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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Optimized Wavelength-Tuned Nonlinear Frequency Conversion Using a Liquid Crystal Clad Waveguide

An optimized wavelength-tuned nonlinear frequency conversion process using a liquid crystal clad waveguide. The process includes implanting ions on a top surface of a lithium niobate crystal to form an ion implanted lithium niobate layer. The process also includes utilizing a tunable refractive index of a liquid crystal to rapidly change an effective index of the lithium niobate crystal.

Stephen, Mark A.↗
DOE OSTI2019

Formation of Nanosized Surface Layers of 03Kh17N12M2 Stainless Steel by Implantation of N{sup +} Ions

Accumulation of nitrogen in nanosized surface layers of 03Kh17N12M2 stainless steel has been detected upon N{sup +} ion implantation up to 14 at % together with metal nitrides, mainly of chromium nitride CrN and interstitial solid solution. It has been demonstrated that N{sup +} ion implantation accompanied by preliminary irradiation by Ar{sup +} and O{sup +} ions decreases maximum nitrogen concentration by at least two times. It is assumed that this is stipulated by segregation to surface layers of iron atoms upon irradiation by Ar{sup +} ions as well as formation of chromium oxide Cr{sub 2}O{sub 3} and chromium hydroxide CrOOH upon irradiation by O{sup +} ions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

On the electrical conductivity of Ti-implanted alumina

Ion implantation of metal species into insulators provides a tool for the formation of thin, electrically conducting, surface layers with experimenter-controlled resistivity. High energy implantation of Pt and Ti into alumina accelerator components has been successfully employed to control high voltage surface breakdown in a number of cases. In the work described here we have carried out some basic investigations related to the origin of this phenomenon. By comparison of the results of alumina implanted with Ti at 75 keV with the results of prior investigations of polymers implanted with Pt at 49 eV and Au at 67 eV, we describe a physical model of the effect based on percolation theory and estimate the percolation parameters for the Ti-alumina composite. We estimate that the percolation dose threshold is about 4 x 10{sup 16} cm{sup -2} and the maximum dose for which the system remains an insulator-conductor composite is about 10 x 10{sup 16} cm{sup -2}. The saturation electrical conductivity is estimated to be about 50 S/m. We conclude that the observed electrical conductivity properties of Ti-implanted alumina can be satisfactorily described by percolation theory.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Zn precipitation and Li depletion in Zn implanted ZnO

Ion implantation of Zn substituting elements in ZnO has been shown to result in a dramatic Li depletion of several microns in hydrothermally grown ZnO. This has been ascribed to a burst of mobile Zn interstials. In this study, we seek to understand the reason behind this interstitial mediated transient enhanced diffusion in Li-containing ZnO samples after Zn implantation. ZnO wafers were implanted with Zn to two doses, 5 × 10{sup 15} cm{sup −2} and 1 × 10{sup 17} cm{sup −2}. Secondary ion mass spectrometry was carried out to profile the Li depletion depth for different annealing temperatures between 600 and 800 °C. The 800 °C annealing had the most significant Li depletion of close to 60 μm. Transmission electron microscopy (TEM) was carried out in selected samples to identify the reason behind the Li depletion. In particular, TEM investigations of samples annealed at 750 °C show significant Zn precipitation just below the depth of the projected range of the implanted ions. We propose that the Zn precipitation is indicative of Zn supersaturation. Both the Li depletion and Zn precipitation are competing synchronous processes aimed at reducing the excess Zn interstitials.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Hybrid quantum circuit with implanted erbium ions

