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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructures

Abstract Resistive switching devices have been regarded as a promising candidate of multi-bit memristors for synaptic applications. The key functionality of the memristors is to realize multiple non-volatile conductance states with high precision. However, the variation of device conductance inevitably causes the state-overlap issue, limiting the number of available states. The insufficient number of states and the resultant inaccurate weight quantization are bottlenecks in developing practical memristors. Herein, we demonstrate a resistive switching device based on Pt/LaAlO 3 /SrTiO 3 (Pt/LAO/STO) heterostructures, which is suitable for multi-level memristive applications. By redistributing the surface oxygen vacancies, we precisely control the tunneling of two-dimensional electron gas (2DEG) through the ultrathin LAO barrier, achieving multiple and tunable conductance states (over 27) in a non-volatile way. To further improve the multi-level switching performance, we propose a variance-aware weight quantization (VAQ) method. Our simulation studies verify that the VAQ effectively reduces the state-overlap issue of the resistive switching device. We also find that the VAQ states can better represent the normal-like data distribution and, thus, significantly improve the computing accuracy of the device. Our results provide valuable insight into developing high-precision multi-bit memristors based on complex oxide heterostructures for neuromorphic applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Electron beam surface remelting enhanced corrosion resistance of additively manufactured Ti-6Al-4V as a potential in-situ re-finishing technique

This study explores the effect of surface re-finishing on the corrosion behavior of electron beam manufactured (EBM) Ti-G5 (Ti-6Al-4V), including the novel application of an electron beam surface remelting (EBSR) technique. Specifically, the relationship between material surface roughness and corrosion resistance was examined. Surface roughness was tested in the as-printed (AP), mechanically polished (MP), and EBSR states and compared to wrought (WR) counterparts. Electrochemical measurements were performed in chloride-containing media. It was observed that surface roughness, rather than differences in the underlying microstructure, played a more significant role in the general corrosion resistance in the environment explored here. While both MP and EBSR methods reduced surface roughness and enhanced corrosion resistance, mechanical polishing has many known limitations. The EBSR process explored herein demonstrated positive preliminary results. The surface roughness (R a ) of the EBM-AP material was considerably reduced by 82%. Additionally, the measured corrosion current density in 0.6 M NaCl for the EBSR sample is 0.05 µA cm –2 , five times less than the value obtained for the EBM-AP specimen (0.26 µA cm –2 ).

42 ENGINEERING↗
DOE OSTI2025

Mobility and threshold voltage extraction in transistors with gate-voltage-dependent contact resistance

The mobility of emerging (e.g., two-dimensional, oxide, organic) semiconductors is commonly estimated from transistor current-voltage measurements. However, such devices often experience contact gating, i.e., electric fields from the gate modulate the contact resistance during measurements, which can lead conventional extraction techniques to estimate mobility incorrectly even by a factor >2. Although this error can be minimized by measuring transistors at high gate-source bias |V gs |, this regime is often inaccessible in emerging devices that suffer from high contact resistance or early gate dielectric breakdown. Here, we propose a method of extracting mobility in transistors with gate-dependent contact resistance that does not require operation at high |V gs |, enabling accurate mobility extraction even in emerging transistors with strong contact gating. Our approach relies on updating the transfer length method (TLM) and can achieve <10% error even in regimes where conventional techniques overestimate mobility by >2×

36 MATERIALS SCIENCE↗
DOE OSTI2022

Structure-guided functional studies of plasmid-encoded dihydrofolate reductases reveal a common mechanism of trimethoprim resistance in Gram-negative pathogens

Two plasmid-encoded dihydrofolate reductase (DHFR) isoforms, DfrA1 and DfrA5, that give rise to high levels of resistance in Gram-negative bacteria were structurally and biochemically characterized to reveal the mechanism of TMP resistance and to support phylogenic groupings for drug development against antibiotic resistant pathogens. Preliminary screening of novel antifolates revealed related chemotypes that showed high levels of inhibitory potency against Escherichia coli chromosomal DHFR (EcDHFR), DfrA1, and DfrA5. Kinetics and biophysical analysis, coupled with crystal structures of trimethoprim bound to EcDHFR, DfrA1 and DfrA5, and two propargyl-linked antifolates (PLA) complexed with EcDHFR, DfrA1 and DfrA5, were determined to define structural features of the substrate binding pocket and guide synthesis of pan-DHFR inhibitors.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Resistance drift in Ge 2 Sb 2 Te 5 phase change memory line cells at low temperatures and its response to photoexcitation

