Mechanisms of ionizing radiation surface effects on transistors.
Ionizing radiation effects on silicon planar bipolar transistors to determine degradation mechanisms
IONIZING RADIATION↗
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Strengthening of oxidation resistant materials for gas turbine applications
Silicon nitride and silicon carbide ceramics were treated to form compressive surface layers. On the silicon carbide, quenching and thermal exposure treatments were used, and on the silicon nitride, quenching, carburizing, and a combination of quenching and carburizing were used. In some cases substantial improvements in impact resistance and/or flexural strength were observed. The presence of compressive surface stresses was demonstrated by slotted rod tests.
Kirchner, H. P.↗
Submicron Silicon MOSFET
Process for making metal-oxide/semiconductor field-effect transistors (MOSFET's) results in gate-channel lengths of only few hundred angstroms about 100 times as small as state-of-the-art devices. Gates must be shortened to develop faster MOSFET's; proposed fabrication process used to study effects of size reduction in MOS devices and eventually to build practical threedimensional structures.
Daud, T.↗
Verilog-A Device Models for Cryogenic Temperature Operation of Bulk Silicon CMOS Devices
Verilog-A based cryogenic bulk CMOS (complementary metal oxide semiconductor) compact models are built for state-of-the-art silicon CMOS processes. These models accurately predict device operation at cryogenic temperatures down to 4 K. The models are compatible with commercial circuit simulators. The models extend the standard BSIM4 [Berkeley Short-channel IGFET (insulated-gate field-effect transistor ) Model] type compact models by re-parameterizing existing equations, as well as adding new equations that capture the physics of device operation at cryogenic temperatures. These models will allow circuit designers to create optimized, reliable, and robust circuits operating at cryogenic temperatures.
Akturk, Akin↗
Preliminary Investigation of the Effect of Surface Treatment on the Strength of a Titanium Carbide - 30 Percent Nickel Base Cermet
Specimens of a nickel-bonded titanium carbide cermet were given the following surface treatments: (1) grinding, (2) lapping, (3) blast cleaning, (4) acid roughening, (5) oxidizing, and (6) oxidizing and refinishing. Room-temperature modulus-of-rupture and impact strength varied with the different surface treatments. Considerable strength losses resulted from the following treatments: (1) oxidation at 1600 F for 100 hours, (2) acid roughening, and (3) severe grinding with 60-grit silicon carbide abrasive. The strength loss after oxidation was partially recovered by grit blasting or diamond grinding.
MATERIALS, PROPERTIES - FLEXURE↗
Phase III of groove etch studies, oxide barrier isolation Final report, 1 Feb. - 1 Jun. 1965
Oxide barrier isolated regions of silicon single crystals in silicon dioxide matrix by epitaxial deposition and chemical etching for integrated circuit device
EPITAXIAL DEPOSITION↗
High temperature resistant composites from bismaleimide resin.
It is shown that bismaleimide/woven fiberglass composites molded at moderate pressures (100 psi) yield void-free laminates of good integrity. The strength of the laminates at room temperature compares favorably with epoxy/glass laminates; at 260 C, the laminates are far superior in oxidative aging to epoxy and silicon laminates. The synthesis, processing, and fabrication of a bismaleide polymer are discussed.
Gilwee, W. J.↗
Oxidation stability of advanced reaction-bonded Si3N4 materials
Four slip-cast, injection-molded and isostatically-pressed specimens of reaction-bonded silicon nitride (RBSN) were subjected to static oxidation tests at 900 C for 10 hours. Specimens containing 8-10% interconnected open porosity of size greater than one micron exhibited a 20-30% decrease in average room temperature four-point flexure strength, while those with 10% open porosity of magnitudes much smaller than one micron as well as those with 2-4% interconnected open porosity of about one micron did not decrease in strength after 900 C exposure. It was determined that preoxidation treatment at 1350 C prevents the 20-30% strength degradation due to internal oxidation, and evidence is presented which suggests that surface pit formation in some RBSN may result from contamination by the furnace environment rather than any intrinsic material properties.
