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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Ultra-high-precision detection of single microwave photons based on a hybrid system between a Majorana zero mode and a quantum dot
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Remarkable Prospect for Quantum-Dot-Coupled Tin Qubits in Silicon
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Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si
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Carrier Recombination Properties of Low-Threshold 1.3 μm Quantum Dot Lasers on Silicon
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Superradiant emission from self-assembled light emitters: From molecules to quantum dots
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Option 1: Qubits in Gate-Defined Silicon Quantum Dots UW/Delft/Harvard/SNL Collaboration [Slides]
Abstract not provided.
Measurement of the out-of-plane g-factor in strained Ge/SiGe using single-hole quantum dots.
Abstract not provided.
Quantum-dot-coupled Sn qubits in silicon: DFT analysis of coherent electronic shuttling.
Abstract not provided.
Scanning tunneling microscopy-informed simulation of valley physics in single and double quantum dots.
Abstract not provided.
Quantum Dots on Silicon-on-Insulator (QD/SOI): Nanoscale Strain and Band Structure Engineering (Final Report)
As the project titles indicate, the work focused on Group IV nanomembranes (NMs), thin functional layers, and interfaces, all with one or more dimensions at the nanoscale. The primary focus was discovery driven fundamental science. This approach led to surprising new, unexpected results that ended up being patentable and creating commercial value, but that were also high-impact science. Our effort divided into several overlapping thrusts: 1) strain engineering of NMs, via both lattice strain and externally applied strain, 2) interfaces between crystalline semiconductor NMs and other 2D sheets that are stacked or grown on each other, and 3) charge transport (electronics and optoelectronics) in thin layers, sheets, and surfaces. We accomplish these goals via 1) fabrication of new or higher-quality materials using NM approaches, 2) growth of new combinations, or 3) transfer and stacking to create new composites. The range of materials included combinations of Si, Ge, graphene, and several III-V compounds. The work has foundations in both nano- and mesoscale science.
Double Shells! Pbs/CdS/Cu 2-x S Core/Shell/Shell Quantum dots [Slides]
Abstract not provided.
InP-based quantum-dot/-dash lasers emitting in the O-band.
Abstract not provided.
Modeling few-hole quantum dots in Ge/SiGe: 𝒈-factors and qubit properties
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Feasibility of Quantum Dot Superradiance
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Coherent electron spin shuttling in an industrially-manufactured Si/SiGe triple quantum dot device
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