We report on hybrid circuit quantum electrodynamics experiments with focused ion beam implanted Er{sup 3+} ions in Y{sub 2}SiO{sub 5} coupled to an array of superconducting lumped element microwave resonators. The Y{sub 2}SiO{sub 5} crystal is divided into several areas with distinct erbium doping concentrations, each coupled to a separate resonator. The coupling strength is varied from 5 MHz to 18.7 MHz, while the linewidth ranges between 50 MHz and 130 MHz. We confirm the paramagnetic properties of the implanted spin ensemble by evaluating the temperature dependence of the coupling. The efficiency of the implantation process is analyzed and the results are compared to a bulk doped Er:Y{sub 2}SiO{sub 5} sample. We demonstrate the integration of these engineered erbium spin ensembles with superconducting circuits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

The dual advanced ion simultaneous implantation experiment (DAISIE) for testing plasma-facing materials

A novel dual ion beam experimental facility, the Dual Advanced Ion Simultaneous Implantation Experiment (DAISIE), has been constructed at the University of Wisconsin-Madison Inertial Electrostatic Confinement laboratory for implanting candidate plasma-facing components of multiple ion species. DAISIE is capable of implanting ions at energies from 10 kV to 50 kV, ion currents of 10 µA–950 µA, corresponding to steady-state ion fluxes of 1 × 10 14 cm –2 s –1 to 1 × 10 16 cm –2 s –1 , incidence angles of 55°, and surface temperatures of at least 1100 °C. Improvements to the sample current and sample temperature measurement and control systems over those used in prior UW-IEC experiments have been made. Likewise, optical measurements of the spot size of the beam on samples in DAISIE are in agreement with existing measurements of the ion beam and spot size in previous UW-IEC experiments. Dual-beam operation has been validated with helium-deuterium ion implantations in tungsten surfaces.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2011

Modeling of nanocluster formation by ion beam implantation

A theoretical model was developed to investigate the mechanism of the formation of nanoclusters via ion beam implantation. The evolution of nanoclusters, including the nucleation and growth process known as Ostwald ripening, was rebuilt using numerical simulations. The effects of implantation parameters such as the ion energy, ion fluence, and temperature on the morphology of implanted microstructures were also studied through integration with the Monte Carlo Transport of Ions in Matter code calculation for the distribution profiles of implanted ions. With an appropriate ion fluence, a labyrinth-like nanostructure with broad size distributions of nanoclusters formed along the ion implantation range. In a latter stage, a buried layer of implanted impurity developed. With decreasing ion energy, the model predicted the formation of precipitates on the surface. These simulation results were fully consistent with many experimental observations. With increased temperature, the characteristic length and size of nanostructures would increase due to the high mobility. This theoretical model provides an efficient numerical approach for fully understanding the mechanism of the formation of nanoclusters, allowing for the design of ion beam experiments to form specific nanostructures through ion-implantation technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Novel Source Development for Focused Ion Beam Implantation and Irradiation [Slides]

We have demonstrated focused ion implantation for fabrication of single atom devices and nanofabrication. This is a viable solution for prototyping - fast and easy! There is on-going work in diamond, SiN, SiC, hBN, GaN, AlGan, etc. A new liquid metal alloy ion source development is on-going. There is a pathway towards deterministic defect centers in wide bandgap materials using FIB implantation.

43 PARTICLE ACCELERATORS↗
DOE OSTI2015

Improve the corrosion and cytotoxic behavior of NiTi implants with use of the ion beam technologies

The corrosion resistance behavior and cytotoxicity of binary NiTi-base alloy specimens subjected to surface modification by silicon ion beams and the proliferative ability of mesenchymal stem cells (MSC) of rat marrow on an ion-implanted surface of the alloy have been studied. The silicon ion beam processing of specimen surfaces is shown to bring about a nearly two-fold improvement in the corrosion resistance of the material to attack by acqueous solutions of NaCl and human plasma and a drastic decrease in the nickel concentration after immersion of the specimens into the solutions for ∼3400 and ∼6000 h, respectively. It is found that MSC proliferation strongly depends on the surface structure, roughness and chemical condition of NiTi implants.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Invited Review Article: The electrostatic plasma lens

