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At least 433 records · Page 24

Kinetic control of phase evolution and defect-mediated recombination in AACVD-grown copper antimony sulphide thin films

Copper antimony sulphide (CAS) is a multinary chalcogenide semiconductor in which small deviations from stoichiometry can drive phase competition and strong defect-mediated modulation of optoelectronic properties. However, the systematic roles of copper precursor fraction and deposition time in governing phase evolution, off-stoichiometry, and recombination dynamics in aerosol-assisted chemical vapour deposition (AACVD)-grown undoped CAS thin films remain insufficiently understood. In this work, undoped CAS thin films were deposited by AACVD using Cu(dedtc)2 and Sb(dedtc)3 single-source precursors at 550 °C and a carrier gas flow rate of 150 sccm, while the Cu(dedtc)2 mole fraction (x = 0.15 – 0.55) and deposition time (1 – 2 hours) were systematically varied to probe how growth kinetics influence phase composition, microstructure, and defect-mediated optical properties without post-deposition annealing or extrinsic doping. Increasing copper precursor content drives phase evolution toward tetrahedrite-dominant CAS films at intermediate Cu(dedtc)2 mole fractions, with the film deposited at x = 0.35 exhibiting the strongest tetrahedrite character within the parameter space examined. The films are also copper-rich, antimony-poor, and sulphur-deficient, consistent with off-stoichiometric growth and intrinsic defect formation, plausibly including copper interstitials, Cu-on-Sb antisites, and sulphur vacancies. These growth-dependent compositional deviations are accompanied by tunable indirect optical bandgaps of approximately 1.60 – 2.18 eV and weak visible photoluminescence governed by defect-mediated recombination. Time-resolved photoluminescence reveals bi-exponential decay behaviour with lifetimes of approximately 0.1 – 3.6 ns, with emission dominated by slower donor–acceptor pair recombination and a smaller contribution from faster trap-assisted pathways. Collectively, these results establish an explicit kinetic process–structure–defect–property relationship for AACVD-grown CAS thin films and provide a growth–structure–property framework relevant to future optimization of CAS-based optoelectronic and energy materials.

36 MATERIALS SCIENCE↗

NASA Tech Briefs, October 2008

Topics covered include: Control Architecture for Robotic Agent Command and Sensing; Algorithm for Wavefront Sensing Using an Extended Scene; CO2 Sensors Based on Nanocrystalline SnO2 Doped with CuO; Improved Airborne System for Sensing Wildfires; VHF Wide-Band, Dual-Polarization Microstrip-Patch Antenna; Onboard Data Processor for Change-Detection Radar Imaging; Using LDPC Code Constraints to Aid Recovery of Symbol Timing; System for Measuring Flexing of a Large Spaceborne Structure; Integrated Formation Optical Communication and Estimation System; Making Superconducting Welds between Superconducting Wires; Method for Thermal Spraying of Coatings Using Resonant-Pulsed Combustion; Coating Reduces Ice Adhesion; Hybrid Multifoil Aerogel Thermal Insulation; SHINE Virtual Machine Model for In-flight Updates of Critical Mission Software; Mars Image Collection Mosaic Builder; Providing Internet Access to High-Resolution Mars Images; Providing Internet Access to High-Resolution Lunar Images; Expressions Module for the Satellite Orbit Analysis Program Virtual Satellite; Small-Body Extensions for the Satellite Orbit Analysis Program (SOAP); Scripting Module for the Satellite Orbit Analysis Program (SOAP); XML-Based SHINE Knowledge Base Interchange Language; Core Technical Capability Laboratory Management System; MRO SOW Daily Script; Tool for Inspecting Alignment of Twinaxial Connectors; An ATP System for Deep-Space Optical Communication; Polar Traverse Rover Instrument; Expert System Control of Plant Growth in an Enclosed Space; Detecting Phycocyanin-Pigmented Microbes in Reflected Light; DMAC and NMP as Electrolyte Additives for Li-Ion Cells; Mass Spectrometer Containing Multiple Fixed Collectors; Waveguide Harmonic Generator for the SIM; Whispering Gallery Mode Resonator with Orthogonally Reconfigurable Filter Function; Stable Calibration of Raman Lidar Water-Vapor Measurements; Bimaterial Thermal Compensators for WGM Resonators; Root Source Analysis/ValuStream[Trade Mark] - A Methodology for Identifying and Managing Risks; Ensemble: an Architecture for Mission-Operations Software; Object Recognition Using Feature-and Color-Based Methods; On-Orbit Multi-Field Wavefront Control with a Kalman Filter; and The Interplanetary Overlay Networking Protocol Accelerator.

