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At least 433 records · Page 24

Challenges in materials and devices for resistive-switching-based neuromorphic computing

This tutorial describes challenges and possible avenues for the implementation of the components of a solid-state system, which emulates a biological brain. The tutorial is devoted mostly to a charge-based (i.e. electric controlled) implementation using transition metal oxide materials, which exhibit unique properties that emulate key functionalities needed for this application. In Sec. I, we compare the main differences between a conventional computational machine, based on the Turing-von Neumann paradigm, and a neuromorphic machine, which tries to emulate important functionalities of a biological brain. We also describe the main electrical properties of biological systems, which would be useful to implement in a charge-based system. In Sec. II, we describe the main components of a possible solid-state implementation. In Sec. III, we describe a variety of Resistive Switching phenomena, which may serve as the functional basis for the implementation of key devices for neuromorphic computing. In Sec. IV, we describe why transition metal oxides are promising materials for future neuromorphic machines. Theoretical models describing different resistive switching mechanisms are discussed in Sec. V, while existing implementations are described in Sec. VI. Section VII presents applications to practical problems. We list in Sec. VIII important basic research challenges and open issues. Here, we discuss issues related to specific implementations, novel materials, devices, and phenomena. The development of reliable, fault tolerant, energy efficient devices, their scaling, and integration into a neuromorphic computer may bring us closer to the development of a machine that rivals the brain.

36 MATERIALS SCIENCE↗

Leak Detection and H 2 Sensor Development

Low-cost, durable, and reliable Hydrogen safety sensor for vehicle, stationary, and infrastructure applications. A new zirconia, electrochemical-based sensor technology is being transitioned out of the laboratory and into an advanced testing phase for vehicular and stationary H 2 safety applications. Mixed potential sensors are a class of electrochemical devices that develop an open-circuit electromotive force due to the difference in the kinetics of the redox reactions of various gaseous species at each electrode/electrolyte/gas interface, referred to as the triple phase boundary (TPB). Therefore, these sensors have been considered for the sensing of various reducible or oxidizable gas species in the presence of oxygen. Based on this principle, a unique sensor design was developed by LANL and LLNL. The uniqueness of this sensor derives from minimizing heterogeneous catalysis (detrimental to sensor response) by avoiding gas diffusion through a catalytically active material and minimizing diffusion path to the TPB. Unlike the conventional design of these devices that use a dense solid electrolyte and porous thin film electrodes (similar to the current state-of-the-art zirconia-based sensors and fuel cells), the design of this sensor uses dense electrodes and porous electrolytes. Such a sensor design facilitates a stable and reproducible device response, since dense electrode morphologies are easy to reproduce and are significantly more stable than the conventional porous morphologies. Moreover, these sensors develop higher mixed potentials since the gas diffusion is through the less catalytically active electrolyte than the electrode. Lastly, the choice of electrodes is primarily based on their O2 reduction kinetics and catalytic properties vis-a-vis the target gas of interest.

08 HYDROGEN↗

Emerging Materials for Plasmonics, Metamaterials and Metasurfaces

This symposium addressed emerging topics of hybrid nanophotonics including plasmonics, metamaterials, metasurfaces, and two-dimensional materials to overcome existing limitations that prevent the development of practical photonic devices. Symposium topics are related to fundamental, basic, and applied research, and the symposium addressed the need for basic and applied research in developing plasmonic materials and metamaterials aiming at fast optical switching including utilizing materials with large broadband optical nonlinearities, the ability to effectively reduce transmission, and ultra-fast response time. The advanced material designs are put forth by numerical and experimental methods with an emphasis on developing hierarchical designs and two/three-dimensional self-assembly of multifunctional materials and advance material concepts including transformational optics. Novel plasmonic materials for optoelectronics with the aim to increase in the data rate are of great interest. Besides that, the efforts are in understanding electromagnetic phenomena in solid-state materials and structure involving the latest developments in semiconductor materials and device physics. In the fundamental research and engineering science, the symposium topics in electronics and material science focus on investigations of novel metamaterial, metasurface and optical component designs as well as diving into developments of alternative materials. The symposium provided a general overview of recent advances in new design concepts and material platforms, including fabrication techniques and promising applications enabled by the new developments.