The fundamental principles, experimental results, and potential applications of the electrostatic plasma lens for focusing and manipulating high-current, energetic, heavy ion beams are reviewed. First described almost 50 years ago, this optical beam device provides space charge neutralization of the ion beam within the lens volume, and thus provides an effective and unique tool for focusing high current beams where a high degree of neutralization is essential to prevent beam blow-up. Short and long lenses have been explored, and a lens in which the magnetic field is provided by rare-earth permanent magnets has been demonstrated. Applications include the use of this kind of optical tool for laboratory ion beam manipulation, high dose ion implantation, heavy ion accelerator injection, in heavy ion fusion, and other high technology.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Antimicrobial activity of tantalum oxide coatings decorated with Ag nanoparticles

Silver plasma immersion ion implantation was used to decorate silver nanoparticles (Ag NPs) on tantalum oxide (TO) coatings. The coatings acted against bacterial cells (Staphylococcus epidermidis) in the dark by disrupting their integrity. The action was independent of silver release and likely driven by the electron storage capability of the Schottky barriers established at the interfaces between Ag NPs and the TO support. Moreover, no apparent side effect on the adhesion and differentiation of rat bone mesenchymal stem cells was detected when using Ag NPs-modified TO coatings. These results demonstrate that decoration of tantalum oxide using Ag NPs could be a promising procedure for improving the antibacterial properties for orthopedic and dental implants.

36 MATERIALS SCIENCE↗
NASA NTRS1997

Annealing Effects on the Surface Plasmon of MgO Implanted with Gold

Gold ion implantation was carried out with the energy of 1.1 MeV into (100) oriented MgO single crystal. Implanted doses are 1, 3, 6, 10 x 10(exp 16) ions/sq cm. The gold irradiation results in the formation of gold ion implanted layer with a thickness of 0.2 microns and defect formation. In order to form gold colloids from the as-implanted samples, we annealed the gold implanted MgO samples in three kinds of atmospheres: (1)Ar only, (2)H2 and Ar, and (3)O2 and Ar. The annealing over 1200 C enhanced the gold colloid formation which shows surface plasmon resonance band of gold. The surface plasmon bands of samples annealed in three kinds of atmospheres were found to be at 535 nm (Ar only), 524 nm(H2+Ar), and 560 nm (02+Ar), The band positions of surface plasmon can be reversibly changed by an additional annealing.

Ueda, A.↗
DOE OSTI2015

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Controlled synthesis of buried delta-layers of Ag nanocrystals for near-field plasmonic effects on free surfaces

We report on the shallow synthesis by low energy ion implantation of delta-layers of Ag nanocrystals in SiO{sub 2} at few nanometers under its free surface. Transmission electron microscopy observations, ballistic simulations, and reflectance measurements are coupled to define the conditions for which the synthesis is fully controlled and when, on the contrary, this control is lost. We show that low dose implantation leads to the formation of a well-defined single plane of nanocrystals, while for larger doses, sputtering and diffusion effects limit the control of the size, position, and volume amount of these nanocrystals. This paper provides the experimental evidence of the incorporated dose saturation predicted in the literature when implanting metal ions at high doses in glass matrices. Its consequences on the particle population and the plasmonic optical response of the composite layers are carefully analyzed. We show here that this saturation phenomenon is underestimated in standard simulation predictions due to diffusion of metal atoms towards the surface and nanocrystal nucleation during the implantation process.

36 MATERIALS SCIENCE↗
NASA NTRS1978

Development of pulsed processes for the manufacture of solar cells

The results of a 1-year program to develop the processes required for low-energy ion implantation for the automated production of silicon solar cells are described. The program included: (1) demonstrating state-of-the-art ion implantation equipment and designing an automated ion implanter, (2) making efforts to improve the performance of ion-implanted solar cells to 16.5 percent AM1, (3) developing a model of the pulse annealing process used in solar cell production, and (4) preparing an economic analysis of the process costs of ion implantation.

Minnucci, J. A.↗