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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 451 records · Page 25
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

An overview of photovoltaics for space applications

Significant progress in both silicon and GaAs technology for photovoltaic applications has been made. As a result 50 micron silicon cells, incorporating all the recent processing advancements, have been produced which deliver over 19 mW/sq cm initial power. These cells also display impressive performance after exposure to 1 MeV electrons, delivering 15 mW/sq cm after a fluence of 1 x 10 to the 15th e/sq cm. GaAlAs cells are now being made which have conversion efficiencies and radiation resistance superior to the best silicon solar cells. A discussion of the work that led to this situation, as well as an attempt to project further progress in both silicon and GaAs technology is given.

Scott-Monck, J.↗
NASA NTRS1979

Proton-induced coloring of multicomponent glasses

The paper describes the coloring induced by 85-MeV protons in three Schott glasses representative of glass types used as focusing elements in the International Ultraviolet Explorer Fine Error Sensor. It is shown that the absorption (i.e., coloring) induced in each glass by the radiation can be resolved into three optical absorption bands in the near UV-visible range. It is also discussed how that absorption grows with increasing dosages of protons, thus providing the means to predict degradation in any of the three glasses for a particular fluence of proton radiation.

Bartusiak, M. F.↗
NASA NTRS1979

Experimental setup for decomposition of UF6

The rate at which UF6 decomposes into UF5 and UF4 was determined as a function of neutron fluence. To study UF6 decomposition rate, an absorption cell for VUV and the associated VUV spectroscopy system was used to measure UF6 while under irradiation. The cell contains 50 torr of UF6 at room temperature to insure that the UF6 is in a gaseous state. It is shown that by determining the absorption coefficient below 2100A for UF6, above 2100A for F2, and at 4100A for cell degradation, UF6 decomposition can be measured at a neutron flux of 10 to the 12th power/sq cm for 72 continuous hours.

Rowe, M.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Development of space-qualified GaAs solar cells

Cells 2 cm x 2 cm were produced having an efficiency of 16% at 100 C and 12% at 200 C. They were superior to silicon cells under 1 MeV electron bombardment up to fluences in excess of 10 to the 15th power electron per sq cm, and to protons with an energy in excess of 1 MeV. The possibility of producing cells in quantity using a graphite wafer holder is mentioned.

Knechtli, R. C.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

The geostationary radiation environment

A study of the geostationary radiation environment is presented. The distribution of charged particles is reviewed in terms of population domains, where trapped constituents (energetic electrons and protons) and transients (solar flare protons) have been considered. Synchronous geomagnetic geometry is discussed, and temporal and spatial variations of trapped particles are briefly reviewed. A short description of the current standard environment models is given. Probabilistic solar flare proton predictions are described, including the distinction between ordinary event and anomalously large event fluences and the probability of occurrence of anomalously large events. A special solar proton evaluation approach is suggested for extended manned missions in the synchronous altitude regime. Finally, calculational results are presented for orbital flux integrations and dose and shielding evaluations. The data, given in graphic and tabular form, are explained and discussed.

Stassinopoulos, E. G.↗
NASA NTRS1979

Designer's guide to radiation effects on materials for use on Jupiter fly-bys and orbiters

This paper summarizes the state-of-the-art of the complex field of radiation effects on spacecraft materials. It is intended as a guide for designers of systems exposed to damaging electrons and protons. The emphasis is on the relative damage levels for the more common materials that may be used. Information on the preliminary flux and fluence levels of the yet to be designed Jupiter orbiter, Galileo, is also presented.

Bouquet, F. L.↗
NASA NTRS1980

Radiation damage in high voltage silicon solar cells

Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.

