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Random-access memory (RAM) devices of proposed type exploit magneto-optical properties of magnetic garnets exhibiting perpendicular anisotropy. Magnetic writing and optical readout used. Provides nonvolatile storage and resists damage by ionizing radiation. Because of basic architecture and pinout requirements, most likely useful as small-capacity memory devices.
A communication device and modulation capability were developed for the transmission of digital data or voices from point to point. This device is a fast-switching phase coherent frequency synthesizer. When this synthesizer is appropriately incorporated in a communication system it can provide interference resistance, multiple-user capability, user identification, ranging, navigation, Doppler correction, and digitized communication (voice and data). The application of this device to aircraft/airport complex and law enforcement communications is discussed.
Silicon oscillators have lately emerged to serve as potential replacement for crystal and ceramic resonators to provide timing and clock signals in electronic systems. These semiconductor-based devices, including those that are based on MEMS technology, are reported to be resistant to vibration and shock (an important criteria for systems to be deployed in space), immune to EMI, consume very low current, require few or no external components, and cover a wide range of frequency for analog and digital circuits. In this work, the performance of five recently-developed COTS silicon oscillator chips from different manufacturers was determined within a temperature range that extended beyond the individual specified range of operation. In addition, restart capability at extreme temperatures, i.e. power switched on while the device was soaking at extreme (hot or cold) temperature, and the effects of thermal cycling under a wide temperature range on the operation of these silicon oscillators were also investigated. Performance characterization of each oscillator was obtained in terms of its output frequency, duty cycle, rise and fall times, and supply current at specific test temperatures. The five different oscillators tested operated beyond their specified temperature region, with some displaying excellent stability throughout the whole test temperature range. Others experienced some instability at certain temperature test points as evidenced by fluctuation in the output frequency. Recovery from temperature-induced changes took place when excessive temperatures were removed. It should also be pointed out that all oscillators were able to restart at the extreme test temperatures and to withstand the limited thermal cycling without undergoing any significant changes in their characteristics. In addition, no physical damage was observed in the packaging material of any of these silicon oscillators due to extreme temperature exposure and thermal cycling. It is recommended that additional and more comprehensive testing under long term cycling be carried out to fully establish the reliability of these devices and to determine their suitability for use in space exploration missions under extreme temperature conditions.
Single junction indium gallium arsenide (InGaAs) based TPV devices have demonstrated efficiencies in excess of 20% at radiator temperatures of 1058 C. Modeling suggests that efficiency improvements in single bandgap devices should continue although they will eventually plateau. One approach for extending efficiencies beyond the single bandgap limit is to follow the technique taken in the solar cell field, namely tandem TPV cells. Tandem photovoltaic devices are traditionally composed of cells of decreasing bandgap, connected electrically and optically in series. The incident light impinges upon the highest bandgap first. This device acts as a sieve, absorbing the high-energy photons, while allowing the remainder to pass through to the underlying cell(s), and so on. Tandem devices reduce the energy lost to overexcitation as well as reducing the current density (Jsc). Reduced Jsc results in lower resistive losses and enables the use of thinner and lower doped lateral current conducting layers as well as a higher pitch grid design. Fabricating TPV tandem devices utilizing InGaAs for all of the component cells in a two cell tandem necessitates the inclusion of a buffer layer in-between the high bandgap device (In0.53 Ga0.47As - 0.74eV) and the low bandgap device (In0.66Ga0.34As - 0.63eV) to accommodate the approximately 1% lattice strain generated due to the change in InGaAs composition. To incorporate only a single buffer layer structure, we have investigated the use of the indium phosphide (InP) substrate as a superstrate. Thus the high-bandgap, lattice- matched device is deposited first, followed by the buffer structure and the low-bandgap cell. The near perfect transparency of the high bandgap (1.35eV) iron-doped InP permits the device to be oriented such that the light enters through the substrate. In this paper we examine the impact of the buffer layer on the underlying lattice-matched InGaAs device. 0.74eV InGaAs devices were produced in a variety of configurations both with and without buffer layers. All structures were characterized by reciprocal space x-ray diffraction to determine epilayer composition and residual strain. Electrical characterization of the devices was performed to examine the effect of the buffer on the device performance. The effect of the buffer structure depends upon where it is positioned. When near the emitter region, a 2.6x increase in dark current was measured, whereas no change in dark current was observed when it was near the base region.