36 MATERIALS SCIENCE↗

Impact of Wide-Bandgap Technology on Renewable Energy and Smart-Grid Power Conversion Applications Including Storage

Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology.

Castellazzi, Alberto↗

Growth and device processing of hexagonal boron nitride epilayers for thermal neutron and deep ultraviolet detectors

Solid-state neutron detectors with high performance are highly sought after for the detection of fissile materials. However, direct-conversion neutron detectors based on semiconductors with a measureable efficiency have not been realized. We report here the first successful demonstration of a direct-conversion semiconductor neutron detector with an overall detection efficiency for thermal neutrons of 4% and a charge collection efficiency as high as 83%. The detector is based on a 2.7 μm thick {sup 10}B-enriched hexagonal boron nitride (h-BN) epitaxial layer. The results represent a significant step towards the realization of practical neutron detectors based on h-BN epilayers. Neutron detectors based on h-BN are expected to possess all the advantages of semiconductor devices including wafer-scale processing, compact size, light weight, and ability to integrate with other functional devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ultra-low-field magneto-elastocaloric cooling in a multiferroic composite device

Abstract The advent of caloric materials for magnetocaloric, electrocaloric, and elastocaloric cooling is changing the landscape of solid state cooling technologies with potentials for high-efficiency and environmentally friendly residential and commercial cooling and heat-pumping applications. Given that caloric materials are ferroic materials that undergo first (or second) order phase transitions near room temperature, they open up intriguing possibilities for multiferroic devices with hitherto unexplored functionalities coupling their thermal properties with different fields (magnetic, electric, and stress) through composite configurations. Here we demonstrate a magneto-elastocaloric effect with ultra-low magnetic field (0.16 T) in a compact geometry to generate a cooling temperature change as large as 4 K using a magnetostriction/superelastic alloy composite. Such composite systems can be used to circumvent shortcomings of existing technologies such as the need for high-stress actuation mechanism for elastocaloric materials and the high magnetic field requirement of magnetocaloric materials, while enabling new applications such as compact remote cooling devices.

36 MATERIALS SCIENCE↗

Observation of solid-state bidirectional thermal conductivity switching in antiferroelectric lead zirconate (PbZrO 3 )

Materials with tunable thermal properties enable on-demand control of temperature and heat flow, which is an integral component in the development of solid-state refrigeration, energy scavenging, and thermal circuits. Although gap-based and liquid-based thermal switches that work on the basis of mechanical movements have been an effective approach to control the flow of heat in the devices, their complex mechanisms impose considerable costs in latency, expense, and power consumption. As a consequence, materials that have multiple solid-state phases with distinct thermal properties are appealing for thermal management due to their simplicity, fast switching, and compactness. Thus, an ideal thermal switch should operate near or above room temperature, have a simple trigger mechanism, and offer a quick and large on/off switching ratio. In this study, we experimentally demonstrate that manipulating phonon scattering rates can switch the thermal conductivity of antiferroelectric PbZrO 3 bidirectionally by –10% and +25% upon applying electrical and thermal excitation, respectively. Our approach takes advantage of two separate phase transformations in PbZrO 3 that alter the phonon scattering rate in different manners. In this study, we demonstrate that PbZrO 3 can serve as a fast (<1 second), repeatable, simple trigger, and reliable thermal switch with a net switching ratio of nearly 38% from ~1.20 to ~1.65 W m –1 K –1 .