Resistance drift in amorphous Ge 2 Sb 2 Te 5 is experimentally characterized in melt-quenched line cells in the range of 300 K to 125 K and is observed to follow the previously reported power-law behavior with drift coefficients in the range of 0.07 to 0.11 in the dark, linearly decreasing with 1/kT. While these drift coefficients measured in the dark are similar to commonly observed drift coefficients (~0.1) at and above room temperature, measurements under light show a significantly lower drift coefficient (0.05 under illumination vs 0.09 in the dark at 150 K). Periodic on/off switching of light shows a sudden decrease/increase in resistance, attributed to photo-excited carriers, followed by a very slow response (~30 min at 150 K) attributed to contribution of electron traps and slow trap-to-trap charge exchanges. A device-level electronic model is used to relate these experimental findings to gradual charging of electron traps in amorphous Ge 2 Sb 2 Te 5 , which gives rise to growth of a potential barrier for holes in time and, hence, resistance drift.

42 ENGINEERING↗
DOE OSTI2020

The electric pulses induced multi-resistance states in the hysteresis temperature range of 1 T 2 and 1 T -TaS 1.6 Se 0.4

The electric pulse-induced responses of 1T-TaS 2 and 1T-TaS 1.6 Se 0.4 crystals in the commensurate charge-density-wave (CCDW) phase in the hysteresis temperature range have been investigated. We observed that abrupt multi-steps of the resistance are excited by electric pulses at a fixed temperature forming multi-metastable like states. Here, we propose that the response of the system corresponds to the rearrangements of the textures of CCDW domains and the multi-resistance states or the nonvolatile resistance properties excited simply by electric pulses have profound significance for the exploration of solid-state devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Structure and overstability of resistive modes with runaway electrons

In this paper, we investigate the effects of runaway electron current on the dispersion relation of resistive magnetohydrodynamic modes in tokamaks. We present a new theoretical model to derive the dispersion relation, which is based on the asymptotic analysis of the resistive layer structure of the modes. It is found that in addition to the conventional resistive layer, a new runaway current layer can emerge whose properties depend on the ratio of the Alfvén velocity to the runaway electron convection speed. Due to the contribution from this layer, both the tearing mode and kink mode will have a real frequency in addition to a growth rate. The derived dispersion relation has been compared with numerical results using both a simplified eigenvalue calculation and a M3D-C 1 linear simulation, and good agreement is found in both cases.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Modeling of resistive plasma response in toroidal geometry using an asymptotic matching approach

The method of solving the linear resistive plasma response, based on the asymptotic matching approach, is developed for full toroidal tokamaks by upgrading the resistive DCON code [A. H. Glasser, Z. R. Wang, and J.-K. Park, Phys. Plasmas 23, 112506 (2016)]. The derived matching matrix, asymptotically matching the outer and inner regions, indicates that the applied three dimension (3-D) magnetic perturbations contribute additional small solutions at each resonant surface due to the toroidal coupling of poloidal modes. In contrast, the resonant harmonic only affects the corresponding resonant surface in the cylindrical plasma. Additionally, the solution of the ideal outer region is critical to the asymptotic matching and is challenging in toroidal geometry due to the singular power series solution at the resonant surfaces. Thus, a systematic verification of the outer region Δ' matrix is made by reproducing the well-known analytical Δ' result in Furth et al. [Phys. Fluids 16, 1054–1063 (1073)] and by making a quantitative benchmark with the PEST3 code [A. Pletzer and R. L. Dewar, J. Plasma Phys. 45, 427–451 (1991)]. Finally, the reconstructed numerical solution of the resistive plasma response from the toroidal matching matrix is presented. Compared with the ideal plasma response, the global structure of the response can be affected by the small finite island at the resonant surfaces.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Resistive contributions to the stability of DIII-D ITER baseline demonstration discharges

Here, measurements of the plasma response to applied n = 1 perturbations from DIII-D ITER baseline scenario (IBS) demonstration discharges exhibit increasing amplitude prior to disruption inducing mode locking events. Simulations reveal that changes in ideal and resistive stability impact the response in the DIII-D IBS regime, well below the pressure limit of the external kink mode. The dependencies of the response measurements on the plasma normalized internal inductance ℓ i and beta β N are qualitatively consistent with ideal MHD, although in most cases the amplitude of the measurements exceeds predictions, indicating that the experimental discharges are less stable than expected. Resistive MHD simulations of the response show improved compatibility with the measurements, and the closest agreement is obtained by including the experimental plasma rotation in the simulations. Although the input neutral beam torque is near zero, the simulations show that the corresponding level of rotation can lead to nearly complete screening of the pitch-resonant field component at the q = 2 surface. However, the simulation results exhibit a significant weakening of this screening effect at the lowest rotation levels in the data set, concurrent with predictions of elevated response amplitudes that are consistent with measurements. These comparisons with DIII-D data provide a qualitative validation of a linear, resistive MHD response model.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Investigation of UV, ns-laser damage resistance of hafnia films produced by electron beam evaporation and ion beam sputtering deposition methods

