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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Secure and Privacy Aware Data Sharing Approach for Smart Electric Vehicles

The integration of smart electric vehicles (SEVs) into smart cities marks a significant step toward creating efficient, sustainable, and connected urban spaces. However, secure and private data sharing is a major challenge as SEVs connect with smart city systems. The interaction between SEVs and consumer electronic devices (CEDs) raises serious concerns about data security and privacy. Here, to address these challenges, this article presents how blockchain technology and federated learning (FL) can address these issues. The proposed approach provides a secure and privacy-aware framework for data exchange between SEVs and CEDs in smart cities. The experiment results demonstrate the effectiveness of the proposed framework for secure data sharing and maintaining system reliability in smart city environments. It also enables trust and promotes the widespread adoption of interconnected urban technologies.

Das, Debashis [Meharry Medical College, Nashville,↗
DOE OSTI2024

Searching for Grid-Forming Technologies That Do Not Impact Protection Systems: A promising technology

The design of legacy-line protection elements has been guided by the behavior of synchronous machines during faults. Because of the significant field-winding inductance and rotating mass, the magnitude, angular frequency, and phase angle of the back-electromotive force (EMF) voltage waveforms of synchronous machines remain practically constant for several hundreds of milliseconds after a fault occurs. Furthermore this has facilitated the engineering of the memory-polarization technique in mho distance elements, which has been effective for machine-dominant power grids. However, this assumption is no longer held for inverter-based resources (IBRs) because of the lack of field winding and moment of inertia in power electronics devices. Notably, the negative-sequence directional overcurrent protection and the quadrilateral distance elements have been impacted by early IBRs with grid-following (GFL) controls because they did not inject negative-sequence currents during asymmetrical faults.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Passivity-Based Control of Grid Forming and Grid Following Converters in Microgrids

With the integration of more and more power electronics devices into the grid, it is not easy to guarantee the stability of the whole system due to the complexity of the control structure of various power converters. In this paper, we consider grid-forming and grid-following converters in one microgrid, in which the grid-forming converters support the voltage and frequency of the microgrid and the grid-following converters inject their maximum power into the microgrid. To handle the stability issue, the passivity principle is applied to guarantee the stability of the whole microgrid. We ensure every grid-following converter satisfies the passivity via the port-controlled Hamiltonian method. In addition, we apply the passivity-based proportional-resonant controller to the grid-forming converter. One of the advantages of the proposed method is that the phase lock loop system is eliminated, which may cause stability issues. Simulation results show that the proposed method can control the microgrid effectively.

Gui, Yonghao (Young)↗
DOE OSTI2026

SDN-Based Smart Cyber Switching (SCS) for Cyber Restoration of a Digital Substation

In recent years, critical infrastructure and power grids have increasingly been targets of cyber-attacks, causing widespread and extended blackouts. Digital substations are particularly vulnerable to such cyber incursions, jeopardizing grid stability. This paper addresses these risks by proposing a cybersecurity framework that leverages software-defined networking (SDN) to bolster the resilience of substations based on the IEC- 61850 standard. The research introduces a strategy involving smart cyber switching (SCS) for mitigation and concurrent intelligent electronic device (CIED) for restoration, ensuring ongoing operational integrity and cybersecurity within a substation. The SCS framework improves the physical network’s behavior (i.e., leveraging commercial SDN capabilities) by incorporating an adaptive port controller (APC) module for dynamic port management and an intrusion detection system (IDS) to detect and counteract malicious IEC-61850-based sampled value (SV) and generic object-oriented system event (GOOSE) messages within the substation’s communication network. The framework’s effectiveness is validated through comprehensive simulations and a hardware-in-the-loop (HIL) testbed, demonstrating its ability to sustain substation operations during cyber-attacks and significantly improve the overall resilience of the power grid.

Liu, Chen-Ching (ORCID:0000000289417958)↗
DOE OSTI2021

Varistors: A Useful Tool for Superconducting Magnet Quench Protection

A perfect varistor is a constant voltage resistor as a function of current through the resistor. A perfect varistor can't exist, because its resistance would be infinite at zero current. In electronic devices, varistors are often used as surge protectors. A varistor can be used in place of an ordinary resistor as the discharge resistance across superconducting coil sections. When used this way, the integral of I 2 dt during the discharge can be reduced by almost one third. When a varistor is used for quench protection of coils that are coupled to shorted secondary circuits the integral of I 2 dt can be reduced much more. Furthermore, this can be a key factor when coil current densities and stored energies are high as in many potential HTS magnet systems. This paper discusses the types of varistors that are commercially available and their characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