Source record↗

Epitaxial strain modulated electronic properties of interface controlled nickelate superlattices

For this study, perovskite nickelate heterostructures consisting of single unit cells of EuNiO 3 and LaNiO 3 have been grown on a set of single crystalline substrates by pulsed laser interval deposition to investigate the effect of epitaxial strain on electronic and magnetic properties at the extreme interface limit. Despite the variation of substrate in-plane lattice constants and lattice symmetry, the structural response to heterostructuring is primarily controlled by the presence of the EuNiO 3 layer. In sharp contrast to bulk LaNiO 3 or EuNiO 3 , the superlattices grown under tensile strains exhibit metal-to-insulator transitions (MIT) below room temperature. The onset of magnetic and electronic transitions associated with the MIT can be further separated by application of large tensile strain. Furthermore, these transitions can be entirely suppressed by very small compressive strain. X-ray resonant absorption spectroscopy measurements reveal that such strain-controlled MIT is directly linked to a strain-induced self-doping effect without any chemical doping.

36 MATERIALS SCIENCE↗

Modeling of Gate Bias Modulation in Carbon Nanotube Field-Effect-Transistors

The threshold voltages of a carbon nanotube (CNT) field-effect transistor (FET) are derived and compared with those of the metal oxide-semiconductor (MOS) FETs. The CNT channel is so thin that there is no voltage drop perpendicular to the gate electrode plane, which is the CNT diameter direction, and this makes the CNTFET characteristics quite different from those in MOSFETs. The relation between the voltage and the electrochemical potentials, and the mass action law for electrons and holes are examined in the context of CNTs, and it is shown that the familiar relations are still valid because of the macroscopic number of states available in the CNTs. This is in sharp contrast to the cases of quantum dots. Using these relations, we derive an inversion threshold voltage V(sub Ti) and an accumulation threshold voltage V(sub Ta) as a function of the Fermi level E(sub F) in the channel, where E(sub F) is a measure of channel doping. V(sub Ti) of the CNTFETs has a much stronger dependence than that of MOSFETs, while V(sub Ta)s of both CNTFETs and MOSFETs depend quite weakly on E(sub F) with the same functional form. This means the transition from normally-off mode to normally-on mode is much sharper in CNTFETs as the doping increases, and this property has to be taken into account in circuit design.

Yamada, Toshishige↗

Highly efficient and stable p-type ZnO nanowires with piezotronic effect for photoelectrochemical water splitting

Unremitting efforts have been made to develop high-performance photoelectrochemical (PEC) water-splitting system to produce clean hydrogen fuel using sunlight. In this research, a novel way, combining highly-ordered nanowires (NWs) structure and piezotronic effect of p-type ZnO has been demonstrated to dramatically enhance PEC hydrogen evolution performance. Systematic characterizations indicate that the Sb atoms uniformly dope into ZnO NWs and substitute Zn sites with the introduction of two zinc vacancies to form the shallow acceptor Sb Zn –2V Zn complex. Detailed synchrotron-based X-ray absorption near-edge structure (XANES) experiments in O K-edge and Zn L-edge further confirm the formation of the complex, and theoretical calculation verifies the Sb 5+ state dominating the complex. The optimal photocurrent density of the 0.2Sb/ZnO-anneal NWs can reach –0.85 mA/cm 2 (0 V RHE ) which is 17.2 times larger than that of the n-ZnO NWs under sunlight illumination (100 mW/cm 2 ). Furthermore, the piezotronic effect can be introduced to regulate the charge separation and transfer in the ZnO NWs through modulating the band structure near the interface. The photocurrent density can further increase to –1.08 mA/cm 2 (0 V RHE ) under a 0.6% tensile strain, which is 27.4% enhancement with respect to the ZnO sample without strain. These conclusions provide an efficient way to design and develop high-performance photoelectrodes toward PEC hydrogen evolution.

