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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24

Wide-Bandgap CIAS Thin-film Photovoltaics with Transparent Back Contacts for Next-Generation Single and Multijunction Devices

Future spacecraft and high-altitude airship (HAA) technologies will require high array specific power (W/kg), which can be met using thin-film photovoltaics (PV) on lightweight and flexible substrates. It has been calculated that the thin-film array technology, including the array support structure, begins to exceed the specific power of crystalline multi-junction arrays when the thin-film device efficiencies begin to exceed 12%. Thin-film PV devices have other advantages in that they are more easily integrated into HAA s, and are projected to be much less costly than their crystalline PV counterparts. Furthermore, it is likely that only thin-film array technology will be able to meet device specific power requirements exceeding 1 kW/kg (photovoltaic and integrated substrate/blanket mass only). Of the various thin-film technologies, single junction and radiation resistant CuInSe2 (CIS) and associated alloys with gallium, aluminum and sulfur have achieved the highest levels of thin-film device performance, with the best efficiency, reaching 19.2% under AM1.5 illumination conditions and on thick glass substrates.(3) Thus, it is anticipated that single- and tandem-junction devices with flexible substrates and based on CIS and related alloys could achieve the highest levels of thin-film space and HAA solar array performance.

Woods, Lawrence M.↗

The Effectiveness of TAG or Guard-Gates in SET Suppression Using Delay and Dual-Rail Configurations at 0.35 microns

Design options for decreasing the susceptibility of integrated circuits to Single Event Upset (SEU) fall into two categories: (1) increasing the critical charge to cause an upset at a particular node, and (2) employing redundancy to mask or correct errors. With decreasing device sizes on an Integrated Circuit (IC), the amount of charge required to represent a logic state has steadily reduced. Critical charge methods such as increasing drive strength or increasing the time required to change state as in capacitive or resistive hardening or delay based approaches extract a steadily increasing penalty as a percentage of device resources and performance. Dual redundancy is commonly assumed only to provide error detection with Triple Modular Redundancy (TMR) required for correction, but less well known methods employ dual redundancy to achieve full error correction by voting two inputs with a prior state to resolve ambiguity. This requires special circuits such as the Whitaker latch [1], or the guard-gate [2] which some of us have called a Transition AND Gate (TAG) [3]. A 2-input guard gate is shown in Figure 1. It is similar to a Muller Completion Element [4] and relies on capacitance at node "out" to retain the prior state when inputs disagree, while eliminating any output buffer which would be susceptible to radiation strikes. This paper experimentally compares delay based and dual rail flip-flop designs wherein both types of circuits employ guard-gates to optimize layout and performance, and draws conclusions about design criteria and suitability of each option. In both cases a design goal is protection against Single Event Transients (SET) in combinational logic as well as SEU in the storage elements. For the delay based design, it is also a goal to allow asynchronous clear or preset inputs on the storage elements, which are often not available in radiation tolerant designs.

Shuler, Robert L.↗

Thermal coupling apparatus for electroexplosive devices

This paper describes the equipment for nondestructive testing of electroexplosive devices using a thermal coupling technique. The technique utilizes a self-balancing bridge to apply a nominal amount of power to the bridge wire of the device. The bridge wire behaving as a thermal sensor detects heat flow into the device when heat is preferentially directed down the center of the explosive column toward the bridge wire. Thermal equilibrium is upset and the change in power from the self-balancing bridge is measured directly in watts. Faults such as omissions, incorrect materials, contamination, and so on, can be detected by observing the rate of heat flow to the bridge wire. The response is indicative of the thermal resistance and diffusivity of the system. The paper also presents data on electroexplosive devices loaded with inert and explosive materials.