Weinberg, I.↗
NASA NTRS1980

Effects of thermal annealing on the deep-level defects and I-V characteristics of 200 keV proton irradiated AlGaAs-GaAs solar cells

Detailed characterization of deep-level defects and analysis of dark I-V data in 200 keV proton irradiated AlGaAs-GaAs solar cells have been carried out for several proton fluences (5 x 10 to the 11th, 10 to the 12th, and 10 to the 13th P/sq cm), using DLTS, C-V, and I-V measurement techniques. To study the effect of low temperature thermal annealing on the deep-level defect properties, these irradiated samples were annealed in vacuum at 300 C for one hour. Comparison was then made on the measured defect parameters (i.e., defect energy levels and densities) and the dark I-V characteristics for both the annealed and unannealed samples.

Li, S. S.↗
NASA NTRS1980

Modeling of radiation damage in silicon solar cells

One MeV electron irradiation produces preponderantly isolated vacancy interstitial pairs. If neither of these defects is mobile, the concentration of each grows linearly with fluence. Annealing of damage depends on the nature of the damage. Vacancy interstitial pairs which are bound by an interaction such that they mutually annihilate rather than dissociate are termed close pairs; close pair recovery usually occurs at a lower temperature than the temperature at which long distance defect migration occurs. Annealing of the remaining frozen in damage occurs when a temperature is reached where the vacancy or interstitial is mobile; usually the interstitial is more mobile than the vacancy. The recovery occurs in two regimes which may be resoluable.

Oehrlein, G.↗
NASA NTRS1980

Radiation damage in silicon NIP solar cells

The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.

Weinberg, I.↗
NASA NTRS1980

Three year performance of the NTS-2 solar cell experiment

Twelve different solar cell modules from the NTS 2 experiment are functioning after more than three years in a severe trapped radiation orbit of 20,367 km (10,990 nm) circular, 63 deg inclination. The rate of maximum power degradation may be fit to a predicted rate which is based on twice the value of 1 MeV electron equivalent damage fluence calculated from the space electron model AEI 7. The photovoltaic parameters of the cells are compared to their original values to demonstrate rank order of performance.

Statler, R. L.↗
NASA NTRS1980

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗
NASA NTRS1981

Proton-induced noise in digicons

The Space Telescope, which carries four Digicons, will pass several times per day through a low-altitude portion of the radiation belt called the South Atlantic Anomaly. This is expected to create interference in what is otherwise anticipated to be a noise-free device. Two essential components of the Digicon, the semiconductor diode array and the UV transmitting window, generate noise when subjected to medium-energy proton radiation, a primary component of the belt. These trapped protons, having energies ranging from 2 to 400 Mev and fluences at the Digicon up to 4,000 P+/sec-sq cm, pass through both the window and the diode array, depositing energy in each. In order to evaluate the effect of these protons, engineering test models of Digicon tubes to be flown on the High Resolution Spectrograph were irradiated with low-flux monoenergetic proton beams at the University of Maryland cyclotron. Electron-hole pairs produced by the protons passing through the diodes or the surrounding bulk caused a background count rate. This is the result of holes diffusing over a distance of many diode spacings, causing counts to be triggered simultaneously in the output circuits of several adjacent diodes. Pulse-height spectra of these proton-induced counts indicate that most of the bulk-related counts overlap the single photoelectron peak. A geometrical model will be presented of the charge collection characteristics of the diode array that accounts for most of the observed effects.

Smith, L. C.↗
NASA NTRS1980

Proton-induced degradation of VUV transmission of LiF and MgF2

Proton-induced degradation of vacuum ultraviolet (VUV) transmittance of LiF and MgF2 was measured for 85- and 600-MeV protons for a fluence up to 2.8 x 10 to the 13th p/sq cm. Transmittances were measured from 105 to 210 nm. When the irradiation level for a given material is expressed in terms of absorbed energy per unit of volume of crystal, 85- and 600-MeV protons produce the same degradation. MgF2 is substantially more radiation resistant than LiF in the VUV. Irradiation of LiF with 1.8 x 10 to the 13th p/sq cm at 85 MeV changed the transmittance of the hydrogen Ly-alpha line at 121.6 nm from 55 to 23%. The corresponding change for MgF2 was from 52 to 42% for 2.8 x 10 to the 13th p/sq cm.

Reft, C. S.↗
NASA NTRS1980

Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

Goradia, C.↗