Lindberg, L. J.↗
Development of plane strain fracture toughness test for ceramics using Chevron notched specimens
Chevron-notched four-point-bend and short-bar specimens have been used to determine the fracture toughness of sintered aluminum oxide and hot-pressed silicon nitride ceramics. The fracture toughness for Si3N4 is found to be essentially independent of the specimen size and chevron notch configuration, with values ranging from 4.6 to 4.9 MNm exp -3/2. In contrast, significant specimen size and notch geometry effects have been observed for Al2O3, with the fracture toughness ranging from 3.1 to 4.7 MNm exp -3/2. These effects are attributed to a rising crack growth resistance curve for the Al2O3 tested.
Bubsey, R. T.↗
A comparison of VLSI architecture of finite field multipliers using dual, normal or standard basis
Three different finite field multipliers are presented: (1) a dual basis multiplier due to Berlekamp; (2) a Massy-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features which apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for very large scale integration implementations can readily be ascertained.
Hsu, I. S.↗
A comparison of VLSI architecture of finite field multipliers using dual, normal, or standard bases
Three different finite-field multipliers are presented: (1) a dual-basis multiplier due to Berlekamp; the Massey-Omura normal basis multiplier; and (3) the Scott-Tavares-Peppard standard basis multiplier. These algorithms are chosen because each has its own distinct features that apply most suitably in different areas. Finally, they are implemented on silicon chips with nitride metal oxide semiconductor technology so that the multiplier most desirable for VLSI implementation can readily be ascertained.
Hsu, I. S.↗
Neural network based feed-forward high density associative memory
A novel thin film approach to neural-network-based high-density associative memory is described. The information is stored locally in a memory matrix of passive, nonvolatile, binary connection elements with a potential to achieve a storage density of 10 to the 9th bits/sq cm. Microswitches based on memory switching in thin film hydrogenated amorphous silicon, and alternatively in manganese oxide, have been used as programmable read-only memory elements. Low-energy switching has been ascertained in both these materials. Fabrication and testing of memory matrix is described. High-speed associative recall approaching 10 to the 7th bits/sec and high storage capacity in such a connection matrix memory system is also described.
Daud, T.↗
Relative sliding durability of candidate high temperature fiber seal materials
The relative sliding durability behavior of six candidate ceramic fibers for high temperature sliding seal applications is reviewed and compared. Pin on disk tests were used to evaluate potential seal materials by sliding a tow or bundle of the candidate ceramic fiber against a superalloy test disk. Tests were conducted in air under a 2.65 N load, at a sliding velocity of 0.025 m/sec and at temperatures from 25 to 900 C. Friction was measured during the tests and fiber wear, indicated by the extent of fibers broken in the tow or bundle, was measured at the end of each test. For most of the fibers, friction and wear increase with test temperature. The relative fiber durability ranking correlates with tensile strength, indicating that tensile data, which is more readily available than sliding durability data, may be useful in predicting fiber wear behavior under various conditions. A dimensional analysis of the wear data shows that the fiber durability is related to a dimensionless durability ratio which represents the ratio of the fiber strength to the fiber stresses imposed by sliding. The analysis is applicable to fibers with similar diameters and elastic moduli. Based upon the results of the research program, three fiber candidates are recommended for further study as potential seal materials. They are a silicon based complex carbide-oxide fiber, an alumina-boria-silica and an aluminosilicate fiber.
Dellacorte, Christopher↗
The abundant elements in interstellar dust
We explore the incorporation of the cosmically abundant species O, C, N, Mg, Si, Fe, and S into interstellar dust. Column densities based on Goddard High Resolution Spectrograph 3.5 km/s resolution measurements from the literature for eight individual absorbing regions toward five lines of sight are used. Corrections are applied as needed in order to account for recent improvements in oscillator strengths. In order to acquire the most accurate column densities, and check on the accuracy of the oscillator strengths, we compare column densities based on the very strong Lorentzian damped lines of C II, O I, N I, and Mg II with results for the weak lines of these species, and confirm the previously determined f-values for O I lambda 1335, C II lambda 2325, and N I lambda lambda 1159, 1160. New empirical f-values of 1.25 x 10(exp -3) and 6.25 x 10(exp -4), respectively, are derived for the Mg II weak doublet at 1239 and 1240 A. Assuming a cosmic reference abundance based on solar and B star values, we derive depletions and dust-phase abundances which suggest that more than 70% of the available Mg and Fe is incorporated into dust-grain cores, whereas only 35% of the silicon is. This implies that oxides are important constituents of the grain core population. Mg and Fe atoms are mantled onto grain cores in a ratio of 1.8 to 1, whereas approximately 4.0 Si atoms are in the mantle per Fe atom. Since Si is not expected to accrete onto silicate or graphite grains, other grain cores, perhaps oxides and/or metallic Fe, may provide mantling sites for this species. The abundances of Fe and Mg in mantles would imply that graphite grains must have a substantial coating unless oxides provide significant mantling sites for these species. The abundance of O and N in the dust phase as implied by the solar reference abundance values are difficult to reconcile with the fact that these elements are not expected to participate in mantle formation, and the 3.1 micrometer H2O ice feature is not seen in absorption toward stars similar to those studied. The B star reference abundances for O and N, however, imply that no mantling of these species has occurred. The dust-phase abundance for C implied by solar reference abundances agrees with predictions for the number of graphite grains needed to produce the 2175 A bump. B star reference abundances, however, suggest that the abundance of C in the dust phase is not always sufficient to produce the bump.