High-Temperature RF Transmission Loss Characteristics of Platinum–Inconel 600 and Platinum–304 Steel Interconnects

Radio frequency (RF) transmission losses that occur at electronic interconnects is currently an important limitation of wireless sensors and other electronic device packages that must operate in high-temperature environments. Herein, in-situ RF transmission losses were measured for two types of interconnects: platinum (Pt) wire bonded to an Inconel 600 coaxial cable; and Pt-wire bonded to a block of 304 steel. Heating the Pt wire/Inconel interconnects at 800 °C for up to 200 hours were found to be very stable with no measurable transmission losses. In contrast, Pt wire/304 steel block interconnects examined over similar test periods at 800 °C exhibited gradual increases in transmission losses leveling off at 10, 38 and 85 mdB at 400 MHz, 700 MHz, and 1 GHz, respectively. Increasing the test temperature to 900 °C caused further elevated transmission losses of 30, 70 and 108 mdB at the same reported frequencies. By comparison, temperature cycling of the Pt wire/304 steel interconnects between room temperature and 900 °C was found to cause more significant degradation. In particular, four thermal cycles from room temperature to 900 °C resulted in losses of 75, 271, and 482 mdB at the same reported frequencies. Parabolic oxidation relative to the RF skin depth in the 304 steel block at the tested frequencies are discussed as possible reasons for the transmission losses during the isothermal soaks, whereas interconnect degradation due to differences in thermal expansion between Pt and 304 steel are primarily responsible for transmission losses caused by high temperature cycling.

304 steel↗
DOE OSTI2020

Data-Driven Day-Ahead PV Estimation Using Autoencoder-LSTM and Persistence Model

Inherent variability in photovoltaic (PV) and associated impacts on power systems is a challenging problem for both the PV owners and the grid operators. Existing statistical and machine learning algorithms typically work well for weather conditions similar to historical data. Furthermore, uncertain weather conditions pose a great challenge to the estimation accuracy of the estimation models. With the enhanced integration of intelligent electronic devices and the realization of associated automation in the power grid, renewable energy data is becoming more accessible, which can be utilized by deep learning models and improve the PV power generation estimation accuracy. In this paper, a hybrid deep learning model driven by external weather data is proposed to do day-ahead PV output forecasting at 15-minute-interval. The proposed model is motivated by the recent advancement of Long-Short-Term-Memory (LSTM) networks and AutoEncoder (AE), which estimates uncertainties in sequence while making the prediction for complex weather conditions. Meanwhile, the persistence model (PM) is used to predict continuous sunny weather conditions. The forecasting result is validated with data from multiple locations

42 ENGINEERING↗
DOE OSTI2020

Investigation of Various Transformer Topologies for HF Isolation Applications

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Mitigation of Boiling-Induced Thermal Degradation Using Microporous Nickel Inverse Opals Structures

Engineered microporous structures have received much attention in high-heat-flux electronics cooling due to their high thermal conductivity and permeability, and large surface area for heat transfer, but are susceptible to boiling-induced thermal degradation. Here, this study investigates the efficacy of nickel inverse opals (NiIOs) in mitigating structural degradation caused by corrosion-assisted erosion during pool boiling with water as the working fluid. First, we compared the reliability of NiIOs to copper inverse opals (CuIOs) for a 3-day pool boiling test at constant heat flux. The NiIOs demonstrated superior resistance to thermal degradation due to their inherent corrosion resistance and mechanical strength. Subsequently, we conducted a more controlled experiment to show the effect of heat flux on the degradation of the NiIOs while excluding the effect of temperature variations. Pool boiling tests of 20-μm-thickness NiIOs covering an area of ∼11 × 11 mm 2 with a 2.5 × 2.5 mm 2 heater at the center were conducted at heat flux levels of 20%, 40%, and 60% of the critical heat flux (CHF) for 3 days. The NiIOs subjected to heat flux levels of 20% and 40% CHF showed minimal degradation, while the sample subjected to 60% CHF showed erosion on the top surface due to higher bubble formation and departure rate. These results show the potential of NiIOs as a promising solution for long-term thermal management in high-power electronic devices, although design considerations for maximum allowable heat flux are necessary for reliable operation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Advanced modeling of field enhanced thermionic emission