25 ENERGY STORAGE↗

Structural and optical analysis on europium doped AZrO{sub 3} (A=Ba, Ca, Sr) phosphor for display devices application

Behavior displayed by europium doped AZrO{sub 3} phosphor which was synthesized by solid state reaction method. For synthesis of BaZrO{sub 3}, SrZrO{sub 3} and CaZrO{sub 3} phosphor with fixed concentration of europium ion was calcination at 1000°C and sintered at 1300°C following intermediate grinding. Synthesized sample was characterized by X-ray diffraction analysis and crystallite sized was calculated by Scherer’s formula. From PL spectra of prepared phosphors shows intense emission centred at 612nm (red emission) with high intensity for SrZrO{sub 3}:Eu{sup 3+}. For europium doped BaZrO{sub 3} and CaZrO{sub 3} (613nm) phosphor shows less intense PL spectra as compared to SrZrO{sub 3}:Eu{sup 3+}. The strong emission peak of AZrO{sub 3}:Eu{sup 3+} phosphor is due to forced electric dipole transition of {sup 5}D{sub 0} to {sup 7}F{sub 2} centered at 612 and 613nm. It is characteristic red emission for europium ion. The excitation spectra of AZrO{sub 3}:Eu{sup 3+} phosphor mainly consists of the charge transfer and (CTB) of Eu{sup 3+} located in 200–350 nm centred at 254nm. The present phosphors can act as single host for red light emission in display devices. The CIE coordinates were calculated by Spectrophotometric method using the spectral energy distribution of the AZrO{sub 3}:Eu{sup 3+} sample.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Surface Doping Boosts Triplet Generation Yield in Perovskite-Sensitized Upconversion

Triplet–triplet annihilation-based photon upconversion (TTA-UC) can efficiently generate higher energy photons at low relative fluences. Bulk metal halide perovskites have offered promise in efficiently sensitizing molecular triplet states in the solid state, necessary for the integration of TTA-UC into device-based applications. Recent work focused on TTA-UC from a rubrene triplet annihilator sensitized by perovskite thin films has established relatively efficient charge extraction from the perovskite, forming the triplet exciton in rubrene. Yet, the specifics underpinning charge transfer at the perovskite/rubrene interface are not fully elucidated. Here, to improve device performance and study the properties governing charge transfer at the interface, various organic solvents are explored to treat the perovskite surface. Scanning tunneling microscopy and spectroscopy show a difference in the electronic band structure, where both n- and p-type terminated perovskite surfaces are observed depending on the solvent used. Supported by optical spectroscopy, the impact of the perovskite electronic structure is monitored, indicating that n-type perovskite sensitizers feature higher TTA-UC efficiencies due to favorable band bending resulting in efficient hole-mediated triplet formation. Overall, the tuning of the electronic structure of the perovskite sensitizer through solvent treatment is shown to be a key force in tuning the mechanism of efficient triplet generation.

36 MATERIALS SCIENCE↗

Vertically Oriented and Interpenetrating CuSe Nanosheet Films with Open Channels for Flexible All-Solid-State Supercapacitors

As a p-type multifunctional semiconductor, CuSe nanostructures show great promise in optoelectronic, sensing, and photocatalytic fields. Although great progress has been achieved, controllable synthesis of CuSe nanosheets (NSs) with a desirable spacial orientation and open frameworks remains a challenge, and their use in supercapacitors (SCs) has not been explored. Herein, a highly vertically oriented and interpenetrating CuSe NS film with open channels is deposited on an Au-coated polyethylene terephthalate substrate. Such CuSe NS films exhibit high specific capacitance (209 F g–1) and can be used as a carbon black- and binder-free electrode to construct flexible, symmetric all-solid-state SCs, using polyvinyl alcohol–LiCl gel as the solid electrolyte. A device fabricated with such CuSe NS films exhibits high volumetric specific capacitance (30.17 mF cm–3), good cycling stability, excellent flexibility, and desirable mechanical stability. The excellent performance of such devices results from the vertically oriented and interpenetrating configuration of CuSe NS building blocks, which can increase the available surface and facilitate the diffusion of electrolyte ions. Moreover, as a prototype for application, three such solid devices in series can be used to light up a red light-emitting diode.