Laser-induced damage in coating materials with a high index of refraction, such as hafnia, limits the performance of high power and high energy laser systems. Understanding the underlying physics responsible for laser damage holds the key for developing damage-resistant optical films. Previous studies have reported a substantial difference in laser damage onset for hafnia films produced by different deposition methods, yet the underlying mechanisms for the observed difference remain elusive. We combined laser damage testing with analytical characterizations and theoretical simulations to investigate the response of hafnia films produced by electron (e-) beam evaporation vs ion beam sputtering (IBS) methods upon UV ns-laser exposure. We found that e-beam produced hafnia films were overall more damage resistant; in addition, we observed a polarization anisotropy associated with the onset of damage in the e-beam films, while this effect was absent in the latter films. The observed differences can be attributed to the stark contrast in the pressure inside the pores inherent in both films. The high pressure inside the IBS-induced nanobubbles has been shown to reduce the threshold for laser-induced plasma breakdown leading to film damage. The polarization effects in the e-beam coatings can be related to the asymmetric electric field intensification induced by the columnar void structure. Our findings provide a fundamental basis for developing strategies to produce laser damage-resistant coatings for UV pulsed laser applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Discovering exceptionally hard and wear-resistant metallic glasses by combining machine-learning with high throughput experimentation

Lack of crystalline order in amorphous alloys, commonly called metallic glasses (MGs), tends to make them harder and more wear-resistant than their crystalline counterparts. However, finding inexpensive MGs is daunting; finding one with enhanced wear resistance is a further challenge. Relying on machine learning (ML) predictions of MGs alone requires a highly precise model; however, incorporating high-throughput (HiTp) experiments into the search rapidly leads to higher performing materials even from moderately accurate models. Here, we exploit this synergy between ML predictions and HiTp experimentation to discover new hard and wear-resistant MGs in the Fe–Nb–B ternary material system. Several of the new alloys exhibit hardness greater than 25 GPa, which is over three times harder than hardened stainless steel and only surpassed by diamond and diamond-like carbon. This ability to use less than perfect ML predictions to successfully guide HiTp experiments, demonstrated here, is especially important for searching the vast Multi-Principal-Element-Alloy combinatorial space, which is still poorly understood theoretically and sparsely explored experimentally.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Resistively loaded coplanar waveguide for microwave measurements of induced carriers

We describe the use of a coplanar waveguide (CPW) whose slots are filled with a resistive film, a resistively loaded CPW (RLCPW), to measure two-dimensional electron systems (2DESs). The RLCPW applied to the sample hosting the 2DES provides a uniform metallic surface serving as a gate to control the areal charge density of the 2DES. As a demonstration of this technique, we present measurements on a Si metal–oxide–semiconductor field-effect transistor and a model that successfully converts microwave transmission coefficients into conductivity of a nearby 2DES capacitively coupled to the RLCPW. We also describe the process of fabricating the highly resistive metal film required for fabrication of the RLCPW.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

A resistive MHD model and simulation on plasma flow evolution in the presence of resonant magnetic perturbation in a tokamak

Nonaxisymmetric magnetic fields such as the intrinsic error field and the externally applied resonant magnetic perturbation (RMP) in a tokamak are known to influence the plasma momentum transport and flow evolution through plasma response, which itself strongly depends on the plasma flow as well. The nonlinear interaction between plasma response and flow has been previously modeled in the conventional error field theory with the “no-slip” condition, which has been recently extended to allow the “free-slip” condition. In this work, we further target this specific process and numerically simulate the nonlinear plasma response and flow evolution in the presence of a single-helicity RMP in a circular-shaped model tokamak configuration, based on the full resistive MHD model in the initial-value code NIMROD. Time evolution of the parallel (to k) flow or “slip frequency” profile and its asymptotic steady state obtained from the NIMROD simulations are compared with both conventional and extended nonlinear response theories. Here, k is the wave vector of the propagating island. Good agreement with the extended theory with free-slip condition has been achieved for the parallel flow profile evolution in response to RMP in all resistive regimes, whereas the difference from the conventional theory with the no-slip condition tends to diminish as the plasma resistivity approaches zero.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Resistive switching properties of monolayer h-BN atomristors with different electrodes

