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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 433 records · Page 24

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

GaN devices play a major role in modern electronics, providing high-power handling, efficient high-frequency operation, and resilience in harsh environments. However, electric field crowding at the edge of the anode often limits its full potential, leading to single-event effects (SEEs) at lower bias voltages under heavy ion radiation. Here, in this work, we report on the performance of homojunction GaN vertical PiN diodes with a hybrid edge termination design under heavy ion irradiation, specifically, oxygen ions, chlorine ions, Cf-252 fission fragments, and alpha particles from an Am-241 source. The unique hybrid edge termination (HET) design provides better electric field management, preventing breakdown from occurring at the edge of the anode at lower voltages. The results of this study reveal that these devices exhibit excellent tolerance to 12-MeV oxygen and 16-MeV chlorine ions, owing to their low linear energy transfer (LET) and range in GaN. However, single-event burnout (SEB) is observed during the Cf-252 exposure at about 50% of the diodes' electrical breakdown voltage due to the presence of higher LET and longer-range ions. Optical and scanning electron microscopy (SEM) reveal that the damage that caused by SEB lies close to the center of these devices rather than the anode edge. Devices with junction termination extension (JTE) instead of HET edge termination also show similar SEB when irradiated with Cf-252 fission fragments. Physical damage due to SEB occurs at the edge of the anode for these devices. These comparative results show the benefits of HET for enhancing the resistance of GaN-based PiN diodes to heavy ion irradiation.

42 ENGINEERING↗

Search for the chiral magnetic effect through beam energy dependence of charge separation using event shape selection

High-energy, heavy-ion collisions can create local domains of chirality-imbalanced quarks, reflecting the topological features of quantum chromodynamics. The chiral magnetic effect (CME) predicts an electric charge separation of quarks in such topological domains along the magnetic field ($\vec{B}$) generated by the passing of two high-Z nuclei. Here, we use a correlation observable Δ⁢𝛾$^{112}$ between charged meson pairs to detect the CME-induced charge separation and a novel event shape selection (ESS) method to mitigate the background effects related to elliptic flow (𝑣 2 ). The ESS method classifies events based on the emission pattern of final-state particles and determines Δ⁢𝛾$^{112}_{ESS}$ from the zero-flow limit. We reconstruct the $\vec{B}$ field direction from the spectator nucleons, which minimizes backgrounds unrelated to the collective motion of the system. In this work, we report the measurements of Δ⁢𝛾$^{112}$ and a background indicator Δ⁢𝛾$^{132}$ in Au+Au collisions from the Brookhaven National Laboratory Relativistic Heavy Ion Collider (RHIC) Beam Energy Scan phase II and at the top RHIC energy. After background suppression, Δ⁢𝛾$^{132}_{ESS}$ aligns with zero, and Δ⁢𝛾$^{112}_{ESS}$ is reduced to no more than 20% of Δ⁢𝛾$^{112}$. We observe a finite residual charge separation with 2.5⁢𝜎, 3⁢𝜎, and 3.2⁢𝜎 significance in the 20–50% centrality range of Au + Au collisions at 11.5, 14.6, and 19.6 GeV. The results at 17.3 and 27 GeV also show positive values but with a lower significance of 1.3⁢𝜎 and 1.1⁢𝜎, respectively. The corresponding Δ⁢𝛾$^{112}_{ESS}$ values at 7.7, 9.2, and 200 GeV are consistent with zero within uncertainties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

ABINIT: Overview and focus on selected capabilities

ABINIT is probably the first electronic-structure package to have been released under an open-source license about 20 years ago. It implements density functional theory, density-functional perturbation theory (DFPT), many-body perturbation theory (GW approximation and Bethe–Salpeter equation), and more specific or advanced formalisms, such as dynamical mean-field theory (DMFT) and the “temperature-dependent effective potential” approach for anharmonic effects. Relying on planewaves for the representation of wavefunctions, density, and other space-dependent quantities, with pseudopotentials or projector-augmented waves (PAWs), it is well suited for the study of periodic materials, although nanostructures and molecules can be treated with the supercell technique. The present article starts with a brief description of the project, a summary of the theories upon which ABINIT relies, and a list of the associated capabilities. It then focuses on selected capabilities that might not be present in the majority of electronic structure packages either among planewave codes or, in general, treatment of strongly correlated materials using DMFT; materials under finite electric fields; properties at nuclei (electric field gradient, Mössbauer shifts, and orbital magnetization); positron annihilation; Raman intensities and electro-optic effect; and DFPT calculations of response to strain perturbation (elastic constants and piezoelectricity), spatial dispersion (flexoelectricity), electronic mobility, temperature dependence of the gap, and spin-magnetic-field perturbation. The ABINIT DFPT implementation is very general, including systems with van der Waals interaction or with noncollinear magnetism. Community projects are also described: generation of pseudopotential and PAW datasets, high-throughput calculations (databases of phonon band structure, second-harmonic generation, and GW computations of bandgaps), and the library libpaw. ABINIT has strong links with many other software projects that are briefly mentioned.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Modelling of electrostatic ion-scale turbulence in divertor tokamaks with the gyrokinetic code $\mathrm{COGENT}$

