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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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In this study, the reaction of Ph 3 PAuN 3 with 9-Ph-9-borafluorene resulted in complexation of the azide to boron while a gold acetylide reacted with 9-Ph-9-borafluorene to insert the acetylide carbon to access a six-membered boracycle with an exocyclic double bond.
Tungsten oxides undergo a significant increase in their hydrogen evolution reaction activity upon proton-insertion coupled electron transfer.
An energy storage concept using anions as charge carriers is explored based on solution-phase fluoride-ion insertion in periodic solids. Redox reactions are mediated by d-block centers, whereas Bi 3+ lone pairs enable reversible F-ion diffusion.
Electrochemical cycling of the VOPO 4 cathode in aqueous Zn-ion batteries proceeds via proton insertion, which is accompanied by the conformal coating of an amorphous ZnO layer on the electrode particles.
The CoFe thickness (t{sub CoFe}) dependence of spin injection efficiency was investigated for Co{sub 2}MnSi/CoFe/n-GaAs junctions. The ΔV{sub NL}/I value, which is a measure of spin injection efficiency, strongly depended on t{sub CoFe}, where ΔV{sub NL} is the amplitude of a nonlocal spin-valve signal, and I is an injection current. Importantly, the maximum value of ΔV{sub NL}/I for a Co{sub 2}MnSi/CoFe/n-GaAs junction was one order of magnitude higher than that for a CoFe/n-GaAs junction, indicating that a Co{sub 2}MnSi electrode works as a highly polarized spin source. No clear spin signal, on the other hand, was observed for a Co{sub 2}MnSi/n-GaAs junction due to diffusion of Mn atoms into the GaAs channel. Secondary ion mass spectrometry analysis indicated that the CoFe insertion effectively suppressed the diffusion of Mn into GaAs, resulting in improved spin injection properties compared with those for a Co{sub 2}MnSi/n-GaAs junction.
We present a comparative study for the electrochemical insertion of different cations into a nanostructured vanadium oxide material. The oxide is hydrothemally synthesized and electrically characterized by variable temperature measurements. The electrochemical reactions are performed in aqueous chloride solutions of lithium, sodium, potassium, and ammonium, and the electrochemical behavior of various cycles are correlated with visual changes in the vanadium oxide nanosheets as observed by scanning electron microscopy. We note an increase in the specific charge per cycle in the cases of sodium and ammonium ions only, correlated with minimal physical changes to the nanosheets. The differing behavior of the various ions has implications for their use in electrical energy storage applications.
The degradation of ferroelectric (FE) properties of atomic layer deposited Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films with increasing thickness was mitigated by inserting 1 nm-thick Al{sub 2}O{sub 3} interlayer at middle position of the thickness of the FE film. The large P{sub r} of 10 μC/cm{sup 2}, which is 11 times larger than that of single layer Hf{sub 0.5}Zr{sub 0.5}O{sub 2} film with equivalent thickness, was achieved from the films as thick as 40 nm. The Al{sub 2}O{sub 3} interlayer could interrupt the continual growth of Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films, and the resulting decrease of grain size prevented the formation of non-ferroelectric monoclinic phase. The Al{sub 2}O{sub 3} interlayer also largely decreased the leakage current of the Hf{sub 0.5}Zr{sub 0.5}O{sub 2} films.
In this paper, we have developed the kinetics of E-region ionospheric plasma comprising of fine dust grains and shown that the electron density in E-layer can purposely be reduced/enhanced up to desired level by inserting fine dust particles of appropriate physical/material properties; this may certainly be promising for preferred rf-signal processing through these layers. The analytical formulation is based on average charge theory and includes the number and energy balance of the plasma constituents along with charge balance over dust particles. The effect of varying number density, work function, and photo-efficiency of dust particles on ionospheric plasma density at different altitude in E-layer has been critically examined and presented graphically.
We report the longitudinal spin-Seebeck effects (LSSEs) for Pt/Fe{sub 70}Cu{sub 30}/BiY{sub 2}Fe{sub 5}O{sub 12} (BiYIG) and Pt/BiYIG devices. The LSSE voltage was found to be enhanced by inserting an ultra-thin Fe{sub 70}Cu{sub 30} interlayer. This enhancement decays sharply with increasing the Fe{sub 70}Cu{sub 30} thickness, suggesting that it is not due to bulk phenomena, such as a superposition of conventional thermoelectric effects, but due to interface effects related to the Fe{sub 70}Cu{sub 30} interlayer. Combined with control experiments using Pt/Fe{sub 70}Cu{sub 30} devices, we conclude that the enhancement of the LSSE voltage in the Pt/Fe{sub 70}Cu{sub 30}/BiYIG devices is attributed to the improvement of the spin-mixing conductance at the Pt/BiYIG interfaces.
