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Integrated configuration for "differential" sequential processor is less susceptible to noise than one using discrete components. Accuracy of version is unaffected by sample-and-hold (S/H) acquisition speed, S/H droop rate, and stray pickup by separate card-mounted parts.
This article experimentally investigates the inception of an innovative hard X-ray photon energy attenuation layer (PAL) to advance high-energy X-ray detection (20–50 keV). A bi-layer design with a thin film high-Z PAL on the top and Si image sensor on the bottom has previously demon-strated quantum yield enhancement via computational methods by the principle of photon energy down conversion (PEDC), where high-energy X-ray photon energies are attenuated via inelastic scattering down to ≤10 keV, which is suitable for efficient photoelectric absorption by Si. Quantum yield enhancement has been experimentally confirmed via a preliminary demonstration using PAL-integrated Si-based CMOS image sensors (Si CIS). Furthermore, substituting the high-Z PAL with a lower-Z material—Sn—and alternatively coupling it with a conventional scintillator ma-terial—Lutetium-yttrium oxyorthosilicate (LYSO)—have been compared to demonstrate the most prominent efficacy of monolithic integration of high-Z PAL on Si CIS to detect hard X-rays, paving the way for next-generation high-energy X-ray detection methods.
This presentation details the development of an additively manufactured (AM) subscale test article for the secondary sealed container (SSC) as part of the NASA FROSTE project. FROSTE is focused on the collection of regolith samples from shadowed regions of the Moon and the preservation of those samples at cryogenic temperatures for return to Earth. Our team was integrated into the FROSTE program to leverage innovative design approaches and additive manufacturing capabilities in support of a scalable development strategy, where the subscale configuration serves as the development path toward a full-scale SSC. Scalmalloy was selected as the primary material for all AM components due to its favorable strength-to-weight ratio, thermal conductivity, and demonstrated performance in aerospace applications. Its aluminum-based composition supports robust mechanical behavior at cryogenic temperatures while enabling efficient heat transfer and control of thermal gradients within the containment system. The SSC architecture consists of an outer container assembly that houses a phase change material (PCM) tank, which in turn contains primary containers holding the regolith. Thermal management relies on controlled conductive and radiative heat transfer, including a thermal connection assembly that interfaces the PCM tank to an external cryocooler via a thermal strap, and IMLI surrounding the PCM tank to inhibit radiative heat transfer. The outer container assembly incorporates sealing interfaces, thermal connection ports, and I/O feedthroughs, with PTFE spring seals used at critical interfaces to maintain containment integrity. The PCM tank is manufactured as a single monolithic Scalmalloy component and incorporates an integral lattice structure to minimize thermal gradients, internal channels for thermocouple routing, and interface features for thermal connection assembly integration. The tank is centrally suspended within the outer container using support rings, with G10 insulating components employed to inhibit thermal leaks. This work describes the design methodology, AM approach, and key considerations used to inform the design.
We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.
An integrated corner-reflector antennas has been designed, fabricated, and measured at millimeter-wave frequencies. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane, and suspended in a longitudinal cavity etched in a silicon wafer. A novel traveling wave antenna design, the modified-bend antenna, with an antenna length of 1.2 lambda and spacing 0.96 lambda from the apex, results in a wideband input impedance centered at 140 Ohm and low cross-polarization levels. Measurements at 180-270 GHz show a well-defined pattern with low sidelobe levels, and a main-beam efficiency of 93 percent and 83 percent at 180 and 222 GHz, respectively. The monolithic approach allows the integration of a matching network and a Schottky-diode or SIS detector at the base of the antenna to yield a low-noise monolithic millimeter-wave receiver.
In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.
In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars
Partitioned methods allow one to build a simulation capability for coupled problems by reusing existing single-component codes. In so doing, partitioned methods can shorten code development and validation times for multiphysics and multiscale applications. In this work, we consider a scenario in which one or more of the “codes” being coupled are projection-based reduced order models (ROMs), introduced to lower the computational cost associated with a particular component. We simulate this scenario by considering a model interface problem that is discretized independently on two non-overlapping subdomains. Here we then formulate a partitioned scheme for this problem that allows the coupling between a ROM “code” for one of the subdomains with a finite element model (FEM) or ROM “code” for the other subdomain. The ROM “codes” are constructed by performing proper orthogonal decomposition (POD) on a snapshot ensemble to obtain a low-dimensional reduced order basis, followed by a Galerkin projection onto this basis. The ROM and/or FEM “codes” on each subdomain are then coupled using a Lagrange multiplier representing the interface flux. To partition the resulting monolithic problem, we first eliminate the flux through a dual Schur complement. Application of an explicit time integration scheme to the transformed monolithic problem decouples the subdomain equations, allowing their independent solution for the next time step. We show numerical results that demonstrate the proposed method’s efficacy in achieving both ROM-FEM and ROM-ROM coupling.
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
The Jet Propulsion Laboratory (JPL) and Ames Research Center (ARC) are partnering in the CubeSat Hydrometric Atmospheric Radiometer Mission (CHARM), a water vapor radiometer integrated on a 3U CubeSat platform, selected for implementation under NASA Hands-On Project Experience (HOPE-3). CHARM will measure 4 channels at 183 GHz water vapor line, subsets of measurements currently performed by larger and more costly spacecraft (e.g. ATMS, AMSU-B and SSMI/S). While flying a payload that supports SMD science objectives, CHARM provides a hands-on opportunity to develop technical, leadership, and project skills. CHARM will furthermore advance the technology readiness level (TRL) of the 183 GHz receiver subsystem from TRL 4 to TRL 6 and the CubeSat 183 GHz radiometer system from TRL 4 to TRL 7.