Here, continuum gyrokinetic simulations of electrostatic ion scale turbulence are presented for the case of a diverted (single-null) tokamak geometry. The simulation model, implemented in the finite-volume code COGENT, solves the long-wavelength limit of the full-F gyrokinetic equation for ion species coupled to a vorticity equation for electrostatic potential variations, where a fluid model is used for an electron response. The model describes the ion scale ion temperature gradient (ITG) and resistive drift modes as well as neoclassical ion physics effects. Different turbulence regimes are observed depending on the plasma profiles, and the roles of a self-consistent background electric field and an X-point geometry are explored. In particular, increasing the pedestal density gradient and the corresponding radial electric field is demonstrated to suppress the ITG turbulence, whereas the same edge plasma background can still be destabilized by the resistive modes when the plasma resistivity is increased. The effects of X-point geometry are assessed by comparing cross-separatrix simulations with counterpart calculations performed for a toroidal annulus geometry. For the simulation parameters considered, similar global behaviour is observed in both cases, whereas strong local suppression of turbulence fluctuations is demonstrated near the X-point for the case of a single-null geometry.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

High Mobility and Electrostatics in GeSn Quantum Wells With SiGeSn Barriers

GeSn is an emerging material with potential applications in next‐generation integrated optoelectronics and quantum information processing. While GeSn/SiGeSn quantum wells exhibit promising optical properties, their electrical transport characteristics and governing electrostatics in gated structures remain unexplored. Heterostructure field‐effect transistors are fabricated using GeSn/SiGeSn quantum wells and electronic transport properties of 2D holes are characterized. At 2 K, heterostructure field‐effect transistors with well/barrier compositions of Ge 0.945 Sn 0.055 /Si 0.03 Ge 0.93 Sn 0.04 and Ge 0.9 Sn 0.1 /Si 0.017 Ge 0.927 Sn 0.056 , show peak mobilities of 9000 and 19 000 cm 2 /Vs, respectively, the latter setting a record for the highest mobility reported for GeSn quantum wells with a Sn concentration around 6 % or greater. Remarkably, at low carrier densities, devices with a SiGeSn barrier exhibit mobilities several times higher than previously reported for GeSn quantum wells with a Ge barrier. This higher mobility contrasts with the expectation that alloy scattering from the barrier would reduce carrier mobility. Two mechanisms based on atom probe tomography data analyses are proposed: i) unintentionally improved SiGeSn/GeSn interface and/or ii) reduced alloy scattering from short‐range order. Significant current–voltage hysteresis is observed, with the effective threshold gate voltage shifting by more than 5 V, attributed to non‐equilibrium trapped charge at various interfaces within the SiGeSn heterostructure.

GeSn↗

Giant Superelastic Piezoelectricity in Flexible Ferroelectric BaTiO3 Membranes

Mechanical displacement in commonly used piezoelectric materials is typically restricted to linear or biaxial in nature and to a few percent of the material dimensions. Here in this paper, we show that free-standing BaTiO 3 membranes exhibit nonconventional electromechanical coupling. Under an external electric field, these superelastic membranes undergo controllable and reversible “sushi-rolling-like” 180° folding–unfolding cycles. This crease-free folding is mediated by charged ferroelectric domains, leading to giant >3.8 and 4.6 μm displacements for a 30 nm thick membrane at room temperature and 60 °C, respectively. Further increasing the electric field above the coercive value changes the fold curvature, hence augmenting the effective piezoresponse. Finally, it is found that the membranes fold with increasing temperature followed by complete immobility of the membrane above the Curie temperature, allowing us to model the ferroelectric domain origin of the effect.