Resistive switching properties based on molecular beam epitaxy-grown monolayer hexagonal boron nitride (h-BN) atomristors are studied by using metal insulator metal configurations with different electrode materials. Au/monolayer h-BN/Ni devices demonstrate a forming-free bipolar resistive switching (BRS) behavior, a good endurance with up to 97 cycles at a high compliance current of 100 mA, an average on/off ratio of 10 3 , and a low set/reset voltage variability. Metal/monolayer h-BN/graphite/Co devices exhibit self-compliant current BRS characteristics. Both metal/h-BN/Ni and metal/h-BN/graphite/Co devices show the coexistence of BRS, unipolar resistive switching (URS), and nonvolatile threshold switching (TH) modes. The formation of conductive filaments is attributed to the diffusion and trapping of metal ions on the defect sites driven by the electric field, while the rupture is driven by the electric field in BRS and by Joule heating in URS and TH modes.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗
DOE OSTI2022

Investigation of resistive magnetic field generation by intense proton beams in dense plasmas

Current and future applications of intense proton sources abound, including radiography, cancer therapy, warm dense matter generation, and inertial confinement fusion. With increasingly efficient acceleration and focusing mechanisms, proton current densities may soon approach and exceed 10 10 A/cm 2 , e.g., via intense laser drivers. Simulations have previously shown that in this current density regime, beam-induced field generation plays a significant role in beam transport through dense plasmas. Here, we present a theoretical model for the generation of resistive magnetic fields by intense proton beam transport through solid density plasmas. The theoretical evolution of the magnetic field profile is calculated using an analytic model for aluminum resistivity, heat capacity, and stopping power, applicable from cold matter to hot plasma. The effects of various beam and material parameters on the field are investigated and explained for both monoenergetic and Maxwellian proton beams. For a proton beam with Maxwellian temperature 5 MeV and total energy 10 J, the model calculates resistive magnetic fields up to 150 T in aluminum. In conclusion, the calculated field profiles from several beam cases are compared with 2D hybrid particle-in-cell simulations, with good agreement found in magnitude and time scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Mitigation of resistive drift wave and ion temperature gradient instabilities by velocity shear

The effects of velocity shear on the resistive drift wave instability in the non-adiabatic limit and the toroidal ion temperature gradient instability are investigated for a plasma of inhomogeneous density/ion temperature, respectively. For the resistive drift wave, we find that the instability growth rate decreases monotonically with increasing magnitude of shear, but we find that complete stabilization is impossible. For the ion temperature gradient instability, we find that the standard WKB approximation is insufficient to describe the full behavior of the instability, and that an analysis of the localized eigenmode problem reveals two separate unstable solutions, which the WKB approximation does not predict. The impact of flow shear on these two new unstable solutions is discussed. In both resistive drift wave and ion temperature gradient instabilities, the sheared flow causes a shifting, tilting, and sharpening of the electrostatic potential eddies.

Physics↗
DOE OSTI2024

Probabilistic locked mode predictor in the presence of a resistive wall and finite island saturation in tokamaks

We present a framework for estimating the probability of locking to an error field in a rotating tokamak plasma. This leverages machine learning methods trained on data from a mode-locking model, including an error field, resistive magnetohydrodynamics modeling of the plasma, a resistive wall, and an external vacuum region, leading to a fifth-order ordinary differential equation (ODE) system. It is an extension of the model without a resistive wall introduced by Akçay et al. [Phys. Plasmas 28, 082106 (2021)]. Tearing mode saturation by a finite island width is also modeled. We vary three pairs of control parameters in our studies: the momentum source plus either the error field, the tearing stability index, or the island saturation term. The order parameters are the time-asymptotic values of the five ODE variables. Normalization of them reduces the system to 2D and facilitates the classification into locked (L) or unlocked (U) states, as illustrated by Akçay et al., [Phys. Plasmas 28, 082106 (2021)]. This classification splits the control space into three regions: L̂, with only L states; Û, with only U states; and a hysteresis (hysteretic) region Ĥ, with both L and U states. In regions L̂ and Û, the cubic equation of torque balance yields one real root. Region Ĥ has three roots, allowing bifurcations between the L and U states. The classification of the ODE solutions into L/U is used to estimate the locking probability, conditional on the pair of the control parameters, using a neural network. We also explore estimating the locking probability for a sparse dataset, using a transfer learning method based on a dense model dataset.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