Shaped emitters are of interest to a broad range of applications in vacuum electronic devices. In particular, thermionic energy converters (TECs) take advantage of shaped emitters to increase the local surface field, thereby extracting more current for a given cathode temperature and applied voltage. However, modeling these devices is challenging; Warp [J.-L. Vay, D. P. Grote, R. H. Cohen, and A. Friedman, Comput. Sci. Discov. 5, 014019 (2012)] is a fully 3D particle-in-cell code capable of handling a wide range of physics problems and is well suited to modeling TECs. Additionally, recent improvements to Warp have enabled the accurate modeling of emitters with arbitrary curved surfaces. Specifically, the inclusion of subgrid resolution for computing the electrostatic potential and the ability to apply mesh refinement for specific areas of interest allow for a more accurate solution to the fields on these surfaces. These improvements coupled with Warp’s ability to handle variable particle weights make it an ideal candidate for simulating these complex devices. In this paper, the authors study the applicability of different subgrid configurations for simulating shaped emission surfaces and field convergence for different mesh-refinement techniques. They then implement a custom weighting algorithm that allows for uniform sampling of emission surfaces with a large variation in the surface electric field. They then use this algorithm to study emission for curved emitters in both the field-enhancement regime and the space-charge regime.

Edelen, Jonathan P. (ORCID:0000000215180652)↗
DOE OSTI2021

Self-assembled vertically aligned nanocomposite systems integrated on silicon substrate: Progress and future perspectives

Silicon (Si) integration is a critical step for implementing functional oxides into Si-based electronic devices, considering the advantages of low-cost and scalability of Si substrates. In the past decade, self-assembled vertically aligned nanocomposites (VANs) have attracted enormous research interest owing to their unique multifunctionalities and highly tunable physical properties as well as their one-step self-assembly process. Most of the VAN thin films have been reported to grow epitaxially on single crystalline oxide substrates, however, with limited systems reported on Si substrates due to the very large lattice mismatch between oxides and Si lattices. In this review, the current progress for self-assembled VAN systems integrated on a Si substrate is summarized. Buffer layered enabled VAN growth has been proven to be an effective approach for improving the epitaxial quality of oxide-oxide and oxide-metal VAN systems, while direct growth is preferred in nitride-metal VAN systems. Furthermore, the material versatility enables the Si-integrated VAN thin films to exhibit distinct physical properties such as ferromagnetism, ferroelectricity, magnetoresistance, as well as unique optical properties. The review also summarizes the various parameters for tuning the growth morphologies and corresponding properties for the VAN systems, including phase molar ratio, deposition frequency, buffer layers, background pressure, etc. Finally, future perspectives are discussed including new VAN system exploration, physical properties tuning, as well as design and fabrication of Si-based nanoelectronics and nanophotonic devices applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Synthesis and electrical behavior of VO 2 thin films grown on SrRuO 3 electrode layers

VO 2 thin films were grown on conducting oxide underlayer SrRuO 3 buffered SrTiO 3 (111) and Si/SiO 2 substrates, respectively, using sputtering. X-ray diffraction phi-scans revealed the epitaxial nature of the VO 2 films grown on SrRuO 3 buffered SrTiO 3 and polycrystalline structure for films grown on SrRuO 3 buffered Si/SiO 2 . X-ray photoelectron spectroscopy confirms a dominant presence of V 4+ in both films and establishes a high-quality growth of single-phase VO 2 films. Temperature and electric-field driven metal-insulator-transition in both the in-plane and out-of-plane configurations were investigated. Depending on the configuration, the resistance change across the metal-insulator-transition varies from a factor of 1.57–3. The measured resistance in each state as well as the magnitude of resistance change were similar during temperature and electric-field driven metal-insulator-transition. To shed light on the suppressed metal-insulator-transition characteristics due to the current shunting effect from conducting SrRuO 3 bottom electrode, a distributed resistance network model is proposed and benchmarked against reports from the literature. Here, the results demonstrate the growth of high-quality VO 2 on conducting SrRuO 3 layers and their electrical behavior, which is of particular interest for all-oxide electronic devices utilizing phase transitions such as resistive memory and neuromorphic oscillators.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Solid-phase heteroepitaxy of oriented Sb 2 Se 3 on GaAs for birefringent thin films

Here, we investigate the amorphous-to-crystalline transformation of antimony selenide (Sb 2 Se 3 ) on UHV-prepared GaAs (001) substrates. In the bulk orthorhombic form, Sb 2 Se 3 is a layered quasi-1D semiconductor with highly anisotropic properties of interest for optical and electronic devices. We find that an amorphous layer deposited by molecular beam epitaxy annealed at or above 230 °C yields a textured-epitaxial structure among some randomly oriented domains. The textured-epitaxial Sb 2 Se 3 grains are oriented with the covalently bonded “1D axis” constrained in-plane to GaAs [110] and with multiple van der Waals (hk0) orientations out-of-plane. The same texture was achieved exclusively without randomly oriented grains using continuous-wave laser radiation, highlighting the use of thermal and optical methods to yield anisotropic crystalline Sb 2 Se 3 films directly from the amorphous phase. Polarized reflectance and polarized microscopy confirm the unique state of in-plane birefringence in the crystallized thin film. Overall, we show that solid-phase heteroepitaxy provides additional pathways to the integration of low-symmetry chalcogenide semiconductors for demanding applications where the inherent anisotropy needs to be preserved.