Menichelli, V. J.↗

Progress in MBE grown type-II superlattice photodiodes

We report on the status of GaSb/InAs type-II superlattice diodes grown and fabricated at the Jet Propulsion Laboratory designed for infrared absorption in the 8-12(mu)m range. Recent devices have produced detectivities as high as 8x10 to the tenth power Jones with a differential resistance-area product greater than 6 Ohmcm(sup 2) at 80K with a long wavelength cutoff of approximately 12(mu)m. The measured quantum efficiency of these front-side illuminated devices is close to 30% in the 10-11(mu)m range without antireflection coatings.

molecular beam epitaxy (MBE)↗

Flexible or rigid extending arm

One motion of a manual clamp makes a universally flexible arm instantly rigid in any configuration. Device is locked rigid by meshing of gear teeth, providing great resistance to loading.

Siebert, C. J.↗

Studies of silicon PN junction solar cells

Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.

Lindholm, F. A.↗

Optimizing indium antimonide (InSb) detectors for low background operation

The various noise sources that affect InSb detectors (and similar voltaic devices) are discussed and calculated. Methods are given for measuring detector resistance, photon loading, detector and amplifier capacitance, amplifier frequency response, amplifier noise, and quantum efficiency. A photovoltaic InSb detector with increased sensitivity in the 1 to 5.6 mu region is dicussed.

Treffers, R. R.↗

Importance of gravity for plant growth and behavior

Accomplishments during the past fiscal year consisted of (1) completion of research on a study of the kinetics of damping out of circummutation when the axially directed g-force was abruptly eliminated (Research Task NULYRL). (2) Further experiments were accomplished on a comprehensive study, underway for several years, to validate (or invalidate) the use of clinostat rotation as a hypogravity simulation device. (3) Some of our earlier (unpublished) observations on plant seedlings resistance to g-loading were evaluated, interpreted, and a paper was submitted for publication (Research Task HYGEFF). (4) In what has been called ""Shuttle middeck locker ecology" an attempt to acquire reliable empirical information on the thermal profile experienced by test packages housed in middeck lockers (MDDL) during shuttle flights at long last seems to be yielding some results.

Brown, A. H.↗

Quantification of the memory imprint effect for a charged particle environment

The effects of total accumulated dose on the single-event vulnerability of NMOS resistive-load SRAMs are investigated. The bias-dependent shifts in device parameters can imprint the memory state present during exposure or erase the imprinted state. Analysis of these effects is presented along with an analytic model developed for the quantification of these effects. The results indicate that the imprint effect is dominated by the difference in the threshold voltage of the n-channel devices.

Bhuva, B. L.↗

Acquisition and correlation of cryogenic nitrogen mass flow data through a multiple orifice Joule-Thomson device

Liquid nitrogen mass flow rate, pressure drop, and temperature drop data were obtained for a series of multiple orifice Joule-Thomson devices, known as Visco Jets, over a wide range of flow resistance. The test rig used to acquire the data was designed to minimize heat transfer so that fluid expansion through the Visco Jets would be isenthalpic. The data include a range of fluid inlet pressures from 30 to 60 psia, fluid inlet temperatures from 118 to 164 R, outlet pressures from 2.8 to 55.8 psia, outlet temperatures from 117 to 162 R and flow rate from 0.04 to 4.0 lbm/hr of nitrogen. A flow rate equation supplied by the manufacturer was found to accurately predict single-phase (noncavitating) liquid nitrogen flow through the Visco Jets. For cavitating flow, the manufacturer's equation was found to be inaccurate. Greatly improved results were achieved with a modified version of the single-phase equation. The modification consists of a multiplication factor to the manufacturer's equation equal to one minus the downstream quality on an isenthalpic expansion of the fluid across the Visco Jet. For a range of flow resistances represented by Visco Jet Lohm ratings between 17,600 and 80,000, 100 percent of the single-phase data and 85 percent of the two-phase data fall within + or - 10 percent of predicted values.