Three non-destructive methodologies, namely, surface photovoltage (SPV), photoluminescence, and piezoelectric photothermal (PPT) spectroscopies, were adopted to detect the thermal carrier escape from quantum well (QW) and radiative and non-radiative carrier recombinations, respectively, in strain-balanced InGaAs/GaAsP multiple-quantum-well (MQW)-inserted GaAs p-i-n solar cell structure samples. Although the optical absorbance signal intensity was proportional to the number of QW stack, the signal intensities of the SPV and PPT methods decreased at high number of stack. To explain the temperature dependency of these signal intensities, we proposed a model that considers the three carrier dynamics: the thermal escape from the QW, and the non-radiative and radiative carrier recombinations within the QW. From the fitting procedures, it was estimated that the activation energies of the thermal escape ΔE{sub barr} and non-radiative recombination ΔE{sub NR} were 68 and 29 meV, respectively, for a 30-stacked MQW sample. The estimated ΔE{sub barr} value agreed well with the difference between the first electron subband and the top of the potential barrier in the conduction band. We found that ΔE{sub barr} remained constant at approximately 70 meV even with increasing QW stack number. However, the ΔE{sub NR} value monotonically increased with the increase in the number of stack. Since this implies that non-radiative recombination becomes improbable as the number of stack increases, we found that the radiative recombination probability for electrons photoexcited within the QW increased at a large number of QW stack. Additional processes of escaping and recapturing of carriers at neighboring QW were discussed. As a result, the combination of the three non-destructive methodologies provided us new insights for optimizing the MQW components to further improve the cell performance.
For Co{sub 2}Fe{sub 6}B{sub 2}/MgO-based perpendicular magnetic tunneling junctions spin valves with [Co/Pd]{sub n}-synthetic-antiferromagnetic (SyAF) layers, the tunneling-magneto-resistance (TMR) ratio strongly depends on the nanoscale Fe insertion-layer thickness (t{sub Fe}) between the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer and MgO tunneling barrier. The TMR ratio rapidly increased as t{sub Fe} increased up to 0.4 nm by improving the crystalline linearity of a MgO tunneling barrier and by suppressing the diffusion of Pd atoms from a [Co/Pd]{sub n}-SyAF. However, it abruptly decreased by further increasing t{sub Fe} in transferring interfacial-perpendicular magnetic anisotropy into the IMA characteristic of the Co{sub 2}Fe{sub 6}B{sub 2} pinned layer. Thus, the TMR ratio peaked at t{sub Fe} = 0.4 nm: i.e., 120% at 29 Ωμm{sup 2}.
High performance improvement (+88% in peak G{sub m} and >30% in linear and saturation region drain currents) was observed for N-MOSFETs with Oxygen-Inserted (OI) Si channel. From TCAD analysis of the C-V measurement data, the improvement was confirmed to be due to electron mobility enhancement of the OI Si channel (+75% at N{sub inv} = 4.0 × 10{sup 12} cm{sup −2} and +25% at N{sub inv} = 8.0 × 10{sup 12} cm{sup −2}). Raman and high-resolution Rutherford backscattering measurements confirmed that negligible strain is induced in the OI Si layer, and hence, it cannot be used to explain the origin of mobility improvement. Poisson-Schrödinger based quantum mechanical simulation was performed, taking into account phonon, surface roughness and Coulomb scatterings. The OI layer was modeled as a “quasi barrier” region with reference to the Si conduction band edge to confine inversion electrons. Simulation explains the measured electron mobility enhancement as the confinement effect of inversion electrons while the formation of an super-steep retrograde well doping profile in the channel (as a result of dopant diffusion blocking effect accompanied by introduction of the OI layer) also contributes 50%–60% of the mobility improvement.
In order to improve the electrical behaviour of metal-insulator-metal capacitors with ZrO{sub 2} insulator grown by Atomic Layer Deposition, the influence of the insertion of interfacial Cr layers between Pt electrodes and the zirconia is investigated. An improvement of the α-voltage coefficient of capacitance as low as 567 ppm/V{sup 2} is achieved for a single layer of Cr while maintaining a high capacitance density of 10.7 fF/μm{sup 2} and a leakage current of less than 1.2 × 10{sup −8} A/cm{sup 2} at +1 V. The role of the interface is discussed by means of X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy showing the formation of Zr stabilized chromia oxide phase with a dielectric constant of 16.