Sofia, Ulysses J.↗
Environment Conscious, Biomorphic Ceramics from Pine and Jelutong Wood Precursors
Environment conscious, biomorphic ceramics have been fabricated from pine and jelutong wood precursors. A carbonaceous preform is produced through wood pyrolysis and subsequent infiltration with oxides (ZrO2 sols) and liquid silicon to form ceramics. These biomorphic ceramics show a wide variety of microstructures, densities, and hardness behavior that are determined by the type of wood and infiltrants selected.
Singh, Mrityunjay↗
Low-Power SOI CMOS Transceiver
The work aims at developing a low-power Silicon on Insulator Complementary Metal Oxide Semiconductor (SOI CMOS) Transceiver for deep-space communications. RF Receiver must accomplish the following tasks: (a) Select the desired radio channel and reject other radio signals, (b) Amplify the desired radio signal and translate them back to baseband, and (c) Detect and decode the information with Low BER. In order to minimize cost and achieve high level of integration, receiver architecture should use least number of external filters and passive components. It should also consume least amount of power to minimize battery cost, size, and weight. One of the most stringent requirements for deep-space communication is the low-power operation. Our study identified that two candidate architectures listed in the following meet these requirements: (1) Low-IF receiver, (2) Sub-sampling receiver. The low-IF receiver uses minimum number of external components. Compared to Zero-IF (Direct conversion) architecture, it has less severe offset and flicker noise problems. The Sub-sampling receiver amplifies the RF signal and samples it using track-and-hold Subsampling mixer. These architectures provide low-power solution for the short- range communications missions on Mars. Accomplishments to date include: (1) System-level design and simulation of a Double-Differential PSK receiver, (2) Implementation of Honeywell SOI CMOS process design kit (PDK) in Cadence design tools, (3) Design of test circuits to investigate relationships between layout techniques, geometry, and low-frequency noise in SOI CMOS, (4) Model development and verification of on-chip spiral inductors in SOI CMOS process, (5) Design/implementation of low-power low-noise amplifier (LNA) and mixer for low-IF receiver, and (6) Design/implementation of high-gain LNA for sub-sampling receiver. Our initial results show that substantial improvement in power consumption is achieved using SOI CMOS as compared to standard CMOS process. Potential advantages of SOI CMOS for deep-space communication electronics include: (1) Radiation hardness, (2) Low-power operation, and (3) System-on-Chip (SOC) solutions.
Fujikawa, Gene↗
Structure of Thin-Film Lithium Microbatteries
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiC(0)O2, on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof. The batteries produced by the above process are disclosed.
Jay F Whitacre↗
Method for Manufacturing Thin-film Lithium Microbatteries
A process for making thin-film batteries including the steps of cleaning a glass or silicon substrate having an amorphous oxide layer several microns thick; defining with a mask the layer shape when depositing cobalt as an adhesion layer and platinum as a current collector; using the same mask as the preceding step to sputter a layer of LiCoO2 on the structure while rocking it back and forth; heating the substrate to 300 C. for 30 minutes; sputtering with a new mask that defines the necessary electrolyte area; evaporating lithium metal anodes using an appropriate shadow mask; and, packaging the cell in a dry-room environment by applying a continuous bead of epoxy around the active cell areas and resting a glass slide over the top thereof.
Jay F Whitacre↗