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Inherent or "natural" device capacitance exploited. Band-Pass Circuit has input impedance of equivalent circuit at frequencies much greater than operational-amplifier rolloff frequency. Apparent inductance and capacitance arise from combined effects of feedback and reactive component of amplifier gain in frequency range.
Differencing circuit cancels error caused by switching transistors capacitance. In integrate and hold circuit using JFET switch, gate-to-source capacitance causes error in output voltage. Differential connection cancels out error. Applications in systems where very low voltages sampled or many integrate-and -hold cycles before circuit is reset.
Various experimental studies of elastohydrodynamic lubrication have been reviewed. The various types of machines used in these investigations, such as the disc, two and four ball, crossed-cylinders, and crossed-axes rolling disc machine, are described. The measurement of the most important parameters, such as film shape, film thickness, pressure, temperature, and traction, is considered. Determination of the film thickness is generally the most important of these effects since it dictates the extent to which the asperities on opposing surfaces can come into contact and thus has a direct bearing on wear and fatigue failure of the contacting surfaces. Several different techniques for measuring film thickness have been described, including electrical resistance, capacitance, X-ray, optical interferometry, laser beam diffraction, strain gage, and spring dynamometer methods. An attempt has been made to describe the basic concepts and limitations of each of these techniques. These various methods have been used by individual researchers, but there is no universally acceptable technique for measuring elastohydrodynamic film thickness. Capacitance methods have provided most of the reliable data for nominal line or rectangular conjunctions, but optical interferometry has proved to be the most effective procedure for elliptical contacts. Optical interferometry has the great advantage that it reveals not only the film thickness, but also details of the film shape over the complete area of the conjunction.
The foamed glasses that are being considered for structural support in solar thermal energy system silvered glass concentrator mirrors are assessed for strength-limiting defects by a nondestructive technique which measures the capacitance of well defined regions. The feasibility of locating large defects is demonstrated for the case of one type of cellular mass. Observed capacitance variations are believed to be due to small voids or other irregularities in the material. If the defects are equal to or greater than approximately 20 times the glass matrix pore size, they can be resolved with sufficient accuracy to delineate their spatial extent.
The two techniques which have provided most of the information on interface states in MIS-C (metal-insulator-semiconductor-capacitor) structures are the 'quasi-static method' and the 'conductance method'. Sher et al. (1979) and Su et al. (1980) have suggested a number of improvements concerning these methods. The present investigation has the objective to extend the earlier results and to offer a new tentative interpretation of the data. A critical review is conducted of the data collection and reduction techniques for the quasi-static method, taking into account the sample, the quasi-static capacitance, and the surface potential. In connection with a discussion of the conductance method, attention is given to parallel conductance and capacitance measurements, interface-state densities, time constants, and measurements on a (110) surface orientation.
A parametric analysis was performed of transmission cables for transmitting electrical power at high voltage (up to 1000 V) and high frequency (10 to 30 kHz) for high power (100 kW or more) space missions. Large diameter (5 to 30 mm) hollow conductors were considered in closely spaced coaxial configurations and in parallel lines. Formulas were derived to calculate inductance and resistance for these conductors. Curves of cable conductance, mass, inductance, capacitance, resistance, power loss, and temperature were plotted for various conductor diameters, conductor thickness, and alternating current frequencies. An example 5 mm diameter coaxial cable with 0.5 mm conductor thickness was calculated to transmit 100 kW at 1000 Vac, 50 m with a power loss of 1900 W, an inductance of 1.45 micron and a capacitance of 0.07 micron-F. The computer programs written for this analysis are listed in the appendix.
Metal-carbon-metal structures were fabricated using either gold or aluminum evaporated electrodes and RF plasma (methane) deposited 'diamondlike' carbon films. Alternating-current conductance and capacitance versus voltage and frequency (10 Hz to 13 MHz) data were taken to determine the dielectric properties of these films. Conductance versus frequency data fit a generalized power law, consistent with both dc and hopping conduction components. The capacitance versus frequency data are well matched to the conductance versus frequency data, as predicted by a Kramers-Kronig analysis. The dielectric loss tangent is nearly constant at 0.5 to 1.0 percent over the frequency range from 1 to 100 kHz. The dc resistivity is above 10 to the 13th ohm cm, and the dc breakdown strength is above 8 x 10 to the 6th V/cm is properly prepared samples.