A thin potassium stearate (KSt) film combined with an optimized ZnO film was introduced to improve the fill factor (FF) of highly efficient inverted polymer solar cells (PSCs). Atomic force microscopy and contact angle measurements were used to show that the introduction of KSt did not change the morphology of interlayer. On the contrary, it is beneficial for the spread of the active layer on the interlayer. The origin of enhanced FF was systematically studied by the ideal current-voltage model for a single heterojunction solar cell and electrochemical impedance spectroscopy. On the basis of the data analysis, the reduced charge recombination loss was responsible for this improved FF. At last, when KSt was replaced by sodium stearate (NaSt), the similar experiment phenomenon was observed. This indicates that inserting a metallic stearate modified layer is a promising strategy to enhance inverted PSCs performance.
Shielding the bias applied to the probe by the sheath formed around it and determination of parameters of unperturbed plasmas are in the basis of the probe diagnostics. The results from a two-dimensional model of a discharge with a probe inserted in it show that the probe influences the spatial distribution of the plasma parameters in the entire discharge. The increase (although slight) in the electron temperature, due to the increased losses of charged particles on the additional wall in the discharge (mainly the probe holder), leads to redistribution of the plasma density and plasma potential, as shown by the results obtained at the floating potential of the probe. The deviations due to the bias applied to the probe tip are stronger in the ion saturation region of the probe characteristics. The pattern of the spatial redistribution of the plasma parameters advances together with the movement of the probe deeper in the discharge. Although probe sheaths and probe characteristics resulting from the model are shown, the study does not aim at discussions on the theories for determination of the plasma density from the ion saturation current. Regardless of the modifications in the plasma behavior in the entire discharge, the deviations of the plasma parameters at the position of the probe tip and, respectively, the uncertainty which should be added as an error when the accuracy of the probe diagnostics is estimated do not exceed 10%. Consequently, the electron density and temperature obtained, respectively, at the position of the plasma potential on the probe characteristics and from its transition region are in reasonable agreement with the results from the model of the discharge without a probe. Being in the scope of research on a source of negative hydrogen ions with the design of a matrix of small radius inductive discharges, the model is specified for a low-pressure hydrogen discharge sustained in a small-radius tube.
This study examined the electrical performance of bilayer channel InGaZnO:H/InGaZnO thin-film transistors (TFTs). The field-effect mobility and bias stress stability of the InGaZnO device were improved by inserting the hydrogenated InGaZnO ultrathin layer compared to the pure InGaZnO single channel layer device. As a consequence, a high field-effect mobility of 55.3 cm{sup 2}/V s, a high on/off current ratio of 10{sup 8}, a threshold voltage of 0.7 V, and a small sub-threshold swing of 0.18 V/decade have been achieved. The X-ray photoelectron spectroscopy and low-frequency noise analysis suggest that these desirable properties should be attributed to the ultrathin InGaZnO:H layer, which could provide suitable carrier concentration and reduce the average trap density near the channel and insulator layer interface. Meanwhile, the channel conductance of the bilayer device is controlled by thick InGaZnO layer through formation barrier energy for electron transport at the interface of InGaZnO:H and InGaZnO layer. These improved electrical properties have represented a great step towards the achievement of transparent, high performances, and low-cost metal oxide TFTs.
National Synchrotron Light Source-II (NSLS-II) is the latest storage ring of 3 GeV energy at the Brookhaven National Laboratory (BNL). The horizontal emittance of the electron beam with the currently installed six damping wigglers is 0.9 nm.rad, which could be further reduced to 0.5 nm.rad with more insertion devices (IDs). With only one RF cavity the beam current is restricted to 200 mA. Five hundred mA operation is envisaged for next year with an addition of the second cavity. Six (plus two branches) beamlines have been commissioned in the initial phase of the project. In July 2015, three NIH funded beamlines called “Advanced Beamlines for Biological Investigations with X-rays” (ABBIX) will be added for operation. This paper describes the experiences of ID development, installation, and commissioning for the NSLS-II project as well as our future plans to improve the performance of the facility in terms of source development.
DESY presently operates 14 independent insertion device (ID) beamlines at its 6 GeV storage ring PETRA III. Besides the 2 m long standard undulators U29 and U32, several special IDs of up to 5 m length have been installed to meet the experimental requests for high energy X-rays, elliptically polarized light, and a higher degree of coherence. Two additional half octants of the ring have recently been reconstructed, in order to extend the experimental capabilities at PETRA III. The straight sections also allow for installation of IDs of 2 m or 5 m length. This article gives an overview of the ID key parameters, the spectral properties and the brilliance of the current undulators installed at PETRA III. It also presents the characteristics of some of the upcoming special IDs, like in-vacuum and short undulators.