36 MATERIALS SCIENCE↗

Long-lived electronic spin qubits in single-walled carbon nanotubes

Abstract Electron spins in solid-state systems offer the promise of spin-based information processing devices. Single-walled carbon nanotubes (SWCNTs), an all-carbon one-dimensional material whose spin-free environment and weak spin-orbit coupling promise long spin coherence times, offer a diverse degree of freedom for extended range of functionality not available to bulk systems. A key requirement limiting spin qubit implementation in SWCNTs is disciplined confinement of isolated spins. Here, we report the creation of highly confined electron spins in SWCNTs via a bottom-up approach. The record long coherence time of 8.2 µs and spin-lattice relaxation time of 13 ms of these electronic spin qubits allow demonstration of quantum control operation manifested as Rabi oscillation. Investigation of the decoherence mechanism reveals an intrinsic coherence time of tens of milliseconds. These findings evident that combining molecular approaches with inorganic crystalline systems provides a powerful route for reproducible and scalable quantum materials suitable for qubit applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Optical and structural analysis of lead bismuth silicate glasses

Glasses having compositions 20PbO(79.5-x)Bi{sub 2}O{sub 3}xSiO{sub 2} (x = 10,30,50) doped with 0.5 mole% of Nd{sup 3+} ions were prepared by melt quench technique. The spectroscopic properties of the glasses were investigated using optical absorption and fluorescence spectra. The structural investigations of these glasses were carried out by recording the IR spectra. The variation of {Omega}{sub 2} with Bi{sub 2}O{sub 3} content has been attributed to changes in the asymmetry of the ligand field at the rare earth ion site and to the changes in the rare earth oxygen covalency. Heavy metal oxide glasses have been used as potential candidate in solid state laser, solar concentrators, optical detector, optical fiber and fluorescent display devices.

36 MATERIALS SCIENCE↗

Cracking the failure of lithium batteries

Lithium batteries that use a solid electrolyte have the potential to improve safety and increase the amount of stored energy . This makes solid-state electrochemical cells a promising option for electric vehicles and wearable devices. However, nonuniform plating or stripping of lithium at the interface between an anode (negative electrode) and the electrolyte during charging and discharging leads to growth of detrimental lithium filaments (dendrites) that short-circuit the battery cell. This problem even occurs when the battery operates at small currents. The underlying mechanism of this failure is not well understood. On page 311 of this issue, Wang et al. (1) report that structural defects accumulate in the lithium metal anode under repeated charging and discharging at a small current. This is similar to mechanical fatigue that is observed over longer periods of intermittent straining of a material. Here, the observation could guide the design of lithium batteries with increased life span.

25 ENERGY STORAGE↗

Cobalt Polypyridyl Complexes as Transparent Solution-Processable Solid-State Charge Transport Materials

Charge transport materials (CTMs) are traditionally inorganic semiconductors or metals. Yet, over the past few decades, new classes of solution-processable CTMs have evolved alongside new concepts for fabricating electronic devices at low cost and with exceptional properties. The vast majority of these novel materials are organic compounds and the use of transition metal complexes in electronic applications remains largely unexplored. In this work, a solution-processable solid-state charge transport material composed of a blend of [Co(bpyPY4)](OTf) 2 and Co(bpyPY4)](OTf) 3 where bpyPY4 is the hexadentate ligand 6,6'-bis(1,1-di(pyridin-2-yl)ethyl)-2,2'-bipyridine and OTf - is the trifluoromethanesulfonate anion is reported. Surprisingly, these films exhibit a negative temperature coefficient of conductivity (dσ/d T ) and non-Arrhenius behavior, with respectable solid-state conductivities of 3.0 S m -1 at room temperature and 7.4 S m -1 at 4.5 K. When employed as a CTM in a solid-state dye-sensitized solar cell, these largely amorphous, transparent films afford impressive solar energy conversion efficiencies of up to 5.7%. Organic–inorganic hybrid materials with negative temperature coefficients of conductivity generally feature extended flat π-systems with strong π–π interactions or high crystallinity. The lack of these features promotes [Co(bpyPY4)](OTf) 2+ x films as a new class of CTMs with a unique charge transport mechanism that remains to be explored.

