Evaluation of Versalink 143 as an Isolation Layer for High-G Survival.
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According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.
The engulfment of substellar bodies (SBs), such as brown dwarfs and planets, by giant stars is a possible explanation for rapidly rotating giants, lithium-rich giants, and the presence of SBs in close orbits around subdwarfs and white dwarfs. We perform three-dimensional hydrodynamical simulations of the flow in the vicinity of an engulfed SB. We model the SB as a rigid body with a reflective surface because it cannot accrete. This reflective boundary changes the flow morphology to resemble that of engulfed compact objects with outflows. We measure the drag coefficients for the ram-pressure and gravitational drag forces acting on the SB, and use them to integrate its trajectory inside the star. We find that engulfment can increase the luminosity of a 1 M ⊙ star by up to a few orders of magnitude. The time for the star to return to its original luminosity is up to a few thousand years when the star has evolved to ≈10 R ⊙ and up to a few decades at the tip of the red giant branch (RGB). No SBs can eject the envelope of a 1 M ⊙ star before it evolves to ≈10 R ⊙ if the orbit of the SB is the only energy source contributing to the ejection. In contrast, SBs as small as ≈10 MJup can eject the envelope at the tip of the RGB. The numerical framework we introduce here can be used to study planetary engulfment in a simplified setting that captures the physics of the flow at the scale of the SB.
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Effect of systematic training on tolerance of white rats to prolonged hypodynamia and isolation
Resistance of bacterial endospores to unfavorable environment - tolerance of space environment