The potential distribution in a plasma containing dust grains were derived where the Debye length can be larger or smaller than the average intergrain spacing. Three models were treated for the grain-plasma system, with the assumption that the system of dust and plasma is charge-neutral: a permeable grain model, an impermeable grain model, and a capacitor model that does not require the nearest neighbor approximation of the other two models. A gauge-invariant form of Poisson's equation was used which is linearized about the average potential in the system. The charging currents to a grain are functions of the difference between the grain potential and this average potential. Expressions were obtained for the equilibrium potential of the grain and for the gauge-invariant capacitance between the grain and the plasma. The charge on a grain is determined by the product of this capacitance and the grain-plasma potential difference.
Design considerations, fabrication techniques, and performance predictions are presented for a planar whiskerless Schottky diode to be used (in radio astronomy applications) at 100-300 GHz. The anode and ohmic contacts are on the same side of the device, and proton bombardment is used to establish the divided surface (by making some regions of the GaAs wafer semiinsulating) prior to definition of a B-doped SiO2 finger, ohmic contacting, anode formation, and anode contact metallization (all using photolithographic techniques). The contributions of parasitic elements are calculated for a device with a 3.5-micron-deep n(+) layer doped at 2 x 10 to the 18th/cu cm, a 250-nm-thick epitaxial layer doped at 5 x 10 to the 16th/cu cm, and a 1-micron-radius anode (providing zero-bias junction capacitance 7 fE). It is predicted that such a device would have total series resistance 12.58 ohm and total shunt capacitance 1.37 fF, compared with 14.27 ohm and 0.93 fF for the corresponding whiskered device.
An examination was made into various techniques to be used to measure static strain in gas turbine liners at temperatures up to 1150 K (1600 F). The methods evaluated included thin film and wire resistive devices, optical fibers, surface acoustic waves, the laser speckle technique with a heterodyne readout, optical surface image and reflective approaches and capacitive devices. A preliminary experimental program to develop a thin film capacitive device was dropped because calculations showed that it would be too sensitive to thermal gradients. In a final evaluation program, the laser speckle technique appeared to work well up to 1150 K when it was used through a relatively stagnant air path. The surface guided acoustic wave approach appeared to be interesting but to require too much development effort for the funds available. Efforts to develop a FeCrAl resistive strain gage system were only partially successful and this part of the effort was finally reduced to a characterization study of the properties of the 25 micron diameter FeCrAl (Kanthal A-1) wire. It was concluded that this particular alloy was not suitable for use as the resistive element in a strain gage above about 1000 K.
Report provides approximate equations for capacitances and ratios of maximum electrostatic field strengths to potentials of variously shaped electrodes in vicinity of ground planes. Maximum-field-strength/potential ratio of given electrode used in conjunction with measured or estimated potential to determine whether discharge is likely. Capacitance and potential give measure of maximum energy release and maximum damage done by discharge.
Circuit proposed to recover energy usually lost in charging and discharging internal gate capacitance of field-effect transistor during high-frequency switching. Scheme includes pulse-forming circuit generating rectangular waveform with zero-level notches near beginning and end of "on" period. Inductor resonates internal gate capacitance so energy recovered during notches.
Significant advances in SIS receiver technology since the last Asilomar meeting include: superconductor materials, integrated inductive tuning elements, and planar mounting structures. The effect of these advances is to push the upper frequency operating limit from about 600 to 1500 GHz, and to enhance the feasibility of focal plane arrays of heterodyne receivers. A fundamental high frequency operating limit of SIS mixers is set by the superconducting energy gap. A practical limitation for high frequency operation of SIS junctions is their parasitic capacitance and resistance. The performance of the mixer will be degraded by the Resistor-Capacitor rolloff. Several designs were reported for inductive elements integrated on the same substrate as the SIS junctions to tune out the bulk junction capacitance. Most millimeter SIS-based heterodyne receivers have used waveguide coupling structures. Technology has advanced to the state where programs that have a high probability of success can be defined to produce arrays of SIS receivers for frequencies as high as 1500 GHz.