08 HYDROGEN↗

A high pressure modulated molecular beam mass spectrometric sampling system

The current state of understanding of free-jet high pressure sampling is critically reviewed and modifications of certain theoretical and empirical considerations are presented. A high pressure, free-jet expansion, modulated molecular beam, mass spectrometric sampling apparatus was constructed and this apparatus is described in detail. Experimental studies have demonstrated that the apparatus can be used to sample high temperature systems at pressures up to one atmosphere. Condensible high temperature gaseous species have been routinely sampled and the mass spectrometric detector has provided direct identification of sampled species. System sensitivity is better than one tenth of a part per million. Experimental results obtained with argon and nitrogen beams are presented and compared to theoretical predictions. These results and the respective comparison are taken to indicate acceptable performance of the sampling apparatus. Results are also given for two groups of experiments related to hot corrosion studies. The formation of gaseous sodium sulfate in doped methane-oxygen flames was characterized and the oxidative vaporization of metals was studied in an atmospheric pressure flowing gas system to which gaseous salt partial pressures were added.

Stearns, C. A.↗

Evidence of pair-density wave in spin-valley locked systems

Cooper pairs with a finite center-of-mass momentum form a remarkable state in which the superconducting order parameter is modulated periodically in space. Although intense interest in such a “pair-density wave” (PDW) state has emerged due to recent discoveries in high $T_c$ superconductors, there is little theoretical understanding of the mechanism driving this exotic state. The challenge is that many competing states lie close in energy in seemingly simple models, such as the Hubbard model, in the strongly correlated regime. Here, we show that inversion symmetry breaking and the resulting spin-valley locking can promote PDWs over more commonly found spin stripes through frustration against magnetic order. Specifically, we find the first robust evidence for a PDW within density matrix renormalization group simulation of a simple fermionic model. Our results point to a tantalizing possibility in hole-doped group VI transition metal dichalcogenides, with spin-valley locked band structure and moderate correlations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A Thermal Radiation Modulation Platform by Emissivity Engineering with Graded Metal–Insulator Transition

Thermal radiation from a black body increases with the fourth power of absolute temperature (T 4 ), an effect known as the Stefan-Boltzmann law. Typical materials radiate heat at a portion of this limit, where the portion, called integrated emissivity (ε int ), is insensitive to temperature (|dε int /dT| ≈ 10 -4 °C -1 ). The resultant radiance bound by the T 4 law limits the ability to regulate radiative heat. Here, an unusual material platform is shown in which ε int can be engineered to decrease in an arbitrary manner near room temperature (|dε int /dT| ≈ 8 × 10 -3 °C -1 ), enabling unprecedented manipulation of infrared radiation. As an example, ε int is programmed to vary with temperature as the inverse of T 4 , precisely counteracting the T 4 dependence; hence, thermal radiance from the surface becomes temperature-independent, allowing the fabrication of flexible and power-free infrared camouflage with unique advantage in performance stability. In this work, the structure is based on thin films of tungsten-doped vanadium dioxide where the tungsten fraction is judiciously graded across a thickness less than the skin depth of electromagnetic screening.

36 MATERIALS SCIENCE↗

Developing quantitative capabilities for a scanning microwave impedance microscope

Currently no instrument exists to quantitatively measure electrical properties (dielectric constant and conductivity) on sub-micron regions, a capability of extreme importance to measure the functioning of sub-micron structures and devices. In particular, such electrical measurements could support the development and manufacture of advanced energy related materials used in technologies such as photovoltaic cells, fuel cells and advanced batteries, thereby increasing performance and/or lowering production costs. The goal of this project is to develop microwave imaging add-on modules and probes capable of quantitatively measuring the electrical properties of small regions of a material using microwaves. These modules for scanning probe microscopes, such as atomic force microscopes, make use of the near-field interaction between the exciting microwaves and a material and can resolve regions 10 nanometers in size (less than a million atoms) with little perturbation of the material. In Phase 1 commercial probes and modified hardware were used to establish the feasibility of using microwave imaging systems to quantify local permittivity and conductivity. Repeatable measurements that vary in a systematic way with electrical parameters were obtained from a variety of samples. In Phase 2 research prototypes of the needed hardware and probes were developed and their performance against test structures and real-world samples was demonstrated. Result of this research project include demonstration of quantification of both permittivity and doping level at precisions up to 10% using multiple technical approaches. The level of performance and ease of use meets market expectations and the technology and protocols researched under this grant are currently being commercialized. Quantitative capabilities of this sort will provide a key capability to energy related technologies, and to a wide variety of semiconductor, biological, and materials science applications. Applications include both materials research in academic and industrial labs, as well as manufacturing applications. In a manufacturing environment the quantitative measurement and imaging capabilities could be used both as metrology for process control and as a tool for failure analysis and yield improvement.