36 MATERIALS SCIENCE↗

Donor bound excitons in ZnSe nanoresonators - Applications in quantum information science

Here we summarize the advantages of excitons bound to isolated fluorine donor in ZnSe/ZnMgSe quantum well nano-structures. Devices based on these semiconductors, are particularly suited to implement concepts of the optical manipulation of quantum states in solid-state material. The fluorine donor in ZnSe provides a physical qubit with potential advantages over previously researched qubits. In this context we show several initial demonstrations of devices, such as a low-threshold microdisk laser and an indistinguishable single photon source. Additionally we demonstrate the realization of a controllable three-level-system qubit consisting of a single Fluorine donor in a ZnSe nano-pillar, which provides an optical accessible single electon spin qubit.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

The Performance of CH3NH3PbI3 - Nanoparticles based – Perovskite Solar Cells Fabricated by Facile Powder press Technique

Highlights: • Perovskite nanoparticles (PNs) were prepared using simple solid-state technique. • Perovskite layer has been deposited by facile powder press technique - a solution cum vacuum-free. • Fabricated device structure: FTO/c-TiO{sub 2}/mp-TiO{sub 2}/Perovskite/CuI/Cr/Pt-coated FTO. • 1:3 M ratio of PbI{sub 2} in MAI resulted in achieving a PCE of 3.90%. • From the stability test, it is inferred that deterioration in ‘η’ and ‘V{sub OC}’ was by 27.87% and 29.23% respectively. - Abstract: Here, we have introduced a facile solid-state route assisted method to prepare CH{sub 3}NH{sub 3}PbI{sub 3} perovskite nanoparticles (PNs) and together with a facile - powder press technique, for the deposition of prepared PNs - a solution cum vacuum-free route. The perovskite layer was prepared using different lead iodide (PbI{sub 2}) precursor molar concentrations (0.5, 1, 1.5, 2 mmol) and the PbI{sub 2} concentration was found to have a significant impact on the structural, optical, morphological and electrical properties. The sample prepared using molar ratio PbI{sub 2}: MAI at 1:3 shows the optimal bandgap value (∼1.51 eV), broader band edge peak at 755 nm and found have good optical property for photovoltaic (PV) applications. The J–V performance of the fabricated perovskite device with FTO/c-TiO{sub 2}/mp-TiO{sub 2}/Perovskite/CuI/ Cr/Pt-coated FTO counter electrode has been studied. The device fabricated using the concentration at PbI{sub 2}:MAI 1:3 achieved a PCE of 3.9% and resulted in better long-term stability with deterioration in η and V{sub OC} by 27.87% and 29.23% after 15 days.

14 SOLAR ENERGY↗

Modular cryogenic interconnects for multi-qubit devices

We have developed a modular interconnect platform for the control and readout of multiple solid-state qubits at cryogenic temperatures. The setup provides 74 filtered dc-bias connections, 32 control and readout connections with −3 dB frequency above 5 GHz, and 4 microwave feed lines that allow low loss (less than 3 dB) transmission 10 GHz. The incorporation of a radio-frequency interposer enables the platform to be separated into two printed circuit boards, decoupling the simple board that is bonded to the qubit chip from the multilayer board that incorporates expensive connectors and components. This modular approach lifts the burden of duplicating complex interconnect circuits for every prototype device. We report the performance of this platform at milli-Kelvin temperatures, including signal transmission and crosstalk measurements.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

High-Q CMOS-integrated photonic crystal microcavity devices

Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former’s low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