Papell, S. Stephen↗

Device Measures Angle Of Deployment

Simple electromechanical device indicates angular position of unfolding panel during and after deployment. Resistance of potentiometer gradually increases as unfolding of solar panel about hinge moves wiper of potentiometer. At full deployment, panel pushes and opens normally closed switch. Designed for use on panel of solar photovoltaic cells in spacecraft, modified for use in other, similar position-indicating applications.

Jermakian, Joel B.↗

Emerging applications of high temperature superconductors for space communications

Proposed space missions require longevity of communications system components, high input power levels, and high speed digital logic devices. The complexity of these missions calls for a high data bandwidth capacity. Incorporation of high temperature superconducting (HTS) thin films into some of these communications system components may provide a means of meeting these requirements. Space applications of superconducting technology has previously been limited by the requirement of cooling to near liquid helium temperatures. Development of HTS materials with transition temperatures above 77 K along with the natural cooling ability of space suggest that space applications may lead the way in the applications of high temperature superconductivity. In order for HTS materials to be incorporated into microwave and millimeter wave devices, the material properties such as electrical conductivity, current density, surface resistivity and others as a function of temperature and frequency must be well characterized and understood. The millimeter wave conductivity and surface resistivity were well characterized, and at 77 K are better than copper. Basic microwave circuits such as ring resonators were used to determine transmission line losses. Higher Q values than those of gold resonator circuits were observed below the transition temperature. Several key HTS circuits including filters, oscillators, phase shifters and phased array antenna feeds are feasible in the near future. For technology to improve further, good quality, large area films must be reproducibly grown on low dielectric constant, low loss microwave substrates.

Heinen, Vernon O.↗

Fabrication of Tunnel Junctions For Direct Detector Arrays With Single-Electron Transistor Readout Using Electron-Beam Lithography

This paper will describe the fabrication of small aluminum tunnel junctions for applications in astronomy. Antenna-coupled superconducting tunnel junctions with integrated single-electron transistor readout have the potential for photon-counting sensitivity at sub-millimeter wavelengths. The junctions for the detector and single-electron transistor can be made with electron-beam lithography and a standard self-aligned double-angle deposition process. However, high yield and uniformity of the junctions is required for large-format detector arrays. This paper will describe how measurement and modification of the sensitivity ratio in the resist bilayer was used to greatly improve the reliability of forming devices with uniform, sub-micron size, low-leakage junctions.

Stevenson, T. R.↗

High Temperature Superconductor Josephson Weak Links

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Hunt, B. D.↗

Carbon Nanofiber-Based, High-Frequency, High-Q, Miniaturized Mechanical Resonators

High Q resonators are a critical component of stable, low-noise communication systems, radar, and precise timing applications such as atomic clocks. In electronic resonators based on Si integrated circuits, resistive losses increase as a result of the continued reduction in device dimensions, which decreases their Q values. On the other hand, due to the mechanical construct of bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators, such loss mechanisms are absent, enabling higher Q-values for both BAW and SAW resonators compared to their electronic counterparts. The other advantages of mechanical resonators are their inherently higher radiation tolerance, a factor that makes them attractive for NASA s extreme environment planetary missions, for example to the Jovian environments where the radiation doses are at hostile levels. Despite these advantages, both BAW and SAW resonators suffer from low resonant frequencies and they are also physically large, which precludes their integration into miniaturized electronic systems. Because there is a need to move the resonant frequency of oscillators to the order of gigahertz, new technologies and materials are being investigated that will make performance at those frequencies attainable. By moving to nanoscale structures, in this case vertically oriented, cantilevered carbon nanotubes (CNTs), that have larger aspect ratios (length/thickness) and extremely high elastic moduli, it is possible to overcome the two disadvantages of both bulk acoustic wave (BAW) and surface acoustic wave (SAW) resonators. Nano-electro-mechanical systems (NEMS) that utilize high aspect ratio nanomaterials exhibiting high elastic moduli (e.g., carbon-based nanomaterials) benefit from high Qs, operate at high frequency, and have small force constants that translate to high responsivity that results in improved sensitivity, lower power consumption, and im - proved tunablity. NEMS resonators have recently been demonstrated using topdown, lithographically fabricated ap - proaches to form cantilever or bridgetype structures. Top-down approaches, however, rely on complicated and expensive e-beam lithography, and often require a release mechanism. Reso - nance effects in structures synthesized using bottom-up approaches have also recently been reported based on carbon nanotubes, but such approaches have relied on a planar two-dimensional (2D) geometry. In this innovation, vertically aligned tubes synthesized using a bottom- up approach have been considered, where the vertical orientation of the tubes has the potential to increase integration density even further. The simulation of a vertically oriented, cantilevered carbon nanotube was performed using COMSOL Multi - physics, a finite element simulation package. All simulations were performed in a 2D geometry that provided consistent results and minimized computational complexity. The simulations assumed a vertically oriented, cantilevered nanotube of uniform density (1.5 g/cu cm). An elastic modulus was assumed to be 600 GPa, relative permittivity of the nanotube was assumed to be 5.0, and Poisson s ratio was assumed to be 0.2. It should be noted that the relative permittivity and Poisson s ratio for the nanotubes of interest are not known accurately. However, as in previous simulations, the relative permittivity and Poisson s ratios were treated as weak variables in the simulation, and no significant changes were recognized when these variables were varied.