It has emerged as a potential candidate to improve the performance of monolithic-three-dimensional (M3D) integration of fused logic and memories through low-temperature in situ synthesis of high-performance metal–oxide–semiconductor (MOS) transistors. Here, we report the demonstration of the BEOL-compatible low thermal budget (350 °C) fabrication process of ultrathin-TiO2 transistors by the combination of RTA and UV-ozone treatment (RTA-UVOz). UV–ozone (UVOz) treatment of TiO2 anatase films significantly enhances stability, boosting ION current and field effect mobility (μ FE ) by two times of magnitude in TiO2 TFTs. UV ozone treatment helps to eliminate pre-existing oxygen vacancies and carbon contamination on TiO2 channels even at low temperature (100 °C), resulting in high-quality channel/dielectric interfaces with low interface states (D it ). During UVOz treatment, oxygen species (O x ) passivate the oxygen vacancies ($V$$^{2+}_{o}$), and hence low concentration of $V$$^{2+}_{o}$ would be left for ionization/de-ionization under PBS/NBS, leading to improved bias stress stability. Furthermore, the TiO 2 TFTs with thin ZrO 2 gate dielectric exhibited excellent performance including a lower subthreshold swing (SS) of 98 mV/dec with high drive I ON current ∼ 4.5 μA/μm, a high I ON /I OFF > 10 9 , and mobility μFE of 7 cm 2 /V-s under a battery powered voltage of 1 V. UV–ozone treatment enables high-performance, CMOS-compatible TiO 2 transistors with a low thermal budget, ideal for next-generation flexible, energy-efficient electronics.
Abstract Optical metasurfaces are planar nanostructured devices that are industrially attractive in part because they utilize high-throughput microelectronic fabrication techniques for implementation. It is therefore critical to develop design paradigms that can balance the realization of highly efficient wavefront responses together with device manufacturability. We introduce a gradient-based design framework for freeform metasurfaces in which nanoscale elements are explicitly constrained to feature basic shapes, nearly uniform feature sizes, and exceptionally low aspect ratios. In spite of the apparent uniformity of the metasurface geometric features, the devices are able to utilize nonlocal near-field optical coupling to achieve highly efficient and extreme wavefront scattering beyond conventional design methodologies. Utilizing this approach, we design facile high-numerical-aperture devices such as beam deflectors and large-area metalenses capable of diffraction-limited focusing. We anticipate that these concepts can facilitate the design and integration of metasurfaces into monolithic optical systems.
A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
Millimeter wave systems, phased array antennas, and high performance components all require wideband circulators (and isolators) to perform diplexing and switching, to improve isolation and Voltage Standing Wave Ratio (VSWR), and to construct IMPATT diode reflection amplifiers. Presently, most of the millimeter-wave circulators and isolators are available in the configurations of waveguide or stripline, both of which suffer from the shortcomings of bulky size/weight, narrow bandwidth, and poor compatibility with monolithic millimeter-wave integrated circuits (MMIC). MMW microstrip circulators/isolators can eliminate or improve these shortcomings. Stub-tuned microstrip circulator configuration were developed utilizing the electromagnetic fields perturbation technique, the adhesion problems of microstrip metallization on new ferrite substrate were overcome, the fabrication, assembly, packaging techniques were improved, and then successfully designed, fabricated a Ka band circulator which has isolation and return loss of greater than 16dB, insertion loss less than 0.7dB. To assess the steady and reliable performance of the circulator, a temperature cycling test was done over the range of -20 to +50 C for 3 continuous cycles and found no significant impact or variation of circulator performance.
A program to develop a monolithic W-band low noise amplifier (a critical element in any W-band communications, sensors, or radar application) is described. Goals of the program include a completely monolithic low noise amplifier, less than a 3.5 dB noise figure, and a monolithic mixer suitable for integration with the LNA.
A 50-MESFET grid amplifier is reported that has a gain of 11 dB at 3.3 GHz. The grid isolates the input from the output by using vertical polarization for the input beam and horizontal polarization for the transmitted output beam. The grid unit cell is a two-MESFET differential amplifier. A simple calibration procedure allows the gain to be calculated from a relative power measurement. This grid is a hybrid circuit, but the structure is suitable for fabrication as a monolithic wafer-scale integrated circuit, particularly at millimeter wavelengths.
A 1.5-W solid-state power amplifier (SSPA) has been demonstrated as part of an effort to develop and evaluate state-of-the-art transmitter and receiver components at 32 and 35 GHz for future deep space missions. Output power and efficiency measurements for a monolithic millimeter-wave integrated circuit (MMIC)-based SSPA are reported. Technical design details for the various modules and a thermal analysis are discussed, as well as future plans.
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.1-micrometer gate-length InAlAs/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an f(sub max) above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz. A number of state-of-the-art InP HEMT MMICs will be presented. These include voltage-controlled and fixed-tuned oscillators, power amplifiers, and an active doubler. We will first discuss an 80 GHz voltage-controlled oscillator with 5 GHz of tunability and at least 17 mW of output power, as well as a 120 GHz oscillator providing 7 mW of output power. In addition, we will present results of a power amplifier which covers the full WRIO waveguide band (75-110 GHz), and provides 40-50 mW of output power. Furthermore, we will present an active doubler at 164 GHz providing 8% bandwidth, 3 mW of output power, and an unprecedented 2 dB of conversion loss for an InP HEMT MMIC at this frequency. Finally, we will demonstrate a power amplifier to cover 140-170 GHz with 15-25 mW of output power and 8 dB gain. These components can form a power source in the 155-165 GHz range by cascading the 80 GHz oscillator, W-band power amplifier, 164 GHz active doubler and final 140-170 GHz power amplifier for a stable, compact local oscillator subsystem, which could be used for atmospheric science or astrophysics radiometers.