Single event upset phenomena are discussed, taking into account cosmic ray induced errors in IIL microprocessors and logic devices, single event upsets in NMOS microprocessors, a prediction model for bipolar RAMs in a high energy ion/proton environment, the search for neutron-induced hard errors in VLSI structures, soft errors due to protons in the radiation belt, and the use of an ion microbeam to study single event upsets in microcircuits. Basic mechanisms in materials and devices are examined, giving attention to gamma induced noise in CCD's, the annealing of MOS capacitors, an analysis of photobleaching techniques for the radiation hardening of fiber optic data links, a hardened field insulator, the simulation of radiation damage in solids, and the manufacturing of radiation resistant optical fibers. Energy deposition and dosimetry is considered along with SGEMP/IEMP, radiation effects in devices, space radiation effects and spacecraft charging, EMP/SREMP, and aspects of fabrication, testing, and hardness assurance.
The back-to-back barrier-N-N+ (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220 GHz tripler using integrated planar bbBNN devices is presented.
During extended periods of skeletal unloading, losses in strength and density of the proximal femur will occur. In long-duration spaceflight, resistive exercise is used to replace the normal loads exerted on the spine and hip. At the present time, there is no conclusive evidence that hip bone loss has been prevented in this scenario. Our group has recently developed and clinically evaluated a multifunctional exercise system, the Combined Countermeasure Device (CCD). The CCD comprises a low-footprint Stuart Platform for lower-body resistance exercise and balance training, and a cardiovascular exercise bicycle. A consideration for resistance exercise was targeting of the hip abductor and adductor muscles, which attach directly at the hip and which should subject it to the largest loads. In our training study, we found that CCD exercise increased hip adductor and abductor strength, and modeling results suggest that this exercise exerts forces on the hip of approx. 4-6 body weights at 1g, compared to forces of approx.2.5 body weight y squatting exercise. In our current study, we hypothesize that abductor and adductor exercise will increase the density and strength of the proximal femur.
Resonant tunneling through double-barrier heterostructures has attracted increasing interest recently, largely because of the fast charge transport it provides. In addition, the negative differential resistance regions that exist in the current-voltage (I-V) curve (peak-to-valley ratios of 3.5:1 at room temperature, and nearly 10:1 at 77 K, were measured) suggest that high-speed devices based on the character of the I-V curve should be possible. For example, the negative differential resistance region is capable of providing the gain necessary for high-frequency oscillations. In the laboratory attempts were made to increase the frequency and power of these oscillators and to demonstrate several different high-frequency devices.
The development of nano-arrays for sensors and devices requires the growth of arrays with the proper characteristics. One such application is the growth of vertically aligned carbon nanotubes (CNTs) and graphitic carbon fibers (GCFs) for the chemical attachment of probe molecules. The effectiveness of such an array is dependent not only upon the effectiveness of the probe and the interface between that probe and the array, but also the array and the underlaying substrate. If that array is a growth of vertically aligned CNTs or GCFs then the attachment of that array to the surface is of the utmost importance. This attachment provides the mechanical stability and durability of the array, as well as, the electrical properties of that array. If the detection is to be acquired through an electrical measurement, then the appropriate resistance between the array and the surface need to be fabricated into the device. I will present data on CNTs and GCFs grown from both thermal and plasma enhanced chemical vapor deposition. The focus will be on the characteristics of the metal film from which the CNTs and GCFs are grown and the changes that occur due to changes within the growth process.
The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.
The performance of experimental two phase, charge-coupled shift registers constructed using polysilicon gates overlapped by aluminum gates was studied. Shift registers with 64, 128, and 500 stages were built and operated. Devices were operated at the maximum clock frequency of 20 MHz. Loss per transfer of less than .0001 was demonstrated for fat zero operation. The effect upon transfer efficiency of various structural and materials parameters was investigated including substrate orientation, resistivity, and conductivity type; channel width and channel length; and method of channel confinement. Operation of the devices with and without fat zero was studied as well as operation in the complete charge transfer mode and the bias charge, or bucket brigade mode.
