Albert W.↗
NASA NTRS1998

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗
NASA NTRS2003

Studies of Atomic Free Radicals Stored in a Cryogenic Environment

Impurity-Helium Solids are porous gel-like solids consisting of impurity atoms and molecules surrounded by thin layers of solid helium. They provide an ideal medium for matrix isolation of free radicals to prevent recombination and store chemical energy. In this work electron spin resonance, nuclear magnetic resonance, X-ray diffraction, and ultrasound techniques have all been employed to study the properties of these substances. Detailed studies via electron spin resonance of exchange tunneling chemical reactions involving hydrogen and deuterium molecular and atomic impurities in these solids have been performed and compared with theory. Concentrations of hydrogen approaching the quantum solid criterion have been produced. Structured studies involving X ray diffraction, ultrasound, and electron spin resonance have shown that the impurities in impurity helium solids are predominantly contained in impurity clusters, with each cluster being surrounded by thin layers of solid helium.

Lee, David M.↗