36 MATERIALS SCIENCE↗

Electronic Spin Qubit Candidates Arrayed within Layered Two-Dimensional Polymers

Molecular electronic spin qubits are promising candidates for quantum information science applications because they can be reliably produced and engineered via chemical design. Embedding electronic spin qubits within two-dimensional polymers (2DPs) offers the possibility to systematically engineer inter-qubit interactions while maintaining long coherence times, both of which are prerequisites to their technological utility. Here, we introduce electronic spin qubits into a diamagnetic 2DP by n-doping naphthalene diimide subunits with varying amounts of CoCp 2 and analyze their spin densities by quantitative electronic paramagnetic resonance spectroscopy. Low spin densities (e.g., 6.0 × 10 12 spins mm –3 ) enable lengthy spin–lattice (T 1 ) and spin–spin relaxation (T 2 ) times across a range of temperatures, ranging from T 1 values of 164 ms at 10 K to 30.2 μs at 296 K and T 2 values of 2.36 μs at 10 K to 0.49 μs at 296 K for the lowest spin density sample examined. Higher spin densities and temperatures were both found to diminish T 1 times, which we attribute to detrimental cross-relaxation from spin–spin dipolar interactions and spin–phonon coupling, respectively. Higher spin densities decreased T 2 times and modulated the T 2 temperature dependence. Here, we attribute these differences to the competition between hyperfine and dipolar interactions for electron spin decoherence, with the dominant interaction transitioning from the former to the latter as spin density and temperature increase. Overall, this investigation demonstrates that dispersing electronic spin qubits within layered 2DPs enables chemical control of their inter-qubit interactions and spin decoherence times.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Giant electron–phonon coupling of the breathing plane oxygen phonons in the dynamic stripe phase of $\hbox {La}_{1.67}\hbox {Sr}_{0.33}\hbox {NiO}_4$

Doped antiferromagnets host a vast array of physical properties and learning how to control them is one of the biggest challenges of condensed matter physics. La 1.67 Sr 0.33 NiO 4 (LSNO) is a classic example of such a material. At low temperatures holes introduced via substitution of La by Sr segregate into lines to form boundaries between magnetically ordered domains in the form of stripes. The stripes become dynamic at high temperatures, but LSNO remains insulating presumably because an interplay between magnetic correlations and electron–phonon coupling localizes charge carriers. Magnetic degrees of freedom have been extensively investigated in this system, but phonons are almost completely unexplored. We searched for electron–phonon anomalies in LSNO by inelastic neutron scattering. Giant renormalization of plane Ni–O bond-stretching modes that modulate the volume around Ni appears on entering the dynamic charge stripe phase. Other phonons are a lot less sensitive to stripe melting. Dramatic overdamping of the breathing modes indicates that dynamic stripe phase may host small polarons. We argue that this feature sets electron–phonon coupling in nickelates apart from that in cuprates where breathing phonons are not overdamped and point out remarkable similarities with the colossal magnetoresistance manganites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA Tech Briefs, February 2007