36 MATERIALS SCIENCE↗

An antiferromagnetic diode effect in even-layered MnBi 2 Te 4

In a p–n junction, the separation of positive and negative charges leads to diode transport, in which charge flows in only one direction. Non-centrosymmetric polar conductors are intrinsic diodes that could be of use in the development of nonlinear applications. Such systems have recently been extended to non-centrosymmetric superconductors, and the superconducting diode effect has been observed. Here, in this paper, we report an antiferromagnetic diode effect in a centrosymmetric crystal without directional charge separation. We observed large second-harmonic transport in a nonlinear electronic device enabled by the compensated antiferromagnetic state of even-layered MnBi 2 Te 4 . We show that this antiferromagnetic diode effect can be used to create in-plane field-effect transistors and microwave-energy-harvesting devices. We also show that electrical sum-frequency generation can be used as a tool to detect nonlinear responses in quantum materials.

electronic properties and materials↗

Al-rich AlGaN high electron mobility transistor gate metallization study up to 600 °C in air

Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.

36 MATERIALS SCIENCE↗

Flexoinduced ferroelectricity in low-dimensional transition metal dichalcogenides

We developed a Landau-type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring the flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Additionally, performed calculations proved that the out-of-plane spontaneous polarization, originating from the flexoelectric effect in a rippled TMD, is bistable and reversible by a nonuniform electric field. In contrast, the spontaneous polarization induced by a misfit strain and symmetry-sensitive surface-induced piezoelectric coupling, cannot be reversed by an external electric field. Special attention is paid to the spectral analysis of the linear dielectric susceptibility and gain factor, which enhancement is critically important for the observation of the polar phenomena in low-dimensional TMDs by the surface-enhanced vibrational spectroscopy.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Bounds on Heavy Axions with an X-Ray Free Electron Laser

We present new exclusion bounds obtained at the European X-Ray Free Electron Laser facility (EuXFEL) on axionlike particles in the mass range 10 -3 eV ≲ m a ≲ 10 4 eV. Our experiment exploits the Primakoff effect via which photons can, in the presence of a strong external electric field, decay into axions, which then convert back into photons after passing through an opaque wall. While similar searches have been performed previously at a third-generation synchrotron [Yamaji et al., Phys. Lett. B 782, 523 (2018)], our work demonstrates improved sensitivity, exploiting the higher brightness of x-rays at EuXFEL.

47 OTHER INSTRUMENTATION↗

A chiral switchable photovoltaic ferroelectric 1D perovskite

Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(-)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI 3 . Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects

36 MATERIALS SCIENCE↗

A Quantum-mechanical Treatment of Electron Broadening in Strong Magnetic Fields

Abstract Spectral line-shape fitting is an extremely useful tool in determining the gravity of white dwarf stars. This method is so far limited to nonmagnetic white dwarfs largely because the theory of line broadening in high magnetic fields is not as complete as in the nonmagnetic case. Current Stark+Zeeman models treat plasma particles classically and ignore the motion of the nucleus. We develop the formalism for a quantum-mechanical treatment of the perturbing electrons and include the nuclear motion as part of the broadening and explore their relative importance. The conditions we explore are those found in white dwarf and neutron star atmospheres. We find that, contrary to previous studies, the quantized perturbing electrons create more broadening than perturbers on a straight-path trajectory. Additionally, the quantization of the plasma electrons gives rise to resonances away from the line center. The nuclear motion creates an additional electric field, which also leads to an increase in line broadening; however, this effect in neutron star atmospheres is not as large as previously estimated. This suggests that neutron star spectral lines are sensitive to density and that their mass and radius can be obtained from spectral line fitting, which would help constrain the neutron star equation of state.