Advanced measurement methods using microelectronic test chips are described. These chips are intended to be used in acquiring the data needed to qualify Application Specific Integrated Circuits (ASIC's) for space use. Efforts were focused on developing the technology for obtaining custom IC's from CMOS/bulk silicon foundries. A series of test chips were developed: a parametric test strip, a fault chip, a set of reliability chips, and the CRRES (Combined Release and Radiation Effects Satellite) chip, a test circuit for monitoring space radiation effects. The technical accomplishments of the effort include: (1) development of a fault chip that contains a set of test structures used to evaluate the density of various process-induced defects; (2) development of new test structures and testing techniques for measuring gate-oxide capacitance, gate-overlap capacitance, and propagation delay; (3) development of a set of reliability chips that are used to evaluate failure mechanisms in CMOS/bulk: interconnect and contact electromigration and time-dependent dielectric breakdown; (4) development of MOSFET parameter extraction procedures for evaluating subthreshold characteristics; (5) evaluation of test chips and test strips on the second CRRES wafer run; (6) two dedicated fabrication runs for the CRRES chip flight parts; and (7) publication of two papers: one on the split-cross bridge resistor and another on asymmetrical SRAM (static random access memory) cells for single-event upset analysis.
Resting plasma volumes, and arterial and central venous pressures (CVP) were measured in 16 men before and after exercise training to determine if training-induced hypervolemia could be explained by a change in total vascular capacitance. In addition, resting levels of plasma vasopressin (AVP), atrial natriuretic peptide (ANP), aldosterone (ALD), and norepinephrine (NE) were measured before and after training. The same measurements of vacular volume, pressures, and plasma hormones were measured in 8 subjects who did not undergo exercise and acted as controls. The exercise training program consisted of 10 weeks of controlled cycle exercise for 30 min/d, 4 d/wk at 75 to 80 percent of maximal oxygen uptake (VO2max). A training effect was verified by a 20 percent increase in VO2max, a resting bradycardia, and a 370 ml (9 percent) increase in blood volume. Mean arterial blood pressure was unaltered by exercise training, but resting CVP increased. The percent change in blood volume from before to after training was linearly related to the percent change in CVP. As a consequence of elevations in both blood volume and CVP, the volume-to-pressure ratio was essentially unchanged following exercise training. Plasma AVP, ANP, ALD, and NE were unaltered. Results indicate that elevated CVP is a consequence of training-induced hypervolemia without alteration in total effective venous capacitance. This may represent a resetting of the pressure-volume stimulus-response relation for regulation of blood volume.
A timing sampler consisting of 14 four-stage inverter-pair chains with different load capacitances was fabricated in 1.6-micron n-well CMOS and irradiated with cobalt-60 at 10 rad(Si)/s. For this CMOS process the measured results indicate that the rising delay increases by about 2.2 ns/Mrad(Si) and the falling delay increase is very small, i.e., less than 300 ps/Mrad(Si). The amount of radiation-induced delay depends on the size of the load capacitance. The maximum value observed for this effect was 5.65 ns/pF-Mrad(Si). Using a sensitivity analysis, the sensitivity of the rising delay to radiation can be explained by a simple timing model and the radiation sensitivity of dc MOSFET parameters. This same approach could not explain the insensitivity of the falling delay to radiation. This may be due to a failure of the timing model and/or trapping effects.
The exchange current, transfer coefficient, mass-transport parameters, and electrode capacitance at the Na(g)/porous Mo/Na-Beta-double prime alumina solid electrolyte (BASE) phase boundary have been evaluated from 740 to 1220 K. The transfer coefficient exhibits a value close to 0.5 and the exchange current is dominated by collision frequency, with no significant activation energy. Since the porous Mp-electrode adopts a fairly regular microstructure on the BASE surface, the magnitude of the exchange current of mature electrodes directly depends on the actual contact zone of the porous metal film with the BASE ceramic, and decreases slightly as grain growth occurs. The exchange currents and the mass-transport parameters derived for very porous, thin Mo electrodes indicate that the charge-transfer reaction occurs at a small fraction of the interface. High-frequency limiting capacitance and resistance values due to the interface show potential dependence and a value on the order of 1 F/sq m and 0.1-1.0 Ohm-sq cm.
Results are reported from an extensive investigation into pattern-sensitive soft errors (read disturb errors) in the TCC244 CMOS static RAM chip. The TCC244, also known as the SA2838, is a radiation-hard single-event-upset-resistant 4 x 256 memory chip. This device is being used by the Jet Propulsion Laboratory in the Galileo and Magellan spacecraft, which will have encounters with Jupiter and Venus, respectively. Two aspects of the part's design are shown to result in the occurrence of read disturb errors: the transparence of the signal path from the address pins to the array of cells, and the large resistance in the Vdd and Vss lines of the cells in the center of the array. Probe measurements taken during a read disturb failure illustrate how address skews and the data pattern in the chip combine to produce a bit flip. A capacitive charge pump formed by the individual cell capacitances and the resistance in the supply lines pumps down both the internal cell voltage and the local supply voltage until a bit flip occurs.