Topics covered include: Calibration Test Set for a Phase-Comparison Digital Tracker; Wireless Acoustic Measurement System; Spiral Orbit Tribometer; Arrays of Miniature Microphones for Aeroacoustic Testing; Predicting Rocket or Jet Noise in Real Time; Computational Workbench for Multibody Dynamics; High-Power, High-Efficiency Ka-Band Space Traveling-Wave Tube; Gratings and Random Reflectors for Near-Infrared PIN Diodes; Optically Transparent Split-Ring Antennas for 1 to 10 GHz; Ice-Penetrating Robot for Scientific Exploration; Power-Amplifier Module for 145 to 165 GHz; Aerial Videography From Locally Launched Rockets; SiC Multi-Chip Power Modules as Power-System Building Blocks; Automated Design of Restraint Layer of an Inflatable Vessel; TMS for Instantiating a Knowledge Base With Incomplete Data; Simulating Flights of Future Launch Vehicles and Spacecraft; Control Code for Bearingless Switched- Reluctance Motor; Machine Aided Indexing and the NASA Thesaurus; Arbitrating Control of Control and Display Units; Web-Based Software for Managing Research; Driver Code for Adaptive Optics; Ceramic Paste for Patching High-Temperature Insulation; Fabrication of Polyimide-Matrix/Carbon and Boron-Fiber Tape; Protective Skins for Aerogel Monoliths; Code Assesses Risks Posed by Meteoroids and Orbital Debris; Asymmetric Bulkheads for Cylindrical Pressure Vessels; Self-Regulating Water-Separator System for Fuel Cells; Self-Advancing Step-Tap Drills; Array of Bolometers for Submillimeter- Wavelength Operation; Delta-Doped CCDs as Detector Arrays in Mass Spectrometers; Arrays of Bundles of Carbon Nanotubes as Field Emitters; Staggering Inflation To Stabilize Attitude of a Solar Sail; and Bare Conductive Tether for Decelerating a Spacecraft.

Source record↗

To Substitute Rather Than Intercalate: Chimie douce Approach to Induce Ferromagnetism in Metastable Pt 0.8 M 0.2 Se 2 ( M = Cr, Co, Ni)

Two-dimensional (2D) magnetic materials with exotic magnetic properties have garnered significant interest due to their potential applications in spintronics and data storage technologies. However, the limited availability of intrinsic 2D magnetic materials has driven efforts to induce and manipulate magnetism in otherwise nonmagnetic 2D systems through approaches such as chemical intercalation, defect engineering, and substitutional doping. Herein, we present a facile, chimie douce method for incorporating 3d transition metals (Cr, Co, and Ni) into the nonmagnetic PtSe 2 sublattice. This synthetic approach enables control over layer thickness of Pt 1–x M x Se 2 (M = Cr, Co, Ni) nanosheets by varying the M identity and annealing conditions. Comprehensive scattering and spectroscopic characterizations confirm the successful and homogeneous substitution of M atoms at the Pt site, rather than intercalation, and reveal a strong correlation between nanosheet thickness and the identity of the substituting metal. High-temperature annealing of the nanosheets promotes an irreversible transformation toward the bulk phase, allowing for detailed characterization of structural and magnetic properties. A case study of Pt 0.8 Cr 0.2 Se 2 reveals that nanosheet thickness plays a critical role in modulating local magnetic interactions. While Cr atoms in the as-synthesized few-layers-thick nanosheets exhibit predominantly short-range antiferromagnetic interactions, the emergence of short-range ferromagnetic exchange is revealed in the bulk material. Detailed ac susceptibility and remanent magnetization measurements further demonstrate that bulk Pt 0.8 Cr 0.2 Se 2 adopts a frustrated magnetic ground state with clear signatures of ferromagnetic cluster-glass behavior. The systematic investigation presented herein establishes a clear and robust protocol for the synthesis and in-depth characterization of 2D transition-metal-substituted PtSe2 materials with varying layer thickness and paves a path toward their realization in spintronic and magnetic device applications.

crystallinity↗

Soft phonon modes from off-center Ge atoms lead to ultralow thermal conductivity and superior thermoelectric performance in n-type PbSe–GeSe