79 ASTRONOMY AND ASTROPHYSICS↗

QED nuclear medium effects at EIC energies

Here, we present the first calculation of quantum electrodynamics (QED) nuclear medium effects under the experimental conditions of future Electron-Ion Collider (EIC) experiments. Our work offers numerical estimates, particularly in the context of inclusive deep inelastic scattering on a $^{208}_{82}$Pb nucleus. While prior studies have predominantly focused on elastic scattering, our investigation extends to the more complex scenarios of inelastic processes within a nuclear medium. Our findings suggest that the cross section corrections due to QED nuclear medium effects could be substantial, reaching or exceeding the level of experimental precision. This work further compares the effects of single rescattering events with those of multiple rescatterings, as particles travel the nuclear volume. We estimate the dominant source of the uncertainties associated with our formalism by varying the scale of the atomic physics where the screening of the electric field of the nucleus happens. This calculation not only contributes to the understanding of QED nuclear medium effects, but also offers a path to a more precise extraction of the process-independent nonperturbative structure of nuclei.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Efficient Broadband Terahertz Generation by Above‐Band‐Gap Excitation of the Pyroelectric ZnSnN 2

Terahertz (THz) radiation is a powerful probe of low-energy excitations in all phases of matter. However, it remains a challenge to find materials that efficiently generate THz radiation in a broad range of frequencies following optical excitation. Here, we investigate a pyroelectric material, ZnSnN 2 , and find that its above-band-gap excitation results in the efficient formation of an ultrafast photocurrent generating THz radiation. The resulting THz electric field spans a frequency range from below 1 THz to above 30 THz. The results suggest that the photocurrent is primarily driven by an ultrafast pyroelectric effect where the photo-excited carriers screen the spontaneous electric polarization of ZnSnN 2 . Strong structural disorder reduces the photocarrier lifetime significantly and, thus, enables broadband operation. ZnSnN2 shows a similar THz-emitter performance as the best spintronic THz emitters regarding bandwidth and amplitude. The study unveils the large potential of pyroelectric materials as efficient and broadband THz emitters with built-in bias fields.

36 MATERIALS SCIENCE↗

Towards a Next Generation Search for Time-Reversal Violation Using Optically Addressable Nuclei in Cryogenic Solids (Final Technical Report, September 2018 - August 2023)

Certain rare pear-shaped nuclei have unmatched sensitivity to new kinds of forces between subatomic particles that are not the same when the arrow of time is reversed. Such forces are believed to be responsible for the near absence of antimatter in the observable Universe. These rare isotopes, some for the first time, will be produced in large numbers at the Facility for Rare Isotope Beams currently under operating at Michigan State University providing an unprecedented opportunity to probe for new physics. In anticipation, we are using abundant isotopes to develop new techniques to manipulate nuclei embedded inside an optically transparent solid at cryogenic temperatures. Implantation into a solid, such as neon and argon, is potentially an effective way to both efficiently capture and repeatedly probe the small number of rare nuclei, such as radium and protactinium. An optically transparent host medium at cryogenic temperatures would allow for the laser manipulation of the nuclei in a thermally quiet and stable environment for a wide variety of guest species such as polar molecules. In such systems, the nuclei are exposed to extraordinarily large electric fields and magnetic field gradients, which significantly amplifies the measurability of certain time-reversal violating effects. The potential sensitivity of this new approach could be at least a few hundred times greater than the current leading experiment which uses stable mercury atoms. We report on the design considerations and preliminary performance of an instrument used to produce and implant molecules into a frozen argon solid.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Unveiling Spatial and Temporal Dynamics of Plasmon-Enhanced Localized Fields in Metallic Nanoframes through Ultrafast Electron Microscopy

Plasmonic nanomaterials, particularly noble metal nanoframes (NFs), are important for applications such as catalysis, biosensing, and energy harvesting due to their ability to enhance localized electric fields and atomic efficiency via localized surface plasmon resonance (LSPR). Yet the fundamental structure-function relationships and plasmonic dynamics of the NFS are difficult to study experimentally and thus far rely predominately on computational methodologies, limiting their utilization. This study leverages the capabilities of ultrafast electron microscopy (UEM), specifically photon-induced near-field electron microscopy (PINEM), to probe the light-matter interactions within plasmonic NF structures. Here, the effects of shape, size, and plasmonic coupling of Pt@Au core-shell NFs on spatial and temporal characteristics of plasmon-enhanced localized electric fields are explored. Importantly, time-resolved PINEM analysis reveals that the plasmonic fields around hexagonal NF prisms exhibit a spatially dependent excitation and decay rate, indicating a nuanced interplay between the spatial geometry of the NF and the temporal evolution of the localized electric field. These results and observations uncover nanophotonic energy transfer dynamics in NFs and highlight their potential for applications in biosensing and photocatalysis.

Plasmonics↗