Rachet device transfers loads imposed on latch to support structure before latch springs resist loads, positively locks two pivoted structures on contact, and carries loads in all directions.
Research on metal-barrier-metal structures is reviewed. Topics discussed include: demonstration of antenna coupling and rectification characteristics with high resistance evaporated structures at a wavelength of 10 microns; application of these devices to coherent conversion of laser radiation and infrared and optical circuit elements; and comparison of the point-contact type of diode structure and the newly developed photolithographic structures.
The determination of the firing cycle in a horizontal tube furnace for MoO3: Sn ink composition applied by silk screening process on P or N structured solar cells is presented. In comparison with the strip heater used to determine the reaction mechanism, the reduction of MoO3 in the tube furnace progresses at a much faster rate and the Sn:Mo alloy forms at a much lower temperature. The device characteristics determined by the V-I curve showed a high resistance (approx. 10 Ohms) at peak temperatures between 600 C and 800 C. The high series resistance is attributed to the lack of formation of MoSi2 within the used temperature range.
The space telescope contains various scientific instrument (SI) modules which are mounted to the Focal Plane Structure (FPS) in a statically determinate manner. This is accomplished by using three registration fittings per SI module, one resisting three translations, another resisting two and the third resisting only one. Due to thermal insulating requirements these fittings are complex devices composed of numerous pieces. The structural integrity of these fittings is of great importance to the safety of the orbiter transporting the telescope, so in addition to the stress analyses performed during the design of these components, fracture susceptibility also needs to be considered. The pieces of the registration fittings for the Radial SI Module containing the Wide Field Planetary Camera are examined to determine which would endanger the orbiter if they fractured and what is the likelihood of their fracture. The latter is stated in terms of maximum allowable initial flaw sizes in these pieces.
The General Purpose Automation Controller is a multi-processor architecture for automation programming. A methodology has been developed whose aim is to simplify the task of programming distributed real-time systems for users in research or manufacturing. Programs are built by configuring function blocks (low-level computations) into processes using data flow principles. These processes are activated through the verb mechanism. Verbs are divided into two classes: those which support devices, such as robot joint servos, and those which perform actions on devices, such as motion control. This programming methodology was developed in order to achieve the following goals: (1) specifications for real-time programs which are to a high degree independent of hardware considerations such as processor, bus, and interconnect technology; (2) a component approach to software, so that software required to support new devices and technologies can be integrated by reconfiguring existing building blocks; (3) resistance to error and ease of debugging; and (4) a powerful command language interface.
An investigation is made into the possibility of providing low resistance contacts to shallow junction InP solar cells which do not require sintering and which do not cause device degradation even when subjected to extended annealing at elevated temperatures. We show that the addition of In to Au contacts in amounts that exceed the solid solubility limit lowers the as-fabricated (unsintered) contact resistivity (R sub c) to the 10(exp -5) ohm cm(exp 2) range. We next consider the contact system Au/Au2P3, which has been shown to exhibit as-fabricated R sub c values in the 10(exp -6) ohm cm(exp 2) range, but which fails quickly when heated. We show that the substitution of a refractory metal (W, Ta) for Au preserves the low R sub c values while preventing the destructive reactions that would normally take place in this system at high temperatures. We show, finally, that R sub c values in the 10(exp -7) ohm cm(exp 2) range can be achieved without sintering by combining the effects of In or Ga additions to Au contacts with the effects of introducing a thin Au2P3 layer at the metal-InP interface.
The high T(sub c) superconducting ceramic materials, developed in 1987, are now being extensively investigated for a variety of engineering applications. These applications include such devices as conducting links, rotating and linear bearings, sensors, filters, switches, high Q cavities, magnets, and motors. Some of these devices take advantage of the material's ability to lose all electrical resistance at a critical temperature, T(sub c), while others make use of the repulsion forces generated between the magnetic field of a permanent magnet and a superconductor which is cooled below its T(sub c), Meissner effect. This report describes the work accomplished to date by: (1) reviewing the present state of the art in actuator technology, (2) evaluating processing and fabrication of high strain electrostrictive materials, and (3) testing these electrostrictive materials.