Historically PbSe has underperformed PbTe in thermoelectric efficiency and has been regarded as an inferior relative to its telluride congener. However, the fifty-fold greater natural abundance of Se relative to Te makes PbSe appealing as a thermoelectric material. We report that the n-type GeSe-alloyed PbSe system achieves a peak figure of merit, ZT, of ~1.54 at 773 K and maintains ZT values above 1.2 over a broad temperature range from 623 K to 923 K. The highest performing composition is Sb-doped PbSe–12%GeSe, which exhibits an ultralow lattice thermal conductivity of ~0.36 W m –1 K –1 at 573 K, close to the limit of amorphous PbSe. Theoretical studies reveal that the alloyed Ge 2+ atoms prefer to stay at off-center lattice positions, inducing low frequency modes. The Ge atoms also cause the unexpected behavior where the next nearest atom neighbors (6 Pb atoms) oscillate at lower frequencies than in pure PbSe leading to a large reduction of the Debye temperature and acoustic phonon velocity. The Pb 0.9955 Sb 0.0045 Se–12%GeSe system also shows Ge-rich precipitates and many aligned dislocations within its microstructure which also contribute to phonon scattering. The resultant average ZT (ZT avg ), a broad measure of the material's potential for functional thermoelectric modules, is 1.06 from 400 K to 800 K, the highest among all previously reported n- and p-type PbSe. Furthermore, this value matches or exceeds even those of the best n-type PbTe-based thermoelectric materials.

36 MATERIALS SCIENCE↗

High-bandwidth frequency domain multiplexed readout of transition-edge sensors for neutrinoless double beta decay searches

The next-generation of cryogenic neutrinoless double-beta decay experiments require increasingly fast readout in order to improve background discrimination. These experiments, operated as cryogenic calorimeters at ∼ 10 mK, are usually read out by high-impedance neutron transmutation doped (NTD) thermistors, which provide good energy resolution, but are limited by ∼ 1 ms response times. Superconducting detectors, such as transition-edge sensors (TESs) with a time resolution of ∼ 100 μs, offer superior timing performance over NTD semiconductor bolometers. To make this technology viable for an application to a thousand or more channels, multiplexed readout is necessary in order to minimize the thermal load and radioactive contamination induced by the readout. Frequency-domain multiplexing readout (fMUX) for TESs, previously developed at Berkeley Lab and McGill University, is currently in use for mm-wave telescopes with detector sampling rates in the order of 100 Hz. We demonstrate a new readout system, based on the McGill/Berkeley digital fMux readout, to satisfy the higher bandwidth and noise requirements of the next generation of TES-instrumented cryogenic calorimeters. Each multiplexing readout module comprises 10 superconducting resonators in the 1–5 MHz range and a DC superconducting quantum interference device (DC-SQUID), interfaced to high-speed field programmable gate array (FPGA)-based electronics for digital signal processing and low-latency SQUID feedback. The new readout samples detectors at 156 kHz, three orders of magnitude faster than its cosmology-oriented predecessor, and demonstrates a stable feedback bandwidth of 3 kHz in a real TES-based system.

47 OTHER INSTRUMENTATION↗

Measuring a Fiber-Optic Delay Line Using a Mode-Locked Laser

The figure schematically depicts a laboratory setup for determining the optical length of a fiber-optic delay line at a precision greater than that obtainable by use of optical time-domain reflectometry or of mechanical measurement of length during the delay-line-winding process. In this setup, the delay line becomes part of the resonant optical cavity that governs the frequency of oscillation of a mode-locked laser. The length can then be determined from frequency-domain measurements, as described below. The laboratory setup is basically an all-fiber ring laser in which the delay line constitutes part of the ring. Another part of the ring - the laser gain medium - is an erbium-doped fiber amplifier pumped by a diode laser at a wavelength of 980 nm. The loop also includes an optical isolator, two polarization controllers, and a polarizing beam splitter. The optical isolator enforces unidirectional lasing. The polarization beam splitter allows light in only one polarization mode to pass through the ring; light in the orthogonal polarization mode is rejected from the ring and utilized as a diagnostic output, which is fed to an optical spectrum analyzer and a photodetector. The photodetector output is fed to a radio-frequency spectrum analyzer and an oscilloscope. The fiber ring laser can generate continuous-wave radiation in non-mode-locked operation or ultrashort optical pulses in mode-locked operation. The mode-locked operation exhibited by this ring is said to be passive in the sense that no electro-optical modulator or other active optical component is used to achieve it. Passive mode locking is achieved by exploiting optical nonlinearity of passive components in such a manner as to obtain ultra-short optical pulses. In this setup, the particular nonlinear optical property exploited to achieve passive mode locking is nonlinear polarization rotation. This or any ring laser can support oscillation in multiple modes as long as sufficient gain is present to overcome losses in the ring. When mode locking is achieved, oscillation occurs in all the modes having the same phase and same polarization. The frequency interval between modes, often denoted the free spectral range (FSR), is given by c/nL, where c is the speed of light in vacuum, n is the effective index of refraction of the fiber, and L is the total length of optical path around the ring. Therefore, the length of the fiber-optic delay line, as part of the length around the ring, can be calculated from the FSRs measured with and without the delay line incorporated into the ring. For this purpose, the FSR measurements are made by use of the optical and radio-frequency spectrum analyzers. In experimentation on a 10-km-long fiber-optic delay line, it was found that this setup made it possible to measure the length to within a fractional error of about 3 10(exp -6), corresponding to a length error of 3 cm. In contrast, measurements by optical time-domain reflectometry and mechanical measurement were found to be much less precise: For optical time-domain reflectometry, the fractional error was found no less than 10(exp -4) (corresponding to a length error of 1 m) and for mechanical measurement, the fractional error was found to be about 10(exp -2) (corresponding to a length error of 100 m).

