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Preliminary results of this study show that, based on selection of magnetic solute and nonmagnetic solvent from periodic table, alloys having Seebeck coefficients approaching 100 micron V/K can be obtained.
The application of contacts and coatings after lithium diffusion provides good electrical output and satisfactory contact adhesion by sintering for short times at temperatures less than the lithium diffusion temperature. High output and repeatability are obtainable from both oxygen-rich and oxygen-lean silicon. These fabrication sequence alterations have led to higher cell output, better appearance, and increased contact strength.
Introduction of lithium by ion implantation eliminates reproducibility and surface problem deficiencies of other introduction techniques. Implantation has been demonstrated to make possible a degree of control over the cell lithium content which has not previously been available. Front barrier development remains to be completed. Successful development of the barrier will make available the freedom to select optimum lithium concentration throughout the cell, including in the vicinity of the junction.
Evidence has been presented that a lithium-diffused crucible-grown silicon solar cell can be made with better efficiency than the flight-quality n p 10 ohms-cm solar cell. When this lithium cell is exposed to a continuous radiation evironment at 60 C (electron spectrum from gamma rays) it has a higher power output than the N/P cell after a fluence equivalent to 1 MeV. A comparison of annealing of proton- and electron-damage in this lithium cell reveals a decidedly faster rate of recovery and higher level of recoverable power from the proton effects. Therefore, the lithium cell shows a good potential for many space missions where the proton flux is a significant fraction of the radiation field to be encountered.
Solar cell experiments show that a single lithium density parameter, the lithium density gradient, calculated from nondestructive capacitance measurements, provides the basis for accurate predictions of lithium cell behavior in a 1-MeV electron environment for fluences ranging between 3 X 10 to the 13th power e/sq cm and 3 X 10 to the 15th power/e sq cm. The oxygen-rich (quartz crucible) lithium cell with phosphorous starting dopant and lithium gradient between approximately 5 X 10 to the 18th power and 1.5 x 10 to the 19th power/cm to the 4th power was found superior in performance to the commercial 10 ohm-cm n/p control cells. Post-recovery stability of oxygen-rich cells was satisfactory. An average post-recovery current drop of approximately 1 mA was observed for 70 crucible cells after 1 year-equivalent storage time at 80 C. In contrast the oxygen-poor (float zone and Lopex) lithium cells displayed spotty initial performance and stability problems at room temperature.
The results of an experimental evaluation of the real-time degradation characteristics of lithium-diffused silicon solar cells are reported. A strontium-90 radioisotope was used for simulation of a typical earth-orbital electron environment. The experiment was performed in an ion pump vacuum chamber with samples maintained at -50, +20, +50, and +80 C. Samples were illuminated during the 6-month exposure run with solar cell 1-5 characteristics measured periodically in situ. This 6-month exposure corresponded to a 1 MeV equivalent fluence of approximately 10 to the 14th power electrons/sq cm. Several types of lithium cells were irradiatied and compared directly with conventional N/P cells. The best lithium cells compared favorably with N/P cells, particularly at the higher test temperatures. With a slight improvement of initial performance characteristics, lithium cells appear feasible for 5 to 10 year missions at synchronous altitude. Based on the reported results and those of other irradiation experiments, lithium cells would appear to be superior to N/P cells in proton-dominated earth-orbital environments. Another important conclusion of the effort was that illuminated/loaded cells degrade more rapidly than do dark/unloaded cells. The irradiation experiment provided data of high quality with a high degree of confidence because of the experimental and statistical analysis techniques utilized.
Scaling up the BCl3 without O2 diffusion beyond 30 to 40 cells was investigated by using a 100 cell capacity diffusion boat which held the cells vertically. Sheet resistances and I-V curves were uniform with 10 to 20 cells spaced along the entire boat, so the quantity was increased to 40 and then 60 cells per diffusion. There was no change in cell output and uniformity going from 20 to 40 cells per diffusion; however only half the lithium cells fabricated from slices diffused in the 60 cell diffusion had efficiencies of 11% or better. Although uniform sheet resistances and I-V characteristic curves were obtained with up to 60 cells in the BCl3 with O2 diffusion, the short circuit currents were approximately 15% lower than the anticipated 135 to 140 mA. Consequently, work on this diffusion process has been aimed solely at increasing the short circuit current. The diffusion temperature was lowered from 1055 to 1000 and 950 C, and at each of these temperatures variations in diffusion time were investigated. At 1000 C short circuit currents were approximately 10 mA higher, 130 rather than 120 mA average.
Investigation of the effects of lithium on radiation-produced complexes having long-time stability by examining the localized energy levels in the forbidden gap which give rise to extrinsic photoconductivity. The levels are found to disappear and in some cases shift with annealing in the 100-450 C temperature range. Due to the complexity of the system and the present lack of adequate theory, no complete analysis of the data obtained could be made.
Discussion of two new techniques used to measure the lattice damage produced in GaAs by the implantation of 60 keV cadmium ions. In the first method, optical reflection spectra of the ion-implanted samples were measured in the wavelength range from 2000 to 4600 A. The decrease in reflectivity resulting from ion-implantation was used to determine the relative amount of lattice damage as a function of ion dose. The second technique employed the scanning electron microscope. Patterns very similar in appearance to Kikuchi electron diffraction patterns are obtained when the secondary and/or backscattered electron intensity is displayed as a function of the angle of incidence of the electron beam on a single crystal surface. The results of measurements made by both methods are compared with each other and with data obtained by the method of measuring lattice damage by Rutherford scattering of 1 MeV helium ions.
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Very large diffusion coefficients were encountered and required the determination of impurity profiles for samples approximately 1 cm thick. Since conductivity values are readily converted into concentrations of electrically active impurities, the major problem became that of accurately determining the conductivity profiles of beryllium diffused silicon samples. Four-point probe measurements on samples having depth conductivities are interpreted in terms of conductivity profiles, based on an exact solution of the problem of exponentially depth dependent conductivity. Applications include surface conductivity determination where the form of the conductivity profile is known, and conductivity profile determination from probe measurements taken as the sample surface is progressively lapped away. The application is limited to samples having conductivity monotonically decreasing with depth from the probed surface.
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Certain anions OH(-), F(-) and Gl(-) are shown to enhance grain growth in MgO. The magnitude of their effect decreases in the order in which the anions are listed and depends on their location (solid-solution, second phase) in the MgO lattice. As most anions exhibit relatively high vapor pressures at sintering temperatures, they retard densification and invariably promote residual porosity. The role of anions on grain growth rates was studied in relation to their effect on pore mobility and pore removal; the atomic process controlling the actual rates was determined from observed kinetics in conjunction with the microstructural features. With respect to controlling mechanisms, the effects of all anions are not the same. OH(-) and F(-) control behavior through creation of a defect structure and a grain boundary liquid phase while Cl(-) promotes matter transport within pores by evaporation-condensation. Studies on an additional anion, S to the minus 2nd power gave results which were no different from undoped MgO, possibly because of evaporative losses during hot pressing. Hence, the effect of sulphur is negligible or undetermined.
It is shown that zinc in gallium nitride forms an efficient radiative center emitting blue light at 2.86 plus or minus 0.02 eV and acts as a deep acceptor that can render the crystal insulating. A systematic variation of growth conditions indicates that an optimization of the photoluminescence efficiency is possible. Under nonoptimal conditions lower photon energy emission is obtained.
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