Kaul, Anupama B.↗

Fabrication of Extruded Polyphenylsulfone – Boron Nitride Composite Tapes

Polyphenylsulfone (PPSU) is a high-temperature, chemically resistant thermoplastic with high impact resistance that is often used in interior aircraft cabin components, medical devices, and membranes. The aforementioned properties have led to interest investigating PPSU’s compatibility with hexagonal boron nitride (hBN) platelets as a thermally conductive, electrical composite insulator for high power-density electric machines. Preliminary trials extruding PPSU-hBN composite tapes showed promising dielectric properties and higher thermal conductivity as a function of hBN concentration compared to their neat analog. On the other hand, only few studies have reported on the extrusion process and resulting thermo-mechanical properties for PPSU and its composites made with chopped fiber reinforcement or fillers, none of which containing boron nitride filler. Prospects may exist for this type of material to be incorporated into extrusion-based additive manufacturing techniques to print other composites bearing unique properties useful for aerospace. Loading levels with up to approximately 23 wt% were achieved using micro-size BN platelets without observing any significant affects to PPSU’s glass-transition temperature. This work includes a description of the rheological properties of PPSU, the extrusion parameters for mixing and compounding the PPSU-hBN composite tapes, and the thermal and thermo-mechanical properties of PPSU-hBN composites.

polyphenylsulfone↗

Fabrication of Extruded Polyphenylsulfone – Boron Nitride Composite Tapes

Polyphenylsulfone (PPSU) is a high-temperature, chemically resistant thermoplastic with high impact resistance that is often used in interior aircraft cabin components, medical devices, and membranes. The aforementioned properties have led to interest investigating PPSU’s compatibility with hexagonal boron nitride (hBN) platelets as a thermally conductive, electrical composite insulator for high power-density electric machines. Preliminary trials extruding PPSU-hBN composite tapes showed promising dielectric properties and higher thermal conductivity as a function of hBN concentration compared to their neat analog. On the other hand, only few studies have reported on the extrusion process and resulting thermo-mechanical properties for PPSU and its composites made with chopped fiber reinforcement or fillers, none of which contained boron nitride filler. Prospects may exist for this type of material to be incorporated into extrusion-based additive manufacturing techniques to print other composites bearing unique properties useful for aerospace. Loading levels with up to approximately 23 wt% were achieved using micro-size BN platelets without observing any significant affects to PPSU’s glass-transition temperature. This work includes a description of the rheological properties of PPSU, the extrusion parameters for mixing and compounding the PPSU-hBN composite tapes, and the thermal and thermo-mechanical properties of PPSU-hBN composites.

Tiffany Williams↗

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