Tu, Meirong↗

Measurement of Microscopic Growth Rates in Float-Zone Silicon Crystals

Time dependent convective flows during crystal growth of doped semiconductors lead to fluctuations of the composition, so called dopant striations. In general, it is difficult to decide which is the main mechanism for the generation of these striations, it might be either the fluctuation of the concentration field in the melt and the extent of the solute boundary layer ahead of the solid-liquid interface or a variation of the growth velocity. Direct access to the concentration field is rather complicated to achieve, especially considering the high process temperature and the chemical activity of liquid silicon. The contribution of growth rate fluctuations to the formation of compositional fluctuations can be determined by measuring microscopic growth rates. The classical method of current pulses requires electrical feed-throughs and good electrical contacts, both are critical issues for the growth of high purity silicon crystals. Using a radiation based heating system, the heating power can be modulated very fast and effectively. We added to the normal heater power a sinusoidal off-set in the frequency range of 1 to 10 Hz, generating a narrow spaced weak rippling in the grown crystals which are superposed to the dopant striations caused by natural and by thermocapillary convection. The pulling speed was varied between 1 and 4mm/min. The microscope images of etched crystals slices have been analyzed by peak-search algorithms (measuring the spacing between each artificially induced marker) and by FFT. Performing growth experiments under a time-dependent flow regime, fluctuations of the microscopic growth velocity of Delta(v)/v(sub average) up to 50% have been measured. Damping the time-dependent convection by the use of an axial, static magnetic field of 500mT, the microscopic growth rate became constant within the resolution limit of this method. The results will be discussed using analytical methods for the calculation of microscopic growth velocity and by comparing them with measurements of temperature fluctuations in the melt during growth experiments itself.

Dold, P.↗

Electrochromic Properties of Perovskite NdNiO 3 Thin Films for Smart Windows

Semiconductors with electrically tunable band gaps are of great interest in controlling transparency to electromagnetic radiation. Thin films of perovskite nickelate NdNiO 3 (NNO), a class of correlated oxides, were deposited on single-crystal (LaAlO 3 (LAO)) and polycrystalline (fluorine-doped tin oxide-coated glass (FTO)) substrates by magnetron sputtering, chemical solution deposition (CSD), and atomic layer deposition (ALD). Their electrochromic behaviors were investigated using a three-electrode setup in basic (KOH solution, pH = 12) electrolyte. During bleaching/coloration process, the proton intercalation/deintercalation and simultaneous electron compensation in the NNO lattice under electrical bias led to crossover of the material between the pristine-conducting phase (Ni 3+ ) and the strongly correlated insulating phase (Ni 2+ ), which serves as the working principle for electrochromic (tunable opacity in the visible range) behavior. Cyclic voltammetry (CV) scans demonstrate that NNO films are electrochemically stable in basic solutions for all three film deposition methods explored here. CV scans at varying rates enabled the extraction of diffusion coefficient of protons in thin film NNO, which is similar to 10 –7 cm 2 s –1 among all films studied. Large light transmittance modulation by bleaching and coloration was observed on films grown on both LAO and FTO substrates, suggesting its potential as an electrochromic material candidate for smart windows and optical shutter applications. Here, porous NNO films obtained by chemical solution deposition tend to demonstrate stronger electrochromic activity than dense films grown by sputtering or ALD.

36 MATERIALS SCIENCE↗