Xiao, Kelly [Stanford Univ., CA (United States)] (↗
DOE OSTI2020

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗
DOE OSTI2020

Competing magnetic phases and fluctuation-driven scalar spin chirality in the kagome metal YMn 6 Sn 6

Identification, understanding, and manipulation of novel magnetic textures are essential for the discovery of new quantum materials for future spin-based electronic devices. In particular, materials that manifest a large response to external stimuli such as a magnetic field are subject to intense investigation. Here, we study the kagome-net magnet YMn 6 Sn 6 by magnetometry, transport, and neutron diffraction measurements combined with first-principles calculations. We identify a number of nontrivial magnetic phases, explain their microscopic nature, and demonstrate that one of them hosts a large topological Hall effect (THE). We propose a previously unidentified fluctuation-driven mechanism, which leads to the THE at elevated temperatures. This interesting physics comes from parametrically frustrated interplanar exchange interactions that trigger strong magnetic fluctuations. Our results pave a path to chiral spin textures, promising for novel spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Real-space observation of fluctuating antiferromagnetic domains

Magnetic domains play a fundamental role in physics of magnetism and its technological applications. Dynamics of antiferromagnetic domains is poorly understood, although antiferromagnets are expected to be extensively used in future electronic devices wherein it determines the stability and operational speed. Dynamics of antiferromagnets also features prominently in the studies of topological quantum matter. Real-space imaging of fluctuating antiferromagnetic domains is therefore highly desired but has never been demonstrated. We use coherent x-ray diffraction to obtain videos of fluctuating micrometer-scale antiferromagnetic domains in Ni 2 MnTeO 6 on time scales from 10 -1 to 10 3 s. In the collinear phase, thermally activated domain wall motion is observed in the vicinity of the Néel temperature. Unexpectedly, the fluctuations persist through the full range of the higher-temperature helical phase. These observations illustrate the high potential significance of the dynamic domain imaging in phase transition studies and in magnetic device research.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Highly enhanced ferroelectricity in HfO 2 -based ferroelectric thin film by light ion bombardment

Continuous advancement in nonvolatile and morphotropic beyond-Moore electronic devices requires integration of ferroelectric and semiconductor materials. The emergence of hafnium oxide (HfO 2 )–based ferroelectrics that are compatible with atomic-layer deposition has opened interesting and promising avenues of research. However, the origins of ferroelectricity and pathways to controlling it in HfO 2 are still mysterious. We demonstrate that local helium (He) implantation can activate ferroelectricity in these materials. Additionally, the possible competing mechanisms, including He ion–induced molar volume changes, vacancy redistribution, vacancy generation, and activation of vacancy mobility, are analyzed. These findings both reveal the origins of ferroelectricity in this system and open pathways for nanoengineered binary ferroelectrics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Characterization of Cycle-Aged Commercial NMC and NCA Lithium-ion Cells: I. Temperature-Dependent Degradation

Lithium-ion batteries are widely used in applications from consumer electronic devices to stationary energy storage. Appropriate management of batteries is challenging due to limited data on their performance and materials degradation. Previous studies have focused on characterization of single cells under specific operating conditions. In the present work, commercial 18650 lithium-ion cells with LiNi x Mn y Co 1-x-y O 2 (NMC) and LiNi x Co y Al 1-x-y O 2 (NCA) positive electrodes were characterized by a wide range of electrochemical and materials techniques after cycling at 15, 25, or 35 °C to ∼80% capacity. The NCA cells exhibit weak temperature dependence in their cycle aging and materials degradation. The NMC cells exhibited increased capacity fade and materials degradation as ambient temperature decreased. All cells exhibited loss of lithium inventory as their primary degradation mode. However, the NCA cells only showed evidence of solid electrolyte interphase (SEI) growth whereas the NMC cells showed signs of Li plating at 15 °C, transitioning to SEI growth at 35 °C. The NMC cells displayed signs of loss of active material at the positive electrode at lower temperatures, suggesting that Li plating is correlated to additional processes that increase the rate of degradation. These results highlight the importance of avoiding broad generalizations about Li-ion battery temperature dependence.

25 ENERGY STORAGE↗